ELPIDA EDJ1116BBSE-GN-F

DATA SHEET
1G bits DDR3 SDRAM
EDJ1104BBSE (256M words × 4 bits)
EDJ1108BBSE (128M words × 8 bits)
EDJ1116BBSE (64M words × 16 bits)
Features
• Density: 1G bits
• Organization
 32M words × 4 bits × 8 banks (EDJ1104BBSE)
 16M words × 8 bits × 8 banks (EDJ1108BBSE)
 8M words × 16 bits × 8 banks (EDJ1116BBSE)
• Package
 78-ball FBGA (EDJ1104/1108BBSE)
 96-ball FBGA (EDJ1116BBSE)
 Lead-free (RoHS compliant) and Halogen-free
• Power supply: VDD, VDDQ = 1.5V ± 0.075V
• Data rate
 1600Mbps/1333Mbps/1066Mbps/800Mbps (max.)
• 1KB page size (EDJ1104/1108BBSE)
 Row address: A0 to A13
 Column address: A0 to A9, A11 (EDJ1104BBSE)
A0 to A9 (EDJ1108BBSE)
• 2KB page size (EDJ1116BBSE)
 Row address: A0 to A12
 Column address: A0 to A9
• Eight internal banks for concurrent operation
• Interface: SSTL_15
• Burst lengths (BL): 8 and 4 with Burst Chop (BC)
• Burst type (BT):
 Sequential (8, 4 with BC)
 Interleave (8, 4 with BC)
• /CAS Latency (CL): 5, 6, 7, 8, 9, 10, 11
• /CAS Write Latency (CWL): 5, 6, 7, 8
• Precharge: auto precharge option for each burst
access
• Driver strength: RZQ/7, RZQ/6 (RZQ = 240Ω)
• Refresh: auto-refresh, self-refresh
• Double-data-rate architecture; two data transfers per
clock cycle
• The high-speed data transfer is realized by the 8 bits
prefetch pipelined architecture
• Bi-directional differential data strobe (DQS and /DQS)
is transmitted/received with data for capturing data at
the receiver
• DQS is edge-aligned with data for READs; centeraligned with data for WRITEs
• Differential clock inputs (CK and /CK)
• DLL aligns DQ and DQS transitions with CK
transitions
• Commands entered on each positive CK edge; data
and data mask referenced to both edges of DQS
• Data mask (DM) for write data
• Posted /CAS by programmable additive latency for
better command and data bus efficiency
• On-Die Termination (ODT) for better signal quality
 Synchronous ODT
 Dynamic ODT
 Asynchronous ODT
• Multi Purpose Register (MPR) for temperature read
out
• ZQ calibration for DQ drive and ODT
• Programmable Partial Array Self-Refresh (PASR)
• /RESET pin for Power-up sequence and reset
function
• SRT range:
 Normal/extended
• Programmable Output driver impedance control
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Specifications
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Document No. E1375E50 (Ver. 5.0)
Date Published April 2009 (K) Japan
Printed in Japan
URL: http://www.elpida.com
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 Average refresh period
7.8µs at 0°C ≤ TC ≤ +85°C
3.9µs at +85°C < TC ≤ +95°C
• Operating case temperature range
 TC = 0°C to +95°C
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• Refresh cycles
This product became EOL in June, 2010.
Elpida Memory, Inc. 2008-2009
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Ordering Information
Die
revision
Part number
B
Part Number
256M × 4
Internal
banks
JEDEC speed bin
(CL-tRCD-tRP)
Package
DDR3-1600J (10-10-10)
DDR3-1600K (11-11-11)
DDR3-1333G (8-8-8)
DDR3-1333H (9-9-9)
DDR3-1066F (7-7-7)
DDR3-1066G (8-8-8)
DDR3-800D (5-5-5)
DDR3-800E (6-6-6)
DDR3-1600J (10-10-10)
DDR3-1600K (11-11-11)
DDR3-1333G (8-8-8)
DDR3-1333H (9-9-9)
DDR3-1066F (7-7-7)
DDR3-1066G (8-8-8)
DDR3-800D (5-5-5)
DDR3-800E (6-6-6)
DDR3-1600J (10-10-10)
DDR3-1600K (11-11-11)
DDR3-1333G (8-8-8)
DDR3-1333H (9-9-9)
DDR3-1066F (7-7-7)
DDR3-1066G (8-8-8)
DDR3-800D (5-5-5)
DDR3-800E (6-6-6)
8
128M × 8
64M × 16
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EDJ1104BBSE-GL-F
EDJ1104BBSE-GN-F
EDJ1104BBSE-DG-F
EDJ1104BBSE-DJ-F
EDJ1104BBSE-AE-F
EDJ1104BBSE-AG-F
EDJ1104BBSE-8A-F
EDJ1104BBSE-8C-F
EDJ1108BBSE-GL-F
EDJ1108BBSE-GN-F
EDJ1108BBSE-DG-F
EDJ1108BBSE-DJ-F
EDJ1108BBSE-AE-F
EDJ1108BBSE-AG-F
EDJ1108BBSE-8A-F
EDJ1108BBSE-8C-F
EDJ1116BBSE-GL-F
EDJ1116BBSE-GN-F
EDJ1116BBSE-DG-F
EDJ1116BBSE-DJ-F
EDJ1116BBSE-AE-F
EDJ1116BBSE-AG-F
EDJ1116BBSE-8A-F
EDJ1116BBSE-8C-F
Organization
(words × bits)
78-ball FBGA
96-ball FBGA
Elpida Memory
Type
D: Monolithic Device
Product Family
J: DDR3
Organization
04: x4
08: x8
16: x16
Environment code
F: Lead Free (RoHS compliant)
and Halogen Free
Speed
GL: DDR3-1600J (10-10-10)
GN: DDR3-1600K (11-11-11)
DG: DDR3-1333G (8-8-8)
DJ: DDR3-1333H (9-9-9)
AE: DDR3-1066F (7-7-7)
AG: DDR3-1066G (8-8-8)
8A: DDR3-800D (5-5-5)
8C: DDR3-800E (6-6-6)
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Density / Bank
11: 1Gb / 8-bank
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E D J 11 04 B B SE - GL - F
Package
SE: FBGA
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Power Supply, Interface
B: 1.5V, SSTL_15
Die Rev.
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Data Sheet E1375E50 (Ver. 5.0)
2
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Pin Configurations (×4, ×8 configuration)
/xxx indicates active low signal.
78-ball FBGA (×4 configuration)
2
1
78-ball FBGA (×8 configuration)
3
7
8
9
NC
NC
VSS
VDD
1
A
2
3
7
8
9
A
VSS
VDD
VSS
B
VDD
NC
NU/(/TDQS) VSS
VDD
B
VSS VSSQ
DQ0
DM
VSSQ VDDQ
VSS VSSQ
C
DQ0
DM/TDQS VSSQ VDDQ
C
VDDQ
DQ2
DQS
DQ1
DQ3
VSSQ
D
VDDQ
DQ2
DQS
DQ1
DQ3
VSSQ
VSSQ
DQ6
/DQS
VDD
VSS
VSSQ
VREFDQ VDDQ
DQ4
DQ7
DQ5
VDDQ
D
VSSQ
NC
/DQS
VDD
VSS
VSSQ
EO
E
VREFDQ VDDQ
E
NC
NC
NC
VDDQ
F
NC
VSS
F
/RAS
CK
VSS
NC
G
ODT
VDD
/CAS
/CK
VDD
CKE
H
NC
/CS
/WE
VSS
BA0
A10(AP)
ZQ
M
VSS
A5
VDD
A7
BA2
A0
CK
VSS
NC
ODT
VDD
/CAS
/CK
VDD
CKE
NC
/CS
/WE
A10(AP)
ZQ
NC
VSS
BA0
BA2
NC
VDD
A3
A0
VSS
A5
A2
A1
A4
VSS
VDD
A7
A9
A11
A6
VDD
VSS /RESET A13
NC
A8
VSS
NC
NC
VREFCA VSS
A12(/BC) BA1
VREFCA VSS
K
VDD
A12(/BC) BA1
VDD
L
A2
A1
A4
VSS
A9
A11
A6
VDD
M
N
N
VSS /RESET A13
Pin name
A0 to A13*
Function
Bank select
Data input/output
DQS, /DQS
Differential data strobe
TDQS, /TDQS
Termination data strobe
3
Chip select
3
CK, /CK
DM
ODT*
3
Command input
/RESET*
Active low asynchronous reset
VDD
Supply voltage for internal
circuit
VSS
Ground for internal circuit
VDDQ
Supply voltage for DQ circuit
VSSQ
Ground for DQ circuit
VREFDQ
Reference voltage for DQ
VREFCA
ZQ
Differential clock input
NC*
1
NU*
2
ODT control
Reference voltage
Reference pin for ZQ
calibration
Clock enable
Write data mask
3
3
Function
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/RAS, /CAS, /WE*
Pin name
(Top view)
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3
DQ0 to DQ7
CKE*
VSS
Address inputs
A10 (AP): Auto precharge
A12(/BC): Burst chop
3
BA0 to BA2*
A8
Pr
NC
(Top view)
/CS*
/RAS
J
L
A3
VDD
L
VSS
H
J
K
NC
G
No connection
Not usable
Data Sheet E1375E50 (Ver. 5.0)
3
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Notes: 1. Not internally connected with die.
2. Don’t connect. Internally connected.
3. Input only pins (address, command, CKE, ODT and /RESET) do not supply termination.
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Pin Configurations (×16 configuration)
/xxx indicates active low signal.
96-ball FBGA
1
2
3
7
8
9
A
VDDQ DQU5 DQU7
DQU4 VDDQ
VSSQ
/DQSU DQU6 VSSQ
VSS
B
VDD
VSS
C
D
VDDQ DQU3 DQU1
DQSU DQU2 VDDQ
VSSQ VDDQ DMU
DQU0 VSSQ
VDD
VSS
VSSQ DQL0
DML
VSSQ VDDQ
F
VDDQ DQL2 DQSL
DQL1 DQL3 VSSQ
VSSQ DQL6 /DQSL
VDD
G
VSS
VSSQ
H
VREFDQ VDDQ DQL4
DQL7 DQL5 VDDQ
J
NC
VSS
/RAS
CK
VSS
NC
ODT
VDD
/CAS
/CK
VDD
CKE
NC
/CS
/WE
A10(AP)
ZQ
NC
VSS
BA0
BA2
NC
VDD
A3
A0
K
L
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E
L
M
VREFCA VSS
N
A12(/BC) BA1
VDD
Pr
P
VSS
A5
A2
A1
A4
VSS
VDD
A7
A9
A11
A6
VDD
VSS /RESET NC
NC
A8
VSS
R
T
(Top view)
A0 to A12*
Function
Address inputs
A10(AP): Auto precharge
A12(/BC): Burst chop
2
BA0 to BA2
Bank select
/CS*
Data input/output
2
/RAS, /CAS, /WE*
2
Pin name
/RESET*
2
Supply voltage for internal
circuit
VSS
Ground for internal circuit
Differential data strobe
VDDQ
Chip select
VSSQ
VREFDQ
VREFCA
CK, /CK
Differential clock input
ZQ
DMU, DML
Write data mask
NC*
ODT*
2
Supply voltage for DQ circuit
Ground for DQ circuit
Reference voltage for DQ
Reference voltage
Reference pin for ZQ
calibration
No connection
ODT control
Note: 1. Not internally connected with die.
2. Input only pins (address, command, CKE, ODT and /RESET) do not supply termination.
Data Sheet E1375E50 (Ver. 5.0)
4
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Command input
2
Active low asynchronous reset
VDD
Clock enable
CKE*
Function
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DQU0 to DQU7
DQL0 to DQL7
DQSU, /DQSU
DQSL, /DQSL
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Pin name
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
CONTENTS
Specifications.................................................................................................................................................1
Features.........................................................................................................................................................1
Ordering Information......................................................................................................................................2
Part Number ..................................................................................................................................................2
Pin Configurations (×4, ×8 configuration) ......................................................................................................3
Pin Configurations (×16 configuration) ..........................................................................................................4
Electrical Conditions ......................................................................................................................................7
Absolute Maximum Ratings .......................................................................................................................... 7
Operating Temperature Condition ................................................................................................................ 7
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Recommended DC Operating Conditions (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V) ................... 8
AC and DC Input Measurement Levels (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V)....................... 8
VREF Tolerances ......................................................................................................................................... 9
Input Slew Rate Derating ............................................................................................................................ 10
AC and DC Logic Input Levels for Differential Signals ................................................................................ 16
AC and DC Output Measurement Levels (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V) .................. 21
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AC Overshoot/Undershoot Specification..................................................................................................... 23
Output Driver Impedance............................................................................................................................ 24
On-Die Termination (ODT) Levels and I-V Characteristics ......................................................................... 26
ODT Timing Definitions............................................................................................................................... 28
IDD Measurement Conditions (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V) ................................... 32
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Electrical Specifications...............................................................................................................................45
DC Characteristics 1 (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V) ................................................. 45
DC Characteristics 2 (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V) ................................................. 46
Pin Capacitance (TC = 25°C, VDD, VDDQ = 1.5V ± 0.075V) ..................................................................... 47
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Standard Speed Bins .................................................................................................................................. 48
AC Characteristics (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V, VSS, VSSQ = 0V)....................... 52
Block Diagram .............................................................................................................................................66
Pin Function.................................................................................................................................................67
Command Operation ...................................................................................................................................69
Command Truth Table ................................................................................................................................ 69
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CKE Truth Table ......................................................................................................................................... 73
Simplified State Diagram .............................................................................................................................74
RESET and Initialization Procedure ............................................................................................................75
Power-Up and Initialization Sequence ........................................................................................................ 75
Reset and Initialization with Stable Power .................................................................................................. 76
Programming the Mode Register.................................................................................................................77
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Mode Register Set Command Cycle Time (tMRD) ..................................................................................... 77
MRS Command to Non-MRS Command Delay (tMOD) ............................................................................. 77
DDR3 SDRAM Mode Register 0 [MR0] ...................................................................................................... 78
Data Sheet E1375E50 (Ver. 5.0)
5
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
DDR3 SDRAM Mode Register 1 [MR1] ...................................................................................................... 79
DDR3 SDRAM Mode Register 2 [MR2] ...................................................................................................... 80
DDR3 SDRAM Mode Register 3 [MR3] ...................................................................................................... 81
Burst Length (MR0) .................................................................................................................................... 82
Burst Type (MR0) ....................................................................................................................................... 82
DLL Enable (MR1) ...................................................................................................................................... 83
DLL-off Mode .............................................................................................................................................. 83
DLL on/off switching procedure .................................................................................................................. 84
Additive Latency (MR1)............................................................................................................................... 86
Write Leveling (MR1) .................................................................................................................................. 87
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TDQS, /TDQS function (MR1) .................................................................................................................... 90
Extended Temperature Usage (MR2) ......................................................................................................... 91
Multi Purpose Register (MR3)..................................................................................................................... 93
Operation of the DDR3 SDRAM ................................................................................................................101
Read Timing Definition.............................................................................................................................. 101
Read Operation ........................................................................................................................................ 105
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Write Timing Definition.............................................................................................................................. 112
Write Operation......................................................................................................................................... 113
Write Timing Violations ............................................................................................................................. 119
Write Data Mask ....................................................................................................................................... 120
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Precharge ................................................................................................................................................. 121
Auto Precharge Operation ........................................................................................................................ 122
Auto-Refresh............................................................................................................................................. 123
Self-Refresh.............................................................................................................................................. 124
Power-Down Mode ................................................................................................................................... 125
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Input Clock Frequency Change during Precharge Power-Down............................................................... 132
On-Die Termination (ODT)........................................................................................................................ 133
ZQ Calibration........................................................................................................................................... 145
Package Drawing ......................................................................................................................................147
78-ball FBGA ............................................................................................................................................ 147
96-ball FBGA ............................................................................................................................................ 148
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Recommended Soldering Conditions........................................................................................................149
Data Sheet E1375E50 (Ver. 5.0)
6
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Electrical Conditions
• All voltages are referenced to VSS (GND)
• Execute power-up and Initialization sequence before proper device operation is achieved.
Absolute Maximum Ratings
Parameter
Rating
Unit
Notes
Power supply voltage
VDD
−0.4 to +1.975
V
1, 3
Power supply voltage for output
VDDQ
−0.4 to +1.975
V
1, 3
Input voltage
VIN
−0.4 to +1.975
V
1
Output voltage
VOUT
−0.4 to +1.975
V
1
Reference voltage
VREFCA
−0.4 to 0.6 × VDD
V
3
Reference voltage for DQ
VREFDQ
−0.4 to 0.6 × VDDQ
V
3
Storage temperature
Tstg
−55 to +100
°C
1, 2
Power dissipation
PD
1.0
W
1
Short circuit output current
IOUT
50
mA
1
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Symbol
Caution
L
Notes: 1. Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
2. Storage temperature is the case surface temperature on the center/top side of the DRAM.
3. VDD and VDDQ must be within 300mV of each other at all times; and VREF must be no greater than
0.6 × VDDQ, When VDD and VDDQ are less than 500mV; VREF may be equal to or less than 300mV.
Pr
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Operating Temperature Condition
Parameter
Operating case temperature
Symbol
Rating
Unit
Notes
TC
0 to +95
°C
1, 2, 3
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Notes: 1. Operating temperature is the case surface temperature on the center/top side of the DRAM.
2. The Normal Temperature Range specifies the temperatures where all DRAM specifications will be
supported. During operation, the DRAM case temperature must be maintained between 0°C to +85°C
under all operating conditions.
3. Some applications require operation of the DRAM in the Extended Temperature Range between +85°C
and +95°C case temperature. Full specifications are guaranteed in this range, but the following additional
conditions apply:
a)
Refresh commands must be doubled in frequency, therefore reducing the refresh interval tREFI to
3.9µs. (This double refresh requirement may not apply for some devices.)
b)
If Self-refresh operation is required in the Extended Temperature Range, then it is mandatory to
either use the Manual Self-Refresh mode with Extended Temperature Range capability (MR2 bit
[A6, A7] = [0, 1]) or enable the optional Auto Self-Refresh mode (MR2 bit [A6, A7] = [1, 0]).
Data Sheet E1375E50 (Ver. 5.0)
7
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Recommended DC Operating Conditions (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V)
Parameter
Symbol
min.
typ.
max.
Unit
Notes
Supply voltage
VDD
1.425
1.5
1.575
V
1, 2
Supply voltage for DQ
VDDQ
1.425
1.5
1.575
V
1, 2
Input reference voltage
VREFCA (DC) 0.49 × VDD
0.50 × VDD
0.51 × VDD
V
3, 4
VREFDQ (DC) 0.49 × VDDQ
0.50 ×
VDDQ
0.51 × VDDQ
V
3, 4
Input reference voltage for
DQ
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Notes: 1. Under all conditions VDDQ must be less than or equal to VDD.
2. VDDQ tracks with VDD. AC parameters are measured with VDD and VDDQ tied together.
3. The AC peak noise on VREF may not allow VREF to deviate from VREF(DC) by more than ±1% VDD (for
reference: approx ±15 mV).
4. For reference: approx. VDD/2 ± 15 mV.
AC and DC Input Measurement Levels (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V)
Single-Ended AC and DC Input Levels for Command and Address
Parameter
Symbol
min.
typ.
max.
Unit
Notes
DC input logic high
VIHCA (DC)
VREF + 0.100

VDD
V
1
DC input logic low
VILCA (DC)
VSS

VREF − 0.100
V
1
AC input logic high
VIHCA (AC)
VREF + 0.175
AC input logic low
VILCA (AC)
*
VIHCA
(AC150)
VILCA
(AC150)
L
AC input logic high
AC input logic low
2
VREF + 0.150
*
2
V
1
V
1
V
1
VREF − 0.150
V
1
2

*

VREF − 0.175

*

2
Notes: 1. For input only pins except /RESET; VREF = VREFCA.
2. See Overshoot and Undershoot Specifications section.
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Single-Ended AC and DC Input Levels for DQ and DM
Symbol
min.
typ.
max.
Unit
Notes
DC input logic high
VIHDQ (DC)
VREF + 0.100

VDD
V
1
DC input logic low
VILDQ (DC)
VSS

VREF − 0.100
V
1
AC input logic high
DDR3-800, 1066
VIHDQ (AC)
VREF + 0.175

*
2
V
1

*
2
V
1

VREF − 0.175
V
1

VREF − 0.150
V
1
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Parameter
DDR3-1333, 1600
VIHDQ (AC)
VREF + 0.150
AC input logic low
DDR3-800, 1066
VILDQ (AC)
*
2
*
2
DDR3-1333, 1600
VILDQ (AC)
Notes: 1. For DQ and DM: VREF = VREFDQ.
2. See Overshoot and Undershoot Specifications section.
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Data Sheet E1375E50 (Ver. 5.0)
8
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
VREF Tolerances
The dc-tolerance limits and ac-noise limits for the reference voltages VREFCA and VREFDQ are shown in Figure
VREF(DC) Tolerance and VREF AC-Noise Limits. It shows a valid reference voltage VREF(t) as a function of time.
(VREF stands for VREFCA and VREFDQ likewise).
VREF(DC) is the linear average of VREF(t) over a very long period of time (e.g. 1 sec). This average has to meet the
min/max requirements in the table of(Single-Ended AC and DC Input Levels for Command and Address).
Furthermore VREF(t) may temporarily deviate from VREF(DC) by no more than +/- 1% VDD.
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VREF(DC) Tolerance and VREF AC-Noise Limits
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The voltage levels for setup and hold time measurements VIH(AC), VIH(DC), VIL(AC) and VIL(DC) are dependent
on VREF.
VREF shall be understood as VREF(DC), as defined in figure above, VREF(DC) Tolerance and VREF AC-Noise
Limits.
This clarifies that DC-variations of VREF affect the absolute voltage a signal has to reach to achieve a valid high or
low level and therefore the time to which setup and hold is measured. System timing and voltage budgets need to
account for VREF(DC) deviations from the optimum position within the data-eye of the input signals.
This also clarifies that the DRAM setup/hold specification and derating values need to include time and voltage
associated with VREF AC-noise. Timing and voltage effects due to ac-noise on VREF up to the specified limit (±1%
of VDD) are included in DRAM timings and their associated deratings.
Data Sheet E1375E50 (Ver. 5.0)
9
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Input Slew Rate Derating
For all input signals the total tIS, tDS (setup time) and tIH, tDH (hold time) required is calculated by adding the data
sheet tIS (base), tDS (base) and tIH (base), tDH (base) value to the ∆tIS, ∆tDS and ∆tIH, ∆tDH derating value
respectively.
Example: tDS (total setup time) = tDS (base) + ∆tDS.
EO
Setup (tIS, tDS) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of VREF
(DC) and the first crossing of VIH (AC) min. Setup (tIS, tDS) nominal slew rate for a falling signal is defined as the
slew rate between the last crossing of VREF (DC) and the first crossing of VIL (AC) max. If the actual signal is
always earlier than the nominal slew rate line between shaded ‘VREF (DC) to AC region’, use nominal slew rate for
derating value (See the figure of Slew Rate Definition Nominal).
If the actual signal is later than the nominal slew rate line anywhere between shaded ‘VREF (DC) to AC region’, the
slew rate of a tangent line to the actual signal from the AC level to DC level is used for derating value (see the figure
of Slew Rate Definition Tangent).
L
Hold (tIH, tDH) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of
VIL (DC) max. and the first crossing of VREF (DC). Hold (tIH, tDH) nominal slew rate for a falling signal is defined
as the slew rate between the last crossing of VIH (DC) min. and the first crossing of VREF (DC). If the actual signal
is always later than the nominal slew rate line between shaded ‘DC level to VREF (DC) region’, use nominal slew
rate for derating value (See the figure of Slew Rate Definition Nominal).
If the actual signal is earlier than the nominal slew rate line anywhere between shaded ‘DC to VREF (DC) region’,
the slew rate of a tangent line to the actual signal from the DC level to VREF (DC) level is used for derating value
(see the figure of Slew Rate Definition Tangent).
For a valid transition the input signal has to remain above/below VIH/VIL(AC) for some time tVAC (see the table of
Required time tVAC above VIH(AC) {below VIL(AC)} for valid transition).
Pr
Although for slow slew rates the total setup time might be negative (i.e. a valid input signal will not have reached
VIH/IL (AC) at the time of the rising clock transition) a valid input signal is still required to complete the transition and
reach VIH/IL (AC).
For slew rates in between the values listed in the tables below, the derating values may obtained by linear
interpolation.
These values are typically not subject to production test. They are verified by design and characterization.
od
[Address/Command Setup and Hold Base-Values for 1V/ns]
DDR3-800
DDR3-1066
tIS(base)
200
125
tIH(base)
275
200
tIS(base) AC150
200 + 150
125 + 150
DDR3-1333
DDR3-1600
Unit
Reference
65
45
ps
VIH/VIL(AC)
140
120
ps
VIH/VIL(DC)
65 + 125
45 + 125
ps
VIH/VIL(AC)
t
uc
Notes: 1 AC/DC referenced for 1V/ns Address/Command slew rate and 2V/ns differential CK, /CK slew rate.
2. The tHS (base) AC150 specifications are adjusted from the tIS(base) specification by adding an additional
100ps of derating to accommodate for the lower alternate threshold of 150mV and another 25ps to
account for the earlier reference point [(175mv − 150mv)/1V/ns]
Data Sheet E1375E50 (Ver. 5.0)
10
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
[Derating Values of tIS/tIH AC/DC based (DDR3-800, 1066, 1333, 1600)]
∆tIS, ∆tIH derating in [ps] AC/DC based
AC175 Threshold -> VIH(AC)=VREF(DC)+175mV, VIL(AC)=VREF(DC)-175mV
CK, /CK differential slew rate
4.0 V/ns
3.0 V/ns
2.0 V/ns
1.8 V/ns
1.6 V/ns
1.4 V/ns
1.2 V/ns
1.0 V/ns
∆tIS
∆tIH
∆tIS
∆tIH
∆tIS
∆tIH
∆tIS
∆tIH
∆tIS
∆tIS
∆tIS
∆tIS
2.0
+88
+50
+88
+50
+88
+50
+96
+58
+104 +66
+112 +74
+120 +84
+128 +100 ps
1.5
+59
+34
+59
+34
+59
+34
+67
+42
+75
+50
+83
+58
+91
+68
+99
+84
ps
0
0
0
0
0
0
+8
+8
+16
+16
+24
+24
+32
+34
+40
+50
ps
−2
−4
−2
−4
−2
−4
+6
+4
+14
+12
+22
+20
+30
+30
+38
+46
ps
−6
−10
−6
−10
−6
−10
+2
−2
+10
+6
+18
+14
+26
+24
+34
+40
ps
−11
−16
−11
−16
−11
−16
−3
−8
+5
0
+13
+8
+21
+18
+29
+34
ps
−17
−26
−17
−26
−17
−26
−9
−18
−1
−10
+7
−2
+15
+8
+23
+24
ps
EO
1.0
CMD,
ADD 0.9
slew
0.8
rate
0.7
(V/ns)
0.6
∆tIH
∆tIH
∆tIH
∆tIH
Unit
0.5
−35
−40
−35
−40
−35
−40
−27
−32
−19
−24
−11
−16
−2
−6
+5
+10
ps
0.4
−62
−60
−62
−60
−62
−60
−54
−52
−46
−44
−38
−36
−30
−26
−22
−10
ps
[Derating Values of tIS/tIH AC/DC based-Alternate AC150 Threshold (DDR3-800, 1066, 1333, 1600)]
∆tIS, ∆tIH derating in [ps] AC/DC based
Alternate AC150 Threshold -> VIH(AC)=VREF(DC)+150mV, VIL(AC)=VREF(DC)-150mV
L
CK, /CK differential slew rate
3.0 V/ns
2.0 V/ns
1.8 V/ns
1.6 V/ns
1.4 V/ns
1.2 V/ns
1.0 V/ns
∆tIS
∆tIH
∆tIS
∆tIH
∆tIS
∆tIH
∆tIS
∆tIH
∆tIS
∆tIH
∆tIS
∆tIH
∆tIS
∆tIS
2.0
+75
+50
+75
+50
+75
+50
+83
+58
+91
+66
+99
+74
+107 +84
+115 +100 ps
1.5
+50
+34
+50
+34
+50
+34
+58
+42
+66
+50
+74
+58
+82
+68
+90
+84
ps
0
0
0
0
0
−4
0
0
−10
0
0
−16
1.0
CMD,
ADD 0.9
slew
0.8
rate
0.7
(V/ns)
0.6
Pr
4.0 V/ns
∆tIH
∆tIH
Unit
0
0
+8
+8
+16
+16
+24
+24
+32
+34
+40
+50
ps
−4
0
−4
+8
+4
+16
+12
+24
+20
+32
+30
+40
+46
ps
−10
0
−10
+8
−2
+16
+6
+24
+14
+32
+24
+40
+40
ps
0
−16
0
−16
+8
−8
+16
0
+24
+8
+32
+18
+40
+34
ps
−26
−1
−26
−1
−26
+7
−18
+15
−10
+23
−2
+31
+8
+39
+24
ps
−10
−40
−10
−40
−10
−40
−2
−32
+6
−24
+14
−16
+22
−6
+30
+10
ps
0.4
−25
−60
−25
−60
−25
−60
−17
−52
−9
−44
−1
−36
7
−26
15
−10
ps
od
−1
0.5
[Required time tVAC above VIH(AC) {below VIL(AC)} for Valid Transition]
tVAC @ 175
mV[ps]
tVAC @ 150
mV[ps]
Slew rate (V/ns)
min.
max.
>2.0
75

2.0
57

1.5
50

1.0
38

0.9
34

0.8
29

0.7
22

0.6
13
0.5
0
<0.5
0
min.
max.


