ELPIDA EDD1232ACBH-6B

PRELIMINARY DATA SHEET
128M bits DDR SDRAM
EDD1232ACBH-6B (4M words × 32 bits)
Features
• Density: 128M bits
• Organization
 1M words × 32 bits × 4 banks
• Package: 144-ball FBGA
 Lead-free (RoHS compliant) and Halogen-free
• Power supply: VDD, VDDQ = 2.5V ± 0.2V
• Data rate: 333Mbps (max.)
• Four internal banks for concurrent operation
• Interface: SSTL_2
• Burst lengths (BL): 2, 4, 8
• Burst type (BT):
 Sequential (2, 4, 8)
 Interleave (2, 4, 8)
• /CAS Latency (CL): 2.5, 3
• Precharge: auto precharge option for each burst
access
• Driver strength: weak/matched
• Refresh: auto-refresh, self-refresh
• ×32 organization
• Double-data-rate architecture; two data transfers per
clock cycle
• The high-speed data transfer is realized by the 2 bits
prefetch pipelined architecture
• Bi-directional data strobe (DQS) is transmitted
/received with data for capturing data at the receiver
• Data inputs, outputs, and DM are synchronized with
DQS
• DQS is edge-aligned with data for READs; centeraligned with data for WRITEs
• Differential clock inputs (CK and /CK)
• DLL aligns DQ and DQS transitions with CK
transitions
• Commands entered on each positive CK edge; data
and data mask referenced to both edges of DQS
• Data mask (DM) for write data
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Specifications
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• Refresh cycles: 4096 cycles/32ms
 Average refresh period: 7.8µs
• Operating ambient temperature range
 TA = 0°C to +70°C
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Document No. E1550E10 (Ver. 1.0)
Date Published January 2010 (K) Japan
Printed in Japan
URL: http://www.elpida.com
This product became EOL in March, 2010.
Elpida Memory, Inc. 2010
EDD1232ACBH-6B
Ordering Information
Part number
Die
revision
Organization
(words × bits)
Internal
banks
Data Rate
Mbps (max.)
JEDEC speed bin
(CL-tRCDRD-tRP)
Package
EDD1232ACBH-6B-F
C
4M × 32
4
333
DDR333B (2.5-3-3)
144-ball FBGA
Part Number
E D D 12 32 A C BH - 6B - F
Elpida Memory
Type
D: Monolithic Device
EO
Environment Code
F: Lead Free (RoHS compliant)
and Halogen Free
Product Family
D: DDR SDRAM
Speed
6B: DDR333B (2.5-3-3)
Density / Bank
12: 128M / 4-bank
Organization
32: x32
Package
BH: FBGA
Power Supply, Interface
A: 2.5V, SSTL_2
Die Rev.
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Preliminary Data Sheet E1550E10 (Ver. 1.0)
2
EDD1232ACBH-6B
Pin Configurations
/xxx indicates active low signal.
144-ball FBGA
2
3
4
5
6
7
8
DQ3
DQ2
DQ0
VDDQ
DQ1
9
10
11
12
13
DM3
DQS3
B
DQS0
DM0 VSSQ
DQ31 DQ29 DQ28 VSSQ
C
DQ4
VDDQ
NC
VDDQ VDDQ DQ30 VDDQ
NC
VDDQ DQ27
EO
D
DQ6
E
F
DQ7
DQ5
VSSQ VSSQ VSSQ
VDDQ VDD
VSS
DQ17 DQ16 VDDQ VSSQ
G
DQ19 DQ18 VDDQ VSSQ
H
K
DM2
NC
VSSQ
L
J
DQS2
DQ21 DQ20 VDDQ VSSQ
DQ22 DQ23 VDDQ VSSQ
VDD
VDD
VSSQ VSSQ VSSQ DQ26 DQ25
VSSQ
VSS
VSS
VSSQ
VSS
VSS
VSS
VSS
VSSQ VDDQ DQ15 DQ14
VSS
VSS
VSS
VSS
VSSQ VDDQ DQ13 DQ12
VSS
VSS
VSS
VSS
VSSQ
DM1
DQS1
VSS
VSS
VSS
VSS
VSSQ VDDQ DQ11
DQ10
VSS
VSS
VSS
VSS
VSSQ VDDQ
DQ9
DQ8
A10
VDD
VDD
RFU
Thermal Thermal Thermal Thermal
Thermal Thermal Thermal Thermal
Thermal Thermal Thermal Thermal
Thermal Thermal Thermal Thermal
VSS
VDD
NC
VDDQ DQ24
L
/WE
/RAS
NC
/CS
NC
VDD
M
N
VSS
Pr
/CAS
VSS
VDD
NC
NC
NC
BA1
A2
A11
A9
A5
RFU
CK
/CK
NC
BA0
A0
A1
A3
A4
A6
A7
A8
(AP)
CKE
VREF
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(Top view)
Function
A0 to A11
Address inputs
BA0, BA1
Bank select address
DQ0 to DQ31
Data-input/output
DQS0 to DQS3
Input and output data strobe
Pin name
Function
CK
Clock input
/CK
Differential Clock input
CKE
Clock enable
VREF
Input reference voltage
Chip select
VDD
/RAS
Row address strobe
VSS
/CAS
Column address strobe
VDDQ
/WE
Write enable
VSSQ
DM0 to DM3
Input mask
RFU
NC
No connection
Power for internal circuit
Ground for internal circuit
Power for DQ circuit
Ground for DQ circuit
Reserved for future use
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Pin name
Preliminary Data Sheet E1550E10 (Ver. 1.0)
3
EDD1232ACBH-6B
CONTENTS
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Specifications.................................................................................................................................................1
Features.........................................................................................................................................................1
Ordering Information......................................................................................................................................2
Part Number ..................................................................................................................................................2
Pin Configurations .........................................................................................................................................3
Electrical Specifications.................................................................................................................................5
Block Diagram .............................................................................................................................................11
Pin Function.................................................................................................................................................12
Command Operation ...................................................................................................................................14
Simplified State Diagram .............................................................................................................................21
Operation of the DDR SDRAM ....................................................................................................................22
Timing Waveforms.......................................................................................................................................43
Package Drawing ........................................................................................................................................49
Recommended Soldering Conditions..........................................................................................................50
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Preliminary Data Sheet E1550E10 (Ver. 1.0)
4
EDD1232ACBH-6B
Electrical Specifications
• All voltages are referenced to VSS (GND).
• After power up, wait more than 200 µs and then, execute power on sequence and CBR (Auto) refresh before
proper device operation is achieved.
Absolute Maximum Ratings
Symbol
Rating
Unit
Voltage on any pin relative to VSS
VT
–1.0 to +3.6
V
Supply voltage relative to VSS
VDD
–1.0 to +3.6
V
Short circuit output current
IOS
50
mA
Power dissipation
PD
1.0
W
Operating ambient temperature
TA
0 to +70
°C
Storage temperature
Tstg
–55 to +125
°C
EO
Parameter
Note
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended DC Operating Conditions (TA = 0°C to +70°C)
Supply voltage
Symbol
L
Parameter
VDD,
VDDQ
VSS,
VSSQ
min.
typ.
max.
Unit
Notes
2.3
2.5
2.7
V
1
0
0
0
V
VREF
0.49 × VDDQ
0.50 × VDDQ
0.51 × VDDQ
V
Termination voltage
VTT
VREF – 0.04
VREF
VREF + 0.04
V
Input high voltage
VIH (DC)
VREF + 0.15
—
VDDQ + 0.3
V
2
Input low voltage
VIL (DC)
–0.3
—
VREF – 0.15
V
3
VIN (DC)
–0.3
—
VDDQ + 0.3
V
4
VIX (DC)
0.5 × VDDQ − 0.2V
0.5 × VDDQ
0.5 × VDDQ + 0.2V V
VID (DC)
0.36
—
VDDQ + 0.6
V
5, 6
VDDQ must be lower than or equal to VDD.
VIH is allowed to exceed VDD up to 3.6V for the period shorter than or equal to 5ns.
VIL is allowed to outreach below VSS down to –1.0V for the period shorter than or equal to 5ns.
VIN (DC) specifies the allowable DC execution of each differential input.
VID (DC) specifies the input differential voltage required for switching.
VIH (CK) min assumed over VREF + 0.18V, VIL (CK) max assumed under VREF – 0.18V
if measurement.
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Notes: 1.
2.
3.
4.
5.
6.
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Input voltage level,
CK and /CK inputs
Input differential cross point
voltage, CK and /CK inputs
Input differential voltage,
CK and /CK inputs
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Input reference voltage
Preliminary Data Sheet E1550E10 (Ver. 1.0)
5
EDD1232ACBH-6B
DC Characteristics 1 (TA = 0°C to +70°C, VDD, VDDQ = 2.5V ± 0.2V, VSS, VSSQ = 0V)
Parameter
Symbol
Operating current
(ACT-PRE)
Operating current
(ACT-READ-PRE)
Idle power down standby current
max.
Unit
IDD0
100
mA
IDD1
135
mA
IDD2P
15
mA
Test condition
CKE ≥ VIH,
tRC = tRC (min.)
CKE ≥ VIH, BL = 4,CL = 2.5,
tRC = tRC (min.)
CKE ≤ VIL
CKE ≥ VIH, /CS ≥ VIH
DQ, DQS, DM = VREF
CKE ≥ VIH, /CS ≥ VIH
DQ, DQS, DM = VREF
Notes
1, 2, 9
1, 2, 5
4
4, 5
Floating idle standby current
IDD2F
30
mA
Quiet idle standby current
IDD2Q
25
mA
Active power down standby current
IDD3P
30
mA
CKE ≤ VIL
3
3, 5, 6
4, 10
IDD3N
80
mA
CKE ≥ VIH, /CS ≥ VIH
tRAS = tRAS (max.)
IDD4R
200
mA
CKE ≥ VIH, BL = 2, CL = 2.5
1, 2, 5, 6
IDD4W
200
mA
CKE ≥ VIH, BL = 2,CL = 2.5
1, 2, 5, 6
Auto-refresh current
IDD5
130
mA
Self-refresh current
IDD6
7
mA
Operating current
(4 banks interleaving)
IDD7A
300
mA
EO
Active standby current
Operating current
(Burst read operation)
Operating current
(Burst write operation)
tRFC = tRFC (min.),
Input ≤ VIL or ≥ VIH
Input ≥ VDD – 0.2 V
Input ≤ 0.2 V
BL = 4
1, 5, 6, 7
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Notes: 1.These IDD data are measured under condition that DQ pins are not connected.
