2N7000 2N7000 N-Channel Enhancement Mode Field Effect Transistor N-Kanal Feldeffekt Transistor – Anreicherungstyp N N Version 2011-02-16 Power dissipation Verlustleistung 18 9 16 S GD 2 x 2.54 Dimensions - Maße [mm] 350 mW Plastic case Kunststoffgehäuse TO-92 (10D3) Weight approx. Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) 2N7000 Drain-Source-voltage – Drain-Source-Spannung VDSS 60 V Drain-Gate-voltage – Drain-Gate-Spannung RGS ≤ 1 MΩ VDGR 60 V Gate-Source-voltage – Gate-Source-Spannung dc tp < 50 µs VGSS VGSS ± 20 V ± 40 V Power dissipation – Verlustleistung Ptot 350 mW Drain current continuos – Drainstrom (dc) Peak Drain current – Drain-Spitzenstrom ID IDM 200 mA 500 mA Operating Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS 150°C -55…+150°C © Diotec Semiconductor AG http://www.diotec.com/ 1 2N7000 Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. Drain-Source breakdown voltage – Drain-Source Durchbruchspannung ID = 10 µA V(BR)DSS Drain-Source leakage current – Drain-Source Leckstrom 60 V G short VDS = 48 V VDS = 48 V, Tj = 125°C IDSS IDSS 1 µA 1 mA ±IGSS 10 nA Gate-Body leakage current – Gate-Substrat Leckstrom VGS = ±15 V Gate-Threshold voltage – Gate-Source Schwellspannung VGS = VDS, ID = 1 mA VGS(th) 0.8 V 3V Drain-Source on-voltage – Drain-Source-Spannung VGS = 10 V, ID = 500 mA VGS = 4.5 V, ID = 75 mA VDS(on) 2.5 V 0.45 V Drain-Source on-state resistance – Drain-Source Einschaltwiderstand VGS = 10 V, ID = 500 mA VGS = 4.5 V, ID = 75 mA RDS(on) RDS(on) Forward Transconductance – Übertragungssteilheit VDS = 10 V, ID = 200 mA gFS 5Ω 6Ω 100 mS Input Capacitance – Eingangskapazität VDS = 25 V, f = 1 MHz Ciss 60 pF Coss 25 pF Crss 5 pF ton 10 ns VDD= 15 V, RL= 30 Ω, ID= 0.5 A, VGS= 10 V, RG= 25 Ω toff 10 ns Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft RthA < 357 K/W 1) Output Capacitance – Ausgangskapazität VDS = 25 V, f = 1 MHz Reverse Transfer Capacitance – Rückwirkungskapazität VDS = 25 V, f = 1 MHz Turn-On Delay Time – Einschaltverzögerung VDD= 15 V, RL= 30 Ω, ID= 0.5 A, VGS= 10 V, RG= 25 Ω Turn-Off Delay Time – Ausschaltverzögerung 1 2 Device mounted on standard PCB material Bauteil montiert auf Standard-Leiterplattenmaterial http://www.diotec.com/ © Diotec Semiconductor AG