167

163

162

161

159


155


150


150

11
t
Data Sheet E1375E50 (Ver. 5.0)
uc
175
170
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
[Data Setup and Hold Base-Values]
DDR3-800
DDR3-1066
DDR3-1333
DDR3-1600
Unit
Reference
tDS(base)
75
25
30
10
ps
VIH/VIL(AC)
tDH(base)
150
100
65
45
ps
VIH/VIL(DC)
Note: 1
AC/DC referenced for 1V/ns DQ slew rate and 2V/ns DQS slew rate
[Derating Values of tDS/tDH AC/DC based (DDR3-800, 1066)]
∆tDS, ∆tDH derating in [ps] AC/DC based
DQS, /DQS differential slew rate
4.0 V/ns
3.0 V/ns
2.0 V/ns
1.8 V/ns
1.6 V/ns
1.4 V/ns
1.2 V/ns
1.0 V/ns
∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH Unit
EO
2.0
+88
+50
+88
+50
+88
+50










ps
1.5
+59
+34
+59
+34
+59
+34
+67
+42








ps
1.0
0
0
0
0
0
0
+8
+8
+16
+16






ps
DQ
0.9
slew
0.8
rate
(V/ns) 0.7


−2
−4
−2
−4
+6
+4
+14
+12
+22
+20




ps




−6
−10
+2
−2
+10
+6
+18
+14
+26
+24


ps






−3
−8
+5
0
+13
+8
+21
+18
+29
+34
ps
0.6








−1
−10
+7
−2
+15
+8
+23
+24
ps











−11
−16
−2
−6
+5
+10
ps











−30
−26
−22
−10
ps
L
0.5
0.4
[Derating Values of tDS/tDH AC/DC based (DDR3-1333, 1600)]
∆tDS, ∆tDH derating in [ps] AC/DC based
Pr
DQS, /DQS differential slew rate
4.0 V/ns
3.0 V/ns
2.0 V/ns
1.8 V/ns
1.6 V/ns
1.4 V/ns
1.2 V/ns
1.0 V/ns
∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH Unit
+75
+50
+75
+50
+75
+50










ps
1.5
+59
+34
+59
+34
+59
+34
+58
+42








ps
1.0
0
0
0
0
+8
+8
+16
+16






ps
0
−4
+8
+4
+16
+12
+24
+20




ps
−10
+8
−2
+16
+6
+24
+14
+32
+24


ps
−8
+16
0
+24
+8
+32
+18
+40
+34
ps

+15
−10
+23
−2
+31
+8
+39
+24
ps



+14
−16
+22
−6
+30
+10
ps





+7
−26
+15
−10
ps
0
0
DQ
0.9
slew
0.8
rate
(V/ns) 0.7


0
−4










+8
0.6







0.5







0.4







t
uc
od
2.0
Data Sheet E1375E50 (Ver. 5.0)
12
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
[Required time tVAC above VIH(AC) {below VIL(AC)} for valid transition]
DDR3-800, 1066
DDR3-1333, 1600
tVAC [ps]
tVAC [ps]
min.
max.
>2.0
75

175

2.0
57

170

1.5
50

167

1.0
38

163

0.9
34

162

0.8
29

161

0.7
22

159

0.6
13

155

0.5
0

150

<0.5
0

150

min.
max.
L
EO
Slew rate (V/ns)
t
uc
od
Pr
Data Sheet E1375E50 (Ver. 5.0)
13
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
CK
/CK
tIS
tIH
tIS
tIH
VDD
tVAC
VIH (AC) min.
VREF to AC
region
VIH (DC) min.
VREF (DC)
DC to VREF
region
nominal
slew rate
VIL (DC) max.
VREF to AC
region
VIL (AC) max.
tVAC
VSS
∆TFS
∆TRH ∆TRS
∆TFH
Slew Rate Definition Nominal (CK, /CK)
L
EO
nominal
slew rate
DC to VREF
region
/DQS
DQS
tDS
tDH
tDS
tDH
VDD
Pr
tVAC
VIH (AC) min.
VREF to AC
region
VIH (DC) min.
od
VREF (DC)
DC to VREF
region
nominal
slew rate
nominal
slew rate
DC to VREF
region
VIL (DC) max.
VREF to AC
region
VIL (AC) max.
tVAC
VSS
∆TRH ∆TRS
uc
∆TFS
∆TFH
Slew Rate Definition Nominal (DQS, /DQS)
VIH (AC) min. - VREF (DC)
Setup slew rate
=
Rising signal
∆TRS
VREF (DC) - VIL (AC) max.
Setup slew rate
=
Falling signal
∆TFS
Hold slew rate
Rising signal
=
VREF (DC) - VIL (DC) max.
Hold slew rate
Falling signal
Data Sheet E1375E50 (Ver. 5.0)
14
VIH (DC) min. - VREF (DC)
∆TFH
t
∆TRH
=
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
CK
/CK
tIS
tIH
tIS
tIH
VDD
tVAC
VIH (AC) min.
VREF to AC
region
nominal
line
nominal
line
VIH (DC) min.
DC to VREF
region
tangent
line
VREF (DC)
tangent
line
VIL (DC) max.
VREF to AC
region
nominal
line
VIL (AC) max.
tVAC
VSS
∆TFS
∆TRH
∆TRS
∆TFH
Slew Rate Definition Tangent (CK, /CK)
L
EO
DC to VREF
region
nominal
line
/DQS
DQS
Pr
tDS
tDH
tDS
tDH
VDD
tVAC
VIH (AC) min.
VREF to AC
region
nominal
line
nominal
line
VIH (DC) min.
VREF (DC)
od
DC to VREF
region
tangent
line
tangent
line
DC to VREF
region
nominal
line
VIL (DC) max.
VREF to AC
region
nominal
line
VIL (AC) max.
uc
tVAC
VSS
∆TFS
∆TRH
∆TRS
∆TFH
Slew Rate Definition Tangent (DQS, /DQS)
Hold slew rate
Rising signal
=
tangent line [VREF (DC) - VIL (DC) max.]
Hold slew rate
Falling signal
∆TRH
Data Sheet E1375E50 (Ver. 5.0)
15
=
t
tangent line [VIH (AC) min. - VREF (DC)]
Setup slew rate
=
Rising signal
∆TRS
tangent line [VREF (DC) - VIL (AC) max.]
Setup slew rate
=
Falling signal
∆TFS
tangent line [VIH (DC) min. - VREF (DC)]
∆TFH
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
AC and DC Logic Input Levels for Differential Signals
Differential signal definition
EO
! "#"
L
Pr
Definition of Differential AC-swing and “time above AC-level” tDVAC
[Differential AC and DC Input Levels]
Parameter
typ.
VIHdiff
+0.200
Differential input logic low
VILdiff
3
Differential input logic AC
2 × (VIH (AC) −
VIHdiff (AC)
VREF)
Differential input logic AC
VILdiff (AC) *
*
3
max.
Unit
Notes

*
3
V
1

–0.200
V
1

3
V
2
2 × (VREF − VIL(AC)) V
2
od
min.
Differential input logic high
Symbol

*
t
uc
Notes: 1 Used to define a differential signal slew-rate.
2. For CK, /CK use VIH/VIL(AC) of address/command and VREFCA; for strobes (DQS, /DQS, DQSL,
/DQSL, DQSU, /DQSU) use VIH/VIL(AC) of DQs and VREFDQ; if a reduced ac-high or ac-low level is
used for a signal group, then the reduced level applies also here.
3 These values are not defined, however the single ended components of differential signal CK, /CK, DQS,
/DQS, DQSL, /DQSL, DQSU, /DQSU need to be within the respective limits (VIH(DC) max, VIL(DC)min)
for single-ended signals as well as the limitations for overshoot and undershoot. Refer to Overshoot and
Undershoot specifications.
Data Sheet E1375E50 (Ver. 5.0)
16
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
[Required time tVAC above VIH(AC) {below VIL(AC)} for valid transition]
@[VIH/Ldiff (AC)] = 350 mV
@[VIH/Ldiff (AC)] = 300 mV
tDVAC [ps]
tDVAC [ps]
min.
max.
>4.0
75

175

4.0
57

170

3.0
50

167

2.0
38

163

1.8
34

162

1.6
29

161

1.4
22

159

1.2
13

155

1.0
0

150

<1.0
0

150

min.
max.
L
EO
Slew rate (V/ns)
t
uc
od
Pr
Data Sheet E1375E50 (Ver. 5.0)
17
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Single-Ended Requirements for Differential Signals
Each individual component of a differential signal (CK, DQS, DQSL, DQSU, /CK, /DQS, /DQSL or /DQSU) has also
to comply with certain requirements for single-ended signals.
CK and /CK have to approximately reach VSEH min. / VSEL max. (approximately equal to the AC-levels (VIH(AC) /
VIL(AC)) for Address/command signals) in every half-cycle.
DQS, DQSL, DQSU, /DQS, /DQSL have to reach VSEH min./VSEL max. (approximately the AC-levels (VIH(AC) /
VIL(AC)) for DQ signals) in every half-cycle preceding and following a valid transition.
Note that the applicable ac-levels for Address/command and DQ’s might be different per speed-bin etc. E.g. if VIH
150 (AC)/VIL 150 (AC) is used for Address/command signals, then these ac-levels apply also for the single ended
components of differential CK and /CK.
VDD or VDDQ
EO
VSEH min.
VSEH
VDD/2 or VDDQ/2
L
CK or DQS
VSEL max.
Pr
VSS or VSSQ
VSEL
time
Single-Ended Requirement for Differential Signals.
t
uc
od
Note that while Address/command and DQ signal requirements are with respect to VREF, the single-ended
components of differential signals have a requirement with respect to VDD / 2; this is nominally the same. The
transition of single-ended signals through the ac-levels is used to measure setup time. For single-ended components
of differential signals the requirement to reach VSEL max, VSEH min has no bearing on timing, but adds a restriction
on the common mode characteristics of these signals.
Data Sheet E1375E50 (Ver. 5.0)
18
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
[Single-ended levels for CK, DQS, DQSL, DQSU, /CK, /DQS, /DQSL or /DQSU]
Parameter
Symbol
Single-ended high level for strobes
Single-ended high level for CK, /CK
Single-ended low level for strobes
Single-ended low level for CK, /CK
VSEH
VSEL
min.
typ.
max.
(VDD/2) + 0.175 
*
3
(VDD/2) + 0.175 
*
3
Unit
Notes
V
1, 2
V
1, 2
*
3

(VDD/2) − 0.175 V
1, 2
*
3

(VDD/2) − 0.175 V
1, 2
EO
Notes: 1. For CK, /CK use VIH/VIL(AC) of ADD/CMD; for strobes (DQS, /DQS, DQSL, /DQSL, DQSU, /DQSU) use
VIH/VIL(AC) of DQs.
2. VIH(AC)/VIL(AC) for DQs is based on VREFDQ; VIH(AC)/VIL(AC) for address/command is based on
VREFCA; if a reduced ac-high or ac-low level is used for a signal group, then the reduced level applies
also here.
3 These values are not defined, however the single ended components of differential signals CK, /CK, DQS,
/DQS, DQSL, /DQSL, DQSU, /DQSU need to be within the respective limits (VIH(DC) max, VIL(DC)min)
for single-ended signals as well as the limitations for overshoot and undershoot. Refer to Overshoot and
Undershoot specifications.
To guarantee tight setup and hold times as well as output skew parameters with respect to clock and strobe, each
cross point voltage of differential input signals (CK, /CK and DQS, /DQS) must meet the requirements in table above.
The differential input cross point voltage VIX is measured from the actual cross point of true and complement signal
to the midlevel between of VDD and VSS.
L
VDD
CK, DQS
VIX
Pr
VDD/2
VIX
VIX
/CK, /DQS
VSS
VIX Definition
od
[Cross point voltage for differential input signals (CK, DQS)]
Parameter
Symbol
pins
min.
max.
Unit
Differential input cross point voltage
relative to VDD/2
VIX
CK, /CK
−150
150
mV
−175
175
mV
DQS, /DQS −150
150
mV
VIX
Note
1
uc
Note: 1. Extended range for VIX is only allowed for clock and if CK and /CK are monotonic, have a single-ended
swing VSEL/VSEH of at least VDD/2 +/-250 mV, and the differential slew rate of CK - /CK is larger than 3
V/ ns. Refer to the table of Cross point voltage for differential input signals (CK, DQS) for VSEL and VSEH
standard values.
t
Data Sheet E1375E50 (Ver. 5.0)
19
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
[Differential Input Slew Rate Definition]
Measured
Description
Differential input slew rate
for rising edge
(CK - /CK and DQS - /DQS)
Differential input slew rate
for falling edge
(CK - /CK and DQS - /DQS)
From
To
Defined by
Applicable for
VILdiff (max.)
VIHdiff (min.)
VIHdiff (min.) – VILdiff (max.)
∆TRdiff
VIHdiff (min.)
VILdiff (max.)
VIHdiff (min.) – VILdiff (max.)
∆TFdiff
Note
Note: The differential signal (i.e. CK, /CK and DQS, /DQS) must be linear between these thresholds.
VIHdiff(min.)
EO
VILdiff (max.)
∆TRdiff
∆TFdiff
VIHdiff (min.) − VILdiff (max.)
L
Falling slew =
0
Rising slew =
∆TFdiff
VIHdiff (min.) − VILdiff (max.)
∆TRdiff
Differential Input Slew Rate Definition for DQS, /DQS and CK, /CK
t
uc
od
Pr
Data Sheet E1375E50 (Ver. 5.0)
20
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
AC and DC Output Measurement Levels (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V)
Parameter
Symbol
EO
DC output high measurement level
(for IV curve linearity)
DC output middle measurement level
(for IV curve linearity)
DC output low measurement level
(for IV curve linearity)
AC output high measurement level
(for output slew rate)
AC output low measurement level
(for output slew rate)
AC differential output high measurement
level (for output slew rate)
AC differential output low measurement
level (for output slew rate)
AC differential cross point voltage
Specification
Unit
Notes
V
VOH (DC)
0.8 × VDDQ
VOM (DC)
0.5 × VDDQ
VOL (DC)
0.2 × VDDQ
VOH (AC)
VTT + 0.1 × VDDQ
V
1
VOL (AC)
VTT − 0.1 × VDDQ
V
1
VOHdiff
0.2 × VDDQ
V
2
VOLdiff
−0.2 × VDDQ
V
2
VOX (AC)
TBD
V
Notes: 1. The swing of ±0.1 × VDDQ is based on approximately
swing with a driver impedance of 34Ω and an effective
differential outputs.
2. The swing of ±0.2 × VDDQ is based on approximately
swing with a driver impedance of 34Ω and an effective
differential outputs.
V
V
50% of the static single-ended output high or low
test load of 25Ω to VTT = VDDQ/2 at each of the
50% of the static single-ended output high or low
test load of 25Ω to VTT = VDDQ/2 at each of the
L
Output Slew Rate Definitions
[Single-Ended Output Slew Rate Definition]
Measured
Output slew rate for rising edge
Output slew rate for falling edge
From
To
VOL (AC)
VOH (AC)
VOH (AC)
VOL (AC)
Defined by
VOH (AC) – VOL (AC)
∆TRse
VOH (AC) – VOL (AC)
∆TFse
od
Pr
Description
VOH (AC)
VTT
VOL (AC)
∆TFse
VOH (AC) − VOL (AC)
Rising slew =
∆TFse
uc
Falling slew =
∆TRse
VOH (AC) − VOL (AC)
∆TRse
Input Slew Rate Definition for Single-Ended Signals
t
Data Sheet E1375E50 (Ver. 5.0)
21
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
[Differential Output Slew Rate Definition]
Measured
Description
From
To
Defined by
Differential output slew rate
for rising edge
VOLdiff (AC)
VOHdiff (AC)
Differential output slew rate
for falling edge
VOHdiff (AC)
VOLdiff (AC)
VOHdiff(AC) – VOLdiff (AC)
∆TRdiff
VOHdiff (AC) – VOLdiff (AC)
∆TFdiff
VOHdiff (AC)
0
VOLdiff (AC)
EO
∆TRdiff
∆TFdiff
Falling slew =
VOHdiff (AC) − VOLdiff (AC)
Rising slew =
∆TFdiff
VOHdiff (AC) − VOLdiff (AC)
∆TRdiff
Differential Input Slew Rate Definition for DQS, /DQS and CK, /CK
Parameter
L
Output Slew Rate (RON = RZQ/7 setting)
Symbol
Speed
SRQse
Output slew rate
(Differential)
SRQdiff
min.
max.
Unit
Notes
2.5
5
V/ns
1
10
V/ns
1
Pr
Output slew rate
(Single-ended)
DDR3-800
DDR3-1066
DDR3-1333
DDR3-1600
DDR3-800
DDR3-1066
DDR3-1333
DDR3-1600
5
od
Remark: SR = slew rate. se = single-ended signals. diff = differential signals. Q = Query output
Note: 1.In two cases, a maximum slew rate of 6V/ns applies for a single DQ signal within a byte lane.
(a) is defined for a single DQ signal within a byte lane which is switching into a certain direction (either from
high to low or low to high) while all remaining DQ signals in the same byte lane are static (i.e. they stay at
either high or low).
(b) is defined for a single DQ signal within a byte lane which is switching into a certain direction (either from
high to low or low to high) while all remaining DQ signals in the same byte lane are switching into the
opposite direction (i.e. from low to high or high to low respectively). For the remaining DQ signal switching
into the opposite direction, the regular maximum limit of 5V/ns applies.
Reference Load for AC Timing and Output Slew Rate
VDDQ
DQ
DQS,
/DQS
VTT = VSSQ/2
RT =25Ω
22
t
Reference Output Load
Data Sheet E1375E50 (Ver. 5.0)
uc
DUT
CK, /CK
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
AC Overshoot/Undershoot Specification
Parameter
Pins
Specification
Maximum peak amplitude allowed for overshoot
Command, Address,
CKE, ODT
0.4V
Maximum peak amplitude allowed for undershoot
0.4V
Maximum overshoot area above VDD
DDR3-1600
0.33V-ns
DDR3-1333
0.4V-ns
DDR3-1066
0.5V-ns
DDR3-800
0.67V-ns
Maximum undershoot area below VSS
DDR3-1600
0.33V-ns
0.4V-ns
DDR3-1066
0.5V-ns
EO
DDR3-1333
DDR3-800
0.67V-ns
Maximum peak amplitude allowed for overshoot
CK, /CK
0.4V
Maximum peak amplitude allowed for undershoot
0.4V
Maximum overshoot area above VDD
DDR3-1600
0.13V-ns
0.15V-ns
DDR3-1066
0.19V-ns
DDR3-800
L
DDR3-1333
0.25V-ns
Maximum undershoot area below VSS
DDR3-1600
DDR3-1333
0.15V-ns
Pr
DDR3-1066
0.13V-ns
DDR3-800
Maximum peak amplitude allowed for overshoot
0.19V-ns
0.25V-ns
DQ, DQS, /DQS, DM
0.4V
Maximum peak amplitude allowed for undershoot
0.4V
Maximum overshoot area above VDDQ
DDR3-1600
0.13V-ns
DDR3-1333
0.15V-ns
od
DDR3-1066
0.19V-ns
DDR3-800
0.25V-ns
Maximum undershoot area below VSSQ
DDR3-1600
0.13V-ns
DDR3-1333
0.15V-ns
DDR3-1066
0.19V-ns
DDR3-800
0.25V-ns
uc
Maximum amplitude
Overshoot area
Volts (V)
VDD, VDDQ
VSS, VSSQ
Undershoot area
Data Sheet E1375E50 (Ver. 5.0)
23
t
Time (ns)
Overshoot/Undershoot Definition
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Output Driver Impedance
RON will be achieved by the DDR3 SDRAM after proper I/O calibration. Tolerance and linearity requirements are
referred to the Output Driver DC Electrical Characteristics table.
A functional representation of the output buffer is shown in the figure Output Driver: Definition of Voltages and
Currents.
RON is defined by the value of the external reference resistor RZQ as follows:
• RON40 = RZQ/6
• RON34 = RZQ/7
The individual pull-up and pull-down resistors (RONPu and RONPd) are defined as follows:
Parameter
Symbol
EO
Output driver pull-up impedance
RONPu
Output driver pull-down impedance
RONPd
Conditions
Definition
VDDQ − VOUT
IOUT
VOUT
IOUT
RONPd is turned off
RONPu is turned off
Chip in Drive Mode
Output Driver
VDDQ
IPu
L
To
other
circuitry
like
RCV,
...
RONPu
DQ
IOut
RONPd
VOut
IPd
VSSQ
Pr
Output Driver: Definition of Voltages and Currents
t
uc
od
Data Sheet E1375E50 (Ver. 5.0)
24
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Output Driver DC Electrical Characteristics
(RZQ = 240Ω, entire operating temperature range; after proper ZQ calibration)
RONnom Resistor
VOUT
min.
nom.
max.
VOL (DC) = 0.2 × VDDQ
VOM (DC) = 0.5 × VDDQ
VOH (DC) = 0.8 × VDDQ
VOL (DC) = 0.2 × VDDQ
VOM (DC) = 0.5 × VDDQ
VOH (DC) = 0.8 × VDDQ
VOL (DC) = 0.2 × VDDQ
VOM (DC) = 0.5 × VDDQ
VOH (DC) = 0.8 × VDDQ
VOL (DC) = 0.2 × VDDQ
VOM (DC) = 0.5 × VDDQ
VOH (DC) = 0.8 × VDDQ
0.6
0.9
0.9
0.9
0.9
0.6
0.6
0.9
0.9
0.9
0.9
0.6
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.1
1.1
1.4
1.4
1.1
1.1
1.1
1.1
1.4
1.4
1.1
1.1
Mismatch between pull-up and pull down, MMPuPd VOM (DC) = 0.5 × VDDQ
−10
40Ω
RON40Pd
RON40Pu
34Ω
RON34Pd
EO
RON34Pu
10
Unit
Notes
RZQ/6 1, 2, 3
RZQ/6 1, 2, 3
RZQ/7 1, 2, 3
RZQ/7 1, 2, 3
%
1, 2, 4
L
Notes: 1. The tolerance limits are specified after calibration with stable voltage and temperature.
For the behavior of the tolerance limits if temperature or voltage changes after calibration, see following
section on voltage and temperature sensitivity.
2. The tolerance limits are specified under the condition that VDDQ = VDD and that VSSQ = VSS.
3. Pull-down and pull-up output driver impedances are recommended to be calibrated at 0.5 × VDDQ. Other
calibration schemes may be used to achieve the linearity spec shown above, e.g. calibration at 0.2 ×
VDDQ and 0.8 × VDDQ.
4. Measurement definition for mismatch between pull-up and pull-down, MMPuPd:
Measure RONPu and RONPd, both at 0.5 × VDDQ:
MMPuPd =
RONPu - RONPd
× 100
RONnom
Pr
Output Driver Temperature and Voltage Sensitivity
If temperature and/or voltage change after calibration, the tolerance limits widen according to the table Output Driver
Sensitivity Definition and Output Driver Voltage and Temperature Sensitivity.
∆T = T − T (@calibration); ∆V= VDDQ − VDDQ (@calibration); VDD = VDDQ
Note: dRONdT and dRONdV are not subject to production test but are verified by design and characterization.
min
od
[Output Driver Sensitivity Definition]
[email protected] (DC) 0.6 − dRONdTH × |∆T| − dRONdVH × |∆V|
RON@ VOM (DC)
max
unit
1.1 + dRONdTH × |∆T| + dRONdVH × |∆V|
RZQ/7
0.9 − dRONdTM × |∆T| − dRONdVM × |∆V| 1.1 + dRONdTM × |∆T| + dRONdVM × |∆V| RZQ/7
[email protected] (DC) 0.6 − dRONdTL × |∆T| − dRONdVL × |∆V|
1.1 + dRONdTL × |∆T| + dRONdVL × |∆V|
RZQ/7
[Output Driver Voltage and Temperature Sensitivity]
dRONdTM
0
1.5
dRONdVM
0
0.15
dRONdTL
0
1.5
dRONdVL
0
TBD
dRONdTH
0
1.5
dRONdVH
0
TBD
Data Sheet E1375E50 (Ver. 5.0)
25
Unit
%/°C
%/mV
%/°C
%/mV
%/°C
%/mV
t
max.
uc
min.
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
On-Die Termination (ODT) Levels and I-V Characteristics
On-Die Termination effective resistance RTT is defined by bits A9, A6 and A2 of the MR1 Register.
ODT is applied to the DQ, DM, DQS, /DQS and TDQS, /TDQS (×8 devices only) pins.
A functional representation of the on-die termination is shown in the figure On-Die Termination: Definition of Voltages
and Currents.
The individual pull-up and pull-down resistors (RTTPu and RTTPd) are defined as follows:
Parameter
Symbol
ODT pull-up resistance
RTTPu
ODT pull-down resistance
RTTPd
Definition
Conditions
VDDQ − VOUT
IOUT
VOUT
IOUT
RTTPd is turned off
RTTPu is turned off
ODT
VDDQ
IPu
To
other
circuitry
like
RCV,
...
IOut = IPd - IPu
RTTPu
DQ
IOut
RTTPd
L
EO
Chip in Termination Mode
VOut
IPd
VSSQ
On-Die Termination: Definition of Voltages and Currents
Pr
The value of the termination resistor can be set via MRS command to RTT60 = RZQ/4 (nom) or RTT120 = RZQ/2
(nom).
RTT60 or RTT120 will be achieved by the DDR3 SDRAM after proper I/O calibration has been performed.
Tolerances requirements are referred to the ODT DC Electrical Characteristics table.
RTT =
od
Measurement Definition for RTT
Apply VIH (AC) to pin under test and measure current I(VIH(AC)), then apply VIL(AC) to pin under test and measure
current I(VIL(AC)) respectively.
VIH( AC) − VIL( AC)
I( VIH( AC)) − I( VIL( AC))
Measurement Definition for ∆VM
Measure voltage (VM) at test pin (midpoint) with no load.
t
uc
 2 × VM 
- 1 × 100
∆VM = 
 VDDQ 
Data Sheet E1375E50 (Ver. 5.0)
26
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
ODT DC Electrical Characteristics
(RZQ = 240Ω, entire operating temperature range; after proper ZQ calibration)
MR1
[A9, A6, A2] RTT
[0, 1, 0]
Resistor
VOUT
min.
nom.
max.
Unit
Notes
120Ω RTT120Pd240
VOL (DC)
VOM (DC)
VOH (DC)
0.6
0.9
0.9
1.0
1.0
1.0
1.1
1.1
1.4
RZQ
1, 2, 3, 4
RTT120Pu240
VOL (DC)
VOM (DC)
VOH (DC)
0.9
0.9
0.6
1.0
1.0
1.0
1.4
1.1
1.1
RZQ
1, 2, 3, 4
RZQ/2
1, 2, 5
RZQ/2
1, 2, 3, 4
RZQ/2
1, 2, 3, 4
RZQ/4
1, 2, 5
RZQ/3
1, 2, 3, 4
RZQ/3
1, 2, 3, 4
RZQ/6
1, 2, 5
RZQ/4
1, 2, 3, 4
RZQ/4
1, 2, 3, 4
RZQ/8
1, 2, 5
RZQ/6
1, 2, 3, 4
RZQ/6
1, 2, 3, 4
RTT120
60Ω
RTT60Pd120
EO
[0, 0, 1]
RTT60Pu120
RTT60
[0, 1.1]
40Ω
RTT40Pd80
VIL (AC) to VIH (AC)
0.9
1.0
1.6
VOL (DC)
VOM (DC)
VOH (DC)
VOL (DC)
VOM (DC)
VOH (DC)
0.6
0.9
0.9
0.9
0.9
0.6
1.0
1.0
1.0
1.0
1.0
1.0
1.1
1.1
1.4
1.4
1.1
1.1
0.9
1.0
1.6
0.6
0.9
0.9
0.9
0.9
0.6
1.0
1.0
1.0
1.0
1.0
1.0
1.1
1.1
1.4
1.4
1.1
1.1
L
VIL (AC) to VIH (AC)
VOL (DC)
VOM (DC)
VOH (DC)
VOL (DC)
VOM (DC)
VOH (DC)
RTT40Pu80
RTT40
[1, 0, 1]
30Ω
RTT30Pd60
RTT30
[1, 0, 0]
20Ω
RTT20Pd40
0.9
1.0
1.6
0.6
0.9
0.9
0.9
0.9
0.6
1.0
1.0
1.0
1.0
1.0
1.0
1.1
1.1
1.4
1.4
1.1
1.1
VIL (AC) to VIH (AC)
0.9
1.0
1.6
VOL (DC)
VOM (DC)
VOH (DC)
VOL (DC)
VOM (DC)
VOH (DC)
0.6
0.9
0.9
0.9
0.9
0.6
1.0
1.0
1.0
1.0
1.0
1.0
1.1
1.1
1.4
1.4
1.1
1.1
0.9
1.0
RTT20Pu40
RTT20
od
Pr
RTT30Pu60
VIL (AC) to VIH (AC)
VOL (DC)
VOM (DC)
VOH (DC)
VOL (DC)
VOM (DC)
VOH (DC)
VIL (AC) to VIH (AC)
Deviation of VM w.r.t. VDDQ/2, ∆VM
−5
1.6
RZQ/12 1, 2, 5
5
%
1, 2, 5, 6
RTT =
t
uc
Notes: 1. The tolerance limits are specified after calibration with stable voltage and temperature.
For the behavior of the tolerance limits if temperature or voltage changes after calibration, see following
section on voltage and temperature sensitivity.
2. The tolerance limits are specified under the condition that VDDQ = VDD and that VSSQ = VSS.
3. Pull-down and pull-up output resistors are recommended to be calibrated at 0.5 × VDDQ. Other calibration
schemes may be used to achieve the linearity spec shown above, e.g. calibration at 0.2 × VDDQ and 0.8
× VDDQ.
4. Not a specification requirement, but a design guide line.
5. Measurement Definition for RTT:
Apply VIH (AC) to pin under test and measure current I(VIH(AC)), then apply VIL(AC) to pin under test
and measure current I(VIL(AC)) respectively.
VIH( AC) − VIL( AC)
I( VIH( AC)) − I( VIL( AC))
Data Sheet E1375E50 (Ver. 5.0)
27
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
6. Measurement Definition for VM and ∆VM:
Measure voltage (VM) at test pin (midpoint) with no load:
 2 × VM 
- 1 × 100
∆VM = 
 VDDQ 
ODT Temperature and Voltage Sensitivity
If temperature and/or voltage change after calibration, the tolerance limits widen according to the table ODT
Sensitivity Definition and ODT Voltage and Temperature Sensitivity.
∆T = T − T (@calibration); ∆V= VDDQ − VDDQ (@calibration); VDD = VDDQ
Note: dRTTdT and dRTTdV are not subject to production test but are verified by design and characterization.
[ODT Sensitivity Definition]
EO
min.
RTT
max.
Unit
0.9 − dRTTdT × |∆T| - dRTTdV × |∆V| 1.6 + dRTTdT×|∆T| + dRTTdV × |∆V|
RZQ/2, 4, 6, 8, 12
[ODT Voltage and Temperature Sensitivity]
min.
max.
Unit
dRTTdT
0
1.5
%/°C
dRTTdV
0
0.15
%/mV
L
ODT Timing Definitions
Pr
Test Load for ODT Timings
Different than for timing measurements, the reference load for ODT timings are defined in ODT Timing Reference
Load.
VDDQ
DUT
CK, /CK
VTT = VSSQ/2
od
DQ
DQS,
/DQS
RT =25Ω
ODT Timing Reference Load
t
uc
Data Sheet E1375E50 (Ver. 5.0)
28
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
ODT Measurement Definitions
Definitions for tAON, tAONPD, tAOF, tAOFPD and tADC are provided in the following table and subsequent figures.
Symbol
tAON
tAONPD
tAOF
tAOFPD
tADC
Begin Point Definition
Rising edge of CK - /CK defined by the end
point of ODTLon
Rising edge of CK - /CK with ODT being first
registered high
Rising edge of CK - /CK defined by the end
point of ODTLoff
Rising edge of CK - /CK with ODT being first
registered low
Rising edge of CK - /CK defined by the end
point of ODTLcnw, ODTLcwn4 or ODTLcwn8
End Point Definition
Figure
Extrapolated point at VSSQ
Figure a)
Extrapolated point at VSSQ
Figure b)
End point: Extrapolated point at VRTT_Nom
Figure c)
End point: Extrapolated point at VRTT_Nom
Figure d)
End point: Extrapolated point at VRTT_WR
and VRTT_Nom respectively
Figure e)
EO
Reference Settings for ODT Timing Measurements
Measurement reference settings are provided in the following Table.
Measured Parameter RTT_Nom Setting
RTT_WR Setting
VSW1 [V]
VSW2 [V]
tAON
RZQ/4
N/A
0.05
0.10
RZQ/12
N/A
0.10
0.20
tAOF
tAOFPD
N/A
0.05
0.10
N/A
0.10
0.20
RZQ/4
N/A
0.05
0.10
RZQ/12
N/A
0.10
0.20
RZQ/4
N/A
0.05
0.10
RZQ/12
N/A
0.10
0.20
RZQ/2
0.20
0.30
RZQ/12
Pr
tADC
RZQ/4
RZQ/12
L
tAONPD
Note
Begin point: Rising edge of CK - /CK
defined by the end point of ODTLon
CK
od
VTT
/CK
tAON
tSW2
tSW1
VSW2
VSSQ
VSW1
uc
DQ, DM
DQS, /DQS
TDQS, /TDQS
VSSQ
End point: Extrapolated point at VSSQ
a) Definition of tAON
t
Data Sheet E1375E50 (Ver. 5.0)
29
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Begin point: Rising edge of CK - /CK with
ODT being first registered high
CK
VTT
/CK
tAONPD
tSW2
DQ, DM
DQS, /DQS
TDQS, /TDQS
tSW1
VSW2
VSW1
VSSQ
EO
VSSQ
End point: Extrapolated point at VSSQ
b) Definition of tAONPD
Begin point: Rising edge of CK - /CK
defined by the end point of ODTLoff
CK
L
VTT
/CK
tAOF
VRTT_Nom
End point: Extrapolated point at VRTT_Nom
DQ, DM
DQS, /DQS
TDQS, /TDQS
Pr
tSW2
tSW1
VSW2
VSW1
VSSQ
c) Definition of tAOF
od
Begin point: Rising edge of CK - /CK with
ODT being first registered low
CK
VTT
/CK
VRTT_Nom
End point: Extrapolated point at VRTT_Nom
tSW2
DQ, DM
DQS, /DQS
TDQS, /TDQS
uc
tAOFPD
tSW1
VSW2
VSW1
VSSQ
Data Sheet E1375E50 (Ver. 5.0)
30
t
d) Definition of tAOFPD
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Begin point: Rising edge of CK - /CK
defined by the end point of ODTLcnw
Begin point: Rising edge of CK - /CK defined by
the end point of ODTLcwn4 or ODTLcwn8
CK
VTT
/CK
tADC
tADC
VRTT_Nom
VRTT_Nom
TSW21
End point:
DQ, DM
Extrapolated
DQS, /DQS
point at VRTT_Nom
TDQS, /TDQS
TSW11
VSW2
TSW22
EO
TSW12
VSW1
VRTT_Wr
End point: Extrapolated point at VRTT_Wr
VSSQ
e) Definition of tADC
L
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Pr
Data Sheet E1375E50 (Ver. 5.0)
31
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
IDD Measurement Conditions (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V)
In this chapter, IDD and IDDQ measurement conditions such as test load and patterns are defined.
The figure Measurement Setup and Test Load for IDD and IDDQ Measurements shows the setup and test load for
IDD and IDDQ measurements.
• IDD currents (such as IDD0, IDD1, IDD2N, IDD2NT, IDD2P0, IDD2P1, IDD2Q, IDD3N, IDD3P, IDD4R, IDD4W,
IDD5B, IDD6, IDD6ET, IDD6TC and IDD7) are measured as time-averaged currents with all VDD balls of the
DDR3 SDRAM under test tied together. Any IDDQ current is not included in IDD currents.
• IDDQ currents (such as IDDQ2NT and IDDQ4R) are measured as time-averaged currents with all VDDQ balls of
the DDR3 SDRAM under test tied together. Any IDD current is not included in IDDQ currents.
Note: IDDQ values cannot be directly used to calculate I/O power of the DDR3 SDRAM. They can be used to
support correlation of simulated I/O power to actual I/O power as outlined in correlation from simulated channel I/O
power to actual channel I/O power supported by IDDQ measurement.
EO
L
For IDD and IDDQ measurements, the following definitions apply:
• L and 0: VIN ≤ VIL (AC)(max.)
• H and 1: VIN ≥ VIH (AC)(min.)
• FLOATING: is defined as inputs are VREF = VDDQ / 2
• Timings used for IDD and IDDQ measurement-loop patterns are provided in Timings used for IDD and IDDQ
Measurement-Loop Patterns table.
• Basic IDD and IDDQ measurement conditions are described in Basic IDD and IDDQ Measurement Conditions
table.
Note: The IDD and IDDQ measurement-loop patterns need to be executed at least one time before actual IDD or
IDDQ measurement is started.
• Detailed IDD and IDDQ measurement-loop patterns are described in IDD0 Measurement-Loop Pattern table
through IDD7 Measurement-Loop Pattern table.
• IDD Measurements are done after properly initializing the DDR3 SDRAM. This includes but is not limited to setting.
RON = RZQ/7 (34 Ω in MR1);
Qoff = 0B (Output Buffer enabled in MR1);
RTT_Nom = RZQ/6 (40 Ω in MR1);
RTT_WR = RZQ/2 (120 Ω in MR2);
TDQS Feature disabled in MR1
• Define D = {/CS, /RAS, /CAS, /WE} : = {H, L, L, L}
• Define /D = {/CS, /RAS, /CAS, /WE} : = {H, H, H, H}
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Data Sheet E1375E50 (Ver. 5.0)
32
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
IDDQ
IDD
VDD
VDDQ
/RESET
CK, /CK
CKE
/CS
/RAS, /CAS, /WE
DDR3
SDRAM
Address, BA
ODT
ZQ
VSS
DQS, /DQS,
DQ, DM,
TDQS, /TDQS
RTT = 25Ω
VDDQ/Q2
VSSQ
EO
Measurement Setup and Test Load for IDD and IDDQ Measurements
Application specific
memory channel
environment
L
Channel
I/O power
simulation
IDDQ
Test load
IDDQ
simulation
IDDQ
measurement
Pr
Correlation
Correction
Channel I/O power
number
t
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Correlation from Simulated Channel I/O Power to Actual Channel I/O Power
Supported by IDDQ Measurement.
Data Sheet E1375E50 (Ver. 5.0)
33
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Timings used for IDD and IDDQ Measurement-Loop Patterns
Parameter
DDR3-1600
DDR3-1333
10-10-10
8-8-8
11-11-11
DDR3-1066
9-9-9
DDR3-800
7-7-7
8-8-8
5-5-5
6-6-6
Unit
CL
10
11
8
9
7
8
5
6
tCK
tCK min.
1.25
1.25
1.5
1.5
1.875
1.875
2.5
2.5
ns
nRCD min.
10
11
8
9
7
8
5
6
nCK
38
39
32
33
27
28
20
21
nCK
nRAS min.
28
28
24
24
20
20
15
15
nCK
nRP min.
10
11
8
9
7
8
5
6
nCK
nFAW -×4, ×8
24
24
20
20
20
20
16
16
nCK
nFAW -×16
32
32
30
30
27
27
20
20
nCK
nRRD -×4, ×8
5
5
4
4
4
4
4
4
nCK
nRRD -×16
6
6
5
5
6
6
4
4
nCK
nRFC
88
88
74
74
59
59
44
44
nCK
L
EO
nRC min.
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Data Sheet E1375E50 (Ver. 5.0)
34
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Basic IDD and IDDQ Measurement Conditions
Parameter
Symbol
Operating one bank
active precharge
current
Operating one bank
active-read-precharge
current
EO
Precharge standby
current
IDD0
IDD1
IDD2N
Description
L
CKE: H; External clock: on; tCK, nRC, nRAS, CL: see Timings used for IDD and
1
IDDQ Measurement-Loop Patterns table; BL: 8* ; AL: 0; /CS: H between ACT and
PRE; Command, Address, Bank Address Inputs: partially toggling according to
IDD0 Measurement-loop pattern table; Data I/O: FLOATING; DM: stable at 0;
Bank activity: cycling with one bank active at a time: 0,0,1,1,2,2,... (see IDD0
2
Measurement-Loop Pattern table); output buffer and RTT: enabled in MR* ; ODT
signal: stable at 0; pattern details: see IDD0 Measurement-Loop Pattern table
CKE: H; external clock: On; tCK, nRC, nRAS, nRCD, CL: see Timings used for IDD
and IDDQ Measurement-Loop Patterns table; BL: 8(1,7); AL: 0; /CS: H between
ACT, READ and PRE; Command, Address, Bank Address Inputs, data I/O: partially
toggling according to IDD1 Measurement-Loop Pattern table;
DM: stable at 0; bank activity: cycling with one bank active at a time: 0,0,1,1,2,2,...
(see IDD1 Measurement-Loop Pattern table); Output buffer and RTT: enabled in
2
MR* ; ODT Signal: stable at 0; Pattern details: see IDD1 Measurement-Loop
Pattern table
CKE: H; External clock: on; tCK, CL: see Timings used for IDD and IDDQ
1
Measurement-Loop patterns table BL: 8* ; AL: 0; /CS: stable at 1;
Command, Address, Bank address Inputs: partially toggling according to IDD2N
and IDD3N Measurement-Loop Pattern table; data I/O: FLOATING; DM: stable at 0;
2
bank activity: all banks closed; output buffer and RTT: enabled in mode registers* ;
ODT signal: stable at 0; pattern details: see IDD2N and IDD3N Measurement-Loop
Pattern table
CKE: H; External clock: on; tCK, CL: see Timings used for IDD and IDDQ
1
Measurement-Loop Patterns table; BL: 8* ; AL: 0; /CS: stable at 1;
Command, Address, Bank Address Inputs: partially toggling according to IDD2NT
and IDDQ2NT Measurement-Loop Pattern table; data I/O: FLOATING; DM: stable
2
at 0; bank activity: all banks closed; output buffer and RTT: enabled in MR* ; ODT
signal: toggling according to IDD2NT and IDDQ2NT Measurement-Loop pattern
table; pattern details: see IDD2NT and IDDQ2NT Measurement-Loop Pattern table
Same definition like for IDD2NT, however measuring IDDQ current instead of IDD
current
CKE: L; External clock: on; tCK, CL: see Timings used for IDD and IDDQ
1
Measurement-Loop Patterns table; BL: 8* ; AL: 0; /CS: stable at 1;
Command, Address, bank Address inputs: stable at 0; data I/O: FLOATING; DM:
2
stable at 0; bank activity: all banks closed; output buffer and RTT: EMR * ; ODT
3
signal: stable at 0; pecharge power down mode: slow exit*
CKE: L; External clock: on; tCK, CL: see Timings used for IDD and IDDQ
1
Measurement-Loop Patterns table; BL: 8* ; AL: 0; /CS: stable at 1;
Command, Address, Bank Address Inputs: stable at 0; data I/O: FLOATING;
DM:stable at 0; bank activity: all banks closed; output buffer and RTT: enabled in
2
3
MR* ; ODT signal: stable at 0; pecharge power down mode: fast exit*
CKE: H; External clock: On; tCK, CL: see Timings used for IDD and IDDQ
1
Measurement-Loop Patterns table; BL: 8* ; AL: 0; /CS: stable at 1;
Command, Address, Bank Address Inputs: stable at 0; data I/O: FLOATING;
DM: stable at 0;bank activity: all banks closed; output buffer and RTT: enabled in
2
MR* ; ODT signal: stable at 0
Precharge standby
ODT current
IDD2NT
IDDQ2NT
Precharge power-down
current slow exit
IDD2P0
Precharge power-down
current fast exit
IDD2P1
Precharge quiet
standby current
IDD2Q
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Precharge standby
ODT IDDQ current
Data Sheet E1375E50 (Ver. 5.0)
35
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Parameter
Symbol
Active standby current
IDD3N
Active power-down
current
IDD3P
EO
IDD4R
Operating burst read
IDDQ current
IDDQ4R
Operating burst write
current
IDD4W
Burst refresh current
IDD5B
Self refresh current:
normal temperature
range
IDD6
CKE: H; External clock: on; tCK, CL: see Table Timings used for IDD and IDDQ
1
Measurement-Loop Patterns table; BL: 8* ; AL: 0; /CS: stable at 1;
Command, Address, Bank Address Inputs: partially toggling according to IDD2N
and IDD3N Measurement-Loop Pattern; data I/O: FLOATING; DM: stable at 0;
2
bank activity: all banks open; output buffer and RTT: enabled in MR* ;
ODT signal: stable at 0; pattern details: see IDD2N and IDD3N
Measurement-Loop Pattern table
CKE: L; External clock: on; tCK, CL: see Table Timings used for IDD and IDDQ
1
Measurement-Loop Patterns table; BL: 8* ; AL: 0; /CS: stable at 1;
Command, Address, bank address inputs: stable at 0; data I/O: FLOATING;
DM:stable at 0; bank activity: all banks open; output buffer and RTT:
2
enabled in MR* ; ODT signal: stable at 0
CKE: H; External clock: on; tCK, CL: see Timings used for IDD and IDDQ
1, 7
Measurement-Loop Patterns table; BL: 8* ; AL: 0; /CS: H between
READ; Command, Address, Bank Address Inputs: partially toggling according to
IDD4R and IDDQ4R Measurement-Loop Pattern table; data I/O: seamless read
data burst with different data between one burst and the next one according to
IDD4R and IDDQ4R Measurement-Loop Pattern table; DM: stable at 0;
bank activity: all banks open, READ commands cycling through banks:
0,0,1,1,2,2,... (see IDD4R and IDDQ4R Measurement-Loop Pattern table); output
buffer and
2
RTT: enabled in MR* ; ODT signal: stable at 0; pattern details: see IDD4R and
IDDQ4R Measurement-Loop Pattern table
Same definitI/on like for IDD4R, however measuring IDDQ current instead of IDD
current
CKE: H; External clock: on; tCK, CL: see Timings used for IDD and IDDQ
1
Measurement-Loop Patterns table; BL: 8* ; AL: 0; /CS: H between WR; command,
address, bank address inputs: partially toggling according to IDD4W
Measurement-Loop Pattern table; data I/O: seamless write data burst with
different data between one burst and the next one according to IDD4W
Measurement-Loop Pattern table; DM: stable at 0; bank activity: all banks open,
WR commands cycling through banks: 0,0,1,1,2,2,... (see IDD4W Measurement2
Loop Pattern table); output buffer and RTT: enabled in MR* ; ODT signal: stable
at H; pattern details: see IDD4W Measurement-Loop Pattern table
CKE: H; External clock: on; tCK, CL, nRFC: see Timings used for IDD and IDDQ
1
Measurement-Loop Patterns table; BL: 8* ; AL: 0; /CS: H between REF;
Command, Address, Bank Address Inputs: partially toggling according to IDD5B
Measurement-Loop Pattern table; data I/O: FLOATING; DM: stable at 0;
bank activity: REF command every nRFC (IDD5B Measurement-Loop Pattern);
2
output buffer and RTT: enabled in MR* ; ODT signal: stable at 0; pattern
details: see IDD5B Measurement-Loop Pattern table
4
TC: 0 to 85°C; ASR: disabled* ; SRT:
5
Normal* ; CKE: L; External clock: off; CK and /CK: L; CL: see Timings used for
1
IDD and IDDQ Measurement-Loop Patterns table; BL: 8* ;
AL: 0; /CS, command, address, bank address, data I/O: FLOATING; DM: stable
at 0; bank activity: Self-Refresh operatI/On; output buffer and RTT: enabled in
2
MR* ; ODT signal: FLOATING
L
Operating burstr
current
Description
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Data Sheet E1375E50 (Ver. 5.0)
36
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Parameter
Symbol
Description
4
Self refresh current:
extended temperature
range
IDD6ET
Auto Self-Refresh
Current (optional)
IDD6TC
EO
Operating Bank
Interleave Read
Current
IDD7
5
TC: 0 to 95°C; ASR: Disabled* ; SRT: Extended* ; CKE: L; External clock: off; CK and
/CK: L; CL: see Timings used for IDD and IDDQ Measurement-Loop Patterns table;
1
BL: 8* ; AL: 0; /CS, command, address, bank address, data I/O: FLOATING;
DM: stable at 0; bank activity:
2
Extended temperature self-refresh operation; output buffer and RTT: enabled in MR* ;
ODT signal: FLOATING
4
5
TC: 0 to 95°C; ASR: Enabled* ; SRT: Normal* ; CKE: L; External clock: off;
CK and /CK: L; CL: see Table Timings used for IDD and IDDQ Measurement-Loop
1
Patterns table; BL: 8* ; AL: 0; /CS, command, address, bank address, data I/O:
FLOATING; DM: stable at 0; bank activity: Auto self-refresh operation; output buffer
2
and RTT: enabled in MR* ; ODT signal: FLOATNG
CKE: H; External clock: on; tCK, nRC, nRAS, nRCD, nRRD, nFAW, CL: see Timings
used for IDD and IDDQ Measurement-Loop Patterns table;
1
BL: 8* ; AL: CL-1; /CS: H between ACT and READA; command, address, bank address
Inputs: partially toggling according to IDD7 Measurement-Loop Pattern table; data I/O:
read data bursts with different data between one burst and the next one according to
IDD7 Measurement-Loop Pattern table; DM: stable at 0; bank activity: two times
interleaved cycling through banks (0, 1, ...7) with different addressing, see IDD7
2
Measurement-Loop Pattern table; output buffer and RTT: enabled in MR* ;
ODT signal: stable at 0; pattern details: see IDD7 Measurement-Loop Pattern table
L
Notes: 1. Burst Length: BL8 fixed by MRS: MR0 bits [1,0] = [0,0].
2. MR: mode register
Output buffer enable: set MR1 bit A12 = 1 and MR1 bits [5, 1] = [0,1];
RTT_Nom enable: set MR1 bits [9, 6, 2] = [0, 1, 1]; RTT_WR enable: set MR2 bits [10, 9] = [1,0].
3. Precharge power down mode: set MR0 bit A12= 0 for Slow Exit or MR0 bit A12 = 1 for fast exit.
4. Auto self refresh (ASR): set MR2 bit A6 = 0 to disable or 1 to enable feature.
5. Self refresh temperature range (SRT): set MR0 bit A7= 0 for normal or 1 for extended temperature range.
6. Read burst type: nibble sequential, set MR0 bit A3 = 0.
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Data Sheet E1375E50 (Ver. 5.0)
37
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
IDD0 Measurement-Loop Pattern
CK,
/CK
Sub Cycle
-Loop number
CKE
0
Command /CS
/RAS /CAS /WE
ODT BA*
0
ACT 0
0
1
1
0
1, 2
D, D 1
0
0
0
3, 4
/D,
/D
1
1
1
…
Repeat pattern 1...4 until nRAS − 1, truncate if necessary
nRAS
PRE 0
…
Repeat pattern 1...4 until nRC − 1, truncate if necessary
EO
1 × nRC
+0
1 × nRC
+1, 2,
1 × nRC
+ 3, 4
Toggling Static H
1
0
1
0
A11
-A13 A10
A7
-A9
A3
-A6
A0
-A2
Data*
0
00
0
0
0
0