2. One bank operation.
3. One bank active.
4. All banks idle.
5. Command/Address transition once per one clock cycle.
6. DQ, DM and DQS transition twice per one clock cycle.
7. 4 banks active. Only one bank is running at tRC = tRC (min.)
8. The IDD data on this table are measured with regard to tCK = tCK (min.) in general.
9. Command/Address transition once every two clock cycle.
10. Command/Address stable at ≥ VIH or ≤ VIL.
DC Characteristics 2 (TA = 0°C to +70°C, VDD, VDDQ = 2.5V ± 0.2V, VSS, VSSQ = 0V)
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Parameter
Symbol
min.
max.
Unit
Test condition
Input leakage current
ILI
–2
2
µA
VDD ≥ VIN ≥ VSS
Output leakage current
ILO
–5
5
µA
VDDQ ≥ VOUT ≥ VSS
Notes
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Preliminary Data Sheet E1550E10 (Ver. 1.0)
6
EDD1232ACBH-6B
Pin Capacitance (TA = +25°C, VDD, VDDQ = 2.5V ± 0.2V)
Parameter
Symbol
Pins
min.
typ.
max.
Unit
Notes
Input capacitance
CI1
CK, /CK
1
—
5
pF
1
CI2
All other input pins
1
—
4
pF
1
CI/O
DQ, DM, DQS
1
—
6
pF
1, 2
Data input/output capacitance
Notes: 1. These parameters are measured on conditions:
TA = +25°C.
2. DOUT circuits are disabled.
f = 100MHz, VOUT = VDDQ/2, ∆VOUT = 0.2V,
AC Characteristics (TA = 0°C to +70°C, VDD, VDDQ = 2.5V ± 0.2V, VSS, VSSQ = 0V)
-6B
Symbol
min.
max.
Unit
Notes
Clock cycle time
(CL = 2.5)
tCK
6
12
ns
10
EO
Parameter
tCK
6
12
ns
CK high-level width
tCH
0.45
0.55
tCK
CK low-level width
tCL
0.45
0.55
tCK
CK half period
tHP
min
(tCH, tCL)
—
tCK
DQ output access time from CK, /CK
tAC
–0.7
0.7
ns
DQS output access time from CK, /CK
tDQSCK
–0.7
0.7
ns
2, 11
DQS to DQ skew
tDQSQ
—
0.45
ns
3
tQH
tHP – 0.55
—
ns
L
(CL = 3)
DQ/DQS output hold time from DQS
2, 11
Data-out high-impedance time from CK, /CK
tHZ
—
0.7
ns
5, 11
Data-out low-impedance time from CK, /CK
tLZ
–0.7
0.7
ns
6, 11
Read postamble
DQ and DM input setup time
DQ and DM input hold time
DQ and DM input pulse width
Write preamble hold time
tRPRE
0.9
1.1
tCK
tRPST
0.4
0.6
tCK
tDS
0.45
—
ns
8
tDH
0.45
—
ns
8
7
tDIPW
1.75
—
ns
tWPRES
0
—
ns
tWPREH
0.25
—
tCK
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Write preamble setup time
Pr
Read preamble
tWPST
0.4
0.6
tCK
Write command to first DQS latching transition
tDQSS
0.75
1.25
tCK
DQS falling edge to CK setup time
tDSS
0.2
—
tCK
DQS falling edge hold time from CK
tDSH
0.2
—
tCK
DQS input high pulse width
tDQSH
0.35
—
tCK
DQS input low pulse width
tDQSL
0.35
Address and control input setup time
tIS
1.0
Address and control input hold time
tIH
1.0
Address and control input pulse width
tIPW
2.2
tMRD
2
Active to Precharge command period
tRAS
42
Active to Active/Auto refresh command period
tRC
60
tCK
—
ns
8
—
ns
8
—
ns
7
—
tCK
120000
ns
—
ns
Auto refresh to Active/Auto refresh command period
tRFC
72
—
ns
Active to Read delay
tRCDRD
18
—
ns
Preliminary Data Sheet E1550E10 (Ver. 1.0)
7
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Mode register set command cycle time
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Write postamble
EDD1232ACBH-6B
-6B
Parameter
Symbol
min.
max.
Unit
Active to Write delay
tRCDWR
12
—
ns
Precharge to active command period
tRP
18
—
ns
Active to Autoprecharge delay
tRAP
tRCDRD min.
—
ns
Active to active command period
tRRD
12
—
ns
Write recovery time
tWR
18
—
ns
Auto precharge write recovery and precharge time
tDAL
6
—
tCK
Internal write to Read command delay
tWTR
2
—
tCK
Average periodic refresh interval
tREF
—
7.8
µs
Notes
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Notes: 1. On all AC measurements, we assume the test conditions shown in the next page. For timing parameter
definitions, see ‘Timing Waveforms’ section.
2. This parameter defines the signal transition delay from the cross point of CK and /CK. The signal
transition is defined to occur when the signal level crossing VTT.
3. The timing reference level is VTT.
4. Output valid window is defined to be the period between two successive transition of data out or DQS
(read) signals. The signal transition is defined to occur when the signal level crossing VTT.
5. tHZ is defined as DOUT transition delay from Low-Z to High-Z at the end of read burst operation. The
timing reference is cross point of CK and /CK. This parameter is not referred to a specific DOUT voltage
level, but specify when the device output stops driving.
6. tLZ is defined as DOUT transition delay from High-Z to Low-Z at the beginning of read operation. This
parameter is not referred to a specific DOUT voltage level, but specify when the device output begins
driving.
7. Input valid windows is defined to be the period between two successive transition of data input or DQS
(write) signals. The signal transition is defined to occur when the signal level crossing VREF.
8. The timing reference level is VREF.
9. The transition from Low-Z to High-Z is defined to occur when the device output stops driving. A specific
reference voltage to judge this transition is not given.
10. tCK (max.) is determined by the lock range of the DLL. Beyond this lock range, the DLL operation is not
assured.
11. tCK = tCK (min) when these parameters are measured. Otherwise, absolute minimum values of these
values are 10% of tCK.
12. VDD is assumed to be 2.5V ± 0.2V. VDD power supply variation per cycle expected to be less than
0.4V/400 cycle.
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Preliminary Data Sheet E1550E10 (Ver. 1.0)
8
EDD1232ACBH-6B
Test Conditions
Parameter
Symbol
Value
Unit
Input reference voltage
VREF
VDDQ/2
V
Termination voltage
VTT
VREF
V
Input high voltage
VIH (AC)
VREF + 0.31
V
Input low voltage
VIL (AC)
VREF − 0.31
V
VID (AC)
0.62
V
VIX (AC)
VREF
V
SLEW
1
V/ns
Input differential voltage, CK and /CK
inputs
Input differential cross point voltage,
CK and /CK inputs
Input signal slew rate
VDD
CK VID
VREF
/CK
VSS
tCL
tCH
VIX
VDD
L
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tCK
VIH
VIL
VREF
VSS
∆t
Pr
SLEW = (VIH (AC) – VIL (AC))/∆t
VTT
Measurement point
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DQ
RT = 50Ω
CL = 30pF
Input Waveforms and Output Load
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Preliminary Data Sheet E1550E10 (Ver. 1.0)
9
EDD1232ACBH-6B
Timing Parameter Measured in Clock Cycle
Number of clock cycle
tCK
6ns
Symbol
min.
max.
Unit
Write to pre-charge command delay (same bank)
tWPD
4 + BL/2

tCK
Read to pre-charge command delay (same bank)
tRPD
BL/2

tCK
Write to read command delay (to input all data)
tWRD
3 + BL/2

tCK
Burst stop command to write command delay
(CL = 2.5)
tBSTW
3

tCK
(CL = 3)
tBSTW
3

tCK
Burst stop command to DQ High-Z
(CL = 2.5)
tBSTZ
2.5
2.5
tCK
(CL = 3)
tBSTZ
3
3
tCK
Read command to write command delay
(CL = 2.5)
tRWD
3 + BL/2

tCK
(CL = 3)
tRWD
3 + BL/2

tCK
Pre-charge command to High-Z
(CL = 2.5)
tHZP
2.5
2.5
tCK
EO
Parameter
tHZP
3
3
tCK
Write command to data in latency
tWCD
1
1
tCK
Write recovery time
tWR
3

tCK
DM to data in latency
tDMD
0
0
tCK
Mode register set command cycle time
tMRD
2

tCK
L
(CL = 3)
tSNR
12

tCK
Self refresh exit to read command
tSRD
200

tCK
Power down entry
tPDEN
1
1
tCK
tPDEX
1

tCK
Power down exit to command input
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Self refresh exit to non-read command
Preliminary Data Sheet E1550E10 (Ver. 1.0)
10
EDD1232ACBH-6B
Clock
generator
Block Diagram
Bank 3
Bank 2
Bank 1
A0 to A11, BA0, BA1
Memory cell array
Bank 0
Sense amp.
L
Control logic
Command decoder
EO
/CS
/RAS
/CAS
/WE
Mode
register
Row
address
buffer
and
refresh
counter
Row decoder
CK
/CK
CKE
Column decoder
Column
address
buffer
and
burst
counter
Data control circuit
Latch circuit
Pr
DLL
CK, /CK
Input & Output buffer
DQS
DM
DQ
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Preliminary Data Sheet E1550E10 (Ver. 1.0)
11
EDD1232ACBH-6B
Pin Function
CK, /CK (input pins)
The CK and the /CK are the master clock inputs. All inputs except DM, DQS and DQs are referred to the cross point
of the CK rising edge and the /CK falling edge. When a read operation, DQS and DQs are referred to the cross point
of the CK and the /CK. When a write operation, DQS and DQs are referred to the cross point of the DQS and the
VREF level. DQS for write operation is referred to the cross point of the CK and the /CK. CK is the master clock
input to this pin. The other input signals are referred at CK rising edge.
