TI LM567CM/NOPB

LM567, LM567C
www.ti.com
SNOSBQ4D – MAY 1999 – REVISED MARCH 2013
LM567/LM567C Tone Decoder
Check for Samples: LM567, LM567C
FEATURES
APPLICATIONS
•
•
•
•
•
•
•
•
1
2
•
•
•
•
•
•
20 to 1 Frequency Range with an External
Resistor
Logic Compatible Output with 100 mA Current
Sinking Capability
Bandwidth Adjustable from 0 to 14%
High Rejection of Out of Band Signals and
Noise
Immunity to False Signals
Highly Stable Center Frequency
Center Frequency Adjustable from 0.01 Hz to
500 kHz
Touch Tone Decoding
Precision Oscillator
Frequency Monitoring and Control
Wide Band FSK Demodulation
Ultrasonic Controls
Carrier Current Remote Controls
Communications Paging Decoders
DESCRIPTION
The LM567 and LM567C are general purpose tone
decoders designed to provide a saturated transistor
switch to ground when an input signal is present
within the passband. The circuit consists of an I and
Q detector driven by a voltage controlled oscillator
which determines the center frequency of the
decoder. External components are used to
independently set center frequency, bandwidth and
output delay.
CONNECTION DIAGRAM
Figure 1. Metal Can Package
Top View
See Package Number LMC0008C
OBSOLETE
Figure 2. PDIP and SOIC Packages
Top View
See Package Number D0008A
See Package Number P0008E
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 1999–2013, Texas Instruments Incorporated
LM567, LM567C
SNOSBQ4D – MAY 1999 – REVISED MARCH 2013
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ABSOLUTE MAXIMUM RATINGS (1) (2) (3)
Supply Voltage Pin
Power Dissipation
9V
(4)
1100 mW
V8
15V
V3
−10V
V3
V4 + 0.5V
−65°C to +150°C
Storage Temperature Range
Operating Temperature Range
−55°C to +125°C
LM567H
LM567CH, LM567CM, LM567CN
0°C to +70°C
Soldering Information
PDIP Package
Soldering (10 sec.)
260°C
SOIC Package
Vapor Phase (60 sec.)
215°C
Infrared (15 sec.)
220°C
See http://www.ti.com for other methods of soldering surface mount devices.
(1)
(2)
(3)
(4)
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is functional, but do not ensure specific performance limits. Electrical Characteristics state DC and AC electrical
specifications under particular test conditions which ensure specific performance limits. This assumes that the device is within the
Operating Ratings. Specifications are not ensured for parameters where no limit is given, however, the typical value is a good indication
of device performance.
If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
Refer to RETS567X drawing for specifications of military LM567H version.
The maximum junction temperature of the LM567 and LM567C is 150°C. For operating at elevated temperatures, devices in the TO-5
package must be derated based on a thermal resistance of 150°C/W, junction to ambient or 45°C/W, junction to case. For the DIP the
device must be derated based on a thermal resistance of 110°C/W, junction to ambient. For the SOIC package, the device must be
derated based on a thermal resistance of 160°C/W, junction to ambient.