0
0
00
0
0
0
0

0
0
00
0
0
0
0

0
0
0

0
0
3
00
0
ACT 0
0
1
1
0
0
00
0
0
F
0

D, D 1
0
0
0
0
0
00
0
0
F
0

/D,
/D
1
1
1
0
0
00
0
0
F
0

1
…
Repeat pattern nRC + 1,...,4 until 1 × nRC + nRAS − 1, truncate if necessary
1 × nRC
+ nRAS
PRE 0
...
Repeat nRC + 1,...,4 until 2 × nRC − 1, truncate if necessary
1
2 × nRC
Repeat Sub-Loop 0, use BA= 1 instead
2
4 × nRC
Repeat Sub-Loop 0, use BA= 2 instead
0
1
0
0
0
00
0
0
F
0
2

L
6 × nRC
Repeat Sub-Loop 0, use BA= 3 instead
4
8 × nRC
Repeat Sub-Loop 0, use BA= 4 instead
5
10 × nRC Repeat Sub-Loop 0, use BA= 5 instead
6
12 × nRC Repeat Sub-Loop 0, use BA= 6 instead
7
14 × nRC Repeat Sub-Loop 0, use BA= 7 instead
Pr
3
Notes: 1. DM must be driven low all the time. DQS, /DQS are FLOATING.
2. DQ signals are FLOATING.
3. BA: BA0 to BA2.
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Data Sheet E1375E50 (Ver. 5.0)
38
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
IDD1 Measurement-Loop Pattern
CK,
/CK
Sub Cycle
-Loop number
CKE
Command /CS /RAS /CAS /WE
ODT BA*
0
ACT
0
0
1
1
0
1, 2
D, D
1
0
0
0
3, 4
/D, /D 1
1
1
1
…
Repeat pattern 1...4 until nRCD − 1, truncate if necessary
nRCD
READ 0
…
Repeat pattern 1...4 until nRAS − 1, truncate if necessary
nRAS
PRE
…
Repeat pattern 1...4 until nRC − 1, truncate if necessary
EO
1
+
1
+
1
+
0
Toggling Static H
× nRC
0
× nRC
1, 2
× nRC
3, 4
0
1
0
0
1
1
0
A11
-A13 A10
A7
-A9
A3
-A6
A0
-A2
Data*
0
00
0
0
0
0

0
0
00
0
0
0
0

0
0
00
0
0
0
0

0
0
00000000
0
0
0

0
0
0
0
3
00
00
0
0
0
ACT
0
0
1
1
0
0
00
0
0
F
0

D, D
1
0
0
0
0
0
00
0
0
F
0

/D, /D 1
1
1
1
0
0
00
0
0
F
0

Repeat pattern nRC + 1,..., 4 until nRC + nRCD − 1, truncate if necessary
1 × nRC
+ nRCD
READ 0
...
Repeat pattern nRC + 1,..., 4 until nRC +nRAS − 1, truncate if necessary
1 × nRC
+ nRAS
PRE
L
...
0
1
0
0
1
1
0
0
0
0
0
00
00
0
0
0
0
F
0
F
0
Repeat pattern nRC + 1,..., 4 until 2 * nRC − 1, truncate if necessary
2 × nRC
Repeat Sub-Loop 0, use BA= 1 instead
2
4 × nRC
Repeat Sub-Loop 0, use BA= 2 instead
3
6 × nRC
Repeat Sub-Loop 0, use BA= 3 instead
4
8 × nRC
5
10 × nRC Repeat Sub-Loop 0, use BA= 5 instead
6
12 × nRC Repeat Sub-Loop 0, use BA= 6 instead
7
14 × nRC Repeat Sub-Loop 0, use BA= 7 instead
00110011

Pr
…
1
2
Repeat Sub-Loop 0, use BA= 4 instead
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Notes: 1. DM must be driven low all the time. DQS, /DQS are used according to read commands, otherwise
FLOATING.
2. Burst sequence driven on each DQ signal by read command. Outside burst operation, DQ signals
are FLOATING.
3. BA: BA0 to BA2.
Data Sheet E1375E50 (Ver. 5.0)
39
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
IDD2N and IDD3N Measurement-Loop Pattern
CK,
/CK
CKE
Sub Cycle
-Loop number
0
Command /CS
/RAS /CAS /WE ODT BA*
A11
-A13 A10
A7
-A9
A3
-A6
A0
-A2
Data*
0
D
1
0
0
0
0
0
0
0
0
0
0

1
D
1
0
0
0
0
0
0
0
0
0
0

3
2
/D
1
1
1
1
0
0
0
0
0
F
0

3
/D
1
1
1
1
0
0
0
0
0
F
0

4 to 7
Repeat Sub-Loop 0, use BA= 1 instead
8 to 11
Repeat Sub-Loop 0, use BA= 2 instead
3
12 to 15
Repeat Sub-Loop 0, use BA= 3 instead
4
16 to 19
Repeat Sub-Loop 0, use BA= 4 instead
5
20 to 23
Repeat Sub-Loop 0, use BA= 5 instead
6
24 to 27
Repeat Sub-Loop 0, use BA= 6 instead
7
28 to 31
Repeat Sub-Loop 0, use BA= 7 instead
A11
-A13 A10
A7
-A9
A3
-A6
A0
-A2
Data*
1
Toggling Static H 2
2
EO
Notes: 1. DM must be driven low all the time. DQS, /DQS are FLOATING.
2. DQ signals are FLOATING.
3. BA: BA0 to BA2.
IDD2NT and IDDQ2NT Measurement-Loop Pattern
CKE
Sub Cycle
-Loop number
Command /CS
/RAS /CAS /WE ODT BA*
0
D
1
0
0
0
0
0
0
0
0
0
0

1
D
1
0
0
0
0
0
0
0
0
0
0

2
/D
1
1
1
1
0
0
0
0
0
F
0

3
/D
1
1
1
1
0
0
0
0
0
F
0

L
CK,
/CK
0
4 to 7
8 to 11
Pr
1
Toggling Static H 2
3
2
Repeat Sub-Loop 0, but ODT = 0 and BA= 1
Repeat Sub-Loop 0, but ODT = 1 and BA= 2
3
12 to 15
Repeat Sub-Loop 0, but ODT = 1 and BA= 3
4
16 to 19
5
20 to 23
6
24 to 27
Repeat Sub-Loop 0, but ODT = 1 and BA= 6
7
28 to 31
Repeat Sub-Loop 0, but ODT = 1 and BA= 7
Repeat Sub-Loop 0, but ODT = 0 and BA= 4
od
Repeat Sub-Loop 0, but ODT = 0 and BA= 5
Notes: 1. DM must be driven low all the time. DQS, /DQS are FLOATING.
2. DQ signals are FLOATING.
3. BA: BA0 to BA2.
t
uc
Data Sheet E1375E50 (Ver. 5.0)
40
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
IDD4R and IDDQ4R Measurement-Loop Patter
CK,
/CK
CKE
Sub Cycle
Com-Loop number mand
0
Toggling Static H 1
/CS
/RAS /CAS /WE ODT BA*
3
A11
-A13 A10
A7 A3 A0
-A9 -A6 -A2
Data*
2
0
READ 0
1
0
1
0
0
0
0
0
0
0
00000000
1
D
1
0
0
0
0
0
0
0
0
0
0

2, 3
/D, /D
1
1
1
1
0
0
0
0
0
0
0

4
READ 0
1
0
1
0
0
0
0
0
F
0
00110011
5
D
1
0
0
0
0
0
0
0
0
F
0

6, 7
/D, /D
1
1
1
1
0
0
0
0
0
F
0

8 to 15
Repeat Sub-Loop 0, but BA= 1
16 to 23 Repeat Sub-Loop 0, but BA= 2
3
24 to 31 Repeat Sub-Loop 0, but BA= 3
4
32 to 39 Repeat Sub-Loop 0, but BA= 4
5
40 to 47 Repeat Sub-Loop 0, but BA= 5
6
48 to 55 Repeat Sub-Loop 0, but BA= 6
7
56 to 63 Repeat Sub-Loop 0, but BA= 7
EO
2
L
Notes: 1. DM must be driven low all the time. DQS, /DQS are used according to read commands, otherwise
FLOATING.
2. Burst sequence driven on each DQ signal by read command. Outside burst operation, DQ signals
are FLOATING.
3. BA: BA0 to BA2.
t
uc
od
Pr
Data Sheet E1375E50 (Ver. 5.0)
41
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
IDD4W Measurement-Loop Pattern
CK,
/CK
CKE
Sub Cycle
-Loop number
Command
/CS
/RAS /CAS /WE ODT BA*
0
WRIT
0
1
1
D
1
0
0
0
3
A11
A7
-A13 A10 -A9
A3
-A6
A0
-A2
Data*
0
1
0
0
0
0
0
0
00000000
0
1
0
0
0
0
0
0

0
0
0
0
0
0

0
0
0
0
F
0
00110011
2, 3
/D, /D
1
1
1
1
1
4
WRIT
0
1
0
0
1
5
D
1
0
0
0
1
0
0
0
0
F
0

6, 7
/D, /D
1
1
1
1
1
0
0
0
0
F
0

8 to 15
Repeat Sub-Loop 0, but BA= 1
2
16 to 23
Repeat Sub-Loop 0, but BA= 2
3
24 to 31
Repeat Sub-Loop 0, but BA= 3
4
32 to 39
Repeat Sub-Loop 0, but BA= 4
5
40 to 47
Repeat Sub-Loop 0, but BA= 5
6
48 to 55
Repeat Sub-Loop 0, but BA= 6
7
56 to 63
Repeat Sub-Loop 0, but BA= 7
0
Toggling Static H 1
2
EO
L
Notes: 1. DM must be driven low all the time. DQS, /DQS are used according to write commands, otherwise
FLOATING.
2. Burst sequence driven on each DQ signal by write command. Outside burst operation, DQ signals are
FLOATING.
3. BA: BA0 to BA2.
IDD5B Measurement-Loop Pattern
CKE
Sub Cycle
-Loop number
0
0
1, 2
3, 4
5 to 8
9 to 12
1
2
ODT BA*
A11
-A13 A10
A7
-A9
A3
-A6
A0
-A2
Data*
REF
0
0
0
1
1
D
1
0
0
0
1
0
0
0
0
0
0

0
0
0
0
0
0

/D, /D 1
1
1
1
1
0
0
0
0
0
0

3
2
Repeat cycles 1...4, but BA= 1
Repeat cycles 1...4, but BA= 2
Repeat cycles 1...4, but BA= 3
od
13 to 16
Toggling Static H
Command /CS /RAS /CAS /WE
Pr
CK,
/CK
17 to 20
Repeat cycles 1...4, but BA= 4
21 to 24
Repeat cycles 1...4, but BA= 5
25 to 28
Repeat cycles 1...4, but BA= 6
29 to 32
Repeat cycles 1...4, but BA= 7
33 to
Repeat Sub-Loop 1, until nRFC − 1. Truncate, if necessary.
nRFC − 1
t
uc
Notes: 1. DM must be driven low all the time. DQS, /DQS are FLOATING.
2. DQ signals are FLOATING.
3. BA: BA0 to BA2.
Data Sheet E1375E50 (Ver. 5.0)
42
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
IDD7 Measurement-Loop Pattern
CK,
/CK
Sub
-Loop
CKE
0
1
Cycle
number
Command
/CS
/RAS /CAS /WE ODT BA*
0
ACT
0
0
1
1
0
0
00
0
0
0
0

1
READA
0
1
0
1
0
0
00
1
0
0
0
00000000
1
0
0
0
0
0
00
0
0
0
0

2
D
Repeat above D Command until nRRD − 1
nRRD
ACT
0
0
1
1
0
1
00
0
0
F
0
nRRD + 1
READA
0
1
0
1
0
0
00
1
0
F
0
00110011
nRRD + 2
D
1
0
0
0
0
0
00
0
0
F
0

00
0
0
F
0

0

Repeat above D Command until 2 × nRRD - 1
2 × nRRD
Repeat Sub-Loop 0, but BA= 2
3
3 × nRRD
Repeat Sub-Loop 1, but BA= 3
4
4 × nRRD
5
nFAW
EO
…
7
D
9
12
13
0
0
3
Repeat Sub-Loop 0, but BA= 4
nFAW
Repeat Sub-Loop 1, but BA= 5
+ nRRD
nFAW
Repeat Sub-Loop 0, but BA= 6
+ 2 × nRRD
nFAW
Repeat Sub-Loop 1, but BA= 7
+ 3 × nRRD
nFAW
+ 4nRRD
2
+
2
+
× nFAW
0
× nFAW
1
D
1
0
0
0
0
7
00
0
0
F
Assert and repeat above D Command until 2 × nFAW - 1, if necessary
ACT
0
0
1
1
0
1
00
0
0
F
0

READA
0
1
0
1
0
0
00
1
0
F
0
00110011
D
1
0
0
0
0
0
00
0
0
F
0

0
0
0
0

0
0
0
00000000
D
1
0
0
0
0
0
00
0
0
2 × nFAW
+ nRRD + 2 Repeat above D Command until 2 × nFAW + 2 × nRRD − 1
0
0
2 × nFAW
+2
11
0
od
10
0
Pr
Static H
1

Assert and repeat above D Command until nFAW - 1, if necessary
L
8
A11
A7 A3 A0
2
Data*
-A13 A10 -A9 -A6 -A2
…
2
6
Toggling
3
2
+
2
+
Repeat above D Command until 2 × nFAW + nRRD - 1
× nFAW
ACT
nRRD
× nFAW
READA
nRRD + 1
0
0
0
1
1
0
1
1
0
0
0
0
00
00
1
2 × nFAW
Repeat Sub-Loop 10, but BA= 2
+2 × nRRD
2 × nFAW
Repeat Sub-Loop 11, but BA= 3
+ 3 × nRRD
D
1
0
0
0
0
3
00
0
0
0
0

2 × nFAW
+ 4 × nRRD Assert and repeat above D Command until 3 × nFAW − 1, if necessary
15
3 × nFAW
16
17
19
3 ×nFAW
Repeat Sub-Loop 11, but BA= 5
+nRRD
3 × nFAW
Repeat Sub-Loop 10, but BA= 6
+ 2 × nRRD
3 × nFAW
Repeat Sub-Loop 11, but BA= 7
+ 3 × nRRD
t
18
Repeat Sub-Loop 10, but BA= 4
uc
14
D
1
0
0
0
0
7
00
0
0
0
0