/CS (input pin)
When /CS is Low, commands and data can be input. When /CS is high, all inputs are ignored. However, internal
operations (bank active, burst operations, etc.) are held.
EO
/RAS, /CAS, and /WE (input pins)
These pins define operating commands (read, write, etc.) depending on the combinations of their voltage levels.
See "Command operation".
A0 to A11 (input pins)
Row address (AX0 to AX11) is determined by the A0 to the A11 level at the cross point of the CK rising edge and the
/CK falling edge in a bank active command cycle. Column address (See “Address Pins Table”) is loaded via the A0
to the A7 at the cross point of the CK rising edge and the /CK falling edge in a read or a write command cycle. This
column address becomes the starting address of a burst operation.
[Address Pins Table]
L
Address (A0 to A11)
Part number
EDD1232ACBH
Row address
Column address
AX0 to AX11
AY0 to AY7
Pr
A8 (AP) (input pin)
A8 defines the precharge mode when a precharge command, a read command or a write command is issued. If A8
= high when a precharge command is issued, all banks are precharged. If A8 = Low when a precharge command is
issued, only the bank that is selected by BA1/BA0 is precharged. If A8 = high when read or write command, autoprecharge function is enabled. While A8 = Low, auto-precharge function is disabled.
[Bank Select Signal Table]
BA0
Bank 0
L
Bank 1
H
L
Bank 3
H
BA1
L
L
H
H
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Bank 2
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BA0 and BA1 (input pins)
BA0, BA1 are bank select signals (BA). The memory array is divided into bank 0, bank 1, bank 2 and bank 3. (See
Bank Select Signal Table)
Remark: H: VIH. L: VIL.
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Preliminary Data Sheet E1550E10 (Ver. 1.0)
12
EDD1232ACBH-6B
CKE (input pin)
This pin determines whether or not the next CK is valid. If CKE is high, the next CK rising edge is valid. If CKE is
Low. CKE controls power down and self-refresh. The power down and the self-refresh commands are entered
when the CKE is driven Low and exited when it resumes to high. CKE must be maintained high throughout read or
write access.
The CKE level must be kept for 1 CK cycle at least, that is, if CKE changes at the cross point of the CK rising edge
and the /CK falling edge with proper setup time tIS, by the next CK rising edge CKE level must be kept with proper
hold time tIH.
DM0 to DM3 (input pin)
DM is the reference signals of the data input mask function. DM is sampled at the cross point of DQS and VREF.
When DM = high, the data input at the same timing are masked while the internal burst counter will be counting up.
Each DM pin corresponds to eight DQ pins, respectively (See DQS and DM Correspondence Table).
EO
DQ0 to DQ31 (input/output pins)
Data is input to and output from these pins.
DQS0 to DQS3 (input and output pin): DQS0 to DQS3 provide the read data strobes (as output) and the write
data strobes (as input). Each DQS pin corresponds to eight DQ pins, respectively (See DQS and DM
Correspondence Table).
[DQS and DM Correspondence Table]
DQS0
DQS1
DQS2
DQS3
Data mask
DQs
DM0
DQ0 to DQ7
DM1
DQ8 to DQ15
DM2
DQ16 to DQ23
DM3
DQ24 to DQ31
L
DQS
Pr
VDD, VSS, VDDQ, VSSQ (Power supply)
VDD and VSS are power supply pins for internal circuits. VDDQ and VSSQ are power supply pins for the output
buffers.
t
uc
od
Preliminary Data Sheet E1550E10 (Ver. 1.0)
13
EDD1232ACBH-6B
Command Operation
Command Truth Table
DDR SDRAM recognize the following commands specified by the /CS, /RAS, /CAS, /WE and address pins. All other
combinations than those in the table below are illegal.
CKE
Command
Symbol
n–1
n
/CS
/RAS /CAS /WE
BA1
BA0
AP
Address
Ignore command
DESL
H
H
H
×
×
×
×
×
×
×
No operation
NOP
H
H
L
H
H
H
×
×
×
×
Burst stop in read command
BST
H
H
L
H
H
L
×
×
×
×
Column address and read command
READ
H
H
L
H
L
H
V
V
L
V
READA
H
H
L
H
L
H
V
V
H
V
Column address and write command
WRIT
H
H
L
H
L
L
V
V
L
V
Write with auto-precharge
WRITA
H
H
L
H
L
L
V
V
H
V
Row address strobe and bank active
ACT
H
H
L
L
H
H
V
V
V
V
Precharge select bank
PRE
H
H
L
L
H
L
V
V
L
×
Precharge all bank
PALL
H
H
L
L
H
L
×
×
H
×
Refresh
REF
H
H
L
L
L
H
×
×
×
×
SELF
H
L
L
L
L
H
×
×
×
×
EO
Read with auto-precharge
MRS
H
H
L
L
L
L
L
L
V
V
EMRS
H
H
L
L
L
L
L
H
L
V
L
Mode register set
Remark: H: VIH. L: VIL. ×: VIH or VIL V: Valid address input
Note: The CKE level must be kept for 1 CK cycle at least.
Pr
Ignore command [DESL]
When /CS is high at the cross point of the CK rising edge and the VREF level, every input are neglected and internal
status is held.
od
No operation [NOP]
As long as this command is input at the cross point of the CK rising edge and the VREF level, address and data
input are neglected and internal status is held.
Burst stop in read operation [BST]
This command stops a burst read operation, which is not applicable for a burst write operation.
uc
Column address strobe and read command [READ]
This command starts a read operation. The start address of the burst read is determined by the column address
(See “Address Pins Table” in Pin Function) and the bank select address. After the completion of the read operation,
the output buffer becomes High-Z.
Read with auto-precharge [READA]
This command starts a read operation. After completion of the read operation, precharge is automatically executed.
t
Column address strobe and write command [WRIT]
This command starts a write operation. The start address of the burst write is determined by the column address
(See “Address Pins Table” in Pin Function) and the bank select address.
Write with auto-precharge [WRITA]
This command starts a write operation. After completion of the write operation, precharge is automatically executed.
Preliminary Data Sheet E1550E10 (Ver. 1.0)
14
EDD1232ACBH-6B
Row address strobe and bank activate [ACT]
This command activates the bank that is selected by BA0, BA1 and determines the row address (AX0 to AX11).
(See Bank Select Signal Table)
Precharge selected bank [PRE]
This command starts precharge operation for the bank selected by BA0, BA1. (See Bank Select Signal Table)
[Bank Select Signal Table]
BA0
BA1
Bank 0
L
L
Bank 1
H
L
Bank 2
L
H
Bank 3
H
H
EO
Remark: H: VIH. L: VIL.
Precharge all banks [PALL]
This command starts a precharge operation for all banks.
Refresh [REF/SELF]
This command starts a refresh operation. There are two types of refresh operation, one is auto-refresh, and another
is self-refresh. For details, refer to the CKE truth table section.
L
Mode register set/Extended mode register set [MRS/EMRS]
The DDR SDRAM has the two mode registers, the mode register and the extended mode register, to defines how it
works. The both mode registers are set through the address pins (the A0 to the A11, BA0 to BA1) in the mode
register set cycle. For details, refer to "Mode register and extended mode register set".
Pr
CKE Truth Table
CKE
Current state
Command
n
/CS
/RAS
/CAS
/WE
Address
Notes
Idle
Idle
Auto-refresh command (REF)
H
H
L
L
L
H
×
2
Self-refresh entry (SELF)
H
L
L
L
L
H
×
2
Idle
Power down entry (PDEN)
H
L
L
H
H
H
×
H
L
H
×
×
×
×
Self refresh
Self refresh exit (SELFX)
L
H
L
H
H
H
×
L
H
H
×
×
×
×
L
H
L
H
H
H
×
L
H
H
×
×
×
×
Power down
Power down exit (PDEX)
Remark: H: VIH. L: VIL. ×: VIH or VIL.
Notes: 1. All the banks must be in IDLE before executing this command.
2. The CKE level must be kept for 1 CK cycle at least.
t
uc
od
n–1
Preliminary Data Sheet E1550E10 (Ver. 1.0)
15
EDD1232ACBH-6B
Function Truth Table
The following tables show the operations that are performed when each command is issued in each state of the
DDR SDRAM.