ELECTRICAL CHARACTERISTICS
AC Test Circuit, TA = 25°C, V+ = 5V
Parameters
Conditions
Power Supply Voltage Range
Power Supply Current Quiescent
RL = 20k
Power Supply Current Activated
RL = 20k
Input Resistance
LM567
IL = 100 mA, fi = fo
Largest No Output Input Voltage
IC = 100 mA, fi = fo
Max
Min
Typ
Max
4.75
5.0
9.0
4.75
5.0
9.0
V
6
8
7
10
mA
11
13
12
15
mA
Bn = 140 kHz
Largest Detection Bandwidth
12
Largest Detection Bandwidth Skew
Largest Detection Bandwidth Variation with
Temperature
Largest Detection Bandwidth Variation with
Supply Voltage
Highest Center Frequency
2
20
20
10
Largest Simultaneous Outband Signal to
Inband Signal Ratio
Minimum Input Signal to Wideband Noise
Ratio
Units
Typ
18
Smallest Detectable Input Voltage
LM567C/LM567CM
Min
15
25
15
20
10
25
mVrms
mVrms
6
6
dB
−6
−6
dB
14
16
1
2
±1
100
kΩ
15
10
±0.1
4.75–6.75V
20
500
Submit Documentation Feedback
14
18
% of fo
2
3
% of fo
±0.1
±2
±1
100
500
%/°C
±5
%V
kHz
Copyright © 1999–2013, Texas Instruments Incorporated
Product Folder Links: LM567 LM567C
LM567, LM567C
www.ti.com
SNOSBQ4D – MAY 1999 – REVISED MARCH 2013
ELECTRICAL CHARACTERISTICS (continued)
AC Test Circuit, TA = 25°C, V+ = 5V
Parameters
Center Frequency Stability (4.75–5.75V)
Conditions
0 < TA < 70
−55 < TA < +125
Center Frequency Shift with Supply Voltage 4.75V–6.75V
4.75V–9V
Fastest ON-OFF Cycling Rate
LM567
Min
Typ
LM567C/LM567CM
Max
35 ± 60
35 ± 140
0.5
Min
Typ
35 ± 60
35 ± 140
1.0
2.0
fo/20
0.4
Units
Max
ppm/°C
ppm/°C
2.0
2.0
%/V
%/V
fo/20
Output Leakage Current
V8 = 15V
0.01
25
0.01
25
µA
Output Saturation Voltage
ei = 25 mV, I8 = 30 mA
ei = 25 mV, I8 = 100 mA
0.2
0.6
0.4
1.0
0.2
0.6
0.4
1.0
V
Output Fall Time
30
30
ns
Output Rise Time
150
150
ns
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Copyright © 1999–2013, Texas Instruments Incorporated
Product Folder Links: LM567 LM567C
3
LM567, LM567C
SNOSBQ4D – MAY 1999 – REVISED MARCH 2013
www.ti.com
SCHEMATIC DIAGRAM
4
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Copyright © 1999–2013, Texas Instruments Incorporated
Product Folder Links: LM567 LM567C
LM567, LM567C
www.ti.com
SNOSBQ4D – MAY 1999 – REVISED MARCH 2013
TYPICAL PERFORMANCE CHARACTERISTICS
Typical Frequency Drift
Typical Bandwidth Variation
Figure 3.
Figure 4.
Typical Frequency Drift
Typical Frequency Drift
Figure 5.
Figure 6.
Bandwidth
vs
Input SignalAmplitude
Largest Detection Bandwidth
Figure 7.
Figure 8.
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Copyright © 1999–2013, Texas Instruments Incorporated
Product Folder Links: LM567 LM567C
5
LM567, LM567C
SNOSBQ4D – MAY 1999 – REVISED MARCH 2013
www.ti.com
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
6
Detection Bandwidth as a
Function of C2 and C3
Typical Supply Current
vs
Supply Voltage
Figure 9.
Figure 10.
Greatest Number of Cycles
Before Output
Typical Output Voltage
vs
Temperature
Figure 11.
Figure 12.
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Copyright © 1999–2013, Texas Instruments Incorporated
Product Folder Links: LM567 LM567C
LM567, LM567C
www.ti.com
SNOSBQ4D – MAY 1999 – REVISED MARCH 2013
TYPICAL APPLICATIONS
Component values (typ)
R1 6.8 to 15k
R2 4.7k
R3 20k
C1 0.10 mfd
C2 1.0 mfd 6V
C3 2.2 mfd 6V
C4 250 mfd 6V
Figure 13. Touch-Tone Decoder
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Copyright © 1999–2013, Texas Instruments Incorporated
Product Folder Links: LM567 LM567C
7
LM567, LM567C
SNOSBQ4D – MAY 1999 – REVISED MARCH 2013
www.ti.com
Connect Pin 3 to 2.8V to Invert Output
Figure 14. Oscillator with Quadrature Output
Figure 15. Oscillator with Double Frequency Output
Figure 16. Precision Oscillator Drive 100 mA Loads
8
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Copyright © 1999–2013, Texas Instruments Incorporated
Product Folder Links: LM567 LM567C
LM567, LM567C
www.ti.com
SNOSBQ4D – MAY 1999 – REVISED MARCH 2013
AC TEST CIRCUIT
fi = 100 kHz + 5V
*Note: Adjust for fo = 100 kHz.
