Single P-channel MOSFET ELM34419AA-N ■General description ■Features ELM34419AA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=-30V Id=-10A Rds(on) < 20mΩ (Vgs=-10V) Rds(on) < 35mΩ (Vgs=-4.5V) ■Maximum absolute ratings Parameter Symbol Limit Unit Drain-source voltage Vds -30 V Gate-source voltage Vgs ±25 V Ta=25°C Continuous drain current Ta=70°C -10 Id A Pulsed drain current Idm -8 -55 Avalanche current Iar -29 A Eas 43 3 2 -55 to 150 mJ Avalanche energy L=0.1mH Ta=25°C Ta=70°C Power dissipation Junction and storage temperature range Pd Tj, Tstg Note A 3 W °C ■Thermal characteristics Parameter Maximum junction-to-case Maximum junction-to-ambient Symbol Rθjc Rθja ■Pin configuration Typ. Max. 25 40 Unit °C/W °C/W Note ■Circuit SOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Pin No. 1 2 Pin name SOURCE SOURCE 3 4 5 SOURCE GATE DRAIN 6 7 8 DRAIN DRAIN DRAIN 4- 1 D G S Single P-channel MOSFET ELM34419AA-N ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition Min. BVdss Id=-250μA, Vgs=0V -30 Zero gate voltage drain current Idss Gate-body leakage current Igss Gate threshold voltage Static drain-source on-resistance Forward transconductance Diode forward voltage Max. body-diode continuous current V Vds=-24V, Vgs=0V -1 -10 μA ±100 nA -1.5 15 -3.0 20 V mΩ 25 35 mΩ -1.2 S V -2.5 A Vds=-20V, Vgs=0V, Tj=125°C Vds=0V, Vgs=±25V Vgs(th) Vds=Vgs, Id=-250μA Vgs=-10V, Id=-10A Rds(on) Vgs=-4.5V, Id=-7A Gfs Vsd Ta=25°C Typ. Max. Unit Note Vds=-10V, Id=-10A Is=-1A, Vgs=0V -1.0 24 Is 1 1 1 DYNAMIC PARAMETERS Input capacitance Ciss 1490 pF Output capacitance Reverse transfer capacitance Gate resistance Coss Vgs=0V, Vds=-15V, f=1MHz Crss Rg Vgs=15mV, Vds=0V, f=1MHz 301 190 7.8 pF pF Ω SWITCHING PARAMETERS Total gate charge Gate-source charge Qg Qgs 26 4 nC nC 2 2 Vgs=-10V, Vds=-15V Id=-10A 9.0 Gate-drain charge Turn-on delay time Turn-on rise time Qgd td(on) tr Vgs=-10V, Vds=-15V 5 5.7 10.0 nC ns ns 2 2 2 Turn-off delay time Turn-off fall time td(off) Id≈-1A, Rgen=6Ω tf 18.0 5.0 ns ns 2 2 NOTE : 1. Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 4- 2 Single P-channel MOSFET Level Enhancement Mode P2003EV8 NIKO-SEM P-Channel LogicELM34419AA-N SOP-8 Field Effect Transistor Halogen-Free & Lead-Free (Preliminary) ■Typical electrical and thermal characteristics Output Characteristics V GS = 10V 0.050 V GS = 5V RDS(ON)ON-Resistance(OHM) -ID, Drain-To-Source Current(A) 60 50 V GS = 7V V GS = 4.5V 40 30 20 10 V GS = 3V 0 0.5 1 1.5 2 0.045 0.040 0.025 0.015 0.010 On-Resistance VS Gate-To-Source 10 20 30 40 -ID , Drain-To-Source Current 50 On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) RDS(ON)ON-Resistance(OHM) 0 RDS(ON) x 1.8 0.05 0.04 0.03 0.02 0.01 ID = -10A 0 2 4 6 8 -VGS, Gate-To-Source Voltage(V) RDS(ON) x 1.6 RDS(ON) x 1.4 RDS(ON) x 1.2 RDS(ON) x 1.0 RDS(ON) x 0.8 RDS(ON) x 0.6 - 50 10 Transfer Characteristics -VGS , Gate-To-Source Voltage(V) 40 30 Tj=125°C 20 Tj=25°C Tj=-20°C 10 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 - 25 0 25 50 75 100 TJ , Junction Temperature(C) 125 150 ID = -10A VDS = -15V 8 6 4 2 0 5.0 0 -VGS, Gate-To-Source Voltage(V) REV 0.9 VGS = 10V ID = -10A Gate charge Characteristics 10 50 -ID, Drain-To-Source Current(A) VGS = 10V 0.020 -VDS, Drain-To-Source Voltage(V) 0 VGS = 4.5V 0.035 0.005 2.5 On-Resistance VS Drain Current 4.5 9 13.5 18 22.5 27 Qg , Total Gate Charge 3 4- 3 Jan-08-2009 P2003EV8 Logic Level Enhancement Mode NIKO-SEM P-ChannelSingle MOSFET FieldP-channel Effect Transistor SOP-8 Halogen-Free & Lead-Free (Preliminary) ELM34419AA-N Capacitance Characteristic Body Diode Forward Voltage 1 .0 E + 0 2 1750 1 .0 E + 0 1 1500 1 .0 E + 0 0 TJ =150° C -IS , Source Current(A) C , Capacitance(pF) 2000 1250 1 . 0 E -0 1 1000 TJ =25° C 1 . 0 E -0 2 750 1 . 0 E -0 3 500 1 . 0 E -0 4 250 0 1 .0 E -0 5 0 5 10 15 20 25 0 .2 0 .0 30 -VDS, Drain-To-Source Voltage(V) Safe Operating Area 0 .8 1m s 1200 10m s 1000 Power(W) . 100m s Operation in This Area is Lim ited by RDS(ON) 1S 10s NOTE : 1.V GS= 10V 2.TA=25° C 3.R.JA =40° C/W 0.1 1 .2 SINGLE PULSE R.JA= 40° C/W TA=25° C 800 600 400 DC 200 4.Single Pulse 0.01 0.1 1 .0 Single Pulse Maximum Power Dissipation 1400 10 -ID , Drain Current(A) 0 .6 -VSD, Source-To-Drain Voltage(V) 100 1 0 .4 1 10 0 0.0001 100 0.001 -VDS, Drain-To-Source Voltage(V) 0.01 0.1 1 10 Single Pulse Time(s) Transient Thermal Resistance r(t) , Mormalized Effective Transient Thermal Response Curve T1 , Square Wave Pulse Duration[sec] REV 0.9 4 4- 4 Jan-08-2009