Current state
Precharging*
1
/CS
/RAS /CAS
/WE
H
×
×
×
L
H
H
H
L
H
2
L
DESL
NOP
ldle
NOP
NOP
×
BST
ldle
ILLEGAL*
11
—
—
H
L
H
BA, CA, A8
READ/READA
ILLEGAL*
L
L
BA, CA, A8
WRIT/WRITA
ILLEGAL*
11
—
11
—
L
L
H
H
BA, RA
ACT
ILLEGAL*
L
L
H
L
L
L
L
BA, A8
PRE, PALL
NOP
ldle
×
×
ILLEGAL
—
H
×
×
×
×
DESL
NOP
ldle
L
H
H
H
×
NOP
NOP
L
H
H
L
×
BST
ILLEGAL*
11
—
L
H
L
H
BA, CA, A8
READ/READA
ILLEGAL*
11
—
11
ldle
L
H
L
L
BA, CA, A8
WRIT/WRITA
ILLEGAL*
L
L
H
H
BA, RA
ACT
Activating
Active
BA, A8
PRE, PALL
NOP
ldle
ldle/
Self refresh
L
H
L
—
L
L
L
H
×
REF, SELF
Refresh/
12
Self refresh*
L
L
L
L
MODE
MRS
Mode register set*
H
×
×
×
×
DESL
NOP
ldle
L
H
H
L
H
L
H
L
Pr
12
ldle
H
×
NOP
NOP
ldle
H
L
×
BST
ILLEGAL
—
L
×
×
ILLEGAL
—
L
×
×
×
ILLEGAL
—
H
×
×
×
×
DESL
NOP
Active
L
H
H
H
×
NOP
NOP
Active
L
H
H
L
×
BST
ILLEGAL*
11
—
—
od
L
H
L
H
BA, CA, A8
READ/READA
ILLEGAL*
11
L
H
L
L
BA, CA, A8
WRIT/WRITA
ILLEGAL*
11
—
ILLEGAL*
11
—
ILLEGAL*
11
L
H
H
BA, RA
ACT
L
L
H
L
BA, A8
L
L
L
×
×
PRE, PALL
H
×
×
×
×
DESL
L
H
H
H
×
NOP
L
H
H
L
×
BST
L
H
L
H
BA, CA, A8
READ/READA
L
H
L
L
BA, CA, A8
WRIT/WRITA
L
L
H
H
BA, RA
ACT
ILLEGAL*
L
L
H
L
BA, A8
PRE, PALL
Pre-charge
L
L
L
×
×
—
NOP
Active
NOP
Active
ILLEGAL
Active
Starting read operation Read/READA
16
11
t
Write
Starting write operation recovering/
precharging
ILLEGAL
Preliminary Data Sheet E1550E10 (Ver. 1.0)
—
ILLEGAL
uc
5
×
×
H
L
Active*
Next state
L
L
Activating*
4
Operation
L
L
Refresh
3
(auto-refresh)*
Command
11
EO
Idle*
H
Address
—
Idle
—
EDD1232ACBH-6B
Current state
Read*
6
/RAS /CAS
/WE
Address
Command
Operation
Next state
H
×
×
×
×
DESL
NOP
Active
L
H
H
H
×
NOP
NOP
Active
L
H
H
L
×
BST
BST
Active
L
H
L
H
BA, CA, A8
READ/READA
Interrupting burst read
operation to
start new read
Active
L
H
L
L
BA, CA, A8
WRIT/WRITA
ILLEGAL*
13
—
L
L
H
H
BA, RA
ACT
ILLEGAL*
11
—
L
L
H
L
BA, A8
PRE, PALL
Interrupting burst
read operation to
start pre-charge
Precharging
L
L
L
×
×
ILLEGAL
—
NOP
Precharging
EO
/CS
Read with auto-preH
7
charge*
×
×
×
×
DESL
L
H
H
H
×
NOP
NOP
Precharging
L
H
H
L
×
BST
ILLEGAL
—
L
H
L
H
BA, CA, A8
READ/READA
ILLEGAL*
14
—
—
L
H
L
L
BA, CA, A8
WRIT/WRITA
ILLEGAL*
14
L
L
H
H
BA, RA
ACT
ILLEGAL*
11, 14
—
ILLEGAL*
11, 14
—
L
L
PRE, PALL
L
L
L
×
×
H
×
×
×
×
DESL
NOP
L
H
H
H
×
NOP
NOP
L
H
H
L
×
BST
ILLEGAL
ILLEGAL
—
Write
recovering
Write
recovering
—
Interrupting burst write
operation to
start read operation.
Interrupting burst write
operation to
start new write
operation.
L
H
L
H
BA, CA, A8
READ/READA
L
H
L
L
BA, CA, A8
WRIT/WRITA
L
L
H
H
BA, RA
ACT
ILLEGAL*
PRE, PALL
Interrupting write
operation to start precharge.
Idle
ILLEGAL
—
NOP
Active
L
L
H
L
BA, A8
L
L
L
×
×
H
×
×
×
×
L
H
H
H
×
L
H
H
L
×
L
H
L
H
BA, CA, A8
READ/READA
L
H
L
L
BA, CA, A8
WRIT/WRITA
L
H
H
DESL
BA, RA
L
L
H
L
BA, A8
L
L
L
×
×
Read/ReadA
Write/WriteA
—
NOP
NOP
Active
BST
ILLEGAL
—
ACT
PRE/PALL
uc
L
11
od
9
BA, A8
Pr
Write recovering*
H
L
Write*
8
L
Starting read operation. Read/ReadA
Starting new write
operation.
ILLEGAL*
11
ILLEGAL*
11
ILLEGAL
Write/WriteA
—
—
—
t
Preliminary Data Sheet E1550E10 (Ver. 1.0)
17
EDD1232ACBH-6B
Current state
/CS
/RAS /CAS
/WE
Address
Command
Operation
Next state
Write with auto10
pre-charge*
H
×
×
×
×
DESL
NOP
Precharging
L
H
H
H
×
NOP
NOP
Precharging
L
H
H
L
×
BST
ILLEGAL
—
L
H
L
H
BA, CA, A8
READ/READA
ILLEGAL*
14
—
—
L
H
L
L
BA, CA, A8
WRIT/WRIT A
ILLEGAL*
14
L
L
H
H
BA, RA
ACT
ILLEGAL*
11, 14
—
ILLEGAL*
11, 14
—
L
L
H
L
BA, A8
L
L
L
×
×
PRE, PALL
ILLEGAL
—
H: VIH. L: VIL. ×: VIH or VIL
The DDR SDRAM is in "Precharging" state for tRP after precharge command is issued.
The DDR SDRAM reaches "IDLE" state tRP after precharge command is issued.
The DDR SDRAM is in "Refresh" state for tRFC after auto-refresh command is issued.
The DDR SDRAM is in "Activating" state for tRCDRD or tRCDWR after ACT command is issued.
The DDR SDRAM is in "Active" state after "Activating" is completed.
The DDR SDRAM is in "READ" state until burst data have been output and DQ output circuits are turned
off.
7. The DDR SDRAM is in "READ with auto-precharge" from READA command until burst data has been
output and DQ output circuits are turned off.
8. The DDR SDRAM is in "WRITE" state from WRIT command to the last burst data are input.
9. The DDR SDRAM is in "Write recovering" for tWR after the last data are input.
10. The DDR SDRAM is in "Write with auto-precharge" until tWR after the last data has been input.
11.
This command may be issued for other banks, depending on the state of the banks.
12. All banks must be in "IDLE".
13. Before executing a write command to stop the preceding burst read operation, BST command must be
issued.
14. The DDR SDRAM supports the concurrent auto-precharge feature, a read with auto-precharge enabled,or
a write with auto-precharge enabled, may be followed by any column command to other banks, as long as
that command does not interrupt the read or write data transfer, and all other related limitations apply.
(E.g. Conflict between READ data and WRITE data must be avoided.)
L
EO
Remark:
Notes: 1.
2.
3.
4.
5.
6.
Pr
From command
To command (different bank, noninterrupting command)
Read w/AP
Read or Read w/AP
Write or Write w/AP
Precharge or Activate
Read or Read w/AP
Minimum delay
(Concurrent AP supported)
Units
BL/2
tCK
CL(rounded up)+ (BL/2)
tCK
1
tCK
1 + (BL/2) + tWTR
tCK
Write or Write w/AP
BL/2
tCK
Precharge or Activate
1
uc
Write w/AP
od
The minimum delay from a read or write command with auto precharge enabled, to a command to a
different bank, is summarized below.
tCK
t
Preliminary Data Sheet E1550E10 (Ver. 1.0)
18
EDD1232ACBH-6B
Command Truth Table for CKE
Current State
CKE
n–1 n
Self refresh
Self refresh recovery
Notes
×
×
×
×
×
×
INVALID, CK (n-1) would exit self refresh
L
H
H
×
×
×
×
Self refresh recovery
L
H
L
H
H
×
×
Self refresh recovery
L
H
L
H
L
×
×
ILLEGAL
L
H
L
L
×
×
×
ILLEGAL
L
L
×
×
×
×
×
Maintain self refresh
H
H
H
×
×
×
×
Idle after tRC
H
H
L
H
H
×
×
Idle after tRC
H
H
L
H
L
×
×
ILLEGAL
H
H
L
L
×
×
×
ILLEGAL
H
L
H
×
×
×
×
ILLEGAL
H
L
L
H
H
×
×
ILLEGAL
H
L
L
H
L
×
×
ILLEGAL
H
L
L
L
×
×
×
ILLEGAL
EXIT power down → Idle
H
×
×
×
×
×
L
H
H
×
×
×
×
L
H
L
H
H
H
×
×
INVALID, CK (n – 1) would exit power down
L
L
×
×
×
×
H
H
H
×
×
×
Refer to operations in Function Truth Table
H
H
L
H
×
×
Refer to operations in Function Truth Table
H
H
L
L
H
×
H
H
L
L
L
H
×
H
H
L
L
L
L
OPCODE Refer to operations in Function Truth Table
H
L
H
×
×
×
Refer to operations in Function Truth Table
H
L
L
H
×
×
Refer to operations in Function Truth Table
H
L
L
L
H
×
Refer to operations in Function Truth Table
H
L
L
L
L
H
H
L
L
L
L
L
L
×
×
×
×
×
H
×
×
×
×
×
L
×
×
×
×
×
Maintain power down mode
Pr
Refer to operations in Function Truth Table
CBR (auto) refresh
od
Row active
Operation
L
All banks idle
/RAS /CAS /WE Address
H
EO
Power down
/CS
×
Self refresh
1
OPCODE Refer to operations in Function Truth Table
×
Power down
×
Refer to operations in Function Truth Table
×
Power down
1
1
t
uc
Remark: H: VIH. L: VIL. ×: VIH or VIL
Note: Self refresh can be entered only from the all banks idle state. Power down can be entered only from all
banks idle or row active state.
Preliminary Data Sheet E1550E10 (Ver. 1.0)
19
EDD1232ACBH-6B
Auto-refresh command [REF]
This command executes auto-refresh. The banks and the ROW addresses to be refreshed are internally determined
by the internal refresh controller. The average refresh cycle is 7.8 µs. The output buffer becomes High-Z after autorefresh start. Precharge has been completed automatically after the auto-refresh. The ACT or MRS command can
be issued tRFC after the last auto-refresh command.
Self-refresh entry [SELF]
This command starts self-refresh. The self-refresh operation continues as long as CKE is held Low. During the selfrefresh operation, all ROW addresses are repeated refreshing by the internal refresh controller. A self-refresh is
terminated by a self-refresh exit command.
EO
Power down mode entry [PDEN]
tPDEN (= 1 cycle) after the cycle when [PDEN] is issued. The DDR SDRAM enters into power-down mode. In
power down mode, power consumption is suppressed by deactivating the input initial circuit. Power down mode
continues while CKE is held Low. No internal refresh operation occurs during the power down mode. [PDEN] do not
disable DLL.
Self-refresh exit [SELFX]
This command is executed to exit from self-refresh mode. To issue non-read commands, tSNR has to be satisfied.
