BC856W ... BC859W BC856W ... BC859W Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage PNP PNP Version 2011-07-11 2 ±0.1 0.3 1 ±0.1 Type Code 1 1.25±0.1 2.1±0.1 3 2 1.3 Dimensions - Maße [mm] 1=B 2=E 3=C Power dissipation – Verlustleistung 200 mW Plastic case Kunststoffgehäuse SOT-323 Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) BC856W BC857W BC858W BC859W Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open - VCEO 65 V 45 V 30 V Collector-Base-voltage – Kollektor-Basis-Spannung E open - VCBO 80 V 50 V 30 V Emitter-Base-voltage – Emitter-Basis-Spannung C open - VEBO 5V Power dissipation – Verlustleistung Ptot 200 mW 1) Collector current – Kollektorstrom (dc) - IC 100 mA Peak Collector current – Kollektor-Spitzenstrom - ICM 200 mA Peak Base current – Basis-Spitzenstrom - IBM 200 mA Peak Emitter current – Emitter-Spitzenstrom IEM 200 mA Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -55...+150°C -55…+150°C Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. DC current gain – Kollektor-Basis-Stromverhältnis - VCE = 5 V, - IC = 10 µA Group A Group B Group C HFE hFE hFE – – – 140 250 480 – – – - VCE = 5 V, - IC = 2 mA Group A Group B Group C HFE hFE hFE 125 220 420 180 290 520 250 475 800 – – 75 mV 250 mV 300 mV 650 mV Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2) - IC = 10 mA, - IB = 0.5 mA - IC = 100 mA, - IB = 5 mA 1 2 - VCEsat - VCEsat Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% © Diotec Semiconductor AG http://www.diotec.com/ 1 BC856W ... BC859W Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. - VBEsat - VBEsat – – 700 mV 850 mV – – - VBE - VBE 600 mV – 650 mV – 750 mV 820 mV - ICBO - ICBO – – – – 15 nA 5 µA - IEBO – – 100 nA fT 100 MHz – – CCBO – – 4.5 pF CEBO – 10 pF 15 pF F F – – – 1 dB 10 dB 4 dB Base-Emitter saturation voltage – Basis-Sättigungsspannung 2) - IC = 10 mA, - IB = 0.5 mA - IC = 100 mA, - IB = 5 mA Base-Emitter-voltage – Basis-Emitter-Spannung 2) - VCE = 5 V, - IC = 2 mA - VCE = 5 V, - IC = 10 mA Collector-Base cutoff current – Kollektor-Basis-Reststrom - VCB = 30 V, (E open) - VCE = 30 V, Tj = 125°C, (E open) Emitter-Base cutoff current - VEB = 5 V, (C open) Gain-Bandwidth Product – Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 100 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität - VCB = 10 V, IE =ie = 0, f = 1 MHz Emitter-Base Capacitance – Emitter-Basis-Kapazität - VEB = 0.5 V, IC = ic = 0, f = 1 MHz Noise figure – Rauschzahl - VCE = 5 V, - IC = 200 µA, RG = 2 kΩ f = 1 kHz, Δf = 200 Hz BC856W ... BC858W BC859W Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft RthA Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren Marking of available current gain groups per type Stempelung der lieferbare Stromverstärkungsgruppen pro Typ 2 1 2 < 620 K/W 1) BC846W ... BC849W BC856AW = 3A BC857AW = 3E BC858AW = 3J BC856BW = 3B BC857BW = 3F BC858BW = 3K BC859BW = 4B BC857CW = 3G BC858CW = 3L BC859CW = 4C Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss http://www.diotec.com/ © Diotec Semiconductor AG