3 × nFAW
+ 4 × nRRD Assert and repeat above D Command until 4 × nFAW − 1, if necessary
Data Sheet E1375E50 (Ver. 5.0)
43
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Notes: 1. DM must be driven low all the time. DQS, /DQS are used according to read commands, otherwise
FLOATING.
2. Burst sequence driven on each DQ signal by read command. Outside burst operation,
DQ signals are FLOATING.
3. BA: BA0 to BA2.
L
EO
t
uc
od
Pr
Data Sheet E1375E50 (Ver. 5.0)
44
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Electrical Specifications
DC Characteristics 1 (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V)
Parameter
Symbol
Operating current
(ACT-PRE)
IDD0
Operating current
(ACT-READ-PRE)
IDD1
EO
IDD2P1
Precharge power-down
standby current
IDD2P0
IDD2N
Precharge standby
ODT current
IDD2NT
×8
× 16
max.
max.
max.
1600
1333
1066
800
1600
1333
1066
800
1600
1333
1066
800
1600
1333
1066
800
1600
1333
1066
800
1600
1333
1066
800
1600
1333
1066
800
1600
1333
1066
800
1600
1333
1066
800
1600
1333
1066
800
1600
1333
1066
800
1600
1333
1066
800
1600
1333
1066
800
105
95
85
75
120
110
100
90
45
40
35
30
15
14
13
12
65
60
55
50
65
60
55
50
60
55
50
45
45
40
35
30
75
65
60
50
230
200
160
130
240
210
170
140
280
270
260
250
350
310
270
240
105
95
85
75
120
110
100
90
45
40
35
30
15
14
13
12
65
60
55
50
65
60
55
50
60
55
50
45
45
40
35
30
75
65
60
50
230
200
160
130
240
210
170
140
280
270
260
250
350
310
270
240
115
105
95
80
145
125
115
100
45
40
35
30
15
14
13
12
65
60
55
50
65
60
55
50
60
55
50
45
45
40
35
30
85
75
65
55
280
240
190
150
330
290
230
190
280
270
260
250
350
310
270
240
L
Precharge standby
current
×4
Data rate
(Mbps)
Active standby current
IDD3N
Operating current
(Burst read operating)
IDD4R
Operating current
(Burst write operating)
IDD4W
Burst refresh current
IDD5B
All bank interleave read
current
IDD7
mA
mA
mA
Fast PD Exit
mA
Slow PD Exit
mA
mA
mA
mA
45
mA
mA
mA
mA
t
Data Sheet E1375E50 (Ver. 5.0)
mA
uc
IDD3P
Notes
od
Active power-down
current
(Always fast exit)
Pr
Precharge quiet standby
IDD2Q
current
Unit
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Self-Refresh Current (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V)
Parameter
Symbol
Grade
Self-refresh current
normal temperature
IDD6
range
Self-refresh current
extended temperature
IDD6ET
range
Auto self-refresh current
IDD6TC
(optional)
×4
×8
× 16
max.
max.
max.
Unit
10
10
10
mA
18
18
18
mA



mA
Notes
EO
DC Characteristics 2 (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V)
Parameter
Symbol
Value
Unit
Notes
Input leakage current
ILI
2
µA
VDD ≥ VIN ≥ VSS
Output leakage current
ILO
5
µA
VDDQ ≥ VOUT ≥ VSS
L
t
uc
od
Pr
Data Sheet E1375E50 (Ver. 5.0)
46
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Pin Capacitance (TC = 25°C, VDD, VDDQ = 1.5V ± 0.075V)
Parameter
Symbol
Input pin capacitance, CK and /CK
DDR3-1600, 1333
CCK
Pins
DDR3-1066, 800
Delta input pin capacitance, CK and /CK
DDR3-1600, 1333
CK, /CK
CDCK
DDR3-1066, 800
Input pin capacitance, control pins
DDR3-1600, 1333
CIN_CTRL
/CS, CKE, ODT
DDR3-1066, 800
EO
Input pin capacitance, address and
command pins
DDR3-1600, 1333
CIN_ADD_CMD
/RAS, /CAS, /WE,
Address
DDR3-1066, 800
Delta input pin capacitance, control pins
DDR3-1600, 1333
CDIN_CTRL
/CS, CKE, ODT
DDR3-1066, 800
Delta input pin capacitance, address and
command pins
CDIN_ADD_CMD
DDR3-1600, 1333
/RAS, /CAS, /WE,
Address
DDR3-1066, 800
DDR3-1333
L
Input/output pin capacitance
DDR3-1600
CIO
DQ, DQS, /DQS,
TDQS, /TDQS
DM
DDR3-1066, 800
DDR3-1066, 800
Delta input/output pin capacitance
DDR3-1600, 1333
DDR3-1066, 800
CDIO
Pr
Delta input/output pin capacitance
DDR3-1600, 1333
Input/output pin capacitance of ZQ
CDDQS
DQS, /DQS
CZQ
ZQ
min.
max.
Unit
Notes
0.8
1.4
pF
1, 3
0.8
1.6
pF
1, 3
0
0.15
pF
1, 2
0
0.15
pF
1, 2
0.75
1.3
pF
1
0.75
1.5
pF
1
0.75
1.3
pF
1
0.75
1.5
pF
1
−0.4
0.2
pF
1, 4
−0.5
0.3
pF
1, 4
−0.4
0.4
pF
1, 5
−0.5
0.5
pF
1, 5
1.5
2.3
pF
1, 6
1.5
2.5
pF
1, 6
1.5
3.0
pF
1, 6
−0.5
0.3
pF
1, 7, 8
−0.5
0.3
pF
1, 7, 8
0
0.15
pF
1, 10
0
0.2
pF
1, 10

3
pF
1, 9
t
uc
od
Notes: 1. VDD, VDDQ, VSS, VSSQ applied and all other pins (except the pin under test) floating.
VDD = VDDQ =1.5V, VBIAS=VDD/2.
2. Absolute value of CCK(CK-pin) − CCK(/CK-pin).
3. CCK (min.) will be equal to CIN (min.)
4. CDIN_CTRL = CIN_CTRL − 0.5 × (CCK(CK-pin) + CCK(/CK-pin))
5. CDIN_ADD_CMD = CIN_ADD_CMD − 0.5 × (CCK(CK-pin) + CCK(/CK-pin))
6. Although the DM, TDQS and /TDQS pins have different functions, the loading matches DQ and DQS.
7. DQ should be in high impedance state.
8. CDIO = CIO (DQ, DM) −0.5 × (CIO(DQS-pin) + CIO(/DQS-pin)).
9. Maximum external load capacitance on ZQ pin: 5pF.
10 Absolute value of CIO(DQS) − CIO(/DQS).
Data Sheet E1375E50 (Ver. 5.0)
47
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Standard Speed Bins
[DDR3-1600 Speed Bins]
Speed Bin
CL-tRCD-tRP
/CAS write
latency
Symbol
DDR3-1600J
DDR3-1600K
10-10-10
11-11-11
max.
min.
max.
Unit
12.5
20
13.75
20
ns
tRCD
12.5

13.75

ns
tRP
12.5

13.75

ns
tRC
47.5

48.75

ns
tRAS
35
9 × tREFI
35
9 × tREFI
ns
9
CWL = 5
2.5
3.3
Reserved
Reserved
ns
1, 2, 3,
4, 8
CWL = 6, 7, 8
Reserved
Reserved
Reserved
Reserved
ns
4
CWL = 5
2.5
3.3
2.5
3.3
ns
1, 2, 3, 8
CWL = 6
Reserved
Reserved
Reserved
Reserved
ns
1, 2, 3,
4, 8
EO
min.
tAA
tCK (avg)@CL=5
tCK (avg)@CL=6
tCK (avg)@CL=7
CWL = 7, 8
Reserved
Reserved
Reserved
Reserved
ns
4
CWL = 5
Reserved
Reserved
Reserved
Reserved
ns
4
CWL = 6
1.875
< 2.5
Reserved
Reserved
ns
1, 2, 3, 4,
8
CWL = 7
Reserved
Reserved
Reserved
Reserved
ns
1, 2, 3, 4
CWL = 8
Reserved
Reserved
Reserved
Reserved
ns
1, 2, 3, 4
CWL = 5
Reserved
Reserved
Reserved
Reserved
ns
4
CWL = 6
1.875
< 2.5
1.875
< 2.5
ns
1, 2, 3, 8
Reserved
ns
1, 2, 3, 4
L
tCK (avg)@CL=8
CWL = 8
CWL = 5, 6
CWL= 7
CWL= 8
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
ns
1, 2, 3, 4
Reserved
Reserved
Reserved
Reserved
ns
4
1.5
< 1.875
Reserved
Reserved
ns
1, 2, 3, 4
Reserved
Reserved
Reserved
Reserved
ns
1, 2, 3, 4
Reserved
Reserved
Reserved
Reserved
ns
4
1.5
< 1.875
ns
1, 2, 3
od
tCK (avg)@CL=10 CWL = 5, 6
Pr
CWL = 7
tCK (avg)@CL=9
Notes
< 1.875 85
CWL= 7
1.5
CWL= 8
1.25
< 1.5
Reserved
Reserved
ns
5
Reserved
Reserved
Reserved
Reserved
ns
4
CWL= 8
1.25
< 1.5
1.25
< 1.5
ns
1, 2, 3
CWL= 8
Optional
Optional
1.25
< 1.5
tCK (avg)@CL=11 CWL = 5, 6, 7
5, 6, 7, 8, 9, 10
5, 6, 7, 8
5
6, 8, 10, 11
nCK
5, 6, 7, 8
nCK
t
uc
Supported CL
settings
Supported CWL
settings
Data Sheet E1375E50 (Ver. 5.0)
48
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
[DDR3-1333 Speed Bins]
Speed Bin
CL-tRCD-tRP
/CAS write
latency
Symbol
DDR3-1333G
DDR3-1333H
8-8-8
9-9-9
min.
max.
min.
tAA
12
20
13.5
20
ns
tRCD
12

13.5

ns
tRP
12

13.5

ns
tRC
48.0

49.5

ns
tRAS
36
9 × tREFI
36
9 × tREFI
ns
tCK (avg)@CL=5
tCK (avg)@CL=7
tCK (avg)@CL=8
tCK (avg)@CL=10
Notes
9
CWL = 5
2.5
3.3
Reserved
Reserved
ns
1, 2, 3, 4, 7
Reserved
Reserved
Reserved
Reserved
ns
4
CWL = 5
2.5
3.3
2.5
3.3
ns
1, 2, 3, 7
CWL = 6
Reserved
Reserved
Reserved
Reserved
ns
1, 2, 3, 4, 7
CWL = 7
Reserved
Reserved
Reserved
Reserved
ns
4
CWL = 5
Reserved
Reserved
Reserved
Reserved
ns
4
CWL = 6
1.875
< 2.5
Reserved
Reserved
ns
1, 2, 3, 4, 7
CWL = 7
Reserved
Reserved
Reserved
Reserved
ns
1, 2, 3, 4
CWL = 5
Reserved
Reserved
Reserved
Reserved
ns
4
CWL = 6
1.875
< 2.5
1.875
< 2.5
ns
1, 2, 3, 7
CWL = 7
1.5
< 1.875
Reserved
Reserved
ns
1, 2, 3, 4
CWL = 5, 6
Reserved
Reserved
Reserved
Reserved
ns
4
L
tCK (avg)@CL=9
Unit
CWL = 6, 7
EO
tCK (avg)@CL=6
max.
CWL= 7
1.5
< 1.875
< 1.5
< 1.875
ns
1, 2, 3, 4
CWL = 5, 6
Reserved
Reserved
Reserved
Reserved
ns
4
CWL= 7
Supported CL
settings
Supported CWL
settings
Pr
CWL= 7
1.5
< 1.875
1.5
< 1.875
ns
1, 2, 3
Optional
Optional
Optional
Optional
ns
5
5, 6, 7, 8, 9, 10
6, 8, 9, 10
nCK
5, 6, 7
5, 6, 7
nCK
t
uc
od
Data Sheet E1375E50 (Ver. 5.0)
49
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
[DDR3-1066 Speed Bins]
Speed Bin
DDR3-1066F
CL-tRCD-tRP
DDR3-1066G
7-7-7
/CAS write
latency
Symbol
min.
8-8-8
max.
min.
max.
Unit
Notes
tAA
13.125
20
15
20
ns
tRCD
13.125

15

ns
tRP
13.125

15

ns
tRC
50.625

52.50

ns
tRAS
37.5
9 × tREFI
37.5
9 × tREFI
ns
9
CWL = 5
Reserved
Reserved
Reserved
Reserved
ns
1, 2, 3, 4, 6
CWL = 6
Reserved
Reserved
Reserved
Reserved
ns
4
CWL = 5
2.5
3.3
2.5
3.3
ns
1, 2, 3, 6
CWL = 6
Reserved
Reserved
Reserved
Reserved
ns
1, 2, 3, 4
tCK (avg)@CL=5
EO
tCK (avg)@CL=6
tCK (avg)@CL=7
tCK (avg)@CL=8
CWL = 5
Reserved
Reserved
Reserved
Reserved
ns
4
CWL = 6
1.875
< 2.5
Reserved
Reserved
ns
1, 2, 3, 4
CWL = 5
Reserved
Reserved
Reserved
Reserved
ns
4
CWL = 6
1.875
< 2.5
1.875
< 2.5
ns
1, 2, 3
Supported CL settings
6, 7, 8
L
Supported CWL settings
5, 6
6, 8
nCK
5, 6
nCK
[DDR3-800 Speed Bins]
Speed Bin
Symbol
DDR3-800E
5-5-5
6-6-6
Pr
CL-tRCD-tRP
DDR3-800F
/CAS write
latency
min.
tAA
tRCD
tRP
tRAS
min.
max.
Unit
12.5
20
15
20
ns
12.5

15

ns
12.5

15

ns
Notes
50

52.5

ns
37.5
9 × tREFI
37.5
9 × tREFI
ns
9
od
tRC
max.
tCK (avg)@CL=5
CWL = 5
2.5
3.3
Reserved
Reserved
ns
1, 2, 3, 4
tCK (avg)@CL=6
CWL = 5
2.5
3.3
2.5
3.3
ns
1, 2, 3
Supported CL settings
5, 6
Supported CWL
settings
5
nCK
5
nCK
The CL setting and CWL setting result in tCK (avg) (min.) and tCK (avg) (max.) requirements. When
making a selection of tCK (avg), both need to be fulfilled: Requirements from CL setting as well as
requirements from CWL setting.
2. tCK (avg) (min.) limits: Since /CAS latency is not purely analog - data and strobe output are synchronized
by the DLL - all possible intermediate frequencies may not be guaranteed. An application should use the
next smaller JEDEC standard tCK (avg) value (2.5, 1.875, 1.5, or 1.25ns) when calculating
CL (nCK) = tAA (ns) / tCK (avg)(ns), rounding up to the next ‘Supported CL’.
3. tCK (avg) (max.) limits: Calculate tCK (avg) + tAA (max.)/CL selected and round the resulting tCK (avg)
down to the next valid speed bin (i.e. 3.3ns or 2.5ns or 1.875ns or 1.25ns). This result is tCK (avg) (max.)
corresponding to CL selected.
t
uc
Notes: 1
6
Data Sheet E1375E50 (Ver. 5.0)
50
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
4. ‘Reserved’ settings are not allowed. User must program a different value.
5. 'Optional' settings allow certain devices in the industry to support this setting, however, it is not a
mandatory feature.
6. Any DDR3-1066 speed bin also supports functional operation at lower frequencies as shown in the table
DDR3-1066 Speed Bins which are not subject to production tests but verified by design/characterization.
7. Any DDR3-1333 speed bin also supports functional operation at lower frequencies as shown in the table
DDR3-1333 Speed Bins which is not subject to production tests but verified by design/characterization.
8 Any DDR3-1600 speed bin also supports functional operation at lower frequencies as shown in the table
DDR3-1600 Speed Bins which is not subject to production tests but verified by design/characterization.
9. tREFI depends on operating case temperature (TC).
L
EO
t
uc
od
Pr
Data Sheet E1375E50 (Ver. 5.0)
51
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
AC Characteristics (TC = 0°C to +85°C, VDD, VDDQ = 1.5V ± 0.075V, VSS, VSSQ = 0V)
• New units tCK(avg) and nCK, are introduced in DDR3.
tCK(avg): actual tCK(avg) of the input clock under operation.
nCK: one clock cycle of the input clock, counting the actual clock edges.
AC Characteristics [DDR3-1600, 1333]
Data rate (Mbps)
-GL, -GN
-DG, -DJ
1600
1333
Symbol
min.
max.
min.
max.
Unit
Average clock cycle time
tCK (avg)
1250
3333
1500
3333
ps
Minimum clock cycle time
(DLL-off mode)
tCK (DLL-off)
8

8

ns
Average CK high-level width
tCH (avg)
0.47
0.53
0.47
0.53
tCK (avg)
Average CK low-level width
tCL (avg)
0.47
0.53
0.47
0.53
tCK (avg)
12.5 (GL)
13.75 (GN)
12.5 (GL)
13.75 (GN)
47.5 (GL)
48.75 (GN)
tRCD
Precharge command period
tRP

Active to active/auto-refresh
command time
tRC
Active to precharge command
tRAS
35
Active bank A to active bank B
command period
(x4)
Active bank A to active bank B
command period
(x8)
Active bank A to active bank B
command period
(x16)
Four active window
(x4)
tRRD
6
12 (DG)
13.5 (DJ)
12 (DG)
13.5 (DJ)
48 (DG)
49.5 (DJ)

ns
26

ns
26

ns
26
9×
tREFI
36
9×
tREFI
ns
26
6

6

ns
26, 27
tRRD
4

4

nCK
26, 27
tRRD
6

6

ns
26, 27
tRRD
4

4

nCK
26, 27
tRRD
7.5

7.5

ns
26, 27
tRRD
4

4

nCK
26, 27
tFAW
30

30

ns
26
tFAW
30

30

ns
26
tFAW
40

45

ns
26
tIH (base)
120

140

ps
16, 23
tIS (base)
45

65

ps
16, 23
tIS (base)
AC150
45 + 125

65 + 125

ps
16, 23,
31
tDH (base)
45

65

ps
17, 25
tDS (base)
10

30

ps
17, 25
tIPW
560

620

ps
32
tDIPW
360

400

ps
32
DQ high-impedance time
tHZ (DQ)

225

250
ps
DQ low-impedance time
tLZ (DQ)
−450
225
−500
250

225

250
ps
L
Active to read or write
command delay
Notes
t
EO
Parameter
(x16)
Data Sheet E1375E50 (Ver. 5.0)
52
uc
DQS, /DQS high-impedance time
tHZ (DQS)
(RL + BL/2 reference)
od
Address and control input hold
time
(VIH/VIL (DC) levels)
Address and control input
setup time
(VIH/VIL (AC) levels)
Address and control input
setup time
(VIH/VIL (AC150) levels)
DQ and DM input hold time
(VIH/VIL (DC) levels)
DQ and DM input setup time
(VIH/VIL (AC) levels)
Control and Address input pulse
width for each input
DQ and DM input pulse width for
each input

Pr
(x8)

ps
12,
14,
12,
14,
12,
14,
13,
37
13,
37
13,
37
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Data rate (Mbps)
Parameter
Symbol
DQS, /DQS low-impedance time
tLZ (DQS)
(RL − 1 reference)
DQS, /DQS to DQ skew,
tDQSQ
per group, per access
-GL, -GN
-DG, -DJ
1600
1333
min.
max.
min.
max.
Unit
Notes
−450
225
−500
250
ps
12, 13,
14, 37

100

125
ps
12, 13
tCCD
4

4

nCK
tQH
0.38

0.38

tCK (avg)
tDQSCK
−225
225
−255
255
ps
tDQSS
−0.27
0.27
−0.25
0.25
tCK (avg) 24
tDSH
0.18

0.2

tCK (avg) 24, 36
tDSS
0.18

0.2

tCK (avg) 24, 36
DQS input high pulse width
tDQSH
0.45
0.55
0.45
0.55
tCK (avg) 34, 35
DQS input low pulse width
tDQSL
0.45
0.55
0.45
0.55
tCK (avg) 33, 35
DQS output high time
tQSH
0.40

0.40

tCK (avg)
DQS output low time
tQSL
0.40

0.40

tMRD
4

4

nCK
tMOD
15

15

ns
27
tMOD
12

12

nCK
27
/CAS to /CAS command delay
L
EO
DQ output hold time from
DQS, /DQS
DQS, /DQS rising edge output
access time from rising CK, /CK
DQS latching rising transitions
to associated clock edges
DQS falling edge hold time from
rising CK
DQS falling edge setup time to
rising CK
Mode register set command
cycle time
Mode register set command
update delay
Read postamble
Write preamble
Write postamble
Write recovery time

0.9

tRPST
0.3

0.3

tWPRE
0.9

0.9

tCK (avg) 1
tWPST
0.3

0.3

tCK (avg) 1
tWR
15

15

ns
tDAL
WR + RU

(tRP/tCK (avg))
tMPRR
1
tRTW

RL + tCCD/2
+ 2nCK − WL
RL + tCCD
+ 2nCK − WL
tRTW
Internal write to read
command delay
tWTR
7.5
tWTR
WR + RU

(tRP/tCK (avg))
nCK

nCK


1
RL + tCCD/2
+ 2nCK − WL
RL + tCCD
+ 2nCK − WL
26
29


18, 26,
27
18, 26,
27

7.5

ns
4

4

nCK
tRTP
7.5

7.5

ns
26, 27
tRTP
4

4

nCK
26, 27
tRAP
tRCD min

tRCD min
uc
Active to READ with auto
precharge command delay
1, 19,
tCK (avg)
38
11, 12,
tCK (avg)
13, 38
0.9
(BL8MRS, BL8OTF)
Internal read to precharge
command delay
12, 13,
38
12, 13,
tCK (avg)
38
tRPRE
od
Auto precharge write recovery
+ precharge time
Multi-Purpose register
recovery time
Read to write command delay
(BC4MRS, BC4OTF)
Pr
Read preamble
12, 13,
38
12, 13,
37

28
t
Data Sheet E1375E50 (Ver. 5.0)
53
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Data rate (Mbps)
Parameter
Minimum CKE low width for selfrefresh entry to exit timing
Valid clock requirement after selfrefresh entry or power-down entry
-DG, -DJ
1600
1333
Symbol
min.
max.
min.
max.
tCKESR
tCKE (min.)
+1nCK

tCKE (min.)
+1nCK

tCKSRE
10

10
tCKSRE
5

5
10

tCKSRX
5
tXS
tRFC (min.)
+ 10
tXS
Valid clock requirement before
tCKSRX
self-refresh exit or power-down exit
EO
Exit self-refresh to commands not
requiring a locked DLL
-GL, -GN
Exit self-refresh to commands
tXSDLL
requiring a locked DLL
Auto-refresh to active/auto-refresh
tRFC
command time
Average periodic refresh interval
tREFI
(0°C ≤ TC ≤ +85°C)
Unit
Notes
ns
27

nCK
27
10

ns
27

5

nCK
27

tRFC (min.)
+ 10

ns
27
5

5

nCK
27
tDLLK (min.)

tDLLK (min.)

nCK
110

110

ns

7.8

7.8
µs

tREFI

3.9

3.9
µs
tCKE
5

5.625

ns
27
tCKE
3

3

nCK
27
tRFC (min.)+10

tRFC (min.)+10 
ns
27
tXPR
5

5

nCK
27
tDLLK
512

512

nCK
tPD
L
(+85°C < TC ≤ +95°C)
CKE minimum pulse width
(high and low pulse width)
Exit reset from CKE high to a valid
tXPR
command
Pr
DLL locking time
tCKE (min.)
9 × tREFI tCKE (min.)
9 × tREFI
Exit precharge power-down with
DLL frozen to commands requiring tXPDLL
a locked DLL
24

24

ns
2
tXPDLL
10

10

nCK
2
Power-down entry to exit time
6
tXP
3
tCPDED
1
tACTPDEN
1
tPRPDEN
6

ns
27

3

nCK
27

1

nCK

1

nCK
1

1

nCK
tRDPDEN
RL + 4 + 1

RL + 4 + 1

nCK
tWRPDEN
WL + 4 +
tWR/tCK (avg)

WL + 4 +
tWR/tCK (avg)

nCK
9
tWRPDEN
WL + 2 +
tWR/tCK (avg)

WL + 2 +
tWR/tCK (avg)

nCK
9
Data Sheet E1375E50 (Ver. 5.0)
54
20
20
t
(BC4MRS)

uc
Command pass disable/enable
delay
Timing of last ACT command to
power-down entry
Timing of last PRE command to
power-down entry
Timing of last READ/READA
command to power-down entry
Timing of last WRIT command to
power-down entry
(BL8MRS, BL8OTF, BC4OTF)
od
Exit power-down with DLL on to
any valid command; Exit precharge
tXP
power- down with DLL frozen to
commands not requiring a locked
DLL
15
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Data rate (Mbps)
-GL, -GN
-DG, -DJ
1600
1333
Parameter
Symbol
min.
max.
min.
max.
Unit
Notes
Timing of last WRITA command to
power-down entry
(BL8MRS, BL8OTF, BC4OTF)
tWRAPDEN
WL + 4 +
WR + 1

WL + 4 +
WR + 1

nCK
10
(BC4MRS)
tWRAPDEN
WL + 2 +
WR + 1

WL + 2 +
WR + 1

nCK
10
tREFPDEN
1

1

nCK
20, 21

tMOD (min.)

Timing of last REF command to
power-down entry
Timing of last MRS command to
power-down entry
tMRSPDEN tMOD (min.)
L
EO
t
uc
od
Pr
Data Sheet E1375E50 (Ver. 5.0)
55
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
ODT AC Electrical Characteristics [DDR3-1600, 1333]
Data rate (Mbps)
-GL, -GN
-DG, -DJ
1600
1333
Parameter
Symbol
min.
max.
min.
max.
Unit
Notes
RTT turn-on
tAON
−225
225
−250
250
ps
7, 12, 37
tAONPD
2
8.5
2
8.5
ns
tAOF
0.3
0.7
0.3
0.7
tCK (avg)
tAOFPD
2
8.5
2
8.5
ns
tANPD
WL – 1.0

WL – 1.0

nCK
ODT turn-on Latency
ODTLon
WL – 2
WL – 2
WL – 2.0
WL – 2.0
nCK
ODT turn-off Latency
ODTLoff
WL – 2
WL – 2
WL – 2.0
WL – 2.0
nCK
ODTLcnw
WL – 2
WL – 2
WL – 2.0
WL – 2.0
nCK
ODTLcwn4 
4 + ODTLoff

4 + ODTLoff
nCK
ODTLcwn8 
6 + ODTLoff

6 + ODTLoff
nCK
Asynchronous RTT turn-on delay
(power-down with DLL frozen)
RTT_Nom and RTT_WR turn-off
time from ODTLoff reference
Asynchronous RTT turn-off delay
(power-down with DLL frozen)
ODT to power-down entry/exit
latency
EO
L
ODT Latency for changing from
RTT_Nom to RTT_WR
ODT Latency for change from
RTT_WR to RTT_Nom
(BC4)
ODT Latency for change from
RTT_WR to RTT_Nom
(BL8)
ODT high time without WRIT
command or with WRIT
command and BC4
ODT high time with WRIT
command and BL8
Power-up and reset calibration
time
Normal operation full calibration
time
Normal operation short
calibration time
4

4

nCK
ODTH8
6

6

nCK
tADC
0.3
0.7
0.3
0.7
tCK (avg)
tZQinit
512

512

nCK
tZQoper
256

256

nCK
tZQCS
64

64

nCK
Write Leveling Characteristics [DDR3-1600, 1333]
Parameter
od
Pr
RTT dynamic change skew
ODTH4
-GL, -GN
-DG, -DJ
1600
1333
min.
tWLMRD
40
12, 37
30
min.
max.
Unit
Notes

40

nCK
3
tWLDQSEN 25

25
tWLS
165

195
tWLH
165

195
Write leveling output delay
tWLO
0
7.5
0
Write leveling output error
tWLOE
0
2
0
56

nCK

ps

ps
9
ns
2
ns
3
t
Data Sheet E1375E50 (Ver. 5.0)
uc
max.
First DQS pulse rising edge after
write leveling mode is
programmed
DQS, /DQS delay after write
leveling mode is programmed
Write leveling setup time from
rising CK, /CK crossing to rising
DQS, /DQS crossing
Write leveling hold time from
rising DQS, /DQS crossing to
rising CK, /CK crossing
Symbol
8, 12, 37
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
AC Characteristics [DDR3-1066, 800]
Data rate (Mbps)
-AE, -AG
-8A, -8C
1066
800
Parameter
Symbol
min.
max.
min.
max.
Unit
Clock cycle time Average CL = X
tCK(avg)
1875
3333
2500
3333
ps
Minimum clock cycle time
(DLL-off mode)
tCK
(DLL-off)
8

8

ns
Average duty cycle high-level
tCH (avg)
0.47
0.53
0.47
0.53
tCK (avg)
Average duty cycle low-level
tCL (avg)
0.47
0.53
0.47
0.53
tCK (avg)
tRCD
Precharge command period
tRP
Active to active/auto-refresh
command time
tRC
Active to precharge command
Active bank A to active bank B
command period
EO
Active to read or write
command delay
(x4/x8)
Active bank A to active bank B
command period
Four active window
(x4/x8)
(x16)

tRAS
37.5
tRRD

ns
26

ns
26

ns
26
9×
tREFI
37.5
9×
tREFI
ns
26
7.5

10

ns
26, 27
tRRD
4

4

nCK
26, 27
tRRD
10

10

ns
26, 27
tRRD
4

4

nCK
26, 27
tFAW
37.5

40

ns
26
tFAW
50

50

ns
26
tIH (base)
200

275

ps
16, 23


Pr
Address and control input hold time
(VIH/VIL (DC) levels)
Address and control input
setup time
(VIH/VIL (AC) levels)
Address and control input
setup time
(VIH/VIL (AC150) levels)
DQ and DM input hold time
(VIH/VIL (DC) levels)
DQ and DM input setup time
(VIH/VIL (AC) levels)
Control and Address input pulse
width
for each input
DQ and DM input pulse width for
each input
6
12.5 (8A)
15 (8C)
12.5 (8A)
15 (8C)
50 (8A)
52.5 (8C)
L
(x16)
13.1 (AE)
15 (AG)
13.1 (AE)
15 (AG)
50.6 (AE)
52.5 (AG)
Notes
125

200

ps
16, 23
tIS (base)
AC150
125 + 150

200 + 150

ps
16, 23,
31
tDH (base)
100

150

ps
17, 25
tDS (base)
25
tIPW
780
tDIPW
490
DQ high-impedance time
tHZ (DQ)

DQ low-impedance time
tLZ (DQ)
od
tIS (base)

75

ps
17, 25

900

ps
32

600

ps
32
300

400
ps
−600
300
−800
400
ps
400
ps
uc
tHZ (DQS)

300

tLZ (DQS)
−600
300
−800
400
ps
tDQSQ

150

200
ps
/CAS to /CAS command delay
tCCD
4

4

DQ output hold time from
DQS, /DQS
tQH
0.38

0.38

57
13,
37
13,
37
13,
37
13,
37
12, 13
t
DQS, /DQS high-impedance time
(RL + BL/2 reference)
DQS, /DQS low-impedance time
(RL − 1 reference)
DQS, /DQS -DQ skew, per group,
per access
Data Sheet E1375E50 (Ver. 5.0)
12,
14,
12,
14,
12,
14,
12,
14,
nCK
tCK (avg)
12, 13,
38
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Data rate (Mbps)
Parameter
Symbol
DQS, /DQS rising edge output
access time from rising CK, /CK
DQS latching rising transitions to
associated clock edges
DQS falling edge hold time from
rising CK
DQS falling edge setup time to
rising CK
-AE, -AG
-8A, -8C
1066
800
min.
max.
min.
max.
Unit
Notes
12, 13,
37
−300
+300
−400
+400
ps
tDQSS
−0.25
0.25
−0.25
0.25
tCK (avg) 24
tDSH
0.2

0.2

tCK (avg) 24, 36
tDSS
0.2

0.2

tCK (avg) 24, 36
DQS input high pulse width
tDQSH
0.45
0.55
0.45
0.55
tCK (avg) 34, 35
DQS input low pulse width
tDQSL
0.45
0.55
0.45
0.55
tCK (avg) 33, 35
DQS output high time
tQSH
0.38

0.38

tCK (avg)
DQS output low time
tQSL
0.38

0.38

tMRD
4

4

nCK
tMOD
15

15

ns
27
tMOD
12

12

nCK
27
tRPRE
0.9

0.9

tCK (avg)
0.3

0.3

EO
tDQSCK
Mode register set command
cycle time
Mode register set command
update delay
Read preamble
L
Read postamble
tRPST
12, 13,
38
12, 13,
tCK (avg)
38
1, 19,
38
11, 12,
tCK (avg)
13, 38
0.9

0.9

tCK (avg) 1
tWPST
0.3

0.3

tCK (avg) 1
Write recovery time
tWR
15

Auto precharge write recovery
+ precharge time
Multi-Purpose register
recovery time
Read to write command delay
(BC4MRS, BC4OTF)
(BL8MRS, BL8OTF)
Pr
tWPRE
Write postamble
Write preamble
Internal read to precharge
command delay
1
tRTW
tRTW

RL + tCCD/2
+ 2nCK − WL
RL + tCCD
+ 2nCK − WL



ns

nCK
1

nCK
RL + tCCD/2
+ 2nCK − WL
RL + tCCD +
2nCK − WL
26
29


18, 26,
27
18, 26,
27

7.5

ns

4

nCK

7.5

ns
26, 27

4

nCK
26, 27
tRCD min

tRCD min

tCKESR
tCKE (min.)
+1nCK

tCKE (min.)
+1nCK

tCKSRE
10

10

ns
27
tCKSRE
5

5

nCK
27
10

10

ns
27
5

5
tWTR
7.5
tWTR
4
tRTP
7.5
tRTP
4
tRAP
Valid clock requirement before
tCKSRX
self-refresh exit or power-down exit
Data Sheet E1375E50 (Ver. 5.0)
58

t
tCKSRX
28
uc
Active to READ with auto
precharge command delay
Minimum CKE low width for selfrefresh entry to exit timing
Valid clock requirement after selfrefresh entry or power-down entry
tMPRR
15
WR + RU
(tRP/tCK (avg))
od
Internal write to read
command delay
tDAL
WR + RU