To issue read command, tSRD has to be satisfied to adjust DOUT timing by DLL. (200 cycles after [SELFX]) After
the exit, input auto-refresh command within 7.8µs.
L
Power down exit [PDEX]
The DDR SDRAM can exit from power down mode tPDEX after the cycle when [PDEX] is issued.
t
uc
od
Pr
Preliminary Data Sheet E1550E10 (Ver. 1.0)
20
EDD1232ACBH-6B
Simplified State Diagram
SELF
REFRESH
SR ENTRY
SR EXIT
MRS
MRS
EMRS
REFRESH
IDLE
*1
AUTO
REFRESH
CKE
CKE_
CKE_
CKE
ROW
ACTIVE
BST
WRITE
Write
READ
WRITE
WITH
AP
WRITE
L
EO
IDLE
POWER
DOWN
ACTIVE
ACTIVE
POWER
DOWN
WRITE
WITH AP
READ
WITH
AP
READ
READ
READ
WITH AP
READ
WITH AP
PRECHARGE
WRITEA
READA
PRECHARGE
PRECHARGE
Pr
POWER
APPLIED
Read
POWER
ON
PRECHARGE
PRECHARGE
od
Automatic transition after completion of command.
Transition resulting from command input.
Note: 1. After the auto-refresh operation, precharge operation is performed automatically
and enter the IDLE state.
t
uc
Preliminary Data Sheet E1550E10 (Ver. 1.0)
21
EDD1232ACBH-6B
Operation of the DDR SDRAM
Power-up Sequence
EO
(1) Apply power and maintain CKE at an LVCMOS low state (all other inputs are undefined).
Apply VDD before or at the same time as VDDQ.
Apply VDDQ before or at the same time as VTT and VREF.
(2) Start clock and maintain stable condition for a minimum of 200µs.
(3) After the minimum 200µs of stable power and clock (CK, /CK), apply NOP and take CKE high.
(4) Issue precharge all command for the device.
(5) Issue EMRS to enable DLL.
(6) Issue a mode register set command (MRS) for "DLL reset" with bit A8 set to high (An additional 200 cycles of
clock input is required to lock the DLL after every DLL reset).
(7) Issue precharge all command for the device.
(8) Issue 2 or more auto-refresh commands.
(9) Issue a mode register set command to initialize device operation with bit A8 set to low in order to avoid resetting
the DLL.
(4)
(5)
PALL
EMRS
(6)
(7)
MRS
PALL
(8)
(9)
CK
/CK
L
Command
2 cycles (min.)
tRP
2 cycles (min.) 2 cycles (min.)
DLL enable
REF
REF
REF
Any
command
MRS
tRFC
tRFC
DLL reset with A8 = High
2 cycles (min.)
Disable DLL reset with A8 = Low
200 cycles (min)
Power-up Sequence after CKE Goes High
Pr
Mode Register and Extended Mode Register Set
BA0
BA1 A11 A10 A9
0
0
0
0
0
A8
A7
DR
0
A6
0
1
1
A4
LMODE
A8 DLL Reset A6 A5 A4 CAS Latency
1 1 0
2.5
0 No
1 Yes
A5
3
A3
A2
BT
A3 Burst Type
0 Sequential
1 Interleave
A2 A1 A0
Burst Length
BT=0 BT=1
2
2
0
0
1
0
1
0
4
4
0
1
1
8
8
t
22
A0
BL
Mode Register Set [MRS] (BA0 = 0, BA1 = 0)
Preliminary Data Sheet E1550E10 (Ver. 1.0)
A1
uc
MRS
od
There are two mode registers, the mode register and the extended mode register so as to define the operating
mode. Parameters are set to both through the A0 to the A11 and BA0, BA1 pins by the mode register set command
[MRS] or the extended mode register set command [EMRS]. The mode register and the extended mode register are
set by inputting signal via the A0 to the A11 and BA0, BA1 during mode register set cycles. BA0 and BA1 determine
which one of the mode register or the extended mode register are set. Prior to a read or a write operation, the mode
register must be set.
Remind that no other parameters shown in the table bellow are allowed to input to the registers.
EDD1232ACBH-6B
BA0
BA1 A11 A10 A9
0
1
0
0
0
A8
A7
A6
A5
A4
A3
A2
A1
A0
0
0
DS
0
0
0
0
DS
DLL
EMRS
A6 A1 Driver Strength
A0 DLL Control
0
1 Weak
0 DLL Enable
1
1 Matched
1 DLL Disable
Extended Mode Register Set [EMRS] (BA0 = 1, BA1 = 0)
Burst Operation
EO
The burst type (BT) and the first three bits of the column address determine the order of a data out.
Burst length = 2
Burst length = 4
Starting Ad. Addressing(decimal)
A0
Sequence
Starting Ad. Addressing(decimal)
Interleave
A1
A0
0
0, 1,
0, 1,
0
0
0, 1, 2, 3,
0, 1, 2, 3,
1
1, 0,
1, 0,
0
1
1, 2, 3, 0,
1, 0, 3, 2,
1
0
2, 3, 0, 1,
2, 3, 0, 1,
1
1
3, 0, 1, 2,
3, 2, 1, 0,
Sequence
Interleave
L
Burst length = 8
Addressing(decimal)
Starting Ad.
A1
0
0
A0 Sequence
0
0, 1, 2, 3, 4, 5, 6, 7,
Interleave
0, 1, 2, 3, 4, 5, 6, 7,
0
0
1
1, 2, 3, 4, 5, 6, 7, 0,
1, 0, 3, 2, 5, 4, 7, 6,
0
1
0
2, 3, 4, 5, 6, 7, 0, 1,
2, 3, 0, 1, 6, 7, 4, 5,
0
1
1
3, 4, 5, 6, 7, 0, 1, 2,
3, 2, 1, 0, 7, 6, 5, 4,
1
0
0
4, 5, 6, 7, 0, 1, 2, 3,
4, 5, 6, 7, 0, 1, 2, 3,
1
0
1
5, 6, 7, 0, 1, 2, 3, 4,
5, 4, 7, 6, 1, 0, 3, 2,
1
1
0
6, 7, 0, 1, 2, 3, 4, 5,
6, 7, 4, 5, 2, 3, 0, 1,
1
1
1
7, 0, 1, 2, 3, 4, 5, 6,
7, 6, 5, 4, 3, 2, 1, 0,
t
uc
od
Pr
A2
Preliminary Data Sheet E1550E10 (Ver. 1.0)
23
EDD1232ACBH-6B
Read/Write Operations
Bank active
A read or a write operation begins with the bank active command [ACT]. The bank active command determines a
bank address and a row address. For the bank and the row, a read or a write command can be issued tRCDRD or
tRCDWR after the ACT is issued.
EO
Read operation
The burst length (BL), the /CAS latency (CL) and the burst type (BT) of the mode register are referred when a read
command is issued. The burst length (BL) determines the length of a sequential output data by the read command
that can be set to 2, 4, or 8. The starting address of the burst read is defined by the column address, the bank select
address which are loaded via the A0 to A11 and BA0, BA1 pins in the cycle when the read command is issued. The
data output timing are characterized by CL and tAC. The read burst start CL • tCK + tAC (ns) after the clock rising
edge where the read command are latched. The DDR SDRAM output the data strobe through DQS simultaneously
with data. tRPRE prior to the first rising edge of the data strobe, the DQS are driven Low from VTT level. This low
period of DQS is referred as read preamble. The burst data are output coincidentally at both the rising and falling
edge of the data strobe. The DQ pins become High-Z in the next cycle after the burst read operation completed.
tRPST from the last falling edge of the data strobe, the DQS pins become High-Z. This low period of DQS is
referred as read postamble.
t0
t1
t2
t3
t4
t5
t5.5
t6
t7
t8
t9
CK
/CK
Address
L
Command
tRCDRD
NOP
ACT
NOP
Row
READ
NOP
Column
tRPRE
Pr
BL = 2
DQS
DQ
BL = 4
tRPST
out0 out1 out2 out3
od
BL = 8
out0 out1
out0 out1 out2 out3 out4 out5 out6 out7
CL = 2.5
BL: Burst length
Read Operation (Burst Length)
t
uc
Preliminary Data Sheet E1550E10 (Ver. 1.0)
24
EDD1232ACBH-6B
t0
t0.5
t1
t1.5
t2
t2.5
t3
t3.5
t4
t4.5
t5
t5.5
CK
/CK
Command
READ
NOP
tRPRE
tRPST
VTT
DQS
CL = 2.5
tAC,tDQSCK
out0
DQ
out1
out2
VTT
out3
EO
tRPRE
tRPST
VTT
DQS
CL = 3
tAC,tDQSCK
out0
DQ
out1
out2
VTT
out3
Read Operation (/CAS Latency)
L
Write operation
The burst length (BL) and the burst type (BT) of the mode register are referred when a write command is issued.
The burst length (BL) determines the length of a sequential data input by the write command that can be set to 2, 4,
or 8. The latency from write command to data input is fixed to 1. The starting address of the burst write is defined
by the column address, the bank select address which are loaded via the A0 to A11, BA0 to BA1 pins in the cycle
when the write command is issued. DQS should be input as the strobe for the input-data and DM as well during
burst operation. tWPREH prior to the first rising edge of the DQS should be set to Low and tWPST after the last
falling edge of the data strobe can be set to High-Z. The leading low period of DQS is referred as write preamble.
The last low period of DQS is referred as write postamble.
