DC COMPONENTS CO., LTD. MJD112 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR Description Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and amplifiers. TO-252(DPAK) Pinning .268(6.80) .252(6.40) 1 = Base 2 = Collector 3 = Emitter .077(1.95) .065(1.65) .217(5.50) .205(5.20) .063(1.60) .055(1.40) .022(0.55) .018(0.45) 2 Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Rating Unit VCBO 100 V Collector-Base Voltage Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5 V Collector Current IC 2 A Total Power Dissipation(TC=25 C) PD 20 W Junction Temperature TJ +150 o -55 to +150 o o Storage Temperature TSTG .228(5.80) .213(5.40) 1 2 .059(1.50) .035(0.90) 3 .035 Max (0.90) .110(2.80) .087(2.20) .032 Max (0.80) .091 Typ (2.30) .024(0.60) .018(0.45) C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Voltage Characteristic BVCBO 100 - - V Collector-Emitter Breakdown Voltage BVCEO 100 - - V IC=30mA ICBO - - 10 µA VCB=80V Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) (1) Base-Emitter On Voltage DC Current Gain(1) Output Capacitance (1)Pulse Test: Pulse Width Test Conditions IC=1mA ICEO - - 20 µA VCE=50V IEBO - - 2 mA VBE=5V VCE(sat) - - 2.5 V IC=2A, IB=8mA VBE(on) - - 2.8 V IC=2A, VCE=3V hFE1 500 - - - IC=0.5A, VCE=3V hFE2 1K - 12K - IC=2A, VCE=3V hFE3 200 - - - IC=4A, VCE=3V Cob - - 100 pF 380µs, Duty Cycle 2% VCB=10V