(tRP/tCK (avg))
nCK
27
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Data rate (Mbps)
-AE, -AG
-8A, -8C
1066
800
Parameter
Symbol
min.
max.
min.
max.
Unit
Notes
Exit self-refresh to commands not
requiring a locked DLL
tXS
tRFC (min.)
+ 10

tRFC (min.)
+ 10

ns
27
tXS
5

5

nCK
27
tDLLK (min.)

tDLLK (min.)

nCK
110

110

ns

7.8

7.8
µs
Exit self-refresh to commands
tXSDLL
requiring a locked DLL
Auto-refresh to active/auto-refresh
tRFC
command time
Average periodic refresh interval
tREFI
(0°C ≤ TC ≤ +85°C)
tREFI

3.9

3.9
µs
tCKE
5.625

7.5

ns
27
tCKE
3

3

nCK
27
tXPR
tRFC(min.)+10

tRFC(min.)+10

ns
27
tXPR
5

5

nCK
27
DLL locking time
tDLLK
512

512

nCK
Power-down entry to exit time
tPD
tCKE (min.)
9 × tREFI tCKE (min.)
9 × tREFI
Exit precharge power-down with
DLL frozen to commands
requiring a locked DLL
tXPDLL
24

24

ns
2
tXPDLL
10

10

nCK
2
tXP
7.5

7.5

ns
27
tXP
3

3

nCK
27
tCPDED
1

1

nCK
tACTPDEN
1

1

nCK
20
tPRPDEN
1

1

nCK
20
tRDPDEN
RL + 4 + 1

RL + 4 + 1

nCK
tWRPDEN
WL + 4 +
tWR/tCK (avg)

WL + 4 +
tWR/tCK (avg)

nCK
9
(BC4MRS)
tWRPDEN
WL + 2 +
tWR/tCK (avg)

WL + 2 +
tWR/tCK (avg)

nCK
9
Timing of last WRITA command to
power-down entry
(BL8MRS, BL8OTF, BC4OTF)
tWRAPDEN
WL + 4 + WR
+1

WL + 4 +
WR + 1

nCK
10
(BC4MRS)
tWRAPDEN
WL + 2 + WR
+1

WL + 2 + WR
+1

nCK
10
tREFPDEN
1

1

nCK
20, 21

tMOD (min.)
EO
(+85°C < TC ≤ +95°C)
CKE minimum pulse width
(high and low pulse width)
Exit reset from CKE high to a
valid command
L
Fast exit/active precharge
power down to any command
tMRSPDEN tMOD (min.)
uc
od
Timing of last REF command to
power-down entry
Timing of last MRS command to
power-down entry
Pr
Command pass disable/enable
delay
Timing of last ACT command to
power-down entry
Timing of last PRE command to
power-down entry
Timing of last READ/READA
command to power-down entry
Timing of last WRIT command to
power-down entry
(BL8MRS, BL8OTF, BC4OTF)
15

t
Data Sheet E1375E50 (Ver. 5.0)
59
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
ODT AC Electrical Characteristics [DDR3-1066, 800]
Data rate (Mbps)
-AE, -AG
-8A, -8C
1066
800
Parameter
Symbol
min.
max.
min.
max.
Unit
Notes
RTT turn-on
tAON
–300
300
–400
400
ps
7, 12,
37
tAONPD
2
8.5
2
8.5
ns
tAOF
0.3
0.7
0.3
0.7
tCK
(avg)
tAOFPD
2
8.5
2
8.5
ns
tANPD
WL – 1.0

WL – 1.0

nCK
ODT turn-on Latency
ODTLon
WL – 2.0
WL – 2.0
WL – 2.0
WL – 2.0
nCK
ODT turn-off Latency
ODTLoff
WL – 2.0
WL – 2.0
WL – 2.0
WL – 2.0
nCK
ODTLcnw
WL – 2.0
WL – 2.0
WL – 2.0
WL – 2.0
nCK
EO
Asynchronous RTT turn-on
delay (power-down with DLL
frozen)
RTT_Nom and RTT_WR turnoff time from ODTLoff reference
ODT turn-off (power-down
mode)
ODT to power-down entry/exit
latency
ODTLcwn4 
4 + ODTLoff 
4 + ODTLoff
nCK
ODTLcwn8 
6 + ODTLoff 
6 + ODTLoff
nCK
ODTH4
4

4

nCK
ODTH8
6

6

nCK
L
ODT Latency for changing from
RTT_Nom to RTT_WR
ODT Latency for change from
RTT_WR to RTT_Nom
(BC4)
ODT Latency for change from
RTT_WR to RTT_Nom
(BL8)
ODT high time without WRIT
command or with WRIT
command and BC4
ODT high time with WRIT
command and BL8
Pr
RTT dynamic change skew
tADC
0.7
0.3
0.7
tCK
(avg)
512

512

nCK
256

256

nCK
64

64

nCK
Write Leveling Characteristics [DDR3-1066, 800]
-AE, -AG
1066
Parameter
tWLMRD
30
800
min.
40

40
tWLDQSEN 25

25
tWLS
245

325
tWLH
245

325
Write leveling output delay
tWLO
0
9
Write leveling output error
tWLOE
0
2
60
Unit
Notes

nCK
3

nCK
3

ps

ps
0
9
ns
0
2
ns
t
Data Sheet E1375E50 (Ver. 5.0)
max.
uc
min.
12, 37
-8A, -8C
max.
First DQS pulse rising edge
after write leveling mode is
programmed
DQS, /DQS delay after write
leveling mode is programmed
Write leveling setup time from
rising CK, /CK crossing to
rising DQS, /DQS crossing
Write leveling hold time from
rising DQS, /DQS crossing to
rising CK, /CK crossing
Symbol
od
Power-up and reset calibration
tZQinit
time
Normal operation full calibration
tZQoper
time
Normal operation short
tZQCS
calibration time
0.3
8, 12,
37
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
L
EO
Notes for AC Electrical Characteristics
Notes: 1. Actual value dependent upon measurement level definitions that are TBD.
2. Commands requiring locked DLL are: READ (and READA) and synchronous ODT commands.
3. The max values are system dependent.
4. WR as programmed in mode register.
5. Value must be rounded-up to next integer value.
6. There is no maximum cycle time limit besides the need to satisfy the refresh interval, tREFI.
7. ODT turn on time (min.) is when the device leaves high impedance and ODT resistance begins to turn on.
ODT turn on time (max.) is when the ODT resistance is fully on. Both are measured from ODTLon.
8. ODT turn-off time (min.) is when the device starts to turn-off ODT resistance. ODT turn-off time (max.) is
when the bus is in high impedance. Both are measured from ODTLoff.
9. tWR is defined in ns, for calculation of tWRPDEN it is necessary to round up tWR/tCK to the next integer.
10. WR in clock cycles as programmed in MR0.
11. The maximum read postamble is bound by tDQSCK(min.) plus tQSH(min.) on the left side and
tHZ(DQS)(max.) on the right side.
12. Output timing deratings are relative to the SDRAM input clock. When the device is operated with input
clock jitter, this parameter needs to be derated by TBD.
13. Value is only valid for RON34.
14. Single ended signal parameter. Refer to the section of tLZ (DQS), tLZ (DQ), tHZ (DQS), tHZ (DQ) Notes
for definition and measurement method.
15. tREFI depends on operating case temperature (TC).
16. tIS(base) and tIH(base) values are for 1V/ns command/address single-ended slew rate and 2V/ns CK,
/CK differential slew rate. Note for DQ and DM signals, VREF(DC) = VREFDQ(DC). For input only pins
except /RESET, VREF(DC) = VREFCA(DC). See Address / Command Setup, Hold and Derating section
17. tDS(base) and tDH(base) values are for 1V/ns DQ single-ended slew rate and 2V/ns DQS, /DQS
differential slew rate. Note for DQ and DM signals, VREF(DC) = VREFDQ(DC). For input only pins except
/RESET, VREF(DC) = VREFCA(DC). See Data Setup, Hold and Slew Rate Derating section.
18. Start of internal write transaction is definited as follows:
For BL8 (fixed by MRS and on- the-fly): Rising clock edge 4 clock cycles after WL.
For BC4 (on-the-fly): Rising clock edge 4 clock cycles after WL.
For BC4 (fixed by MRS): Rising clock edge 2 clock cycles after WL.
19. The maximum read preamble is bound by tLZ(DQS)(min.) on the left side and tDQSCK(max.) on the right
side.
20. CKE is allowed to be registered low while operations such as row activation, precharge, auto precharge or
refresh are in progress, but power-down IDD spec will not be applied until finishing those operations.
21. Although CKE is allowed to be registered low after a refresh command once tREFPDEN(min.) is satisfied,
there are cases where additional time such as tXPDLL(min.) is also required. See Figure Power-Down
Entry/Exit Clarifications - Case 2.
22. tJIT(duty) = ± { 0.07 × tCK(avg) – [(0.5 - (min (tCH(avg), tCL(avg))) × tCK(avg)] }.
For example, if tCH/tCL was 0.48/0.52, tJIT(duty) would calculate out to ±125ps for DDR3-800.
The tCH(avg) and tCL(avg) values listed must not be exceeded.
23. These parameters are measured from a command/address signal (CKE, /CS, /RAS, /CAS, /WE, ODT,
BA0, A0, A1, etc.) transition edge to its respective clock signal (CK, /CK) crossing. The spec values are
not affected by the amount of clock jitter applied (i.e. tJIT(per), tJIT(cc), etc.), as the setup and hold are
relative to the clock signal crossing that latches the command/address. That is, these parameters should
be met whether clock jitter is present or not.
24 These parameters are measured from a data strobe signal ((L/U/T)DQS, /DQS) crossing to its respective
clock signal (CK, /CK) crossing. The spec values are not affected by the amount of clock jitter applied (i.e.
tJIT(per), tJIT(cc), etc.), as these are relative to the clock signal crossing. That is, these parameters
should be met whether clock jitter is present or not.
25. These parameters are measured from a data signal ((L/U)DM, (L/U)DQ0, (L/U)DQ1, etc.) transition edge
to its respective data strobe signal ((L/U/T)DQS/DQS) crossing.
t
uc
od
Pr
Data Sheet E1375E50 (Ver. 5.0)
61
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
EO
26. For these parameters, the DDR3 SDRAM device is characterized and verified to support
tnPARAM [nCK] = RU{tPARAM [ns] / tCK(avg)}, which is in clock cycles, assuming all input clock jitter
specifications are satisfied.
For example, the device will support tnRP = RU{tRP / tCK(avg)}, which is in clock cycles, if all input clock
jitter specifications are met. This means: For DDR3-800 6-6-6, of which tRP = 15ns, the device will
support tnRP =RU{tRP / tCK(avg)} = 6, i.e. as long as the input clock jitter specifications are met,
precharge command at Tm and active command at Tm+6 is valid even if (Tm+6 − Tm) is less than 15ns
due to input clock jitter.
27. These parameters should be the larger of the two values, analog (ns) and number of clocks (nCK).
28 The tRAS lockout circuit internally delays the Precharge operation until the array restore operation has
been completed so that the auto precharge command may be issued with any read or write command.
29 Defined between end of MPR read burst and MRS which reloads MPR or disables.
30 One ZQCS command can effectively correct a minimum of 0.5% (ZQCorrection) of RON and RTT
impedance error within 64nCK for all speed bins assuming the maximum sensitivities specified in the
‘Output Driver Voltage and Temperature Sensitivity’ and ‘ODT Voltage and Temperature Sensitivity’
tables. The appropriate interval between ZQCS commands can be determined from these tables and
other application-specific parameters.
One method for calculating the interval between ZQCS commands, given the temperature (Tdriftrate) and
voltage (Vdriftrate) drift rates that the SDRAM is subject to in the application, is illustrated. The interval
could be defined by the following formula:
× × L
where TSens = max.(dRTTdT, dRONdTM) and VSens = max.(dRTTdV, dRONdVM) define the SDRAM
temperature and voltage sensitivities. For example, if TSens = 1.5%/°C, VSens = 0.15%/mV, Tdriftrate =
1°C/sec and Vdriftrate = 15mV/sec, then the interval between ZQCS commands is calculated as:
× × t
uc
od
Pr
31 The tIS(base) AC150 specifications are adjusted from the tIS(base) specification by adding an additional
100ps of derating to accommodate for the lower alternate threshold of 150mV and another 25ps to
account for the earlier reference point [(175mV − 150mV)/1V/ns].
32 Pulse width of a input signal is defined as the width between the first crossing of VREF(DC) and the
consecutive crossing of VREF(DC).
33 tDQSL describes the instantaneous differential input low pulse width on DQS − /DQS, as measured from
one falling edge to the next consecutive rising edge.
34 tDQSH describes the instantaneous differential input high pulse width on DQS −/DQS, as measured from
one rising edge to the next consecutive falling edge.
35 tDQSH,act + tDQSL,act = 1tCK,act ; with tXYZ,act being the actual measured value of the respective
timing parameter in the application.
36 tDSH,act + tDSS,act = 1tCK,act ; with tXYZ,act being the actual measured value of the respective timing
parameter in the application.
37 When the device is operated with input clock jitter, this parameter needs to be derated by the actual
tERR(mper),act of the input clock, where 2 ≤ m ≤ 12. (output deratings are relative to the SDRAM input
clock.)
For example, if the measured jitter into a DDR3-800 SDRAM has tERR(mper),act,min = −172ps and
tERR(mper),act,max = +193ps, then tDQSCK,min(derated) = tDQSCK,min − tERR(mper),act,max =
−400ps − 193ps = −593ps and tDQSCK,max(derated) =tDQSCK,max − tERR(mper),act,min = 400ps +
172ps = +572ps. Similarly, tLZ(DQ) forDDR3-800 derates to tLZ(DQ),min(derated) = −800ps − 193ps =
−993ps and tLZ(DQ),max(derated) = 400ps + 172ps = +572ps. Note that tERR(mper),act,min is the
minimum measured value of tERR(nper) where 2 ≤ n ≤ 12, and tERR(mper),act,max is the maximum
measured value of tERR(nper) where 2 ≤ n ≤ 12.
38 When the device is operated with input clock jitter, this parameter needs to be derated by the actual
tJIT(per),act of the input clock. (output deratings are relative to the SDRAM input clock.)
For example, if the measured jitter into a DDR3-800 SDRAM has tCK(avg),act = 2500ps, tJIT(per),act,min
= − 72ps and tJIT(per),act,max = +93ps, then tRPRE,min(derated) = tRPRE,min + tJIT(per),act,min = 0.9
× tCK(avg),act + tJIT(per),act,min = 0.9 × 2500ps − 72ps = +2178ps. Similarly, tQH,min(derated) =
tQH,min + tJIT(per),act,min = 0.38 × tCK(avg),act + tJIT(per),act,min = 0.38 × 2500ps − 72ps = + 878ps.
Data Sheet E1375E50 (Ver. 5.0)
62
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Clock Jitter [DDR3-1600, 1333]
Data rate (Mbps)
-GL, -GN
-DG, -DJ
1600
1333
Parameter
Symbol
min.
max.
min.
max.
Unit
Notes
Average clock period
tCK (avg)
1250
3333
1500
3333
ps
1
Absolute clock period
tCK (abs)
tCK(avg)min tCK(avg)max tCK(avg)min
+
+
+
tJIT(per)min tJIT(per)max tJIT(per)min
tCK(avg)max
+
ps
tJIT(per)max
2
Clock period jitter
tJIT (per)
−70
70
−80
80
ps
6
Clock period jitter during
DLL locking period
tJIT (per, lck) −60
60
−70
70
ps
6
Cycle to cycle period Jitter
tJIT (cc)

140

160
ps
7
tJIT (cc, lck)

120

140
ps
7
tERR (2per)
−103
103
−118
118
ps
8
tERR (3per)
−122
122
−140
140
ps
8
tERR (4per)
−136
136
−155
155
ps
8
tERR (5per)
−147
147
−168
168
ps
8
tERR (6per)
−155
155
−177
177
ps
8
tERR (7per)
−163
163
−186
186
ps
8
tERR (8per)
−169
169
−193
193
ps
8
tERR (9per)
−175
175
−200
200
ps
8
tERR (10per) −180
180
−205
205
ps
8
tERR (11per) −184
184
−210
210
ps
8
tERR (12per) −188
188
−215
215
ps
8
ps
9
L
EO
Cycle to cycle clock period jitter
during DLL locking period
Cumulative error across 2
cycles
Cumulative error across 3
cycles
Cumulative error across 4
cycles
Cumulative error across 5
cycles
Cumulative error across 6
cycles
Cumulative error across 7
cycles
Cumulative error across 8
cycles
Cumulative error across 9
cycles
Cumulative error across 10
cycles
Cumulative error across 11
cycles
Cumulative error across 12
cycles
Cumulative error across
n = 13, 14…49, 50 cycles
Pr
tERR (nper) min. = (1+0.68in(n)) x tJIT(per) min
tERR (nper) max. = (1+0.68in(n)) x tJIT(per) max
Average high pulse width
tCH (avg)
0.47
Average low pulse width
tCL (avg)
0.47
Absolute clock high pulse width
tCH (abs)
0.43
Absolute clock low pulse width
tCL (abs)
0.43
Duty cycle jitter
tJIT (duty)

od
tERR (nper)
0.47
0.53
0.53
0.47
0.53

0.43


0.43



tCK
(avg)
tCK
(avg)
tCK
(avg)
tCK
(avg)
3
4
10, 11
10, 12
uc
0.53

ps
5
t
Data Sheet E1375E50 (Ver. 5.0)
63
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Clock Jitter [DDR3-1066, 800]
Data rate (Mbps)
-AE, -AG
-8A, -8C
1066
800
Symbol
min.
max.
min.
max.
Unit Notes
Average clock period
tCK (avg)
1875
3333
2500
3333
ps
1
Absolute clock period
tCK (abs)
tCK(avg)min tCK(avg)max+ tCK(avg)min tCK(avg)max
ps
+ tJIT(per)min tJIT(per)max + tJIT(per)min + tJIT(per)max
2
Clock period jitter
tJIT (per)
−90
90
−100
100
ps
6
Clock period jitter during
DLL locking period
tJIT (per, lck) −80
80
−90
90
ps
6
Cycle to cycle period jitter
tJIT (cc)

180

200
ps
7
Cycle to cycle clock period jitter
during DLL locking period
tJIT (cc, lck)

160

180
ps
7
Cumulative error across 2 cycles
tERR (2per)
−132
132
−147
147
ps
8
Cumulative error across 3 cycles
tERR (3per)
−157
157
−175
175
ps
8
Cumulative error across 4 cycles
tERR (4per)
−175
175
−194
194
ps
8
Cumulative error across 5 cycles
tERR (5per)
−188
188
−209
209
ps
8
Cumulative error across 6 cycles
tERR (6per)
−200
200
−222
222
ps
8
Cumulative error across 7 cycles
tERR (7per)
−209
209
−232
232
ps
8
Cumulative error across 8 cycles
tERR (8per)
−217
217
−241
241
ps
8
−224
224
−249
249
ps
8
Cumulative error across 10 cycles tERR (10per) −231
231
−257
257
ps
8
Cumulative error across 11 cycles tERR (11per) −237
237
−263
263
ps
8
Cumulative error across 12 cycles tERR (12per) −242
242
−269
269
ps
8
tERR (nper)
tERR (nper) min. = (1+0.68in(n)) x tJIT(per) min
tERR (nper) max. = (1+0.68in(n)) x tJIT(per) max
ps
9
tCH (avg)
0.47
0.53
0.47
0.53
tCL (avg)
0.47
0.53
0.47
0.53
tCH (abs)
0.43

0.43

tCL (abs)
0.43

0.43

tJIT (duty)




