DAESAN HEP805

CURRENT 8.0 Amperes
VOLTAGE 50 to 600 Volts
HEP801 THRU HEP806
Features
· Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
· Low forward voltage drop
· High current capability
· High reliability
· Low power loss, high effciency
· High surge current capability
· High speed switching
· Low leakage
ITO-220A
10 0.5
6.4 0.1
13Min
0.7 0.2
5.08
· Case : JEDEC ITO-220A molded plastic body
· Terminals : Lead solderable per
MIL-STD-750, method 2026
· Polarity : As marked
· Mounting Position : Any
· Weight : 0.08 ounce, 2.24 gram
15 0.3
2.7 0.2
1.3 0.2
3.7 0.2
Mechanical Data
4.5 0.2
2.7
3.2
PIN 1
+
+
CASE
PIN 2
CasePositive
0.5
2.4
PIN 1
CASE
PIN 2 +
Case Negative
Suffix"R"
Dimensions in inches and (millimeters)
Maximum Ratings And Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive
load. For capacitive load, derate by 20%)
Symbols
HEP
801
HEP
802
HEP
803
HEP
804
HEP
805
HEP
806
Units
Maximum recurrent peak reverse voltage
VRRM
50
100
200
300
400
600
Volts
Maximum RMS voltage
VRMS
35
70
140
210
280
420
Volts
Maximum DC blocking voltage
VDC
50
100
200
300
400
600
Volts
Maximum average forward rectified current
0.375"(9.5mm) lead length @ at TA=100℃
I(AV)
8.0
Amps
Peak forward surge current 8.3ms single
half sine-wave superimposed on rated load
(JEDEC method)
IFSM
125
Amps
Maximum instantaneous forward voltage
at 8.0A
VF
1.0
1.3
Maximum DC reverse current at rated DC
blocking voltage TA=25℃
Maximum DC reverse current at rated DC
blocking voltage TA=125℃
1.7
Volts
10.0
μA
IR
100
Maximum reverse recovery time (Note 1)
Trr
50
Typical junction capacitance (Note 2)
CJ
80
Typical thermal resistance (Note 3)
RθJC
Operating junction and storage
temperature range
TJ
TSTG
Notes:
(1) Test conditions: IF=0.5A, IR=1.0A, Irr=0.25A.
(2) Measured at 1MHz and applied reverse voltage of 4.0 Volts.
(3) Thermal resistance from junction to case mounting on heatsink.
2.2
-55 to +150
-55 to +150
80
ns
50
pF
℃/W
℃
RATINGS AND CHARACTERISTIC CURVES HEP801 THRU HEP806
FIG . 1 -REVERSE RECOVERY TIME CHARACTERISTIC
AND TEST CIRCUIT DIAGRAM
10
50
NONINDUCTIVE
NONINDUCTIVE
DUT
(+ )
50Vdc
(approx)
(-)
+0.5A
PULSE
GENERATOR
( NOTE 2 )
NONINDUCTIVE
OSCILLOSCOPE
(NOTE 2 )
-1.0A
SET TIME BASE FOR
5/ 10ns / cm
.
FIG 2 -MAXIMUM AVERAGE FORWARD CURRENT DERATING
FIG . 3 -TYPICAL REVERSE CHARACTERISTICS
1000
20
12
8
4
150
FIG . 4 -MAXIMUM NON - REPETITIVE FORWARD SURGE
CURRENT
150
8.3ms Single Half Sine
Wave JEDEC Method
120
HE
90
60
P8
06
HEP
30
0
1
2
5
80 1
-HEP
805
10 20
50
100 200
REVERSE VOLTAGE . ( V)
500
40
60
80
100
120
140
30
4
10
1.0
05
06
3.0
P8
100
FIG . 6 -TYPICAL FRWARD CHARACTERISTICS
100
P8
150
20
HE
FIG . 5 -TYPICAL JUNCTIOON CAPACITANCE
0.1
0
80
50
1
HE
30
5
10
20
NMBER OF CYCLES AT 60Hz
O
EP
60
2
Tj=25 C
PERCENT OF RATED PEAK REVERSE VOLTAGE . (%)
90
1
10
-H
120
100
01
100
O
P8
50
CASE TEMPERATURE . ( % )
Tj=125 C
HE
0
0
INSTANTAN EOUS REVERSE CURRET . (
A)
16
INSTANTANEOUS FORWARD CURRENT . ( A)
PEAK FORWARD SURGE CURRENT . ( A )
AVERAGE FORWARD CURRENT . ( A )
NOTES: 1 . RISE TIME = 7nsmax. INPUT
IMPEDANCE= 1 MEGOHM 22p
2 . RISETIME = 10ns max. SOURSE
IMPEDANCE = 50ohmsf
CAPACITANCE ( pF)
0
-0.25A
0.3
0.1
0.03
.01
.4
.6
.8
1.0
1.2
1.4
1.6
FORWARD VOLTAGE . ( V )
1.8