APPLICATIONS INFORMATION
The center frequency of the tone decoder is equal to the free running frequency of the VCO. This is given by
The bandwidth of the filter may be found from the approximation
where
•
•
Vi = Input voltage (volts rms), Vi ≤ 200mV
C2 = Capacitance at Pin 2(μF)
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Copyright © 1999–2013, Texas Instruments Incorporated
Product Folder Links: LM567 LM567C
9
LM567, LM567C
SNOSBQ4D – MAY 1999 – REVISED MARCH 2013
www.ti.com
LM567C MDC MWC ToNE DECODER
Figure 17. Die Layout (C - Step)
Table 1. Die/Wafer Characteristics
Fabrication Attributes
General Die Information
Physical Die Identification
LM567C
Bond Pad Opening Size (min)
91µm x 91µm
Die Step
C
Bond Pad Metalization
0.5% COPPER_BAL.
ALUMINUM
Passivation
VOM NITRIDE
Physical Attributes
Wafer Diameter
150mm
Back Side Metal
BARE BACK
Dise Size (Drawn)
1600µm x 1626µm
63.0mils x 64.0mils
Back Side Connection
Floating
Thickness
406µm Nominal
Min Pitch
198µm Nominal
Special Assembly Requirements:
Note: Actual die size is rounded to the nearest micron.
Die Bond Pad Coordinate Locations (C - Step)
(Referenced to die center, coordinates in µm) NC = No Connection, N.U. = Not Used
SIGNAL NAME
PAD# NUMBER
X/Y COORDINATES
PAD SIZE
X
Y
X
OUTPUT FILTER
1
-673
686
91
x
91
LOOP FILTER
2
-673
-419
91
x
91
INPUT
3
-673
-686
91
x
91
V+
4
-356
-686
91
x
91
TIMING RES
5
673
-122
91
x
91
TIMING CAP
6
673
76
91
x
91
GND
7
178
686
117
x
91
OUTPUT
8
-318
679
117
x
104
10
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Y
Copyright © 1999–2013, Texas Instruments Incorporated
Product Folder Links: LM567 LM567C
LM567, LM567C
www.ti.com
SNOSBQ4D – MAY 1999 – REVISED MARCH 2013
REVISION HISTORY
Changes from Revision C (March 2013) to Revision D
•
Page
Changed layout of National Data Sheet to TI format .......................................................................................................... 10
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Copyright © 1999–2013, Texas Instruments Incorporated
Product Folder Links: LM567 LM567C
11
PACKAGE OPTION ADDENDUM
www.ti.com
11-Apr-2013
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
(2)
MSL Peak Temp
Op Temp (°C)
Top-Side Markings
(3)
(4)
LM567CM
ACTIVE
SOIC
D
8
95
TBD
Call TI
Call TI
0 to 70
LM
567CM
LM567CM/NOPB
ACTIVE
SOIC
D
8
95
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
0 to 70
LM
567CM
LM567CMX/NOPB
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
0 to 70
LM
567CM
LM567CN
ACTIVE
PDIP
P
8
40
TBD
Call TI
Call TI
0 to 70
LM
567CN
LM567CN/NOPB
ACTIVE
PDIP
P
8
40
Green (RoHS
& no Sb/Br)
Call TI
Level-1-NA-UNLIM
0 to 70
LM
567CN
NE567V
ACTIVE
PDIP
P
8
40
TBD
Call TI
Call TI
0 to 70
LM
567CN
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a
continuation of the previous line and the two combined represent the entire Top-Side Marking for that device.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
11-Apr-2013
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
26-Mar-2013
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
LM567CMX/NOPB
Package Package Pins
Type Drawing
SOIC
D
8
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
2500
330.0
12.4
Pack Materials-Page 1
6.5
B0
(mm)
K0
(mm)
P1
(mm)
5.4
2.0
8.0
W
Pin1
(mm) Quadrant
12.0
Q1
PACKAGE MATERIALS INFORMATION
www.ti.com
26-Mar-2013
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
LM567CMX/NOPB
SOIC
D
8
2500
367.0
367.0
35.0
Pack Materials-Page 2
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