L
EO
Parameter
Cumulative error across 9 cycles
Average high pulse width
Average low pulse width
Absolute clock high pulse width
Duty cycle jitter
od
Absolute clock low pulse width
Pr
Cumulative error across
n=13, 14…49,50 cycles
tERR (9per)
tCK
(avg)
tCK
(avg)
tCK
(avg)
tCK
(avg)
ps
3
4
10, 11
10, 12
5
Notes: 1. tCK (avg) is calculated as the average clock period across any consecutive 200cycle window, where each
clock period is calculated from rising edge to rising edge.
Σ
N
tCKj
N
j=1
uc
N = 200
2. tCK (abs) is the absolute clock period, as measured from one rising edge to the next consecutive rising
edge. tCK (abs) is not subject to production test.
3. tCH (avg) is defined as the average high pulse width, as calculated across any consecutive 200 high
pulses.
Σ
N
(N × tCK(avg))
tCHj
t
j=1
N = 200
Data Sheet E1375E50 (Ver. 5.0)
64
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
4. tCL (avg) is defined as the average low pulse width, as calculated across any consecutive 200 low pulses.
Σ
N
(N × tCK(avg))
tCLj
j=1
N = 200
L
EO
5. tJIT (duty) is defined as the cumulative set of tCH jitter and tCL jitter. tCH jitter is the largest deviation of
any single tCH from tCH (avg). tCL jitter is the largest deviation of any single tCL from tCL (avg).
tJIT (duty) is not subject to production test.
tJIT (duty) = Min./Max. of {tJIT (CH), tJIT (CL)}, where:
tJIT (CH) = {tCHj- tCH (avg) where j = 1 to 200}
tJIT (CL) = {tCLj- tCL (avg) where j = 1 to 200}
6. tJIT (per) is defined as the largest deviation of any single tCK from tCK (avg).
tJIT (per) = Min./Max. of { tCKj − tCK (avg) where j = 1 to 200}
tJIT (per) defines the single period jitter when the DLL is already locked. tJIT (per, lck) uses the same
definition for single period jitter, during the DLL locking period only. tJIT (per) and tJIT (per, lck) are not
subject to production test.
7. tJIT (cc) is defined as the absolute difference in clock period between two consecutive clock cycles:
tJIT (cc) = Max. of {tCKj+1 - tCKj}
tJIT (cc) is defines the cycle when the DLL is already locked. tJIT (cc, lck) uses the same definition for
cycle-to-cycle jitter, during the DLL locking period only. tJIT (cc) and tJIT (cc, lck) are not subject to
production test.
8. tERR (nper) is defined as the cumulative error across n multiple consecutive cycles from tCK (avg).
tERR (nper) is not subject to production test.
9 n = from 13 cycles to 50 cycles. This row defines 38 parameters.
10. These parameters are specified per their average values, however it is understood that the following
relationship between the average timing and the absolute instantaneous timing hold at all times.
(minimum and maximum of spec values are to be used for calculations in the table below.)
Absolute clock period
Symbol
min.
max.
tCK (avg), min. + tJIT
(per),min.
tCH (avg), min. × tCK
(avg),min. + tJIT (duty),min.
tCL (avg), min. × tCK
(avg),min. + tJIT (duty),min.
tCK (avg), max. + tJIT
ps
(per),max.
tCH (avg), max. × tCK
ps
(avg),max. + tJIT (duty),max.
tCL (avg), max. × tCK
ps
(avg),max. + tJIT (duty),max.
Pr
Parameter
Absolute clock high pulse
width
Absolute clock low pulse
width
tCK (abs)
tCH (abs)
tCL (abs)
Unit
t
uc
od
11 tCH (abs) is the absolute instantaneous clock high pulse width, as measured from one rising edge to the
following falling edge.
12 tCL(abs) is the absolute instantaneous clock low pulse width, as measured from one falling edge to the
following rising edge.
Data Sheet E1375E50 (Ver. 5.0)
65
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Bank 7
Bank 6
Bank 5
Bank 4
Bank 3
Bank 2
Bank 1
Row
address
buffer
and
refresh
counter
Mode
register
Memory cell array
Bank 0
Sense amp.
Control logic
L
/CS
/RAS
/CAS
/WE
Command decoder
EO
Address,
BA0, BA1, BA2
Row decoder
CK
/CK
CKE
Clock
generator
Block Diagram
Column decoder
Column
address
buffer
and
burst
counter
Data control circuit
Pr
Latch circuit
CK, /CK
DLL
Input & Output buffer
DQS, /DQS
TDQS, /TDQS
ODT
od
DM
DQ
t
uc
Data Sheet E1375E50 (Ver. 5.0)
66
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Pin Function
CK, /CK (input pins)
CK and /CK are differential clock inputs. All address and control input signals are sampled on the crossing of the
positive edge of CK and negative edge of /CK. Output (read) data is referenced to the crossings of CK and /CK
(both directions of crossing).
/CS (input pin)
All commands are masked when /CS is registered high. /CS provides for external rank selection on systems with
multiple ranks. /CS is considered part of the command code.
/RAS, /CAS, /WE (input pins)
/RAS, /CAS and /WE (along with /CS) define the command being entered.
EO
A0 to A13 (input pins)
Provided the row address for active commands and the column address for read/write commands to select one
location out of the memory array in the respective bank. (A10(AP) and A12(/BC) have additional functions, see
below) The address inputs also provide the op-code during mode register set commands.
[Address Pins Table]
Address (A0 to A13)
Page size
Row address (RA)
Column address (CA)
EDJ1104BBSE
1KB
AX0 to AX13
AY0 to AY9, AY11
AX0 to AX13
AY0 to AY9
2KB
AX0 to AX12
AY0 to AY9
EDJ1108BBSE
EDJ1116BBSE
L
Part number
Note
1
Note: A13 pin is NC for x16 organization.
Pr
A10(AP) (input pin)
A10 is sampled during read/write commands to determine whether auto precharge should be performed to the
accessed bank after the read/write operation. (high: auto precharge; low: no auto precharge)
A10 is sampled during a precharge command to determine whether the precharge applies to one bank (A10 = low)
or all banks (A10 = high). If only one bank is to be precharged, the bank is selected by bank addresses (BA).
od
A12(/BC) (input pin)
A12 is sampled during read and write commands to determine if burst chop (on-the-fly) will be performed.
(A12 = high: no burst chop, A12 = low: burst chopped.) See command truth table for details.
BA0 to BA2 (input pins)
BA0, BA1 and BA2 define to which bank an active, read, write or precharge command is being applied. BA0 and
BA1 also determine which mode register (MR0 to MR3) is to be accessed during a MRS cycle.
[Bank Select Signal Table]
BA1
BA2
uc
BA0
Bank 0
L
L
Bank 1
H
L
Bank 2
L
H
Bank 3
H
H
Bank 4
L
L
Bank 5
H
L
Bank 6
L
H
H
Bank 7
H
H
H
Data Sheet E1375E50 (Ver. 5.0)
67
L
L
H
H
t
Remark: H: VIH. L: VIL.
L
L
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
CKE (input pin)
CKE high activates, and CKE low deactivates, internal clock signals and device input buffers and output drivers.
Taking CKE low provides precharge power-down and self-refresh operation (all banks idle), or active power-down
(row active in any bank). CKE is asynchronous for self-refresh exit. After VREF has become stable during the
power-on and initialization sequence, it must be maintained for proper operation of the CKE receiver. For proper
self-refresh entry and exit, VREF must be maintained to this input. CKE must be maintained high throughout read
and write accesses. Input buffers, excluding CK, /CK, ODT and CKE are disabled during power-down. Input buffers,
excluding CKE, are disabled during self-refresh.
DM, DMU, DML (input pins)
DM is an input mask signal for write data. Input data is masked when DM is sampled high coincident with that input
data during a write access. DM is sampled on both edges of DQS. For ×8 configuration, the function of DM or
TDQS, /TDQS is enabled by mode register A11 setting in MR1.
EO
DQ, DQU, DQL (input/output pins)
Bi-directional data bus.
DQS, /DQS, DQSU, /DQSU, DQSL, /DQSL (input/output pins)
Output with read data, input with write data. Edge-aligned with read data, center-aligned with write data.
The data strobe DQS is paired with differential signal /DQS to provide differential pair signaling to the system during
READs and WRITEs.
L
TDQS, /TDQS (output pins)
TDQS and /TDQS is applicable for ×8 configuration only. When enabled via mode register A11 = 1 in MR1, DRAM
will enable the same termination resistance function on TDQS, /TDQS as is applied to DQS, /DQS. When disabled
via mode register A11 = 0 in MR1, DM/TDQS will provide the data mask function and /TDQS is not used.
In ×4/×16 configuration, the TDQS function must be disabled via mode register A11 = 0 in MR1.
Pr
/RESET (input pin)
/RESET is a CMOS rail to rail signal with DC high and low at 80% and 20% of VDD (1.20V for DC high and 0.30V
for DC low).
It is negative active signal (active low) and is referred to GND. There is no termination required on this signal. It will
be heavily loaded across multiple chips. /RESET is destructive to data contents.
ZQ (supply)
Reference pin for ZQ calibration.
od
ODT (input pins)
ODT (registered high) enables termination resistance internal to the DDR3 SDRAM. When enabled, ODT is only
applied to each DQ, DQS, /DQS, DM/TDQS, NU(/TDQS) (when TDQS is enabled via mode register A11 = 1 in MR1)
signal for ×4/×8 configuration. For ×16 configuration ODT is applied to each DQ, DQSU, /DQSU, DQSL, /DQSL,
DMU, and DML signal. The ODT pin will be ignored if the mode register (MR1) is programmed to disable ODT.
uc
VDD, VSS, VDDQ, VSSQ (power supply)
VDD and VSS are power supply pins for internal circuits. VDDQ and VSSQ are power supply pins for the output
buffers.
VREFCA, VREFDQ (power supply)
Reference voltage
t
Data Sheet E1375E50 (Ver. 5.0)
68
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Command Operation
Command Truth Table
The DDR3 SDRAM recognizes the following commands specified by the /CS, /RAS, /CAS, /WE and address pins.
CKE
BA0 to A12
/RAS /CAS /WE BA2
(/BC)
Mode register set
MRS
H
H
L
L
L
L
BA
op-code
Auto-refresh
REF
H
H
L
L
L
H
V
V
V
V
Self-refresh entry
SELF
H
L
L
L
L
H
V
V
V
V
Self-refresh exit
SREX
L
H
H
×
×
×
×
×
×
×
L
H
L
H
H
H
V
V
V
V
V
L
V
H
V
EO
Function
Previous Current
Symbol cycle
cycle
/CS
A10
Address
(AP)
Notes
Single bank precharge
PRE
H
H
L
L
H
L
BA
Precharge all banks
PALL
H
H
L
L
H
L
V
V
Bank activate
ACT
H
H
L
L
H
H
BA
RA
Write (Fixed BL)
WRIT
H
H
L
H
L
L
BA
V
L
CA
Write (BC4, on the fly)
WRS4
H
H
L
H
L
L
BA
L
L
CA
Write (BL8, on the fly)
WRS8
H
H
L
H
L
L
BA
H
L
CA
H
H
L
H
L
L
BA
V
H
CA
WRAS4 H
H
L
H
L
L
BA
L
H
CA
WRAS8 H
H
L
H
L
L
BA
H
H
CA
Read (Fixed BL)
READ
H
L
H
L
H
BA
V
L
CA
Read (BC4, on the fly)
RDS4
H
H
L
H
L
H
BA
L
L
CA
Read (BL8, on the fly)
RDS8
H
H
L
H
L
H
BA
H
L
CA
READA H
H
L
H
L
H
BA
V
H
CA
RDAS4 H
H
L
H
L
H
BA
L
H
CA
RDAS8 H
H
No operation
NOP
H
H
Device deselect
DESL
H
H
Power-down mode entry
PDEN
L
Write with auto precharge
(Fixed BL)
Write with auto precharge
(BC4, on the fly)
Write with auto precharge
(BL8, on the fly)
H
H
L
H
L
L
H
od
Pr
Read with auto precharge
(Fixed BL)
Read with auto precharge
(BC4, on the fly)
Read with auto precharge
(BL8, on the fly)
WRITA
6, 8,
11
6, 7,
8, 11
12
L
H
L
H
BA
H
H
CA
L
H
H
H
V
V
V
V
9
H
×
×
×
×
×
×
×
10
5, 11
×
×
×
×
×
×
×
H
H
H
V
V
V
V
H
×
×
×
×
×
×
×
V
V
V
V
×
×
H
×
×
×
L
×
Power-down mode exit
PDEX
L
H
L
H
H
H
ZQ calibration long
ZQCL
H
H
L
H
H
L
ZQ calibration short
ZQCS
H
H
L
H
H
L
5, 11
uc
H
L
Remark: H = VIH. L = VIL. × = Don't care (defined or undefined (including floating around VREF)) logic level.
V = VIH or VIL (defined logic level).
BA = Bank addresses. RA = Row Address. CA = Column Address. /BC = Burst Chop.
t
Data Sheet E1375E50 (Ver. 5.0)
69
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
L
EO
Notes: 1. All DDR3 commands are defined by states of /CS, /RAS, /CAS, /WE and CKE at the rising edge of the
clock. The most significant bit (MSB) of BA, RA, and CA are device density and configuration dependent.
2. /RESET is an active low asynchronous signal that must be driven high during normal operation
3. Bank Addresses (BA) determine which bank is to be operated upon. For MRS, BA selects an mode
register.
4. Burst READs or WRITEs cannot be terminated or interrupted and fixed/on the fly BL will be defined by
MRS.
5. The power-down mode does not perform any refresh operations.
6. The state of ODT does not affect the states described in this table. The ODT function is not available
during self-refresh.
7. Self-refresh exit is asynchronous.
8. VREF (Both VREFDQ and VREFCA) must be maintained during self-refresh operation.
9. The No Operation command (NOP) should be used in cases when the DDR3 SDRAM is in an idle or a
wait state. The purpose of the NOP command is to prevent the DDR3 SDRAM from registering any
unwanted commands between operations. A NOP command will not terminate a previous operation that is
still executing, such as a burst read or write cycle.
10. The DESL command performs the same function as a NOP command.
11. Refer to the CKE Truth Table for more detail with CKE transition.
12. No more than 4 banks may be activated in a rolling tFAW window. Converting to clocks is done by
dividing tFAW (ns) by tCK (ns) and rounding up to next integer value. As an example of the rolling
window, if (tFAW/tCK) rounds up to 10 clocks, and an activate command is issued in clock N, no more
than three further activate commands may be issued in clock N+1 through N+9.
Pr
No Operation Command [NOP]
The No Operation command (NOP) should be used in cases when the DDR3 SDRAM is in an idle or a wait state.
The purpose of the NOP command is to prevent the DDR3 SDRAM from registering any unwanted commands
between operations. A NOP command will not terminate a previous operation that is still executing, such as a burst
read or write cycle.
The no operation (NOP) command is used to instruct the selected DDR3 SDRAM to perform a NOP (/CS low, /RAS,
/CAS, /WE high). This prevents unwanted commands from being registered during idle or wait states. Operations
already in progress are not affected.
od
Device Deselect Command [DESL]
The deselect function (/CS high) prevents new commands from being executed by the DDR3 SDRAM. The DDR3
SDRAM is effectively deselected. Operations already in progress are not affected.
Mode Register Set Command [MR0 to MR3]
The mode registers are loaded via row address inputs. See mode register descriptions in the Programming the
Mode Register section. The mode register set command can only be issued when all banks are idle, and a
subsequent executable command cannot be issued until tMRD is met.
uc
t
Bank Activate Command [ACT]
This command is used to open (or activate) a row in a particular bank for a subsequent access. The values on the
BA inputs select the bank, and the address provided on row address inputs selects the row. This row remains active
(or open) for accesses until a precharge command is issued to that bank. A precharge command must be issued
before opening a different row in the same bank.
Note: No more than 4 banks may be activated in a rolling tFAW window. Converting to clocks is done by dividing
tFAW (ns) by tCK (ns) and rounding up to next integer value. As an example of the rolling window, if
(tFAW/tCK) rounds up to 10 clocks, and an activate command is issued in clock N, no more than three further
activate commands may be issued in clock N+1 through N+9.
Data Sheet E1375E50 (Ver. 5.0)
70
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Read Command [READ, RDS4, RDS8, READA, RDAS4, RDAS8]
The read command is used to initiate a burst read access to an active row. The values on the BA inputs select the
bank, and the address provided on column address inputs selects the starting column location. The value on input
A10 determines whether or not auto precharge is used. If auto precharge is selected, the row being accessed will be
precharged at the end of the read burst; if auto precharge is not selected, the row will remain open for subsequent
accesses.
EO
Write Command [WRIT, WRS4, WRS8, WRITA, WRAS4, WRAS8]
The write command is used to initiate a burst write access to an active row. The values on the BA inputs select the
bank, and the address provided on column address inputs selects the starting column location. The value on input
A10 determines whether or not auto precharge is used. If auto precharge is selected, the row being accessed will be
precharged at the end of the write burst; if auto precharge is not selected, the row will remain open for subsequent
accesses. Input data appearing on the DQ is written to the memory array subject to the DM input logic level
appearing coincident with the data. If a given DM signal is registered low, the corresponding data will be written to
memory; if the DM signal is registered high, the corresponding data inputs will be ignored, and a write will not be
executed to that byte/column location.
L
Precharge Command [PRE, PALL]
The precharge command is used to deactivate the open row in a particular bank or the open row in all banks. The
bank(s) will be available for a subsequent row access a specified time (tRP) after the precharge command is issued.
Input A10 determines whether one or all banks are to be precharged, and in the case where only one bank is to be
precharged, inputs BA select the bank. Otherwise BA are treated as "Don't Care." Once a bank has been
precharged, it is in the idle state and must be activated prior to any read or write commands being issued to that
bank. A precharge command will be treated as a NOP if there is no open row in that bank (idle state), or if the
previously open row is already in the process of precharging.
od
Pr
Auto precharge Command [READA, WRITA]
Before a new row in an active bank can be opened, the active bank must be precharged using either the precharge
command or the auto precharge function. When a read or a write command is given to the DDR3 SDRAM, the /CAS
timing accepts one extra address, column address A10, to allow the active bank to automatically begin precharge at
the earliest possible moment during the burst read or write cycle. If A10 is low when the read or write command is
issued, then normal read or write burst operation is executed and the bank remains active at the completion of the
burst sequence. If A10 is high when the read or write command is issued, then the auto precharge function is
engaged. During auto precharge, a read command will execute as normal with the exception that the active bank
will begin to precharge on the rising edge which is /CAS latency (CL) clock cycles before the end of the read burst.
(This timing is equal to the rising edge which is (AL* + 4) cycles later from the read with auto precharge command.)
Auto precharge can also be implemented during write commands. The precharge operation engaged by the Auto
precharge command will not begin until the last data of the burst write sequence is properly stored in the memory
array.
This feature allows the precharge operation to be partially or completely hidden during burst read cycles (dependent
upon /CAS latency) thus improving system performance for random data access. The tRAS lockout circuit internally
delays the Precharge operation until the array restore operation has been completed so that the auto precharge
command may be issued with any read or write command.
Note: AL (Additive Latency), refer to Posted /CAS description in the Register Definition section.
uc
t
Auto-Refresh Command [REF]
Auto-refresh is used during normal operation of the DDR3 SDRAM and is analogous to /CAS-before-/RAS (CBR)
refresh in FPM/EDO DRAM. This command is nonpersistent, so it must be issued each time a refresh is required.
The addressing is generated by the internal refresh controller. This makes the address bits a "Don't Care" during an
auto-refresh command.
A maximum of eight auto-refresh commands can be posted to any given DDR3, meaning that the maximum absolute
interval between any auto-refresh command and the next auto-refresh command is 9 × tREFI. This maximum
absolute interval is to allow DDR3 output drivers and internal terminators to automatically recalibrate compensating
for voltage and temperature changes.
Data Sheet E1375E50 (Ver. 5.0)
71
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Self-Refresh Command [SELF]
The self-refresh command can be used to retain data in the DDR3, even if the rest of the system is powered down.
When in the self-refresh mode, the DDR3 retains data without external clocking. The self-refresh command is
initiated like an auto-refresh command except CKE is disabled (low). The DLL is automatically disabled upon
entering self-refresh and is automatically enabled and reset upon exiting self-refresh. The active termination is also
disabled upon entering self-refresh and enabled upon exiting self-refresh. (512 clock cycles must then occur before
a read command can be issued). Input signals except CKE are "Don't Care" during self-refresh. The procedure for
exiting self-refresh requires a sequence of commands. First, CK and /CK must be stable prior to CKE going back
high. Once CKE is high, the DDR3 must have NOP commands issued for tXSDLL because time is required for the
completion of any internal refresh in progress. A simple algorithm for meeting both refresh, DLL requirements and
out-put calibration is to apply NOPs for 512 clock cycles before applying any other command to allow the DLL to lock
and the output drivers to recalibrate.
L
EO
ZQ calibration Command [ZQCL, ZQCS]
ZQ calibration command (short or long) is used to calibrate DRAM RON and ODT values over PVT.
ZQ Calibration Long (ZQCL) command is used to perform the initial calibration during power-up initialization
sequence.
ZQ Calibration Short (ZQCS) command is used to perform periodic calibrations to account for VT variations.
All banks must be precharged and tRP met before ZQCL or ZQCS commands are issued by the controller.
ZQ calibration commands can also be issued in parallel to DLL lock time when coming out of self-refresh.
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Data Sheet E1375E50 (Ver. 5.0)
72
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
CKE Truth Table
CKE
Current state*
Power-down
Self-refresh
Bank Active
2
*3
Previous
Current
1
*1
cycle (n-1)* cycle (n)
Command (n)
*3
/CS, /RAS, /CAS, /WE Operation (n)
Notes
L
L
×
Maintain power-down
14, 15
L
H
DESL or NOP
Power-down exit
11, 14
L
L
×
Maintain self-refresh
15, 16
L
H
DESL or NOP
Self-refresh exit
8, 12, 16
H
L
DESL or NOP
Active power-down entry
11, 13, 14
H
L
DESL or NOP
Power-down entry
11, 13, 14, 17
Writing
H
L
DESL or NOP
Power-down entry
11, 13, 14, 17
L
DESL or NOP
Power-down entry
11, 13, 14, 17
EO
Reading
Precharging
H
Refreshing
H
L
DESL or NOP
Precharge power-down entry 11
All banks idle
H
L
DESL or NOP
Precharge power-down entry 11, 13, 14, 18
H
L
REFRESH
Self-refresh entry
Any state other than
H
listed above
H
Refer to the Command Truth Table
9, 13, 18
10
L
Remark: H = VIH. L = VIL. × = Don’t care
Notes: 1. CKE (n) is the logic state of CKE at clock edge n; CKE (n−1) is the state of CKE at the previous clock
edge.
2. Current state is the state of the DDR3 SDRAM immediately prior to clock edge n.
3. Command (n) is the command registered at clock edge n, and operation (n) is a result of Command (n).
ODT is not included here.
4. All states and sequences not shown are illegal or reserved unless explicitly described elsewhere in this
document.
5. The state of ODT does not affect the states described in this table. The ODT function is not available
during self-refresh.
6. CKE must be registered with the same value on tCKE (min.) consecutive positive clock edges. CKE must
remain at the valid input level the entire time it takes to achieve the tCKE (min.) clocks of registration.
Thus, after any CKE transition, CKE may not transition from its valid level during the time period of tIS +
tCKE (min.) + tIH.
7. DESL and NOP are defined in the Command Truth Table.
8. On self-refresh exit, DESL or NOP commands must be issued on every clock edge occurring during the
tXS period. Read or ODT command may be issued only after tXSDLL is satisfied.
9. Self-refresh mode can only be entered from the all banks idle state.
10. Must be a legal command as defined in the Command Truth Table.
11. Valid commands for power-down entry and exit are NOP and DESL only.
12. Valid commands for self-refresh exit are NOP and DESL only.
13. Self-refresh can not be entered while read or write operations, (extended) mode register set operations or
precharge operations are in progress. See section Power-Down and self-refresh Command for a detailed
list of restrictions.
14. The power-down does not perform any refresh operations.
15. “×” means “don’t care” (including floating around VREF) in self-refresh and power-down. It also applies to
address pins.
16. VREF (Both VREFDQ and VREFCA) must be maintained during self-refresh operation.
17. If all banks are closed at the conclusion of the read, write or precharge command, the precharge powerdown is entered, otherwise active power-down is entered.
18. Idle state means that all banks are closed (tRP, tDAL, etc. satisfied), no data bursts are in progress. CKE
is high and all timings from previous operation are satisfied (tMRD, tMOD, tRFC, tZQinit, tZQoper, tZQCS,
etc.) as well as all self-refresh exit and power-down exit parameters are satisfied (tXS, tXP, tXPDLL, etc).
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Data Sheet E1375E50 (Ver. 5.0)
73
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Simplified State Diagram
CKE_L
POWER
APPLIED
POWER
ON
RESET
PROCEDURE
MRS, MPR,
WRITE
LEVELING
INITIALIZATION
MRS
FROM ANY
STATE
SELFX
ZQCL
ZQCS
RESET
SELF
REFRESH
SELF
REF
ZQ
CALIBRATION
IDLE
ACT
PDEN
PDEX
ACTIVATING
PRECHARGE
POWER
DOWN
CKE_L
PDEX
CKE_L
PDEN
L
EO
ACTIVE
POWER
DOWN
REFRESHING
BANK
ACTIVE
READ
WRIT
WRIT
READ
WRITA
READA
READ
WRITING
READING
Pr
WRIT
READA
WRITA
WRITA
READA
PRE, PALL
WRITING
PRE, PALL
READING
od
PRE, PALL
PRECHARGING
Automatic sequence
Command sequence
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Data Sheet E1375E50 (Ver. 5.0)
74
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
RESET and Initialization Procedure
Power-Up and Initialization Sequence
EO
1. Apply power (/RESET is recommended to be maintained below 0.2 × VDD, (all other inputs may be undefined). )
/RESET needs to be maintained for minimum 200µs with stable power. CKE is pulled low anytime before
/RESET being de-asserted (min. time 10ns). The power voltage ramp time between 300mV to VDD (min.) must
be no greater than 200ms; and during the ramp, VDD > VDDQ and (VDD − VDDQ) < 0.3V.
• VDD and VDDQ are driven from a single power converter output
AND
• The voltage levels on all pins other than VDD, VDDQ, VSS, VSSQ must be less than or equal to VDDQ and VDD
on one side and must be larger than or equal to VSSQ and VSS on the other side. In addition, VTT is limited to
0.95V max once power ramp is finished,
AND
• VREF tracks VDDQ/2.
OR
L
• Apply VDD without any slope reversal before or at the same time as VDDQ.
• Apply VDDQ without any slope reversal before or at the same time as VTT and VREF.
• The voltage levels on all pins other than VDD, VDDQ, VSS, VSSQ must be less than or equal to VDDQ and VDD
on one side and must be larger than or equal to VSSQ and VSS on the other side.
2. After /RESET is de-asserted, wait for another 500µs until CKE become active. During this time, the DRAM will
start internal state initialization; this will be done independently of external clocks.
3. Clocks (CK, /CK) need to be started and stabilized for at least 10ns or 5tCK (which is larger) before CKE goes
active. Since CKE is a synchronous signal, the corresponding set up time to clock (tIS) must be met. Also a NOP
or DESL command must be registered (with tIS set up time to clock) before CKE goes active. Once the CKE
registered “high” after Reset, CKE needs to be continuously registered high until the initialization sequence is
finished, including expiration of tDLLK and tZQinit.
4. The DDR3 SDRAM will keep its on-die termination in high-impedance state during /RESET being asserted at
least until CKE being registered high. Therefore, the ODT signal may be in undefined state until tIS before CKE
being registered high. After that, the ODT signal must be kept inactive (low) until the power-up and initialization
sequence is finished, including expiration of tDLLK and tZQinit.
5. After CKE being registered high, wait minimum of tXPR, before issuing the first MRS command to load mode
register. (tXPR = max. (tXS ; 5 × tCK)
6. Issue MRS command to load MR2 with all application settings. (To issue MRS command for MR2, provide low to
BA0 and BA2, high to BA1.)
7. Issue MRS command to load MR3 with all application settings. (To issue MRS command for MR3, provide low to
BA2, high to BA0 and BA1.)
8. Issue MRS command to load MR1 with all application settings and DLL enabled. (To issue DLL Enable
command, provide low to A0, high to BA0 and low to BA1 and BA2).
9. Issue MRS command to load MR0 with all application settings and DLL reset. (To issue DLL reset command,
provide high to A8 and low to BA0 to BA2).
10. Issue ZQCL command to start ZQ calibration.
11. Wait for both tDLLK and tZQinit completed.
12. The DDR3 SDRAM is now ready for normal operation.
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Data Sheet E1375E50 (Ver. 5.0)
75
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Ta
Tb
Tc
Td
Te
Tf
Tg
Th
Ti
Tj
Tk
CK, /CK
tCKSRX max. (10 ns; 5tCK)
VDD, VDDQ
200ms
500ms
/RESET
tIS
10ns
CKE
2
tXPR*
tIS
Command
*1
EO
BA
tDLLK
tMRD
tMRD
tMRD
tZQinit
tMOD
MRS
MRS
MRS
MRS
MR2
MR3
MR1
MR0
ZQcal
tIS
ODT
DRAM_RTT
Notes: 1. From time point "Td" until "Tk", NOP or DESL commands must be
applied between MRS and ZQcal commands.
2. tXPR = max. (tXS; 5tCK)
: VIH or VIL
Reset and Initialization Sequence at Power-On Ramping
L
Reset and Initialization with Stable Power
Ta
Tb
CK, /CK
Pr
The following sequence is required for /RESET at no power interruption initialization.
1. Assert /RESET below 0.2 × VDD anytime when reset is needed (all other inputs may be undefined). /RESET
needs to be maintained for minimum 100ns. CKE is pulled low before /RESET being de-asserted (minimum time
10ns).
2. Follow Power-Up Initialization Sequence steps 2 to 12.
3. The reset sequence is now completed; DDR3 SDRAM is ready for normal operation.
Tc
Td
Te
Tf
Tg
Th
Ti
Tj
Tk
tCKSRX max. (10 ns; 5tCK)
500ms
100ns
/RESET
10ns
tIS
CKE
od
VDD, VDDQ
2
*
tXPR
tIS
*1
BA
tMRD
tMRD
MRS
MRS
MRS
MR2
MR3
MR1
tIS
ODT
DRAM_RTT
MRS
76
ZQCL
MR0
Reset Procedure at Power Stable Condition
Data Sheet E1375E50 (Ver. 5.0)
tZQinit
: VIH or VIL
t
Notes: 1. From time point "Td" until"Tk", NOP or DESL commands must be
applied between MRS and ZQCL commands.
2. tXPR = max. (tXS; 5tCK)
tMOD
uc
Command
tDLLK
tMRD
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Programming the Mode Register
EO
For application flexibility, various functions, features and modes are programmable in four mode registers, provided
by the DDR3 SDRAM, as user defined variables, and they must be programmed via a Mode Register Set (MRS)
command. As the default values of the Mode registers (MR#) are not defined, content of mode registers must be
fully initialized and/or re-initialized, i.e. written, after Power-up and/or reset for proper operation. Also the contents of
the mode registers can be altered by re-executing the MRS command during normal operation. When programming
the mode registers, even if the user chooses to modify only a sub-set of the MRS fields, all address fields within the
accessed mode register must be redefined when the MRS command is issued. MRS command and DLL Reset
does not affect array contents, which means these commands can be executed any time after power-up without
affecting the array contents.
The mode register set command cycle time, tMRD is required to complete the write operation to the mode register
and is the minimum time required between two MRS commands. The MRS command to non-MRS command delay,
tMOD, is required for the DRAM to update the features except DLL reset and is the minimum time required from an
MRS command to a non-MRS command excluding NOP and DESL. The mode register contents can be changed
using the same command and timing requirements during normal operation as long as the DRAM is in idle state, i.e.
all banks are in the precharged state with tRP satisfied, all data bursts are completed and CKE is already high prior
to writing into the mode register. The mode registers are divided into various fields depending on the functionality
and/or modes.
Mode Register Set Command Cycle Time (tMRD)
tMRD is the minimum time required from an MRS command to the next MRS command. As DLL enable and DLL
reset are both MRS commands, tMRD is applicable between MRS to MR1 for DLL enable and MRS to MR0 for DLL
reset, and not tMOD.
CK
Command
L
/CK
MRS
NOP
MRS
NOP
Pr
tMRD
tMRD Timing
MRS Command to Non-MRS Command Delay (tMOD)
tMOD is the minimum time required from an MRS command to a non-MRS command excluding NOP and DESL.
Note that additional restrictions may apply, for example, MRS to MR0 for DLL reset followed by read.
CK
Command
MRS
NOP
tMOD
non-MRS
Updating
NOP
uc
Old
setting
od
/CK
New Setting
tMOD Timing
t
Data Sheet E1375E50 (Ver. 5.0)
77
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
DDR3 SDRAM Mode Register 0 [MR0]
The mode register MR0 stores the data for controlling various operating modes of DDR3 SDRAM.
It controls burst length, read burst type, /CAS latency, test mode, DLL reset, WR and DLL control for precharge
power-down, which include various vendor specific options to make DDR3 SDRAM useful for various applications.
The mode register is written by asserting low on /CS, /RAS, /CAS, /WE, BA0 and BA1, while controlling the states of
address pins according to the table below.
BA2 BA1 BA0 A13 A12 A11 A10 A9
0*1
0
0
A7
DLL TM
WR
A6
A5
A4
/CAS latency
A3
A2
A1
RBT CL
A0
BL
Address field
Mode register 0
Burst length
A8
DLL reset
A7
Mode
A3
Read burst type
0
No
0
Normal
0
Nibble sequential
1
Yes
1
Test
1
Interleave
EO
BA1 BA0
0*1 PPD
A8
A1
A0
BL
0
0
8 (Fixed)
4 or 8 (on the fly)
0
1
MRS mode
1
0
4 (Fixed)
1
1
Reserved
0
0
MR0
0
1
MR1
Write recovery for autoprecharge
/CAS latency
A10
A9
WR
A6
A5
A4
A2
Latency
Reserved
0
0
0
0
Reserved
1
0
MR2
A11
1
1
MR3
0
0
0
0
0
1
5*2
0
0
1
0
5
0
1
0
6*2
0
1
0
0
6
0
1
1
7*2
0
1
1
0
7
1
0
0
8*2
1
0
0
0
8
1
0
1
10*2
1
0
1
0
9
1
1
0
12*2
1
1
0
0
10
1
1
1
Reserved
1
1
1
0
Reserved
A12 DLL Control for Precharge PD
Slow exit (DLL off)
1
Fast exit (DLL on)
L
0
Pr
Notes: 1. BA2 and A13 are reserved for future use and must be programmed to 0 during MRS.
2. WR (min.) (Write Recovery for autoprecharge) is determined by tCK (max.) and WR (max.) is determined by tCK (min.).
WR in clock cycles is calculated by dividing tWR (in ns) by tCK (in ns) and rounding up to the next integer
(WR (min.) [cycles] = roundup tWR (ns) / tCK (ns)).
(The WR value in the mode register must be programmed to be equal or larger than WR (min.)
This is also used with tRP to determine tDAL.
MR0 Programming
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Data Sheet E1375E50 (Ver. 5.0)
78
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
DDR3 SDRAM Mode Register 1 [MR1]
The Mode Register MR1 stores the data for enabling or disabling the DLL, output driver strength, RTT_Nom
impedance, additive latency, write leveling enable, TDQS enable and Qoff. The Mode Register 1 is written by
asserting low on /CS, /RAS, /CAS, /WE, high on BA0 and low on BA1, while controlling the states of address pins
according to the table below
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MR1 Programming
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Data Sheet E1375E50 (Ver. 5.0)
79
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
DDR3 SDRAM Mode Register 2 [MR2]
The Mode Register MR2 stores the data for controlling refresh related features, RTT_WR impedance and /CAS write
latency (CWL). The Mode Register 2 is written by asserting low on /CS, /RAS, /CAS, /WE, high on BA1 and low on
BA0, while con-trolling the states of address pins according to the table below.
BA2 BA1 BA0 A13
0*1 1
A12
A11
A10
0*1
0
A7
Self-refresh range
0
Normal self-refresh
1
Extend temperature
self-refresh
A9
A8
Rtt_WR*2
0*1
A7
A6
A5
SRT ASR
A4
A3
A2
A1
A0
PASR* 2
CWL
Address field
Mode register 2
Partial array self-refresh
Refresh array
EO
A2
A1
A0
0
0
0
Full
0
0
1
Half
0
1
0
Quarter: Bank 0 and Bank 1 (BA [2:0] = 000, 001)

