DAYA A733

SOT-23 Plastic-Encapsulate Transistors
A733
z
z
TRANSISTOR (PNP)
SOT-23
FEATURE
Collector-Base Voltage
Complement to C945
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS(TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-150
mA
PC
Collector Power Dissipation
200
mW
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC= -5uA,IE=0
-60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= -1mA , IB=0
-50
V
Emitter-base breakdown voltage
V(BR)EBO
IE= -50uA, IC=0
-5
V
Collector cut-off current
ICBO
VCB= -60 V , IE=0
-0.1
uA
Emitter cut-off current
IEBO
VEB= -5 V ,
-0.1
uA
DC current gain
hFE
VCE= -6 V, IC= -1mA
Collector-emitter saturation voltage
VCE(sat)
IC=0
120
IC= -100mA, IB=- 10mA
Base-emitter voltage
VBE(on)
VCE=-6V,IC=-1.0mA
-0.58
Transition frequency
fT
VCE=-6V,IC=-10mA
50
Collector output capacitance
Cob
VCB=-10V,IE=0,f=1MHZ
Noise figure
NF
VCE=-6V,IC=-0.3mA,
Rg=10kΩ,f=100HZ
475
-0.18
-0.3
V
-0.62
-0.68
V
MHz
4.5
7
pF
6
20
dB
CLASSIFICATION OF hFE
Rank
Range
MARKING
L
H
120-220
220-475
CS
Typical Characteristics
A733