Dual N-channel MOSFET ELM34810AA-N ■General description ■Features ELM34810AA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=30V Id=7A Rds(on) < 21mΩ (Vgs=10V) Rds(on) < 35mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Ta=25°C Ta=70°C Continuous drain current Pulsed drain current Symbol Vds Limit 30 Unit V Vgs ±20 V Id 7 6 A Idm Ta=25°C Power dissipation Pd Ta=70°C Junction and storage temperature range Tj, Tstg 40 2.0 A Note 3 W 1.3 -55 to 150 °C ■Thermal characteristics Parameter Symbol Maximum junction-to-ambient Steady-state Typ. Rθja ■Pin configuration Max. Unit 62.5 °C/W Note ■Circuit SOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Pin No. 1 2 3 Pin name SOURCE1 GATE1 SOURCE2 4 5 6 GATE2 DRAIN2 DRAIN2 7 8 DRAIN1 DRAIN1 4- 1 D2 D1 G2 G1 S1 S2 Dual N-channel MOSFET ELM34810AA-N ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Vds=24V, Vgs=0V Vds=20V, Vgs=0V, Tj=55°C Gate-body leakage current Igss Vds=0V, Vgs=±20V Gate threshold voltage On state drain current Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=10V, Vds=5V Static drain-source on-resistance Rds(on) 30 1.0 25 V 1.5 1 10 μA ±100 nA 3.0 V A Vgs=10V, Id=7A 15 21 mΩ 21 24 35 mΩ S Forward transconductance Gfs Vgs=4.5V, Id=6A Vds=15V, Id=5A Diode forward voltage Vsd If=1A, Vgs=0V Max.body-diode continuous current Pulsed current Is Ism DYNAMIC PARAMETERS Input capacitance Output capacitance Ciss Coss Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Min. Ta=25°C Typ. Max. Unit Note 1 1 1.2 V 1 1.3 2.5 A A 3 1650 365 pF pF Crss 170 pF Qg 18.0 Vgs=0V, Vds=15V, f=1MHz 1 25.0 nC 2 2 2 2 Gate-source charge Gate-drain charge Turn-on delay time Qgs Vgs=5V, Vds=15V, Id=7A Qgd td(on) 5.5 6.7 11 20 nC nC ns Turn-on rise time Turn-off delay time tr Vgs=10V, Vds=15V, Id≈1A td(off) Rgen=6Ω 9 25 18 40 ns ns 2 2 11 15.5 7.9 20 ns ns nC 2 Turn-off fall time Body diode reverse recovery time Body diode reverse recovery charge tf trr Qrr If=5A, dl/dt=100A/μs NOTE : 1. Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 4- 2 NIKO-SEM Dual N-Channel Enhancement Mode Field Effect Transistor Dual N-channel MOSFET P2103HVG SOP-8 Lead-Free ELM34810AA-N ■Typical electrical and thermal characteristics 3 4- 3 Jun-29-2004 NIKO-SEM Dual N-Channel Enhancement Mode Field Effect Transistor Dual N-channel MOSFET P2103HVG SOP-8 Lead-Free ELM34810AA-N 4 4- 4 Jun-29-2004