: Bank 0 to Bank 3
(BA [2:0] = 000, 001, 010, 011)
A6
Auto self-refresh method
0
1
1
1/8
: Bank 0
(BA [2:0] = 000)
0
Manual SR reference
(SRT)
1
0
0
3/4
: Bank 2 to Bank 7
(BA [2:0] = 010, 011, 100, 101,110 ,111)
1
0
1
Half
: Bank 4 to Bank 7
(BA [2:0] = 100, 101, 110, 111)
1
1
0
Quarter: Bank 6 and Bank 7 (BA [2:0] = 110, 111)
1
1
1
1/8
ASR enable
(Optional)
1
: Bank 7
(BA [2:0] = 111)
CAS write Latency (CWL)
A4
A3
A9
Rtt_WR
0
0
0
5 (tCK ≥ 2.5ns)
0
0
Dynamic ODT off (write does not
affect Rtt value)
0
0
1
6 (2.5ns > tCK ≥ 1.875ns)
0
1
0
7 (1.875ns > tCK ≥ 1.5ns)
0
1
RZQ/4
0
1
1
8 (1.5ns > tCK ≥ 1.25ns)
1
0
RZQ/2
1
0
0
Reserved
1
1
Reserved
1
0
1
Reserved
1
1
0
Reserved
1
1
1
Reserved
L
A5
A10
Pr
Notes: 1. BA2, A8, and A11 to A13 are RFU and must be programmed to 0 during MRS.
2. The Rtt_WR value can be applied during writes even when Rtt_Nom is desabled.
Dring write leveling, Dynamic ODT is not avaiable.
3. Optiona in DDR3 SDRAM: If PASR (Partial Array Self-Refresh) is enabled, data located in areas of the array beyond
the specified address range will be lost if self-refresh is entered. Data integrity will be maintained if tREF conditions are
met and no self-refresh command is issued.
MR2 Programming
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Data Sheet E1375E50 (Ver. 5.0)
80
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
DDR3 SDRAM Mode Register 3 [MR3]
The Mode Register MR3 controls Multi Purpose Registers (MPR). The Mode Register 3 is written by asserting low
on /CS, /RAS, /CAS, /WE, high on BA1 and BA0, while controlling the states of address pins according to the table
below.
BA2 BA1 BA0 A13
0*1
1
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
0*1
1
A2
A1
MPR
A0
Address field
Mode register 3
MPR Loc
MPR Address
MPR location
A1 A0
EO
MPR Operation
0
0
Predefined pattern*2
A2
MPR
0
1
RFU
0
Normal operation*3
1
0
RFU
1
Data flow from MPR
1
1
RFU
Notes : 1. BA2, A3 to A13 are reserved for future use (RFU) and must be programmed to 0 during MRS.
2. The predefined pattern will be used for read synchronization.
3 . When MPR control is set for normal operation, MR3 A[2]=0, MR3 A[1:0] will be ignored.
L
MR3 Programming
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Data Sheet E1375E50 (Ver. 5.0)
81
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Burst Length (MR0)
Read and write accesses to the DDR3 are burst oriented, with the burst length being programmable, as shown in the
figure MR0 Programming. The burst length determines the maximum number of column locations that can be
accessed for a given read or write command. Burst length options include fixed BC4, fixed BL8, and on the fly which
allows BC4 or BL8 to be selected coincident with the registration of a read on write command Via A12 (/BC).
Reserved states should not be used, as unknown operation or incompatibility with future versions may result.
EO
Burst Chop
In case of burst length being fixed to 4 by MR0 setting, the internal write operation starts two clock cycles earlier than
for the BL8 mode. This means that the starting point for tWR and tWTR will be pulled in by two clocks. In case of
burst length being selected on the fly via A12(/BC), the internal write operation starts at the same point in time like a
burst of 8 write operation. This means that during on-the-fly control, the starting point for tWR and tWTR will not be
pulled in by two clocks.
Burst Type (MR0)
[Burst Length and Sequence]
Operation
Starting address
(A2, A1, A0)
Sequential addressing
(decimal)
Interleave addressing
(decimal)
4 (burst chop)
READ
000
0, 1, 2, 3, T, T, T, T
0, 1, 2, 3, T, T, T, T
001
1, 2, 3, 0, T, T, T, T
1, 0, 3, 2, T, T, T, T
010
2, 3, 0, 1, T, T, T, T
2, 3, 0, 1, T, T, T, T
011
3, 0, 1, 2, T, T, T, T
3, 2, 1, 0, T, T, T, T
100
4, 5, 6, 7, T, T, T, T
4, 5, 6, 7, T, T, T, T
101
5, 6, 7, 4, T, T, T, T
5, 4, 7, 6, T, T, T, T
110
6, 7, 4, 5, T, T, T, T
6, 7, 4, 5, T, T, T, T
L
Burst length
8
READ
Pr
WRITE
111
7, 4, 5, 6, T, T, T, T
7, 6, 5, 4, T, T, T, T
0VV
0, 1, 2, 3, X, X, X, X
0, 1, 2, 3, X, X, X, X
1VV
4, 5, 6, 7, X, X, X, X
4, 5, 6, 7, X, X, X, X
0, 1, 2, 3, 4, 5, 6, 7
0, 1, 2, 3, 4, 5, 6, 7
1, 2, 3, 0, 5, 6, 7, 4
1, 0, 3, 2, 5, 4, 7, 6
010
2, 3, 0, 1, 6, 7, 4, 5
2, 3, 0, 1, 6, 7, 4, 5
3, 0, 1, 2, 7, 4, 5, 6
3, 2, 1, 0, 7, 6, 5, 4
4, 5, 6, 7, 0, 1, 2, 3
4, 5, 6, 7, 0, 1, 2, 3
5, 6, 7, 4, 1, 2, 3, 0
5, 4, 7, 6, 1, 0, 3, 2
6, 7, 4, 5, 2, 3, 0, 1
6, 7, 4, 5, 2, 3, 0, 1
7, 4, 5, 6, 3, 0, 1, 2
7, 6, 5, 4, 3, 2, 1, 0
0, 1, 2, 3, 4, 5, 6, 7
0, 1, 2, 3, 4, 5, 6, 7
011
100
101
110
111
WRITE
VVV
uc
od
000
001
Remark: T: Output driver for data and strobes are in high impedance.
V: a valid logic level (0 or 1), but respective buffer input ignores level on input pins.
X: Don’t Care.
Notes: 1. Page length is a function of I/O organization and column addressing
2. 0...7 bit number is value of CA [2:0] that causes this bit to be the first read during a burst.
t
Data Sheet E1375E50 (Ver. 5.0)
82
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
DLL Enable (MR1)
The DLL must be enabled for normal operation. DLL enable is required during power-up initialization, and upon
returning to normal operation after having the DLL disabled. The DLL is automatically disabled when entering selfrefresh operation and is automatically re-enabled upon exit of self-refresh operation. Any time the DLL is enabled
and subsequently reset, tDLLK clock cycles must occur before a read or synchronous ODT command can be issued
to allow time for the internal clock to be synchronized with the external clock. Failing to wait for synchronization to
occur may result in a violation of the tDQSCK, tAON or tAOF parameters. During tDLLK, CKE must continuously be
registered high.
DDR3 SDRAM does not require DLL for any write operation. DDR3 does not require DLL to be locked prior to any
write operation. DDR3 requires DLL to be locked only for read operation and to achieve synchronous ODT timing.
DLL-off Mode
L
EO
DDR3 DLL-off mode is entered by setting MR1 bit A0 to 1; this will disable the DLL for subsequent operations until
A0 bit set back to 0. The MR1 A0 bit for DLL control can be switched either during initialization or later.
The DLL-off mode operations listed below are an optional feature for DDR3. The maximum clock frequency for DLLoff mode is specified by the parameter tCKDLL_OFF. There is no minimum frequency limit besides the need to
satisfy the refresh interval, tREFI.
Due to latency counter and timing restrictions, only one value of /CAS Latency (CL) in MR0 and CAS Write Latency
(CWL) in MR2 are supported. The DLL-off mode is only required to support setting of both CL = 6 and CWL = 6.
DLL-off mode will affect the Read data Clock to Data Strobe relationship (tDQSCK) but not the Data Strobe to Data
relationship (tDQSQ, tQH, tQHS). Special attention is needed to line up Read data to controller time domain.
Comparing with DLL-on mode, where tDQSCK starts from the rising clock edge (AL + CL) cycles after the Read
command, the DLL-off mode tDQSCK starts (AL + CL − 1) cycles after the read command. Another difference is that
tDQSCK may not be small compared to tCK (it might even be larger than tCK) and the difference between tDQSCK
(min.). and tDQSCK (max.) is significantly larger than in DLL-on mode.
The timing relations on DLL-off mode READ operation are shown at following Timing Diagram (CL = 6, BL8):
T0
Command
BA
READ
A
DQSdiff_DLL-on
T2
T3
T4
T5
T6
T7
T8
T9
od
Pr
CK, /CK
T1
RL = AL + CL = 6 (CL = 6, AL = 0)
CL = 6
DQ_DLL-on
CA0 CA1 CA2 CA3 CA4 CA5 CA6 CA7
RL (DLL-off) = AL + (CL - 1) = 5
tDQSCK(DLL-off)_min
uc
DQSdiff_DLL-off
CA0 CA1 CA2 CA3 CA4 CA5 CA6 CA7
DQ_DLL-off
tDQSCK(DLL-off)_max
DQSdiff_DLL-off
CA0 CA1 CA2 CA3 CA4 CA5 CA6 CA7
DQ_DLL-off
Data Sheet E1375E50 (Ver. 5.0)
83
t
DLL-Off Mode Read Timing Operation
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
DLL on/off switching procedure
DDR3 DLL-off mode is entered by setting MR1 bit A0 to “1”; this will disable the DLL for subsequent operations until
A0 bit set back to “0”.
DLL “on” to DLL “off” Procedure
To switch from DLL “on” to DLL “off” requires the frequency to be changed during self-refresh outlined in the
following procedure:
L
EO
1. Starting from Idle state (all banks pre-charged, all timings fulfilled, and DRAMs On-die Termination resistors,
RTT, must be in high impedance state before MRS to MR1 to disable the DLL.)
2. Set MR1 Bit A0 to “1” to disable the DLL.
3. Wait tMOD.
4. Enter self-refresh mode; wait until (tCKSRE) satisfied.
5. Change frequency, in guidance with Input Clock Frequency Change during Precharge Power-Down section.
6. Wait until a stable clock is available for at least (tCKSRX) at DRAM inputs. After stable clock, wait tCKSRX
before issuing SRX command.
7. Starting with the self-refresh exit command, CKE must continuously be registered high until all tMOD timings from
any MRS command are satisfied. In addition, if any ODT features were enabled in the mode registers when selfrefresh mode was entered, the ODT signal must continuously be registered low until all tMOD timings from any
MRS command are satisfied. If both ODT features were disabled in the mode registers when self-refresh mode
was entered, ODT signal can be registered low or high.
8. Wait tXS, then set Mode registers with appropriate values (especially an update of CL, CWL and WR may be
necessary. A ZQCL command may also be issued after tXS).
9. Wait for tMOD, then DRAM is ready for next command.
Ta
Tb
Tc Tc+1 Tc+2
Td
Te
Tf Tf+1 Tf+2
Tg Tg+1
Th
CK
/CK
Command
MRS
tCKSRE
tCKSRX
Pr
tMOD
SRE NOP
tXS
SRX
tMOD
MRS
Valid
tCKESR
CKE
od
ODT
Change Frequency
DLL Switch Sequence from DLL-on to DLL-off
t
uc
Data Sheet E1375E50 (Ver. 5.0)
84
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
DLL “off” to DLL “on” Procedure
To Switch from DLL “off” to DLL “on” (with required frequency change) during Self-Refresh:
EO
1. Starting from Idle state (all banks pre-charged, all timings fulfilled and DRAMs On-die Termination resistors (RTT)
must be in high impedance state before Self-Refresh mode is entered.)
2. Enter Self-refresh Mode, wait until tCKSRE satisfied.
3. Change frequency, in guidance with Input Clock Frequency Change during Precharge Power-Down section.
4. Wait until a stable clock is available for at least (tCKSRX) at DRAM inputs.
5. Starting with the self-refresh exit command, CKE must continuously be registered high until all tDLLK timing from
subsequent DLL Reset command is satisfied. In addition, if any ODT features were enabled in the mode
registers when Self-refresh mode was entered, the ODT signal must continuously be registered low until tDLLK
timings from subsequent DLL Reset command is satisfied. If both ODT features are disabled in the mode
registers when Self Refresh mode was entered, ODT signal can be registered low or high.
6. Wait tXS, then set MR1 bit A0 to “0” to enable the DLL.
7. Wait tMRD, then set MR0 bit A8 to “1” to start DLL Reset.
8. Wait tMRD, and then set Mode registers with appropriate values (especially an update of CL, CWL and WR may
be necessary. After tMOD is satisfied from any proceeding MRS command, a ZQCL command may also be
issued during or after tDLLK.)
9. Wait for tMOD, and then DRAM is ready for next command (remember to wait tDLLK after DLL Reset before
applying command requiring a locked DLL). In addition, wait also for tZQoper in case a ZQCL command was
issued.
Ta
Tb
Tc Tc+1Tc+2
Td
Te
Tf Tf+1 Tf+2
Tg
L
CK
/CK
Command
tCKSRE
tCKSRX
tDLLK
tXS
SRX
SRE NOP
tMRD
MRS
tMRD
MRS
MRS
Valid
CKE
Pr
tCKESR
ODTLoff + 1x tCK
ODT
od
Change Frequency
DLL Switch Sequence from DLL-Off to DLL-On
t
uc
Data Sheet E1375E50 (Ver. 5.0)
85
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Additive Latency (MR1)
A posted /CAS read or write command when issued is held for the time of the Additive Latency (AL) before it is
issued inside the device. The read or write posted /CAS command may be issued with or without auto precharge.
The Read Latency (RL) is controlled by the sum of AL and the /CAS latency (CL).
The value of AL is also added to compute the overall Write Latency (WL).
MRS (1) bits A4 and A3 are used to enable Additive latency.
MRS1
A3
0
0
0 (posted CAS disabled)
0
1
CL − 1
1
0
CL − 2
1
1
Reserved
EO
A4
AL*
Note: AL has a value of CL − 1 or CL − 2 as per the CL value programmed in the /CAS latency MRS setting.
L
t
uc
od
Pr
Data Sheet E1375E50 (Ver. 5.0)
86
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Write Leveling (MR1)
For better signal integrity, DDR3 memory module adopts fly by topology for the commands, addresses, control
signals and clocks. The fly by topology has benefits for reducing number of stubs and their length but in other
aspect, causes flight time skew between clock and strobe at every DRAM on DIMM. It makes Controller hard to
maintain tDQSS, tDSS and tDSH specification. Therefore, the controller should support ’write leveling’ in DDR3
SDRAM to compensate the skew.
Write leveling is a scheme to adjust DQS to CK relationship by the controller, with a simple feedback provided by the
DRAM. The memory controller involved in the leveling must have adjustable delay setting on DQS to align the rising
edge of DQS with that of the clock at the DRAM pin. DRAM asynchronously feeds back CK, sampled with the rising
edge of DQS, through the DQ bus. The controller repeatedly delays DQS until a transition from 0 to 1 is detected.
The DQS delay established through this exercise would ensure tDQSS, tDSS and tDSH specification. A conceptual
timing of this scheme is shown as below.
EO
Source
diff_Clock
diff_DQS
Destination
diff_Clock
diff_DQS
DQ
X
0
0
L
Push DQS to
capture 0-1 transition
DQ
X
1
1
Write leveling concept
Pr
DQS, /DQS driven by the controller during leveling mode must be terminated by the DRAM, based on the ranks
populated. Similarly, the DQ bus driven by the DRAM must also be terminated at the controller.
One or more data bits should carry the leveling feedback to the controller across the DRAM configurations ×4, ×8
and ×16. On a ×16 device, both byte lanes should be leveled independently. Therefore, a separate feedback
mechanism should be available for each byte lane. The upper data bits should provide the feedback of the upper
diff_DQS (diff_DQSU) to clock relationship whereas the lower data bits would indicate the lower diff_DQS
(diff_DQSL) to clock relationship.
[MR1 Setting Involved in the Leveling Procedure]
MR1 bit
Write leveling enable
A7
Output buffer mode (Qoff)
A12
Enable
Disable
1
0
0
1
Note: 1. Output buffer mode definition is consistent with DDR2
[DRAM Termination Function in The Leveling Mode]
ODT [email protected]
DQS, /DQS termination
De-asserted
Off
Asserted
On
Note
1
uc
Function
od
DRAM Setting for Write Leveling and DRAM Termination Function in That Mode
DRAM enters into Write leveling mode if A7 in MR1 set 1. And after finishing leveling, DRAM exits from write
leveling mode if A7 in MR1 set 0 (MR1 Setting Involved in the Leveling Procedure table).
Note that in write leveling mode, only DQS/DQS terminations are activated and deactivated via ODT pin, not like
normal operation (refer to the DRAM Termination Function in The Leveling Mode table)
DQs termination
Off
t
Off
Note: In Write Leveling Mode with its output buffer disabled (MR1 [bit7] = 1 with MR1 [bit12] = 1) all RTT_Nom
settings are allowed; in Write Leveling Mode with its output buffer enabled (MR1 [bit7] = 1 with MR1 [bit12] =
0) only RTT_Nom settings of RZQ/2, RZQ/4 and RZQ/6 are allowed.
Data Sheet E1375E50 (Ver. 5.0)
87
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Write Leveling Procedure
Memory controller initiates Leveling mode of all DRAMs by setting bit 7 of MR1 to 1. Since the controller levelizes
rank at a time, the output of other rank must be disabled by setting MR1 bit A12 to 1. Controller may assert ODT
after tMOD, time at which DRAM is ready to accept the ODT signal.
EO
Controller may drive DQS low and /DQS high after a delay of tWLDQSEN, at which time DRAM has applied on-die
termination on these signals. After tWLMRD, controller provides a single DQS, /DQS edge which is used by the
DRAM to sample CK driven from controller. tWLMRD timing is controller dependent.
DRAM samples CK status with rising edge of DQS and provides feedback on all the DQ bits asynchronously after
tWLO timing. There is a DQ output uncertainty of tWLOE defined to allow mismatch on DQ bits; there are no read
strobes (DQS, /DQS) needed for these DQs. Controller samples incoming DQ and decides to increment or
decrement DQS delay setting and launches the next DQS, /DQS pulse after some time, which is controller
dependent.
Once a 0 to 1 transition is detected, the controller locks DQS delay setting and write leveling is achieved for the
device. The below figure describes detailed timing diagram for overall procedure and the timing parameters are
shown in below figure.
tWLS T1
tWLH
CK*5
/CK
Command
**22
MRS
T2
tWLS
tWLH
**34
NOP
*3
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
tMOD
L
ODT
6
*6(min.) tDQSL (min.)
tDQSL* (min.) tDQSH
tDQSH (min.)
tWLDQSEN
diff_DQS*4
tWLOE
All DQs*1
tWLO
tWLMRD
tWLO
Pr
od
Notes:1. DDR3 SDRAM drives leveling feedback on all DQs.
2. MRS : Load MR1 to enter write leveling mode.
3. NOP : NOP or deselec
4. diff_DQS is the differential data strobe (DQS, /DQS). Timing reference points are the zero crossing. DQS is
shown with solid line, /DQS is shown with dotted line.
5. CK, /CK : CK is shown with solid dark line, where as /CK is drawn with dotted line.
6. DQS needs to fulfill minimum pulse width requirements tDQSH (min.) and tDQSL (min.) as defined for regular
writes; the max pulse width is system dependent.
Timing Details Write Leveling Sequence
t
uc
Data Sheet E1375E50 (Ver. 5.0)
88
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Write Leveling Mode Exit
The following sequence describes how the Write Leveling Mode should be exited:
1. After the last rising strobe edge(see T111), stop driving the strobe signals (see ~T128). Note: From now on, DQ
pins are in undefined driving mode, and will remain undefined, until tMOD after the respective MR command
(T145).
2. Drive ODT pin low (tIS must be satisfied) and continue registering low (see T128).
3. After the RTT is switched off: disable Write Level Mode via MR command (see T132).
4. After tMOD is satisfied (T145), any valid commands may be registered. (MR commands may already be issued
after tMRD (T136).
T111
T112
T116
T117
T128
T131
T132
T136
T145
MRS
Valid
CK, /CK
Command
EO
WL_off
tMOD
BA
1
tIS
Valid
Valid
Valid
tMRD
ODT
tODTL_off
RTT_DQS-/DQS
DQS-/DQS
L
RTT_DQ
tWLO + tWLOE
DQ
Result = 1
t
uc
od
Pr
Timing Details Write leveling Exit
Data Sheet E1375E50 (Ver. 5.0)
89
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
TDQS, /TDQS function (MR1)
TDQS (Termination Data Strobe) is a feature of ×8 DDR3 SDRAM that provides additional termination resistance
outputs that may be useful in some system configurations.
TDQS is not supported in ×4 or ×16 configurations. When enabled via the mode register, the same termination
resistance function is applied to the TDQS and /TDQS pins that are applied to the DQS and /DQS pins.
In contrast to the RDQS function of DDR2 SDRAM, TDQS provides the termination resistance function only. The
data strobe function of RDQS is not provided by TDQS.
The TDQS and DM functions share the same pin. When the TDQS function is enabled via the mode register, the DM
function is not supported. When the TDQS function is disabled, the DM function is provided and the /TDQS pin is
not used. See Table TDQS, /TDQS function for details.
The TDQS function is available in ×8 DDR3 SDRAM only and must be disabled via the mode register A11 = 0 in
MR1 for ×4 and ×16 configurations.
EO
[TDQS, /TDQS function]
[email protected]
TDQS enable
0
Disable
1
Enable
Notes: 1. If TDQS is enabled, the DM function is disabled.
2. When not used, TDQS function can be disabled to save termination power
3. TDQS function is only available for ×8 DRAM and must be disabled for ×4 and ×16
[Function matrix]
0
1
L
[email protected] (TDQS enable)
DM/TDQS
NU/ /TDQS
DM
High-Z
TDQS
/TDQS
t
uc
od
Pr
Data Sheet E1375E50 (Ver. 5.0)
90
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Extended Temperature Usage (MR2)
[Mode Register Description]
Field
Bits
Description
Description
ASR
A6
0
1
Manual SR Reference (SRT)
ASR enable (optional)
SRT
A7
0
1
Normal operating temperature range
Extended operating temperature range
EO
Auto self-refresh (ASR) (Optional)
when enabled, DDR3 SDRAM automatically
provides self-refresh power management
functions for all supported operating
temperature values. If not enabled, the SRT
bit must be programmed to indicate TC during
subsequent self-refresh operation
Self-Refresh Temperature (SRT) Range
If ASR = 0, the SRT bit must be programmed
to indicate TC during subsequent self-refresh
operation
If ASR = 1, SRT bit must be set to 0
Partial Array Self-Refresh (PASR)
Optional in DDR3 SDRAM: Users should refer to the DRAM supplier data sheet and/or the DIMM SPD to determine
if DDR3 SDRAM devices support the following options or requirements referred to in this material. If PASR (Partial
Array Self-Refresh) is enabled, data located in areas of the array beyond the specified address range shown in
figure of MR2 programming will be lost if Self-Refresh is entered. Data integrity will be maintained if tREFI
conditions are met and no Self-Refresh command is issued.
L
Pr
/CAS Write Latency (CWL)
The /CAS Write Latency is defined by MR2 bits [A3, A5], as shown in figure of MR2 programming. /CAS Write
Latency is the delay, in clock cycles, between the internal Write command and the availability of the first bit of input
data. DDR3 SDRAM does not support any half-clock latencies. The overall Write Latency (WL) is defined as
Additive Latency (AL) + /CAS Write Latency (CWL); WL = AL + CWL. For more information on the sup-ported CWL
and AL settings based on the operating clock frequency, refer to “Standard Speed Bins”. For detailed Write operation
refer to “WRITE Operation”.
od
Auto Self-Refresh Mode - ASR Mode (optional)
DDR3 SDRAM provides an Auto Self-Refresh mode (ASR) for application ease. ASR mode is enabled by setting
MR2 bit A6 = 1 and MR2 bit A7 = 0. The DRAM will manage self-refresh entry in either the Normal or Extended
(optional) Temperature Ranges. In this mode, the DRAM will also manage self-refresh power consumption when the
DRAM operating temperature changes, lower at low temperatures and higher at high temperatures.
If the ASR option is not supported by the DRAM, MR2 bit A6 must be set to 0.
If the ASR mode is not enabled (MR2 bit A6 = 0), the SRT bit (MR2 A7) must be manually programmed with the
operating temperature range required during self-refresh operation.
Support of the ASR option does not automatically imply support of the Extended Temperature Range.
t
uc
Self- Refresh Temperature Range - SRT
If ASR = 0, the Self-Refresh Temperature (SRT) Range bit must be programmed to guarantee proper self-refresh
operation. If SRT = 0, then the DRAM will set an appropriate refresh rate for self-refresh operation in the Normal
Temperature Range. If SRT = 1 then the DRAM will set an appropriate, potentially different, refresh rate to allow
self-refresh operation in either the Normal or Extended Temperature Ranges. The value of the SRT bit can effect
self-refresh power consumption, please refer to the IDD table for details.
For parts that do not support the Extended Temperature Range, MR2 bit A7 must be set to 0 and the DRAM should
not be operated outside the Normal Temperature Range.
Data Sheet E1375E50 (Ver. 5.0)
91
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
[Self-Refresh Mode Summary]
MR2
A6
A7
0
0
0
1
1
0
Allowed operating temperature
range
for self-refresh mode
Self-refresh operation
EO
Self-refresh rate appropriate for the Normal Temperature
Range
Self-refresh rate appropriate for either the Normal or
Extended Temperature Ranges. The DRAM must support
Extended Temperature Range. The value of the SRT bit
can effect self-refresh power consumption, please refer to
the Self- refresh Current for details.
ASR enabled (for devices supporting ASR and Normal
Temperature Range). Self-refresh power consumption is
temperature dependent
ASR enabled (for devices supporting ASR and Extended
Temperature Range). Self-refresh power consumption is
temperature dependent
1
0
1
1
Normal (0°C to +85°C)
Normal and Extended (0°C to
+95°C)
Normal (0°C to +85°C)
Normal and Extended (0°C to
+95°C)
Illegal
L
Dynamic ODT (Rtt_WR)
DDR3 SDRAM introduces a new feature “Dynamic ODT”. In certain application cases and to further enhance signal
integrity on the data bus, it is desirable that the termination strength of the DDR3 SDRAM can be changed without
issuing an MRS command. MR2 register locations A9 and A10 configure the Dynamic ODT settings. In Write
leveling mode, only RTT_Nom is available. For details on Dynamic ODT operation, refer to “Dynamic ODT”.
t
uc
od
Pr
Data Sheet E1375E50 (Ver. 5.0)
92
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Multi Purpose Register (MR3)
The Multi Purpose Register (MPR) function is used to read out predefined system timing calibration bit sequence.
(
EO
$%" $ " $%&" '$%& · ! " ! #$ #$
! ! ·
L
Conceptual Block Diagram of Multi Purpose Register
MR3
A2
A [1:0]
MPR
MPR-Loc
Don’t care
(0 or 1)
1
MR3 A [1:0]
Notes
Normal operation, no MPR transaction.
All subsequent reads will come from DRAM array.
All subsequent WRITEs will go to DRAM array.
Enable MPR mode, subsequent READ/READA commands defined by MR3
1
A [1:0] bits.
uc
0
Function
od
Pr
To enable the MPR, a mode register set (MRS) command must be issued to MR3 register with bit A2 = 1. Prior to
issuing the MRS command, all banks must be in the idle state (all banks precharged and tRP/tRPA met). Once the
MPR is enabled, any subsequent READ or READA commands will be redirected to the multi purpose register. The
resulting operation when a READ or READA command is issued is defined by MR3 bits [A1: A0] when the MPR is
enabled. When the MPR is enabled, only READ or READA commands are allowed until a subsequent MRS
command is issued with the MPR disabled (MR3 bit A2=0). Power-down mode, self-refresh, and any other nonREAD/READA command are not allowed during MPR enable mode. The /RESET function is supported during MPR
enable mode.
[Functional Description of MR3 Bits for MPR]
Note: 1. See Available Data Locations and Burst Order Bit Mapping for Multi Purpose Register table
t
Data Sheet E1375E50 (Ver. 5.0)
93
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
• One bit wide logical interface via all DQ pins during READ operation
 Register Read on ×4:
DQ [0] drives information from MPR.
DQ [3:1] drive the same information as DQ [0].
 Register Read on ×8:
DQ [0] drives information from MPR.
DQ [7:1] drive the same information as DQ [0].
 Register Read on ×16:
DQL [0] and DQU [0] drive information from MPR.
DQL [7:1] and DQU [7:1] drive the same information as DQL [0].
Note: A standardization of which DQ is used by DDR3 SDRAM for MPR reads is strongly recommended to ensure
functionality also for AMB2 on DDR3 FB-DIMM.
L
EO
• Addressing during Multi Purpose Register reads for all MPR agents:
 BA [2:0]: don’t care.
 A [1:0]: A [1:0] must be equal to ‘00’b. Data read burst order in nibble is fixed
 A [2]:
For BL8, A [2] must be equal to 0.
1
Burst order is fixed to [0,1,2,3,4,5,6,7] *
For Burst Chop 4 cases, the burst order is switched on nibble base
A [2] = 0, Burst order: 0,1,2,3 *1
1
A [2] = 1, Burst order: 4,5,6,7 *
 A [9:3]: don’t care
 A10(AP): don’t care
 A12(/BC): Selects burst chop mode on-the-fly, if enabled within MR0
 A11: don’t care
t
uc
od
Pr
• Regular interface functionality during register reads:
 Support two burst ordering which are switched with A2 and A [1:0] = 00.
 Support of read burst chop (MRS and on-the-fly via A12(/BC).

