DIOTEC PT800B

PT800A ... PT800M
PT800A ... PT800M
Silicon Rectifier Diodes – Single Diode
Silizium-Gleichrichterdioden – Einzeldiode
Version 2010-03-31
Type
Typ
2.67±0.2
0.42±0.4
3
13.9±0.3
1
2.8±0.3
8A
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
4
1
±0.1
1.3
3
TO-220AC
Weight approx.
Gewicht ca.
1.8 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
0.8
±0.2
5.08±0.1
Standard packaging in tubes
Standard Lieferform in Stangen
Dimensions - Maße [mm]
Maximum ratings and Characteristics
Type
Typ
50...1000 V
Plastic case
Kunststoffgehäuse
8.7±0.3
Ø 3.8±0.2
4
3.9±0.3
4.5±0.2
14.9±0.4
1.2±0.2
Nominal current
Nennstrom
10.1±0.3
Grenz- und Kennwerte
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
Forward voltage
Durchlass-Spannung
VF [V] 1)
IF = 5 A
IF = 8 A
PT800A
50
50
< 1.0
< 1.1
PT800B
100
100
< 1.0
< 1.1
PT800D
200
200
< 1.0
< 1.1
PT800G
400
400
< 1.0
< 1.1
PT800J
600
600
< 1.0
< 1.1
PT800K
800
800
< 1.0
< 1.1
PT800M
1000
1000
< 1.0
< 1.1
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TC = 100°C
IFAV
8A
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
IFRM
30 A 2)
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
TA = 25°C
IFSM
135/150 A
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
TA = 25°C
i2t
90 A2s
Tj
-50...+150°C
-50...+175°C
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
1
2
TS
Tj = 25°C
Max. temperature of the case TC = 100°C – Max. Temperatur des Gehäuses TC = 100°C
© Diotec Semiconductor AG
http://www.diotec.com/
1
PT800A ... PT800M
Characteristics
Kennwerte
Leakage current
Sperrstrom
Tj = 25°C
VR = VRRM
IR
Thermal resistance junction to case
Wärmewiderstand Sperrschicht – Gehäuse
< 10 µA
RthC
< 2.5 K/W
10
2
120
[%]
[A]
100
10
80
Tj = 125°C
Tj = 25°C
1
60
40
10-1
20
IF
IFAV
0
-2
0
TC
50
100
150
[°C]
Rated forward current vs. temp. of the case
Zul. Richtstrom in Abh. v. d. Gehäusetemperatur
2
200a-(5a-0.95v)
10
http://www.diotec.com/
0.4
VF
0.8
1.0
1.2
1.4
[V] 1.8
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
© Diotec Semiconductor AG