Pr
t0
t1
CK
/CK
Address
t5
t6
t7
t8
t9
tRCDWR
NOP
ACT
NOP
Row
WRITE
Column
od
Command
t4.5
t4
NOP
tWPREH
tWPRES
BL = 2
BL = 4
tWPST
in0
in1
in2
in3
in0
in1
in2
in3
in4
in5
in6
in7
t
BL = 8
in1
uc
DQS
DQ
in0
BL: Burst length
Write Operation
Preliminary Data Sheet E1550E10 (Ver. 1.0)
25
EDD1232ACBH-6B
Burst Stop
Burst Stop Command during Burst Read
The burst stop (BST) command is used to stop data output during a burst read. The BST command stops the burst
read and sets the output buffer to High-Z. tBSTZ (= CL) cycles after a BST command issued, the DQ pins become
High-Z. The BST command is not supported for the burst write operation. Note that bank address is not referred
when this command is executed.
t0
t0.5
t1
t1.5
t2
t2.5
t3
t3.5
t4
t4.5
t5
t5.5
CK
/CK
EO
Command
READ
BST
NOP
tBSTZ
2.5 cycles
DQS
CL = 2.5
out0
DQ
out1
tBSTZ
L
3 cycles
DQS
CL = 3
out0
DQ
out1
Pr
CL: /CAS latency
Burst Stop during a Read Operation
t
uc
od
Preliminary Data Sheet E1550E10 (Ver. 1.0)
26
EDD1232ACBH-6B
Auto Precharge
Read with Auto Precharge
The precharge is automatically performed after completing a read operation. The precharge starts tRPD (BL/2)
cycle after READA command input. tRAP specification for READA allows a read command with auto precharge to be
issued to a bank that has been activated (opened) but has not yet satisfied the tRAS (min) specification. A column
command to the other active bank can be issued the next cycle after the last data output. Read with auto-precharge
command does not limit row commands execution for other bank. Refer to ‘Function truth table and related
note(Notes.*14).
CK
/CK
tRAP (min) = tRCDRD (min)
EO
Command
ACT
tRP (min)
tRPD
2 cycles (= BL/2)
ACT
NOP
READA
DQS
tAC,tDQSCK
DQ
out0
L
Note: Internal auto-precharge starts at the timing indicated by "
out1
out2
out3
".
Read with auto-precharge
CK
/CK
tRAS (min)
tRCDWR (min)
Command
ACT
NOP
NOP
WRITA
1 + BL/2 + tWR cycles
DM
DQS
DQ
in1
in2
in3
".
Burst Write (BL = 4)
Preliminary Data Sheet E1550E10 (Ver. 1.0)
27
ACT
t
Note: Internal auto-precharge starts at the timing indicated by "
in4
tRP
uc
od
Pr
Write with Auto Precharge
The precharge is automatically performed after completing a burst write operation. The precharge operation is
started (1 + BL/ 2 + tWR) cycles after WRITA command issued. A column command to the other banks can be
issued the next cycle after the internal precharge command issued. Write with auto-precharge command does not
limit row commands execution for other bank. Refer to the ‘Read with Auto-Precharge Enabled, Write with AutoPrecharge Enabled’ section. Refer to ‘Function truth table and related note (Notes.*14).
BL = 4
EDD1232ACBH-6B
Command Intervals
A Read Command to the Consecutive Read Command Interval
Destination row of the
consecutive read command
Bank
address
Row address State
1.
Same
Same
ACTIVE
2.
Same
Different
—
3.
Different
Any
ACTIVE
Operation
EO
The consecutive read can be performed after an interval of no less than 1 cycle to
interrupt the preceding read operation.
Precharge the bank to interrupt the preceding read operation. tRP after the
precharge command, issue the ACT command. tRCDRD after the ACT command,
the consecutive read command can be issued. See ‘A read command to the
consecutive precharge interval’ section.
The consecutive read can be performed after an interval of no less than 1 cycle to
interrupt the preceding read operation.
Precharge the bank without interrupting the preceding read operation. tRP after
the precharge command, issue the ACT command. tRCDRD after the ACT
command, the consecutive read command can be issued.
IDLE
t0
t3
t4
READ
READ
t5
t6
t7
t8
t9
CK
/CK
Address
ACT
NOP
L
Command
Row
NOP
Column A Column B
BA
Pr
out out
A0 A1
DQ
Column = A Column = B
Read
Read
Bank0
Active
Column = A
Dout
out
B1
out
B2
out
B3
Column = B
Dout
od
DQS
out
B0
CL = 2.5
BL = 4
Bank0
READ to READ Command Interval (same ROW address in the same bank)
t
uc
Preliminary Data Sheet E1550E10 (Ver. 1.0)
28
EDD1232ACBH-6B
t0
t1
t2
t3
t4
t5
ACT
NOP
ACT
NOP
READ
READ
t6
t7
t8
t9
CK
/CK
Command
Address
Row0
Row1
NOP
Column A Column B
BA
out out
A0 A1
DQ
EO
Column = A
Read
Column = B
Read
Bank0
Dout
out out out out
B0 B1 B2 B3
Bank3
Dout
DQS
Bank0
Active
Bank3
Active
Bank0
Read
CL = 2.5
BL = 4
Bank3
Read
READ to READ Command Interval (different bank)
L
t
uc
od
Pr
Preliminary Data Sheet E1550E10 (Ver. 1.0)
29
;;;;;
EDD1232ACBH-6B
A Write Command to the Consecutive Write Command Interval
Destination row of the consecutive write
command
Bank
address
1.
Same
2.
Same
3.
Different
Row address State
Operation
Same
ACTIVE
Different
—
Any
ACTIVE
EO
IDLE
t0
CK
/CK
Command
BA
NOP
WRIT
tn+1
tn+2
tn+4
tn+5
tn+6
NOP
WRIT
Column A Column B
inA0 inA1 inB0 inB1 inB2 inB3
Column = A
Write
DQS
tn+3
Pr
DQ
Row
tn
L
Address
ACT
The consecutive write can be performed after an interval of no less than 1 cycle to
interrupt the preceding write operation.
Precharge the bank to interrupt the preceding write operation. tRP after the
precharge command, issue the ACT command. tRCDWR after the ACT command,
the consecutive write command can be issued. See ‘A write command to the
consecutive precharge interval’ section.
The consecutive write can be performed after an interval of no less than 1 cycle to
interrupt the preceding write operation.
Precharge the bank without interrupting the preceding write operation. tRP after
the precharge command, issue the ACT command. tRCDWR after the ACT
command, the consecutive write command can be issued.
Bank0
Active
Column = B
Write
od
BL = 4
Bank0
WRITE to WRITE Command Interval (same ROW address in the same bank)
t
uc
Preliminary Data Sheet E1550E10 (Ver. 1.0)
30
;;; ;;;
EDD1232ACBH-6B
CK
/CK
Command
Address
BA
DQ
t0
t1
t2
ACT
NOP
ACT
Row0
NOP
WRIT
tn+1
tn+2
tn+3
tn+4
tn+5
NOP
WRIT
Column A Column B
inA0 inA1 inB0 inB1 inB2 inB3
EO
DQS
Row1
tn
Bank0
Active
Bank0
Write
Bank3
Write
Bank3
Active
BL = 4
Bank0, 3
WRITE to WRITE Command Interval (different bank)
L
t
uc
od
Pr
Preliminary Data Sheet E1550E10 (Ver. 1.0)
31
EDD1232ACBH-6B
A Read Command to the Consecutive Write Command Interval with the BST Command
Destination row of the consecutive write
command
Bank
address
Row address State
1.
Same
Same
ACTIVE
2.
Same
Different
—
3.
Different
Any
ACTIVE
Operation
EO
Issue the BST command. tBSTW (≥ tBSTZ) after the BST command, the
consecutive write command can be issued.
Precharge the bank to interrupt the preceding read operation. tRP after the
precharge command, issue the ACT command. tRCDWR after the ACT command,
the consecutive write command can be issued. See ‘A read command to the
consecutive precharge interval’ section.
Issue the BST command. tBSTW (≥ tBSTZ) after the BST command, the
consecutive write command can be issued.
Precharge the bank independently of the preceding read operation. tRP after the
precharge command, issue the ACT command. tRCDWR after the ACT command,
the consecutive write command can be issued.
IDLE
t0
t1
READ
BST
t2
t3
t4
t5
t6
t7
t8
CK
/CK
Command
WRIT
NOP
NOP
L
tBSTW (≥ tBSTZ)
DM
tBSTZ (= CL)
out0 out1
High-Z
DQS
Pr
DQ
in0
in1
in3
INPUT
od
OUTPUT
in2
BL = 4
CL = 2.5
READ to WRITE Command Interval
t
uc
Preliminary Data Sheet E1550E10 (Ver. 1.0)
32
EDD1232ACBH-6B
A Write Command to the Consecutive Read Command Interval: To Complete the Burst Operation
Destination row of the consecutive read
command
Bank
address
Row address State
1.
Same
Same
ACTIVE
2.
Same
Different
—
3.
Different
Any
ACTIVE
EO
t0
Operation
To complete the burst operation, the consecutive read command should be
performed tWRD (=1 + BL/2 + tWTR) after the write command.
Precharge the bank tWPD after the preceding write command. tRP after the
precharge command, issue the ACT command. tRCDRD after the ACT command,
the consecutive read command can be issued. See ‘A read command to the
consecutive precharge interval’ section.
To complete a burst operation, the consecutive read command should be
performed tWRD (=1 + BL/2 + tWTR) after the write command.
Precharge the bank independently of the preceding write operation. tRP after the
precharge command, issue the ACT command. tRCDRD after the ACT command,
the consecutive read command can be issued.
IDLE
t1
t2
t3
t4
t5
t6
t7
t8
t9
CK
/CK
Command
WRIT
NOP
READ
NOP
L
tWRD (min)
1 + BL/2 + tWTR cycle
DM
DQS
in0
Pr
DQ
tWTR*
in1
in2
out0
in3
INPUT
out1
out2
OUTPUT
od
Note: tWTR is referenced from the first positive CK edge after the last desired data in pair tWTR.
BL = 4
CL = 2.5
WRITE to READ Command Interval
t
uc
Preliminary Data Sheet E1550E10 (Ver. 1.0)
33
EDD1232ACBH-6B
A Write Command to the Consecutive Read Command Interval: To Interrupt the Write Operation
Destination row of the consecutive read
command
Bank
address
Row address State
Operation
1.
Same
Same
ACTIVE
DM must be input 1 cycle prior to the read command input to prevent from being
written invalid data. In case, the read command is input in the next cycle of the
write command, DM is not necessary.
2.
Same
Different
—
—*
3.
Different
Any
ACTIVE
DM must be input 1 cycle prior to the read command input to prevent from being
written invalid data. In case, the read command is input in the next cycle of the
write command, DM is not necessary.
IDLE
—*
1
1
EO
Note: 1. Precharge must be preceded to read command. Therefore read command can not interrupt the write
operation in this case.
