Single N-channel MOSFET ELM13434CA-S ■General description ■Features The ELM13434CA-S uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. • • • • • Vds=30V Id=4.2A (Vgs=10V) Rds(on) < 52mΩ (Vgs=10V) Rds(on) < 75mΩ (Vgs=4.5V) ESD protected ■Maximum absolute ratings Parameter Symbol Drain-source voltage Gate-source voltage Limit 10sec Steady-state Vds Vgs Continuous drain current Ta=25°C 30 ±20 Id Ta=70°C Pulsed drain current Ta=25°C Ta=70°C Power dissipation 3.5 3.3 2.8 30 1.40 0.90 Pd Junction and storage temperature range Tj, Tstg Note V V 4.2 Idm Unit 1.00 0.64 -55 to 150 A 1, 6 A 2 W °C ■Thermal characteristics Parameter Maximum junction-to-ambient Symbol t≤10s Maximum junction-to-ambient Maximum junction-to-lead Steady-state Steady-state Rθja Rθjl ■Pin configuration Typ. 70 Max. 90 Unit °C/W 100 63 125 80 °C/W °C/W 1 2 1 3 ■Circuit SOT-23(TOP VIEW) 3 Note D Pin No. Pin name 1 2 GATE SOURCE 3 DRAIN G S 4- 1 Single N-channel MOSFET ELM13434CA-S ■Electrical characteristics Parameter Symbol Condition Min. Typ. Ta=25°C Max. Unit STATIC PARAMETERS Drain-source breakdown voltage BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Vds=30V, Vgs=0V Gate-body leakage current Igss Vds=0V, Vgs=±16V Gate threshold voltage On state drain current Static drain-source on-resistance Forward transconductance Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS Rds(on) Gfs Vsd Tj=55°C 5 1.00 30 Tj=125°C Vgs=4.5V, Id=2A Vds=5V, Id=4.2A Is=1A, Vgs=0V Output capacitance Reverse transfer capacitance Gate resistance Coss Crss Rg μA 1.32 1.80 V A 43 58 52 74 59 8.5 0.77 75 SWITCHING PARAMETERS Total gate charge (10V) Total gate charge (4.5V) Qg Qg Gate-source charge Gate-drain charge Qgs Qgd 269 Vgs=0V, Vds=15V, f=1MHz Vgs=0V, Vds=0V, f=1MHz Vgs=10V, Vds=15V, Id=4.2A td(on) tr Vgs=10V, Vds=15V td(off) Rl=3.6Ω, Rgen=3Ω tf trr Qrr If=4.2A, dl/dt=100A/μs If=4.2A, dl/dt=100A/μs μA 10 Is Ciss Turn-off fall time Body diode reverse recovery time Body diode reverse recovery charge NOTE : Vgs=10V, Id=4.2A V 1 Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=10V, Vds=5V Input capacitance Turn-on delay time Turn-on rise time Turn-off delay time 30 65 41 1.0 5.70 3.00 mΩ 1.00 mΩ S V 1.8 A 340 pF 1.5 pF pF Ω 7.20 1.37 0.65 nC nC nC nC 2.6 5.5 15.2 3.8 8.0 23.0 ns ns ns 3.7 15.5 7.1 5.5 21.0 ns ns nC 1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is based on the t ≤ 10s themal resistance rating. 2. Repetitive rating, pulse width limited by junction temperature. 3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient. 4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max. 5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with Ta=25°C. The SOA curve provides a single pulse rating. 6. The current rating is based on the t≤10s thermal resistance rating. 4- 2 Single N-channel MOSFET ELM13434CA-S ■Typical electrical and thermal characteristics 4- 3 Single N-channel MOSFET ELM13434CA-S 4- 4