TO-92 Plastic-Encapsulate Transistors 2N3906 TRANSISTOR (PNP) TO-92 FEATURE z PNP silicon epitaxial planar transistor for switching and Amplifier applications z As complementary type, the NPN transistor 2N3904 is Recommended z This transistor is also available in the SOT-23 case with the type designation MMBT3906 1.EMITTER 2.BASE 3. COLLECTOR 1 2 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.2 A PC Collector Power Dissipation 0.625 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC = -10μA, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC =-1mA , IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO IE= -10μA, IC=0 -5 V Collector cut-off current ICBO VCB= -40 V,IE=0 -0.1 μA Collector cut-off current ICEX VCE= -30 V,VBE(off)=-3V -50 nA IEBO VEB= -5 V , -0.1 μA hFE1 VCE=-1 V, IC= -10mA 100 hFE2 VCE=-1 V, IC= -50mA 60 hFE3 VCE=-1 V, IC= -100mA 30 Emitter cut-off current DC current gain IC=0 400 Collector-emitter saturation voltage VCE(sat) IC= -50mA, IB= -5mA -0.4 V Base-emitter saturation voltage VBE(sat) IC= -50mA, IB= -5mA -0.95 V VCE=-20V, IC= -10mA 250 MHz Transition frequency fT Delay Time td VCC=-3V,VBE=-0.5V, 35 ns Rise Time tr IC=-10mA,IB1=-1mA 35 ns Storage Time ts VCC=-3V,Ic=-10mA 225 ns Fall Time tf IB1=IB2=-1mA 75 ns f = 100MHz CLASSIFICATION OF hFE1 Rank Range O Y G 100-200 200-300 300-400 Typical Characteristics 2N3906