WRITE to READ Command Interval (Same bank, same ROW address)
t0
t1
t2
t3
t4
t5
t6
t7
t8
CK
/CK
L
Command
WRIT
READ
1 cycle
NOP
CL=2.5
DM
DQS
in0
Pr
DQ
in1
in2
High-Z
High-Z
od
Data masked
out0 out1 out2 out3
BL = 4
CL = 2.5
[WRITE to READ delay = 1 clock cycle]
t
uc
Preliminary Data Sheet E1550E10 (Ver. 1.0)
34
EDD1232ACBH-6B
t0
t1
t2
WRIT
NOP
READ
t3
t4
t5
t6
t7
t8
CK
/CK
Command
NOP
2 cycle
CL=2.5
DM
in0
EO
DQ
in1
in2
out0 out1 out2 out3
in3
High-Z
DQS
CK
/CK
BL = 4
CL= 2.5
[WRITE to READ delay = 2 clock cycle]
t1
WRIT
t2
t3
NOP
t4
t5
t6
READ
4 cycle
t7
t8
t9
NOP
Pr
Command
Data masked
L
t0
High-Z
CL=2.5
tWTR*
DM
in0
in1
in2
in3
DQS
Data masked
out0 out1 out2 out3
od
DQ
BL = 4
CL = 2.5
Note: tWTR is referenced from the first positive CK edge after the last desired data in pair tWTR.
t
uc
[WRITE to READ delay = 4 clock cycle]
Preliminary Data Sheet E1550E10 (Ver. 1.0)
35
EDD1232ACBH-6B
A Read Command to the Consecutive Precharge Command Interval (same bank): To Output All Data
To complete a burst read operation and get a burst length of data, the consecutive precharge command must be
issued tRPD (= BL/ 2 cycles) after the read command is issued.
t0
t1
t2
t3
NOP
READ
NOP
PRE/
PALL
t4
t5
t6
t7
t8
CK
/CK
Command
DQ
NOP
out0 out1 out2 out3
DQS
EO
tRPD = BL/2
READ to PRECHARGE Command Interval (same bank): To output all data (CL = 2.5, BL = 4)
t0
t1
t2
t3
NOP
READ
NOP
PRE/
PALL
t4
t5
t6
t7
t8
CK
/CK
DQ
L
Command
NOP
out0 out1 out2 out3
DQS
Pr
tRPD = BL/2
READ to PRECHARGE Command Interval (same bank): To output all data (CL = 3, BL = 4)
t
uc
od
Preliminary Data Sheet E1550E10 (Ver. 1.0)
36
EDD1232ACBH-6B
READ to PRECHARGE Command Interval (same bank): To Stop Output Data
A burst data output can be interrupted with a precharge command. All DQ pins and DQS pins become High-Z tHZP
(= CL) after the precharge command.
t0
t1
t2
t3
t4
READ
PRE/PALL
t5
t6
t7
t8
CK
/CK
Command
NOP
NOP
CL = 2.5
High-Z
DQ
out0 out1
High-Z
DQS
EO
tHZP
READ to PRECHARGE Command Interval (same bank): To stop output data (CL = 2.5, BL = 2, 4, 8)
t0
t1
t2
t3
t4
t5
t6
t7
t8
CK
/CK
DQ
NOP
READ
PRE/PALL
NOP
CL = 3
High-Z
out0 out1
High-Z
Pr
DQS
L
Command
tHZP
READ to PRECHARGE Command Interval (same bank): To stop output data (CL = 3, BL = 2, 4, 8)
t
uc
od
Preliminary Data Sheet E1550E10 (Ver. 1.0)
37
;;;;;;;
;; ;
EDD1232ACBH-6B
A Write Command to the Consecutive Precharge Command Interval (same bank)
The minimum interval tWPD cycles is necessary between the write command and the precharge command.
t0
t1
t2
t3
t4
t5
t6
t7
CK
/CK
Command
WRIT
PRE/PALL
NOP
NOP
tWPD
tWR
EO
DM
DQS
DQ
in0
in1
in2
in3
Last data input
L
WRITE to PRECHARGE Command Interval (same bank) (BL = 4)
t0
CK
/CK
Command
t1
t2
t3
t4
NOP
t5
PRE/PALL
od
WRIT
Pr
Precharge Termination in Write Cycles
During a burst write cycle without auto precharge, the burst write operation is terminated by a precharge command
of the same bank. In order to write the last input data, tWR (min) must be satisfied. When the precharge command
is issued, the invalid data must be masked by DM.
t6
t7
NOP
tWR
DM
DQ
in0
in1
in2
uc
DQS
in3
Data masked
Precharge Termination in Write Cycles (same bank) (BL = 4)
t
Preliminary Data Sheet E1550E10 (Ver. 1.0)
38
EDD1232ACBH-6B
Bank Active Command Interval
Destination row of the consecutive ACT
command
Bank
address
Row address
State
1.
Same
Any
ACTIVE
2.
Different
Any
ACTIVE
Operation
Two successive ACT commands can be issued at tRC interval. In between two
successive ACT operations, precharge command should be executed.
Precharge the bank. tRP after the precharge command, the consecutive ACT
command can be issued.
IDLE
tRRD after an ACT command, the next ACT command can be issued.
EO
CK
/CK
Command
Address
ACT
ROW: 0
ROW: 1
L
BA
ACTV
ACT
Bank0
Active
tRRD
PRE
NOP
NOP
ACT
NOP
ROW: 0
Bank3
Active
Bank0
Precharge
Bank0
Active
tRC
Pr
Bank Active to Bank Active
Mode Register Set to Bank-Active Command Interval
The interval between setting the mode register and executing a bank-active command must be no less than tMRD.
CK
Command
MRS
Address
CODE
Mode Register Set
od
/CK
NOP
ACT
NOP
BS and ROW
t
uc
tMRD
Bank3
Active
Preliminary Data Sheet E1550E10 (Ver. 1.0)
39
EDD1232ACBH-6B
DM Control
DM can mask input data. By setting DM to Low, data can be written. When DM is set to high, the corresponding
data is not written, and the previous data is held. The latency between DM input and enabling/disabling mask
function is 0.
t1
t2
t3
t4
t5
t6
DQS
DQ
Mask
Mask
EO
DM
Write mask latency = 0
DM Control
L
t
uc
od
Pr
Preliminary Data Sheet E1550E10 (Ver. 1.0)
40
EDD1232ACBH-6B
Refresh Requirements
The 128M (X32) DDR SDRAM requires a refresh of all rows in any rolling 32ms interval. Each refresh is generated
in one of two ways: by an explicit automatic refresh command, or by an internally timed event in self-refresh mode.
Dividing the number of device rows into the rolling 32ms interval defines the average refresh interval, tREFI, which is
a guideline to controllers for distributed refresh timing.
Auto-Refresh
EO
When /CS, /RAS and /CAS are held low and /WE high at the rising edge of the clock, the chip enters the automatic
refresh mode (REF). All banks of the 128M (X32) DDR SDRAM must be precharged and idle for a minimum of the
precharge time (tRP) before the auto refresh command (REF) can be applied. An address counter, internal to the
device, supplies the bank address during the refresh cycle. No control of the external address bus is required once
this cycle has started.
When the refresh cycle has completed, all banks will be in the precharged (idle) state. A delay between the auto
refresh command (REF) and the next activate command or subsequent auto refresh command must be greater than
or equal to the auto refresh cycle time (tRFC).
To allow for improved efficiency in scheduling and switching between tasks, some flexibility in the absolute refresh
interval is provided. A maximum of 8 refresh commands can be posted to any given DDR SDRAM, meaning that the
maximum absolute interval between any refresh command and the next Refresh command is 9 × tREFI.
Burst refreshing or posting by the DRAM controller greater than 8 refresh cycles is not allowed.
t0
t1
t2
t3
/CK
CK
VIH
L
≥ tRP
CKE
Command
PRE
NOP
≥ tRFC
≥ tRFC
REF
NOP
REF
Any
Command
Auto-Refresh
t
uc
od
Pr
Preliminary Data Sheet E1550E10 (Ver. 1.0)
41
EDD1232ACBH-6B
Self-Refresh
EO
The self-refresh command can be used to retain data in the DDR SDRAM, even if the rest of the system is powered
down. When in the self-refresh mode, the DDR SDRAM retains data without external clocking. The self-refresh
command is initiated like an auto-refresh command except CKE is disabled (low). The DLL is automatically disabled
upon entering self-refresh, and is automatically enabled upon exiting self-refresh. Any time the DLL is enabled a
DLL reset must follow and 200 clock cycles should occur before a read command can be issued. Input signals
except CKE are “Don’t care” during self-refresh. Since CKE is an SSTL2 input, VREF must be maintained during
self-refresh.
The procedure for exiting self-refresh requires a sequence of commands. First, CK must be stable prior to CKE
going back high. Once CKE is high, the DDR SDRAM must have NOP commands issued for tSNR because time is
required for the completion of any internal refresh in progress. A simple algorithm for meeting both refresh and DLL
requirements is to apply NOPs for 200 clock cycles before applying any other command.
The use of self-refresh mode introduces the possibility that an internally timed event can be missed when CKE is
raised for exit from self-refresh mode. Upon exit from self-refresh an extra auto-refresh command is recommended.
t0
t1
t2
t3
t4
t5
t6
tm
tn
tCK
tCH tCL
/CK
CK
≥ tSNR*3
tRP*1
tIS
tIS
≥ tSRD*2
Command
L
CKE
tIS tIH
SELF
NOP
NOP
NOP
Valid
Pr
Notes: 1. Device must be in the “All banks idle” state prior to entering self-refresh mode.
2. tSRD is applied for a read or a read with autoprecharge command.
3. tSNR is applied for any command except a read or a read with autoprecharge command.
