1N1183 ... 1N1190, 1N3766, 1N3768, PBY301 ... PB307 1N1183 ... 1N1190, 1N3766, 1N3768, PBY301 ... PB307 Silicon-Power-Rectifiers Silizium-Leistungs-Gleichrichter Version 2007-05-09 Nominal Current Nennstrom 13.6 Repetitive peak reverse voltage Periodische Spitzensperrspannung 14.5 Ø 4+0.5 SW17 M6 50 ... 1000 V 36.7 Metal case Metallgehäuse DO-5 Weight approx. Gewicht ca. 6g Standard polarity: Cathode to stud / Kathode am Gewinde Index R: Anode to stud / Anode am Gewinde (e. g. 1N1183R) 10.7 Type 35 A Standard packaging: bulk Standard Lieferform: lose im Karton Dimensions - Maße [mm] Maximum ratings Type Typ Grenzwerte Repetive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] 1N1183 = PBY301 50 60 1N1184 = PBY302 100 120 1N1186 = PBY303 200 240 1N1188 = PBY304 400 480 1N1190 = PBY305 600 720 1N3766 = PBY306 800 1000 1N3768 = PBY307 1000 1200 Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last TC = 100°C IFAV 35 A Repetitive peak forward current Periodischer Spitzenstrom f > 15 Hz IFRM 110 A 1) Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle TA = 25°C IFSM 450/500 A Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms TA = 25°C i2t 1000 A2s Tj TS -65...+175°C -65...+175°C Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur 1 Max. case temperature TC = 100°C – Max. Gehäusetemperatur TC = 100°C © Diotec Semiconductor AG http://www.diotec.com/ 1 1N1183 ... 1N1190, 1N3766, 1N3768, PBY301 ... PB307 Characteristics Kennwerte Forward Voltage – Durchlass-Spannung Tj = 25°C IF = 100 A VF < 1.5 V Leakage Current – Sperrstrom Tj = 25°C VR = VRRM IR < 500 µA Thermal Resistance Junction – Case Wärmewiderstand Sperrschicht – Gehäuse RthC < 1 K/W Recommended mounting torque Empfohlenes Anzugsdrehmoment M6 26 ± 10% lb.in. 3 ± 10% Nm 120 103 [%] [A] 100 102 80 Tj = 125°C 10 60 Tj = 25°C 40 1 20 IF IFAV 10-1 0 0 TC 100 50 150 [°C] Rated forward current versus case temperature Zul. Richtstrom in Abh. von der Gehäusetemp. 450a-(100a-1,5v) 0.4 VF 0.8 1.0 1.2 1.4 [V] 1.8 Forward characteristics (typical values) Durchlasskennlinien (typische Werte) 103 [A] 2 10 îF 10 1 2 10 102 [n] 103 Peak forward surge current versus number of cycles at 50 Hz Durchlaß-Spitzenstrom in Abh. von der Zahl der Halbwellen bei 50 Hz http://www.diotec.com/ © Diotec Semiconductor AG