DIOTEC FR20BYD2

FR20AYD2 ... FR20FYD2
FR20AYD2 ... FR20FYD2
Superfast Silicon Rectifiers – Two Anode Pins
Superschnelle Silizium-Gleichrichter – Zwei Anodenanschlüsse
Version 2010-09-22
1.2
4.5
10.25
± 0.2
Nominal current
Nennstrom
±0.5
4
Type
Typ
1
2
3
1.3
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
50...300 V
Plastic case
Kunststoffgehäuse
TO-263AB
D²PAK
Weight approx.
Gewicht ca.
0.8
0.4
20 A
5.08
1
2/4
3
Dimensions - Maße [mm]
1.8 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging in tubes
Standard Lieferform in Stangen
Maximum ratings and Characteristics
Type / Typ
Grenz- und Kennwerte
Repet. peak reverse voltage
Period. Spitzensperrspanng.
VRRM [V]
Surge peak reverse volt.
Stoßspitzensperrspanng.
VRSM [V]
Forward voltage
Durchlass-Spannung
VF [V] 1)
IF = 5 A
IF = 20 A
FR20AYD2
50
50
< 0.84
< 0.96
FR20BYD2
100
100
< 0.84
< 0.96
FR20CYD2
150
150
< 0.84
< 0.96
FR20DYD2
200
200
< 0.84
< 0.96
FR20FYD2
300
300
< 0.84
< 0.96
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TC = 100°C
IFAV
20 A
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
IFRM
80 A 2)
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
TA = 25°C
IFSM
375/390 A
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
TA = 25°C
i2t
680 A2s
Junction temperature – Sperrschichttemperatur
in DC forward mode – bei Gleichstrom-Durchlassbetrieb
Tj
Tj
-50...+150°C
+200°C
Storage temperature – Lagerungstemperatur
TS
-50...+175°C
1
2
Tj = 25°C
Max. temperature of the case TC = 100°C – Max. Temperatur des Gehäuses TC = 100°C
© Diotec Semiconductor AG
http://www.diotec.com/
1
FR20AYD2 ... FR20FYD2
Characteristics
Kennwerte
Leakage current
Sperrstrom
Tj = 25°C
Tj = 100°C
VR = VRRM
VR = VRRM
IR
IR
< 25 µA
< 250 µA
Reverse recovery time
Sperrverzug
IF = 0.5 A through/über
IR = 1 A to IR = 0.25 A
trr
< 200 ns
Thermal resistance junction to case
Wärmewiderstand Sperrschicht – Gehäuse
RthC
120
< 1.5 K/W
3
10
[%]
[A]
100
Tj = 125°C
102
80
Tj = 25°C
10
60
40
1
20
IF
IFAV
0
10
0
TC
50
100
150
[°C]
Rated forward current vs. temp. of the case
Zul. Richtstrom in Abh. v. d. Temp. Des Gehäuses
2
400a-(5a-0,8v)
-1
http://www.diotec.com/
0.4
VF
0.8
1.0
1.2
1.4
[V] 1.8
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
© Diotec Semiconductor AG