Self-Refresh
t
uc
od
Preliminary Data Sheet E1550E10 (Ver. 1.0)
42
;;;;;;
EDD1232ACBH-6B
Timing Waveforms
Command and Addresses Input Timing Definition
CK
/CK
tIS
Command
(/RAS, /CAS,
/WE, /CS)
tIH
VREF
tIS
tIH
VREF
Address
Read Timing Definition
EO
/CK
CK
DQS
tCL
tCH
tDQSCK
tDQSCK
tDQSCK
tDQSCK tRPST
tRPRE
tDQSQ
tLZ
L
DQ
(Dout)
tCK
tAC
tDQSQ
tQH
tAC
tAC
tQH
tHZ
tDQSQ
tDQSQ tQH
tQH
Write Timing Definition
tCK
tDQSS
DQS
tWPRES
Pr
/CK
CK
tWPREH
tDS
DM
tDS
tDQSL
tDH
tDH
tDSS
VREF
tDQSH
tWPST
od
DQ
(Din)
tDSH
tDSS
VREF
tDIPW
tDIPW
VREF
tDIPW
t
uc
Preliminary Data Sheet E1550E10 (Ver. 1.0)
43
EDD1232ACBH-6B
Read Cycle
tCK
tCH tCL
CK
/CK
tRC
VIH
CKE
tRAS
tRP
tRCDRD
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
/CS
/RAS
EO
/CAS
/WE
BA
L
A8
tIS tIH
Address
DQS
DQ (output)
High-Z
High-Z
Pr
DM
Bank 0
Read
tRPST
od
Bank 0
Active
tRPRE
Bank 0
Precharge
CL = 2
BL = 4
Bank0 Access
= VIH or VIL
t
uc
Preliminary Data Sheet E1550E10 (Ver. 1.0)
44
EDD1232ACBH-6B
Write Cycle
tCK
tCH
tCL
CK
/CK
tRC
VIH
CKE
tRAS
tRP
tRCDWR
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
/CS
/RAS
EO
/CAS
/WE
BA
L
A8
tIS tIH
Address
tIS tIH
tIS tIH
tDQSS
tDQSL
tWPST
Pr
DQS
(input)
tDQSH
tDS
tDS
DM
tDS
tDH
od
DQ (input)
tDH
tWR
tDH
Bank 0
Active
Bank 0
Write
Bank 0
Precharge
CL = 2
BL = 4
Bank0 Access
= VIH or VIL
t
uc
Preliminary Data Sheet E1550E10 (Ver. 1.0)
45
EDD1232ACBH-6B
Mode Register Set Cycle
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
/CK
CK
CKE
VIH
/CS
/RAS
/CAS
/WE
EO
BA
Address
code
C: b
R: b
code
valid
DM
High-Z
DQS
High-Z
b
L
DQ (output)
tRP
Mode
register
set
Precharge
If needed
/CK
CK
CKE
VIH
/CS
/RAS
/WE
BA
R:a
C:a
R:b
C:b
DM
DQS
C:b''
b’’
High-Z
b
tRWD
Bank 0
Active
CL = 2
BL = 4
= VIH or VIL
uc
a
DQ (output)
DQ (input)
Bank 3
Precharge
od
/CAS
Address
Bank 3
Read
Bank 3
Active
Pr
Read/Write Cycle
tMRD
tWRD
Bank 0 Bank 3
Read Active
Bank 3
Write
t
Bank 3
Read
Read cycle
CL = 2
BL = 4
=VIH or VIL
Preliminary Data Sheet E1550E10 (Ver. 1.0)
46
EDD1232ACBH-6B
Auto-Refresh Cycle
/CK
CK
CKE
VIH
/CS
/RAS
/CAS
/WE
EO
BA
Address
A8=1
R: b
C: b
DM
DQS
b
DQ (output)
L
DQ (input)
High-Z
tRP
Precharge
If needed
tRFC
Auto
Refresh
Bank 0
Active
Bank 0
Read
t
uc
od
Pr
CL = 2
BL = 4
= VIH or VIL
Preliminary Data Sheet E1550E10 (Ver. 1.0)
47
EDD1232ACBH-6B
Self-Refresh Cycle
/CK
CK
tIS
tIH
CKE
CKE = low
/CS
/RAS
/CAS
EO
/WE
BA
Address
A8=1
R: b
C: b
DM
DQ (output)
L
DQS
High-Z
DQ (input)
tSNR
tRP
Pr
Precharge
If needed
Self
refresh
entry
Self refresh
exit
tSRD
Bank 0
Active
Bank 0
Read
CL = 2.5
BL = 4
= VIH or VIL
t
uc
od
Preliminary Data Sheet E1550E10 (Ver. 1.0)
48
EDD1232ACBH-6B
Package Drawing
144-ball FBGA
Solder ball: Lead free (Sn-Ag-Cu)
Unit: mm
10.5 ± 0.10
0.20 S A
0.20 S B
0.20 S
1.20 max
S
L
EO
10.5 ± 0.10
INDEX MARK
0.10 S
0.35 ± 0.05
A
φ0.08 M S AB
0.40
od
8.80
0.80
Pr
B
144 − φ0.45 ± 0.05
INDEX MARK
0.40
0.80
uc
8.80
ECA-TS2-0260-01
t
Preliminary Data Sheet E1550E10 (Ver. 1.0)
49
EDD1232ACBH-6B
Recommended Soldering Conditions
Please consult with our sales offices for soldering conditions of the EDD1232ACBH.
Type of Surface Mount Device
EDD1232ACBH: 144-ball FBGA < Lead free (Sn-Ag-Cu) >
L
EO
t
uc
od
Pr
Preliminary Data Sheet E1550E10 (Ver. 1.0)
50
EDD1232ACBH-6B
NOTES FOR CMOS DEVICES
1
PRECAUTION AGAINST ESD FOR MOS DEVICES
EO
Exposing the MOS devices to a strong electric field can cause destruction of the gate
oxide and ultimately degrade the MOS devices operation. Steps must be taken to stop
generation of static electricity as much as possible, and quickly dissipate it, when once
it has occurred. Environmental control must be adequate. When it is dry, humidifier
should be used. It is recommended to avoid using insulators that easily build static
electricity. MOS devices must be stored and transported in an anti-static container,
static shielding bag or conductive material. All test and measurement tools including
work bench and floor should be grounded. The operator should be grounded using
wrist strap. MOS devices must not be touched with bare hands. Similar precautions
need to be taken for PW boards with semiconductor MOS devices on it.
2
HANDLING OF UNUSED INPUT PINS FOR CMOS DEVICES
3
L
No connection for CMOS devices input pins can be a cause of malfunction. If no
connection is provided to the input pins, it is possible that an internal input level may be
generated due to noise, etc., hence causing malfunction. CMOS devices behave
differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed
high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected
to VDD or GND with a resistor, if it is considered to have a possibility of being an output
pin. The unused pins must be handled in accordance with the related specifications.
STATUS BEFORE INITIALIZATION OF MOS DEVICES
Pr
Power-on does not necessarily define initial status of MOS devices. Production process
of MOS does not define the initial operation status of the device. Immediately after the
power source is turned ON, the MOS devices with reset function have not yet been
initialized. Hence, power-on does not guarantee output pin levels, I/O settings or
contents of registers. MOS devices are not initialized until the reset signal is received.
Reset operation must be executed immediately after power-on for MOS devices having
reset function.
CME0107
t
uc
od
Preliminary Data Sheet E1550E10 (Ver. 1.0)
51
EDD1232ACBH-6B
The information in this document is subject to change without notice. Before using this document, confirm that this is the latest version.
No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of Elpida Memory, Inc.
Elpida Memory, Inc. does not assume any liability for infringement of any intellectual property rights
(including but not limited to patents, copyrights, and circuit layout licenses) of Elpida Memory, Inc. or
third parties by or arising from the use of the products or information listed in this document. No license,
express, implied or otherwise, is granted under any patents, copyrights or other intellectual property
rights of Elpida Memory, Inc. or others.
Descriptions of circuits, software and other related information in this document are provided for
illustrative purposes in semiconductor product operation and application examples. The incorporation of
these circuits, software and information in the design of the customer's equipment shall be done under
the full responsibility of the customer. Elpida Memory, Inc. assumes no responsibility for any losses
incurred by customers or third parties arising from the use of these circuits, software and information.
EO
[Product applications]
Be aware that this product is for use in typical electronic equipment for general-purpose applications.
Elpida Memory, Inc. makes every attempt to ensure that its products are of high quality and reliability.
However, users are instructed to contact Elpida Memory's sales office before using the product in
aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment,
medical equipment for life support, or other such application in which especially high quality and
reliability is demanded or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury.
L
[Product usage]
Design your application so that the product is used within the ranges and conditions guaranteed by
Elpida Memory, Inc., including the maximum ratings, operating supply voltage range, heat radiation
characteristics, installation conditions and other related characteristics. Elpida Memory, Inc. bears no
responsibility for failure or damage when the product is used beyond the guaranteed ranges and
conditions. Even within the guaranteed ranges and conditions, consider normally foreseeable failure
rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so
that the equipment incorporating Elpida Memory, Inc. products does not cause bodily injury, fire or other
consequential damage due to the operation of the Elpida Memory, Inc. product.
[Usage environment]
Pr
Usage in environments with special characteristics as listed below was not considered in the design.
Accordingly, our company assumes no responsibility for loss of a customer or a third party when used in
environments with the special characteristics listed below.
od
Example:
1) Usage in liquids, including water, oils, chemicals and organic solvents.
2) Usage in exposure to direct sunlight or the outdoors, or in dusty places.
3) Usage involving exposure to significant amounts of corrosive gas, including sea air, CL 2 , H 2 S, NH 3 ,
SO 2 , and NO x .
4) Usage in environments with static electricity, or strong electromagnetic waves or radiation.
5) Usage in places where dew forms.
6) Usage in environments with mechanical vibration, impact, or stress.
7) Usage near heating elements, igniters, or flammable items.
uc
If you export the products or technology described in this document that are controlled by the Foreign
Exchange and Foreign Trade Law of Japan, you must follow the necessary procedures in accordance
with the relevant laws and regulations of Japan. Also, if you export products/technology controlled by
U.S. export control regulations, or another country's export control laws or regulations, you must follow
the necessary procedures in accordance with such laws or regulations.
If these products/technology are sold, leased, or transferred to a third party, or a third party is granted
license to use these products, that third party must be made aware that they are responsible for
compliance with the relevant laws and regulations.
M01E0706
t
Preliminary Data Sheet E1550E10 (Ver. 1.0)
52