All other address bits (remaining column address bits including A10, all bank address bits) will be ignored
by the DDR3 SDRAM.
 Regular read latencies and AC timings apply.
 DLL must be locked prior to MPR Reads.
Note: Burst order bit 0 is assigned to LSB and burst order bit 7 is assigned to MSB of the selected MPR agent.
Data Sheet E1375E50 (Ver. 5.0)
94
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Functional Block Diagrams
Figures below provide functional block diagrams for the multi purpose register in ×4, ×8 and ×16 DDR3 SDRAM.
Memory Array
4×8
4×8
32
EO
Copy to
DQ[3:0]
DQ[3:0]
8
Q
Read Path
MPR
DQS
/DQS
DM
L
NibbleLane
Functional Block Diagram of Multi Purpose Register in ×4 DDR3 SDRAM
8×8
8×8
8
Q
MPR
od
64
Copy to
DQ[7:0]
Pr
Memory Array
DQ[7:0]
Read Path
DQS
/DQS
uc
DM
ByteLane
Functional Block Diagram of Multi Purpose Register in ×8 DDR3 SDRAM
t
Data Sheet E1375E50 (Ver. 5.0)
95
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Memory Array
DQU[7:0]
8×8
Read Path
8×8
DQSU
/DQSU
64
DMU
8×8
ByteLaneUpper
Copy to
DQU[7:0]
EO
8
8×8
8×8
64
Copy to
DQL[7:0]
DQL[7:0]
8
L
Q
Read Path
MPR
DQSL
/DQSL
DML
Pr
ByteLaneLower
Functional Block Diagram of Multi Purpose Register in ×16 DDR3 SDRAM
t
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Data Sheet E1375E50 (Ver. 5.0)
96
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Register Address Table
The table below provides an overview of the available data locations, how they are addressed by MR3 A [1:0] during
a MR0 to MR3, and how their individual bits are mapped into the burst order bits during a multi purpose register
read.
[Available Data Locations and Burst Order Bit Mapping for Multi Purpose Register]
MR3
A [2]
1
Function
00
Read
predefined
pattern for
system
calibration
EO
MR3
A [1:0]
1
1
10
11
RFU
RFU
Read
Address Burst Order and Data Pattern
A [2:0]
BL8
000
BC4
000
BC4
100
BL8
000
Burst order 0,1,2,3,4,5,6,7
1
BC4
000
Burst order 0,1,2,3
1
BC4
100
Burst order 4,5,6,7
1
BL8
000
Burst order 0,1,2,3,4,5,6,7
1
BC4
000
Burst order 0,1,2,3
1
BC4
100
Burst order 4,5,6,7
1
BL8
000
Burst order 0,1,2,3,4,5,6,7
1
BC4
000
Burst order 0,1,2,3,
1
BC4
100
Burst order 4,5,6,7
1
L
1
01
Burst
Length
RFU
Burst order 0,1,2,3,4,5,6,7
Pre-defined pattern [0,1,0,1,0,1,0,1]
Burst order 0,1,2,3,
Pre-defined pattern [0,1,0,1]
Burst order 4,5,6,7
Pre-defined pattern [0,1,0,1]
Notes
1
1
1
Note: 1. Burst order bit 0 is assigned to LSB and burst order bit 7 is assigned to MSB of the selected MPR agent.
tMPRR
od
[MPR Recovery Time tMPRR]
Symbol
Description
Pr
Relevant Timing Parameters
The following AC timing parameters are important for operating the Multi Purpose Register: tRP, tMRD, tMOD and
tMPRR.
Besides these timings, all other timing parameters needed for proper operation of the DDR3 SDRAM need to be
observed.
Multi Purpose Register Recovery Time, defined between end of MPR read burst and MRS which
reloads MPR or disables MPR function
t
uc
Data Sheet E1375E50 (Ver. 5.0)
97
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Protocol Examples
Protocol Example: Read Out Predetermined Read-Calibration Pattern
Multiple reads from Multi Purpose Register, in order to do system level read timing calibration based on
predetermined and standardized pattern.
L
EO
Protocol Steps:
• Precharge All
• Wait until tRP is satisfied
• MRS MR3, op-code “A2 = 1 “ and “A[1:0] = 00“
 Redirect all subsequent reads into the Multi Purpose Register, and load Pre-defined pattern into MPR.
• Wait until tMRD and tMOD are satisfied (Multi Purpose Register is then ready to be read). During the period
MR3 A2 =1, no data write operation is allowed.
• Read:
 A [1:0] = ‘00’ (Data burst order is fixed starting at nibble, always 00 here)
 A [2] = ‘0’ (For BL8, burst order is fixed as 0,1,2,3,4,5,6,7)
 A12(/BC) = 1 (use regular burst length of 8)
 All other address pins (including BA [2:0] and A10(AP)): don’t care.
• After RL = AL + CL, DRAM bursts out the predefined Read Calibration Pattern.
• Memory controller repeats these calibration reads until read data capture at memory controller is optimized.
• After end of last MPR read burst wait until tMPRR is satisfied.
• MRS MR3, op-code “A2 = 0“ and “A[1:0] = valid data but value are don’t care“
 All subsequent read and write accesses will be regular READs and WRITEs from/to the DRAM array.
• Wait until tMRD and tMOD are satisfied
• Continue with “regular” DRAM commands, like activate a memory bank for regular read or write access,
T0
T4 T5
T9
T17 T18 T19 T20 T21 T22 T23 T24 T25 T26 T27 T28 T29 T30 T31
Pr
CK
/CK
tMOD
tMRD
Command
*1
PALL
NOP
MRS
tRP
NOP
READ
A[1:0]
0
Valid
0
*2
*2
A[2]
1
0
A[9:3]
00
Valid
0
Valid
0
Valid
A[11]
MRS
A12(/BC)
0
Valid
A[15:13]
0
Valid
tMPRR
3
Valid
0
00
0
0
uc
*1
NOP
od
BA
1
NOP
tMOD
3
A10(AP)
T39
0
0
DQS, /DQS
RL
DQ
t
Notes: 1. READ with BL8 either by MRS or OTF
2. Memory Control must drive 0 on A[2:0]
VIH or VIL
MPR Readout of Predefined Pattern, BL8 fixed Burst Order, Single Readout
Data Sheet E1375E50 (Ver. 5.0)
98
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
T0
T4 T5
T9
T17 T18 T19 T20 T21 T22 T23 T24 T25 T26 T27 T28 T29 T30 T31
T43
CK
/CK
tMRD
Command
PALL
NOP
MRS
tRP
tMOD
NOP
tMOD
3
BA
A[1:0]
*1
READ
*1
READ
NOP
MRS
NOP
tCCD
Valid
0
0
3
Valid
*2
0
*2
*2
Valid
*2
A[2]
1
0
A[9:3]
00
Valid
Valid
00
0
Valid
Valid
0
0
Valid
Valid
0
A10, AP
1
A[11]
NOP
tMPRR
0
EO
*1
0
*1
A12(/BC)
0
Valid
Valid
0
A[15:13]
0
Valid
Valid
0
DQS, /DQS
RL
RL
DQ
L
Notes: 1. READ with BL8 either by MRS or OTF
2. Memory Control must drive 0 on A[2:0]
VIH or VIL
MPR Readout of Predefined Pattern, BL8 Fixed Burst Order, Back-to-Back Readout
T0
CK
T4 T5
T9
T17 T18 T19 T20 T21 T22 T23 T24 T25 T26 T27 T28 T29 T30 T31
T43
/CK
tMOD
Command
PALL
NOP
MRS
tRP
0
A[1:0]
1
A[2]
A10(AP)
1
*1
READ
NOP
NOP
tCCD
Valid
0
0
00
Valid
0
Valid
A[11]
0
Valid
A12(/BC)
0
Valid
A[15:13]
0
Valid
*1
1
*2
Valid
*4
0
Valid
00
Valid
0
Valid
*1
0
Valid
0
RL
RL
DQ
0
Valid
uc
DQS, /DQS
0
*3
NOP
3
Valid
*2
MRS
tMPRR
od
A[9:3]
NOP
*1
READ
tMOD
3
BA
Pr
tMRD
VIH or VIL
MPR Readout Predefined Pattern, BC4, Lower Nibble Then Upper Nibble
Data Sheet E1375E50 (Ver. 5.0)
99
t
Notes:1. READ with BC4 either by MRS or OTF
2. Memory Control must drive 0 on A[1:0]
3. A[2] = 0 selects lower 4 nibble bits 0 ... 3
4. A[2] = 1 selects upper 4 nibble bits 4 ... 7
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
T0
T4 T5
T9
T17 T18 T19 T20 T21 T22 T23 T24 T25 T26 T27 T28 T29 T30 T31
T43
CK, /CK
tMOD
tMRD
Command
PALL
NOP
MRS
tRP
NOP
*1
READ
*1
READ
NOP
NOP
tCCD
tMOD
BA
3
Valid
A[1:0]
0
0
MRS
tMPRR
3
Valid
*2
0
*4
*2
Valid
*3
A[2]
1
1
A[9:3]
00
Valid
Valid
00
0
Valid
Valid
0
A10, AP
1
A[11]
NOP
0
0
Valid
0
Valid
Valid
0
A[15:13]
0
Valid
Valid
0
EO
0
A12(/BC)
0
Valid
*1
*1
DQS, /DQS
RL
RL
DQ
Notes:1. READ with BC4 either by MRS or OTF
2. Memory Control must drive 0 on A[1:0]
3. A[2] = 0 selects lower 4 nibble bits 0 ... 3
4. A[2] = 1 selects upper 4 nibble bits 4 ... 7
L
VIH or VIL
MPR Readout of Predefined Pattern, BC4, Upper Nibble Then Lower Nibble
t
uc
od
Pr
Data Sheet E1375E50 (Ver. 5.0)
100
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Operation of the DDR3 SDRAM
Read Timing Definition
Read timing is shown in the following Figure and is applied when the DLL is enabled and locked.
Rising data strobe edge parameters:
• tDQSCK min/max describes the allowed range for a rising data strobe edge relative to CK, /CK.
• tDQSCK is the actual position of a rising strobe edge relative to CK, /CK.
• tQSH describes the DQS, /DQS differential output high time.
• tDQSQ describes the latest valid transition of the associated DQ pins.
• tQH describes the earliest invalid transition of the associated DQ pins.
/CK
L
EO
Falling data strobe edge parameters:
• tQSL describes the DQS, /DQS differential output low time.
• tDQSQ describes the latest valid transition of the associated DQ pins.
• tQH describes the earliest invalid transition of the associated DQ pins.
tDQSQ; both rising/falling edges of DQS, no tAC defined.
CK
tDQSCK(min.)
tDQSCK(min.)
tDQSCK(max.)
tDQSCK(max.)
Pr
Rising Strobe
Region
Rising Strobe
Region
tDQSCK
tQSH
DQS
tQSL
tQH
tQH
tDQSQ
tDQSQ
Associated
DQ Pins
READ Timing Definition
t
uc
od
/DQS
tDQSCK
Data Sheet E1375E50 (Ver. 5.0)
101
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
•
•
•
•
•
CK, /CK crossing to DQS, /DQS crossing
tDQSCK; rising edges only of CK and DQS
tQSH; rising edges of DQS to falling edges of DQS
tQSL; rising edges of / DQS to falling edges of /DQS
tLZ (DQS), tHZ (DQS) for preamble/postamble (see tHZ (DQS), tLZ (DQS)
RL Measured to this point
CK
/CK
tDQSCK(min.)
tDQSCK(min.)
tDQSCK(min.)
tDQSCK(min.)
EO
tLZ(DQS)(min.)
DQS, /DQS
Early strobe
tQSH
tQSL
tRPRE
tRPST
Bit0
Bit1
Bit2
tDQSCK(max.)
Bit3
tDQSCK(max.)
Bit4
Bit5
tDQSCK(max.)
Bit6
Bit7
tDQSCK(max.)
L
tLZ(DQS)(max.)
tHZ(DQS)(max.)
tQSH
tQSL
tRPRE
DQS, /DQS
Late strobe
tRPST
Bit1
Bit2
Bit3
Bit4
Pr
Bit0
Bit5
Bit6
Bit7
Notes: Within a burst, rising strobe edge is not necessarily fixed to be always at tDQSCK(min.) or tDQSCK(max.).
Instead, rising strobe edge can vary between tDQSCK(min.) or tDQSCK(max.) within a burst.
Likewise tLZ(DQS)(min.) and tHZ(DQS)(min.) are not tied to tDQSCK(min.) (early strobe case) and
tLZ(DQS)(max.) and tHZ(DQS)(max.) are not tied to tDQSCK(max.) (late strobe case).
The minimum pulse width of read preamble is defined by tRPRE(min.).
The minimum pulse width of read preamble is defined by tRPST(min.).
DDR3 Clock to Data Strobe Relationship
t
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Data Sheet E1375E50 (Ver. 5.0)
102
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
• DQS, /DQS crossing to Data Output
• tDQSQ; both rising/falling edges of DQS, no tAC defined
T0
T4
T5
T6
T7
T8
T9
T10
/CK
CK
Command*3
NOP
READ
RL = AL + CL
Address*4
Bank
Coln
tRPRE
tQH
tQH
tRPST
DQS, /DQS
EO
DQ*2
(Last data valid)
tDQSQ(max.)
tDQSQ(max.)
tLZ(DQ)(max.)
tLZ(DQ)(min.)
tHZ(DQ)(max.)
Dout
n
Dout
n
DQ*2
(First data no longer valid)
Dout
n+1
Dout
n+1
Dout
n
All DQS collectively
Dout
n+2
Dout
n+2
Dout
n+1
L
Data valid
Dout
n+2
Dout
n+3
Dout
n+3
Dout
n+4
Dout
n+4
Dout
n+3
Dout
n+4
Dout
n+5
Dout
n+5
Dout
n+5
Dout
n+6
Dout
n+6
Dout
n+6
Dout
n+7
Dout
n+7
Dout
n+7
Data valid
VIH or VIL
Pr
Notes: 1. BL8, RL = 5(AL = 0, CL = 5).
2. Dout n = data-out from column n.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by MR0 bit [A1, A0] = [0, 0] and A12 = 1 during READ command at T0.
5. Output timings are referenced to VDDQ/2, and DLL on for locking.
6. tDQSQ defines the skew between DQS, /DQS to data and does not define DQS, /DQS to clock.
7. Early data transitions may not always happen at the same DQ.
Data transitions of a DQ can vary(either early or late) within a busy.
DDR3 Data Strobe to Data Relationship
t
uc
od
Data Sheet E1375E50 (Ver. 5.0)
103
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
tLZ (DQS), tLZ (DQ), tHZ (DQS), tHZ (DQ) Notes
tHZ and tLZ transitions occur in the same access time as valid data transitions. These parameters are referenced to
a specific voltage level which specifies when the device output is no longer driving tHZ(DQS) and tHZ(DQ), or begins
driving tLZ(DQS), tLZ(DQ). The figure below shows a method to calculate the point when device is no longer driving
tHZ(DQS) and tHZ(DQ), or begins driving tLZ(DQS), tLZ(DQ) by measuring the signal at two different voltages. The
actual voltage measurement points are not critical as long as the calculation is consistent. The parameters
tLZ(DQS), tLZ(DQ), tHZ(DQS), and tHZ(DQ) are defined as singled ended.
tLZ (DQS): CK-/CK rising crossing at RL-1
tLZ (DQ): CK-/CK rising crossing at RL
tHZ (DQS), tHZ (DQ) with BL8: CK-/CK rising crossing at RL + 4nCK
tHZ (DQS), tHZ (DQ) with BL4: CK-/CK rising crossing at RL + 2nCK
CK
CK
EO
/CK
/CK
tLZ
tLZ
VTT + 2x mV
VOH − x mV
VTT + x mV
VOH − 2x mV
tLZ (DQS), tLZ (DQ)
L
VTT − x mV
VTT − 2x mV
tHZ (DQS), tHZ (DQ)
T2
T1
T1
T2
tLZ (DQS), tLZ (DQ) begin point = 2 ´ T1 - T2
VOL + 2x mV
VOL + x mV
tHZ (DQS), tHZ (DQ) end point = 2 ´ T1 - T2
Method for Calculating Transitions and Endpoints
t
uc
od
Pr
Data Sheet E1375E50 (Ver. 5.0)
104
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Read Operation
During read or write command DDR3 will support BC4 and BL8 on the fly using address A12 during the READ or
WRITE (auto precharge can be enabled or disabled).
• A12 = 0, BC4 (BC4 = burst chop, tCCD = 4)
• A12 = 1, BL8
A12 will be used only for burst length control, not a column address.
EO
The Burst Read command is initiated by having /CS and /CAS low while holding /RAS and /WE high at the rising
edge of the clock. The address inputs determine the starting column address for the burst. The delay from the start
of the command to when the data from the first cell appears on the outputs is equal to the value of the read latency
(RL). The data strobe output (DQS) is driven low 1 clock cycle before valid data (DQ) is driven onto the data bus.
The first bit of the burst is synchronized with the rising edge of the data strobe (DQS). Each subsequent data-out
appears on the DQ pin in phase with the DQS signal in a source synchronous manner.
The RL is equal to an additive latency (AL) plus /CAS latency (CL). The CL is defined by the mode register 0 (MR0),
similar to the existing SDR and DDR-I SDRAMs. The AL is defined by the mode register 1
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
CK
/CK
Command*3
L
Address*4
NOP
READ
Bank
Col n
tRPST
tRPRE
DQS, /DQS
Pr
DQ*2
Dout Dout Dout Dout Dout Dout Dout Dout
n
n+1 n+2 n+3 n+4 n+5 n+6 n+7
CL = 5
RL = AL + CL
od
VIH or VIL
Notes: 1. BL8, AL = 0, RL = 5, CL = 5
2. Dout n = data-out from column n.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by MR0 bit [A1, A0] = [0, 0] or MR0 bit [A1, A0] = [0, 1] and A12 = 1 during READ command at T0.
Burst Read Operation, RL = 5
t
uc
Data Sheet E1375E50 (Ver. 5.0)
105
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
CK
/CK
Command*3
READ
Address*4
Bank
Col n
NOP
tRPST
tRPRE
DQS, /DQS*2
Dout Dout Dout Dout Dout Dout Dout Dout
n
n+1 n+2 n+3 n+4 n+5 n+6 n+7
DQ
EO
AL = 4
CL = 5
RL = AL + CL
VIH or VIL
Notes: 1. BL8, RL = 9, AL = (CL − 1), CL = 5
2. Dout n = data-out from column n.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by either MR0 bit [A1, A0] = [0, 0] or MR0 bit [A1, A0] = [0, 1] and A12 = 1 during READ command at T0.
L
T0
CK
T3
Burst Read Operation, RL = 9
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
/CK
READ
NOP
tCCD
Address*4
Bank
Col n
Pr
Command*3
READ
NOP
Bank
Col b
tRPST
tRPRE
od
DQS, /DQS
Dout Dout Dout Dout Dout Dout Dout Dout Dout Dout Dout Dout Dout Dout Dout Dout
n
n+1 n+2 n+3 n+4 n+5 n+6 n+7
b
b+1 b+2 b+3 b+4 b+5 b+6 b+7
DQ*2
RL = 5
RL = 5
READ (BL8) to READ (BL8)
t
uc
VIH or VIL
Notes: 1. BL8, RL = 5 (CL = 5, AL = 0).
2. Dout n (or b) = data-out from column n (or column b).
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by MR0 bit [A1, A0] = [0, 0] or MR0 bit [A1, A0] = [0, 1] and A12 = 1 during READ command at T0 and T4.
Data Sheet E1375E50 (Ver. 5.0)
106
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
T0
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
CK
/CK
Command*3
READ
NOP
READ
NOP
tCCD
Address*4
Bank
Col b
Bank
Col n
tRPST
tRPRE
tRPST
tRPRE
DQS, /DQS
Dout Dout Dout Dout
n
n+1 n+2 n+3
EO
DQ*2
Dout Dout Dout Dout
b
b+1 b+2 b+3
RL = 5
RL = 5
VIH or VIL
Notes: 1. BC4, RL = 5 (CL = 5, AL = 0).
2. Dout n (or b) = data-out from column n (or column b).
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BC4 setting activated by MR0 bit [A1, A0] = [1, 0] or MR0 bit [A1, A0] = [0, 1] and A12 = 0 during READ command at T0 and T4.
L
T0
T3
T4
READ (BC4) to READ (BC4)
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14 T15
CK
Command*3
Pr
/CK
READ
WRIT
NOP
NOP
tWR
READ to WRIT command delay = RL + tCCD + 2tCK − WL
Address*4
Bank
Col n
tBL = 4 clocks
tWTR
Bank
Col b
DQS, /DQS
tRPST
Dout Dout Dout Dout Dout Dout Dout Dout
n
n+1 n+2 n+3 n+4 n+5 n+6 n+7
DQ*2
RL = 5
tWPRE
od
tRPRE
Din
b
Din
b+1
Din
b+2
Din
b+3
tWPST
Din
b+4
Din
b+5
Din
b+6
Din
b+7
WL = 5
READ (BL8) to WRITE (BL8)
t
uc
VIH or VIL
Notes: 1. BL8, RL = 5 (CL = 5, AL = 0), WL = 5 (CWL = 5, AL = 0).
2. Dout n = data-out from column n, Din b= data-in from column b.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by MR0 bit [A1, A0] = [0, 0] or MR0 bit [A1, A0] = [0, 1] and A12 = 1 during READ command at T0 and WRIT command T6.
Data Sheet E1375E50 (Ver. 5.0)
107
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
T0
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14 T15
CK
/CK
Command*3
READ
NOP
WRIT
NOP
READ to WRIT Command delay = RL + tCCD/2 + 2tCK − WL
tWR
tBL = 4 clocks
tWTR
Bank
Col n
Address*4
Bank
Col b
tRPST
tRPRE
tWPST
tWPRE
DQS, /DQS
Dout Dout Dout Dout
n
n+1 n+2 n+3
EO
DQ*2
RL = 5
Din
b
Din
b+1
Din
b+2
Din
b+3
WL = 5
VIH or VIL
Notes: 1. BC4, RL = 5 (CL = 5, AL = 0), WL = 5 (CWL = 5, AL = 0).
2. Dout n = data-out from column n, Din b= data-in from column b.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BC4 setting activated by MR0 bit [A1, A0] = [0, 1] and A12 = 0 during READ command at T0 and WRIT command T4.
READ (BC4) to WRITE (BC4) OTF
/CK
Command*3
T4
L
T0
CK
READ
T5
T6
T7
T8
T9
T11
T12
T13
T14
NOP
READ
NOP
T10
Address*4
Bank
Col n
Pr
tCCD
Bank
Col b
tRPRE
DQS, /DQS
tRPST
od
Dout Dout Dout Dout Dout Dout Dout Dout Dout Dout Dout Dout
n
n+1 n+2 n+3 n+4 n+5 n+6 n+7
b
b+1 b+2 b+3
DQ*2
RL = 5
RL = 5
VIH or VIL
READ (BL8) to READ (BC4) OTF
t
uc
Notes: 1. RL = 5 (CL = 5, AL = 0).
2. Dout n (or b) = data-out from column n (or column b).
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BC4 setting activated by MR0 bit [A1, A0] = [0, 1] and A12 = 0 during READ command at T4.
BL8 setting activated by MR0 bit [A1, A0] = [0, 1] and A12 = 1 during READ command at T0.
Data Sheet E1375E50 (Ver. 5.0)
108
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
T0
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
CK
/CK
Command*3
READ
NOP
READ
NOP
tCCD
Address*4
Bank
Col n
Bank
Col b
tRPST
tRPRE
tRPRE
tRPST
DQS, /DQS
Dout Dout Dout Dout
n
n+1 n+2 n+3
EO
DQ*2
Dout Dout Dout Dout Dout Dout Dout Dout
b
b+1 b+2 b+3 b+4 b+5 b+6 b+7
RL = 5
RL = 5
VIH or VIL
Notes: 1. RL = 5 (CL = 5, AL = 0).
2. Dout n (or b) = data-out from column n (or column b).
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BC4 setting activated by MR0 bit [A1, A0] = [0, 1] and A12 = 0 during READ command at T0.
BL8 setting activated by MR0 bit [A1, A0] = [0, 1] and A12 = 1 during READ command at T4.
L
T0
CK
T3
T4
READ (BC4) to READ (BL8) OTF
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14 T15
/CK
READ
NOP
Pr
Command*3
NOP
WRIT
tWR
READ to WRIT command delay = RL + tCCD/2 + 2tCK − WL
Address*4
Bank
Col n
tBL = 4 clocks
tWTR
Bank
Col b
tRPRE
Dout Dout Dout Dout
n
n+1 n+2 n+3
DQ*2
RL = 5
tWPST
tWPRE
od
DQS, /DQS
tRPST
Din
b
Din
b+1
Din
b+2
Din
b+3
Din
b+4
Din
b+5
Din
b+6
Din
b+7
WL = 5
VIH or VIL
READ (BC4) to WRITE (BL8) OTF
t
uc
Notes: 1. RL = 5 (CL = 5, AL = 0), WL = 5 (CWL = 5, AL = 0).
2. Dout n = data-out from column n , Din b= data-in from column b.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BC4 setting activated by MR0 bit [A1, A0] = [0, 1] and A12 = 0 during READ command at T0.
BL8 setting activated by MR0 bit [A1, A0] = [0, 1] and A12 = 1 during WRIT command at T4.
Data Sheet E1375E50 (Ver. 5.0)
109
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
T0
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14 T15
CK
/CK
Command*3
READ
NOP
WRIT
NOP
READ to WRIT command delay = RL + tCCD + 2tCK − WL
tWR
tBL = 4 clocks
tWTR
Address*4
Bank
Col n
Bank
Col b
tRPST
tRPRE
tWPRE
tWPST
DQS, /DQS
Dout Dout Dout Dout Dout Dout Dout Dout
n
n+1 n+2 n+3 n+4 n+5 n+6 n+7
EO
DQ*2
RL = 5
Din
b
Din
b+1
Din
b+2
Din
b+3
WL = 5
VIH or VIL
Notes: 1. RL = 5 (CL = 5, AL = 0), WL = 5 (CWL = 5, AL = 0).
2. Dout n = data-out from column n, n Din b= data-in from column b.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by MR0 bit [A1, A0] = [0, 1] and A12 = 1 during READ command at T0.
BC4 setting activated by MR0 bit [A1, A0] = [0, 1] and A12 = 0 during WRIT command at T6.
L
T0
CK
/CK
READ
T1
T2
T3
T4
T5
NOP
Bank
Col n
T7
T8
T10
T11
tRP
tRPST
tRPRE
od
DQS, /DQS
T9
NOP
PRE
tRTP = 4 nCK
Address*4
T6
Pr
Command*3
READ (BL8) to WRITE (BC4) OTF
Dout Dout Dout Dout Dout Dout Dout Dout
n
n+1 n+2 n+3 n+4 n+5 n+6 n+7
DQ*2
CL = 5
RL = AL + CL
uc
VIH or VIL
Notes: 1. BL8, AL = 0, RL = 5, CL = 5
2. Dout n = data-out from column n.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by MR0 bit [A1, A0] = [0, 0] or MR0 bit [A1, A0] = [0, 1] and A12 = 1 during READ command at T0.
Burst Read Precharge Operation, RL = 5
t
Data Sheet E1375E50 (Ver. 5.0)
110
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
CK
/CK
Command*3
NOP
PRE
NOP
READ
tRTP = 4 nCK
Address*4
tRP
Bank
Col n
tRPST
tRPRE
DQS, /DQS*2
Dout Dout Dout Dout Dout Dout Dout Dout
n
n+1 n+2 n+3 n+4 n+5 n+6 n+7
EO
DQ
AL = 4
CL = 5
RL = AL + CL
Internal Read command starls here
VIH or VIL
L
Notes: 1. BL8, RL = 9, AL = (CL - 1), CL = 5
2. Dout n = data-out from column n.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by either MR0 bit [A1, A0] = [0, 0] or MR0 bit [A1, A0] = [0, 1] and A12 = 1 during READ command at T0.
Burst Read Precharge Operation, RL = 9
t
uc
od
Pr
Data Sheet E1375E50 (Ver. 5.0)
111
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Write Timing Definition
/CK*1
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
WRIT
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
CK
Command*3
WL = AL + CWL
Address*4
Bank,
Col n
tDQSS tDSH
tWPRE (min)
tDSH
tDSH
tDSH
tWPST (min)
tDQSS(min)
DQS, /DQS
EO
tDQSL
tDQSH
tDQSH
tDQSH
tDQSH
tDQSL
tDQSL
tDQSL
tDQSL (min)
tDQSH (min)
tDSS
tDSS
Din
n+1
Din
n
DQ*2
tWPRE (min)
Din
n+2
tDSH
tDSS
Din
n+3
Din
n+4
tDSH
tDSS
Din
n+5
tDSS
Din
n+6
tDSH
Din
n+7
tDSH
tWPST (min)
DQS, /DQS
tDQSH
tDQSH
tDQSH
tDQSH
tDQSL
tDQSL
tDQSL
tDQSL (min)
tDQSL
L
DQ*2
tDQSH (min)
tDSS
tDSS
Din
n+1
Din
n
tDSS
Din
n+2
Din
n+3
tDSS
Din
n+4
Din
n+5
tDSS
Din
n+6
Din
n+7
tDQSS
DQS, /DQS
Pr
tDSH
tDQSS(max)
tDSH
tDSH
tDSH
tWPST (min)
tWPRE (min)
tDQSLtDQSHtDQSLtDQSHtDQSLtDQSHtDQSLtDQSH
tDQSL (min)
tDQSH (min)
tDSS
tDSS
Notes: 1.
2.
3.
4.
5.
Din
n+1
tDSS
Din
n+2
Din
n+3
tDSS
tDSS
Din
n+4
Din
n+5
od
Din
n
DQ*2
Din
n+6
Din
n+7
BL8, WL = 5 (AL = 0, CWL = 5)
VIH or VIL
Din n = data-in from column n.
NOP commands are shown for ease of illustration; other commands may be valid at these times.
BL8 setting activated by MR0 bit [A1, A0] = [0, 0] or MR0 bit [A1, A0] = [0, 1] and A12 = 1 during WRIT command at T0.
tDQSS must be met at each rising clock edge.
Write Timing Definition
t
uc
Data Sheet E1375E50 (Ver. 5.0)
112
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Write Operation
During read or write command DDR3 will support BC4 and BL8 on the fly using address A12 during the READ or
WRITE (auto precharge can be enabled or disabled).
• A12 = 0, BC4 (BC4 = burst chop, tCCD = 4)
• A12 = 1, BL8
A12 will be used only for burst length control, not a column address.
EO
The Burst Write command is initiated by having /CS, /CAS and /WE low while holding /RAS high at the rising edge of
the clock. The address inputs determine the starting column address. Write latency (WL) is equal to (AL + CWL). A
data strobe signal (DQS) should be driven low (preamble) one clock prior to the WL. The first data bit of the burst
cycle must be applied to the DQ pins at the first rising edge of the DQS following the preamble. The tDQSS
specification must be satisfied for write cycles. The subsequent burst bit data are issued on successive edges of the
DQS until the burst length of 4 is completed. When the burst has finished, any additional data supplied to the DQ
pins will be ignored. The DQ Signal is ignored after the burst write operation is complete. The time from the
completion of the burst write to bank precharge is the write recovery time (tWR).
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
CK
/CK
Command*3
NOP
WRIT
L
WL = AL + CWL
Address*4
Bank
Col n
DQ*2
tWPST
Pr
DQS, /DQS
tWPRE
Din
n
Din
n+1
Din
n+2
Din
n+3
Din
n+4
Din
n+5
Din
n+6
Din
n+7
od
VIH or VIL
Notes: 1. BL8, WL = 5 (AL = 0, CWL = 5)
2. Din n = data-in from column n.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by either MR0 bit [A1, A0] = [0, 0] or MR0 bit [A1, A0] = [0, 1] and A12 = 1 during WRIT command at T0.
Burst Write Operation, WL = 5
t
uc
Data Sheet E1375E50 (Ver. 5.0)
113
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
CK
/CK
Command*3
WRIT
Address*4
Bank
Col n
NOP
tWPST
tWPRE
DQS, /DQS
Din
n
DQ*2
EO
AL = 4
Din
n+1
Din
n+2
Din
n+3
Din
n+4
Din
n+5
Din
n+6
Din
n+7
CWL = 5
WL = AL + CWL
VIH or VIL
Notes: 1. BL8, WL = 9 (AL = (CL − 1), CL = 5, CWL = 5)
2. Din n = data-in from column n.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by MR0 bit [A1, A0] = [0, 0] or MR0 bit [A1, A0] = [0, 1] and A12 = 1 during WRITcommand at T0.
L
T0
CK
T1
T2
Burst Write Operation, WL = 9
T3
T4
T5
T6
T7
T8
T9
T10
Tn
Tn+1
Tn+2
/CK
Address*4
WRIT
Bank
Col n
Pr
Command*3
NOP
tWPRE
Din
n
DQ*2
WL = 5
Notes:
tWTR*5
Bank
Col b
tWPST
od
DQS, /DQS
READ
Din
n+1
Din
n+2
Din
n+3
RL = 5
VIH or VIL
uc
1. BC4, WL = 5, RL = 5.
2. Din n = data-in from column n; Dout b = data-out from column b.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BC4 setting activated by MR0 bit [A1, A0] = [1, 0] during WRIT command at T0 and READ command at Tn.
5. tWTR controls the write to read delay to the same device and starts with the first rising clock edge after the
last write data shown at T7.
Write (BC4) to Read (BC4) Operation
t
Data Sheet E1375E50 (Ver. 5.0)
114
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
Tn
Tn+1
Tn+2
CK
/CK
Command*3
NOP
WRIT
PRE
tWR*5
Address*4
Bank
Col n
tWPRE
tWPST
DQS, /DQS
EO
Din
n
DQ*2
Notes:
Write (BC4) to Precharge Operation
WRIT
T1
T2
NOP
T3
T4
T5
T6
T7
T8
T9
T10
tCCD
Address*4
Bank
Col n
T11
T12
tWR
tBL = 4 clocks
tWTR
Bank
Col b
tWPRE
DQS, /DQS
Din
n
WL = 5
tWPST
od
DQ*2
T13
NOP
WRIT
Pr
Command*3
Din
n+3
WL = 5
L
/CK
Din
n+2
VIH or VIL
1. BC4, WL = 5, RL = 5.
2. Din n = data-in from column n.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BC4 setting activated by MR0 bit [A1, A0] = [1, 0] during WRIT command at T0.
5. The write recovery time (tWR) referenced from the first rising clock edge after the last write data shown at T7.
tWR specifies the last burst write cycle until the precharge command can be issued to the same bank .
T0
CK
Din
n+1
Din
n+1
Din
n+2
Din
n+3
Din
n+4
Din
n+5
Din
n+6
Din
n+7
Din
b
Din
b+1
Din
b+2
Din
b+3
Din
b+4
Din
b+5
Din
b+6
Din
b+7
WL = 5
WRITE (BL8) to WRITE (BL8) OTF
t
uc
Notes: 1. BL8, WL = 5 (CWL = 5, AL = 0)
VIH or VIL
2. Din n (or b) = data-in from column n (or column b).
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by either MR0 bit [A1, A0] = [0, 0] or MR0 bit [A1, A0] = [0, 1] and A12 = 1 during WRIT command at T0 and T4.
Data Sheet E1375E50 (Ver. 5.0)
115
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
CK
/CK
Command*3
NOP
WRIT
NOP
WRIT
tCCD
tWR
tBL = 4 clocks
tWTR
Address*4
Bank
Col n
Bank
Col b
tWPRE
tWPRE
tWPST
tWPST
DQS, /DQS
EO
DQ*2
Din
n
WL = 5
Din
n+1
Din
n+2
Din
b
Din
n+3
Din
b+1
Din
b+2
Din
b+3
WL = 5
Notes: 1. BC4, WL = 5 (CWL = 5, AL = 0)
2. Din n (or b) = data-in from column n (or column b).
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BC4 setting activated by either MR0 bit [A1, A0] = [0, 1] and A12 = 0 during WRIT command at T0 and T4.
/CK
Address*4
T1
T2
T3
T4
T5
T6
T8
tWPRE
DQS, /DQS
T10
T11
WL = 5
Din
n+1
Din
n+2
Din
n+3
Din
n+4
Din
n+5
Din
n+6
T12
T13
T14
READ
NOP
tWTR
Bank
Col b
tWPST
od
Din
n
DQ*2
Notes:
T9
NOP
WRIT
Bank
Col n
T7
Pr
Command*3
WRITE (BC4) to WRITE (BC4) OTF
L
T0
CK
VIH or VIL
Din
n+7
RL = 5
uc
1. RL = 5 (CL = 5, AL = 0), WL = 5 (CWL = 5, AL = 0)
VIH or VIL
2. Din n = data-in from column n; DOUT b = data-out from column b.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by MR0 bit [A1, A0] = [0, 0] or MR0 bit [A1, A0] = [0, 1] and A12 = 1 during WRIT command at T0.
READ command at T13 can be either BC4 or BL8 depending on MR0 bit [A1, A0] and A12 status at T13.
WRITE (BL8) to READ (BC4/BL8) OTF
t
Data Sheet E1375E50 (Ver. 5.0)
116
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
READ
NOP
CK
/CK
Command*3
NOP
WRIT
tBL = 4 clocks
Address*4
tWTR
Bank
Col b
Bank
Col n
tWPRE
tWPST
DQS, /DQS
Din
n
EO
DQ*2
Din
n+1
Din
n+2
Din
n+3
RL = 5
WL = 5
Notes: 1. BC4, RL = 5 (CL = 5, AL = 0), WL = 5 (CWL = 5, AL = 0)
2. Din n = data-in from column n; Dout b = data-out from column b.
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BC4 setting activated by MR0 bit [A1, A0] = [0, 1] and A12 = 0 during WRIT command at T0.
READ command at T13 can be either BC4 or BL8 depending on MR0 bit [A1, A0] and A12 status at T13.
/CK
Command*3
T1
WRITE (BC4) to READ (BC4/BL8) OTF
T2
T3
L
T0
CK
WRIT
NOP
T4
T5
T6
T7
T8
T9
T10
T13
T14
tWR
tWTR
Bank
Col b
tWPRE
DQS, /DQS
T12
tBL = 4 clocks
Pr
Bank
Col n
T11
NOP
WRIT
tCCD
Address*4
VIH or VIL
WL = 5
od
Din
n
DQ*2
tWPST
Din
n+1
Din
n+2
Din
n+3
Din
n+4
Din
n+5
Din
n+6
Din
n+7
Din
b
Din
b+1
Din
b+2
Din
b+3
WL = 5
Notes: 1. WL = 5 (CWL = 5, AL = 0)
2. Din n (or b) = data-in from column n (or column b).
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BL8 setting activated by MR0 bit [A1, A0] = [0, 1] and A12 = 1 during WRIT command at T0.
BC4 setting activated by MR0 bit [A1, A0] = [0, 1] and A12 = 0 during WRIT command at T4.
t
uc
WRITE (BL8) to WRITE (BC4) OTF
VIH or VIL
Data Sheet E1375E50 (Ver. 5.0)
117
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
T13
T14
CK
/CK
Command*3
WRIT
NOP
NOP
WRIT
tCCD
tWR
tBL = 4 clocks
tWTR
Address*4
Bank
Col n
Bank
Col b
tWPRE
tWPST
tWPRE
tWPST
DQS, /DQS
Din
n
EO
DQ*2
WL = 5
Din
n+1
Din
n+2
Din
n+3
Din
b
Din
b+1
Din
b+2
Din
b+3
Din
b+4
Din
b+5
Din
b+6
Din
b+7
WL = 5
Notes: 1. WL = 5 (CWL = 5, AL = 0)
2. Din n (or b) = data-in from column n (or column b).
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. BC4 setting activated by MR0 bit [A1, A0] = [0, 1] and A12 = 0 during WRIT command at T0.
BL8 setting activated by MR0 bit [A1, A0] = [0, 1] and A12 = 1 during WRIT command at T4.
VIH or VIL
WRITE (BC4) to WRITE (BL8) OTF
L
t
uc
od
Pr
Data Sheet E1375E50 (Ver. 5.0)
118
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Write Timing Violations
Motivation
Generally, if timing parameters are violated, a complete reset/initialization procedure has to be initiated to make sure
the DRAM works properly.
However it is desirable for certain minor violations, that the DRAM is guaranteed not to "hang up" and error to be
limited to that particular operation.
For the following it will be assumed that there are no timing violations w.r.t to the write command itself (including
ODT etc.) and that it does satisfy all timing requirements not mentioned below.
EO
Data Setup and Hold Violations
Should the data to strobe timing requirements (tDS, tDH) be violated, for any of the strobe edges associated with a
write burst, then wrong data might be written to the memory location addressed with this write command.
In the example (Figure Write Timing Parameters) the relevant strobe edges for write burst A are associated with the
clock edges: T5, T5.5, T6, T6.5, T7, T7.5, T8, T8.5.
Subsequent reads from that location might result in unpredictable read data, however the DRAM will work properly
otherwise.
L
Strobe to Strobe and Strobe to Clock Violations
Should the strobe timing requirements (tDQSH, tDQSL, tWPRE, tWPST) or the strobe to clock timing requirements
(tDSS, tDSH tDQSS) be violated for any of the strobe edges associated with a write burst, then wrong data might be
written to the memory location addressed with the offending write command. Subsequent reads from that location
might result in unpredictable read data, however the DRAM will work properly otherwise.
In the example (Figure Write Timing Parameters) the relevant strobe edges for write burst A are associated with the
clock edges: T4, T4.5, T5, T5.5, T6, T6.5, T7, T7.5, T8, T8.5 and T9. Any timing requirements starting and ending
on one of these strobe edges are T8, T8.5, T9, T9.5, T10, T10.5, T11, T11.5, T12, T12.5 and T13. Some edges are
associated with both bursts.
T0
CK
T3
Command*3
WRIT
Address*4
A
T5
T6
T7
T8
T9
Pr
/CK
T4
T11
T12
T13
T14
NOP
WRIT
NOP
T10
B
ODTL
od
/CS
BL/2 + 2 + ODTL
WL
tDQSS
tDSS
tDSH
tDQSL
tWPRE
tDQSH
tDH
tDS
DQ*2
uc
DQS, /DQS
tWPST
VIH or VIL
Data Sheet E1375E50 (Ver. 5.0)
119
t
Write Timing Parameters
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Write Data Mask
One write data mask (DM) pin for each 8 data bits (DQ) will be supported on DDR3 SDRAMs, Consistent with the
implementation on DDR-I SDRAMs. It has identical timings on write operations as the data bits, and though used in
a uni-directional manner, is internally loaded identically to data bits to ensure matched system timing. DM is not
used during read cycles.
T1
T2
T3
T4
in
in
T5
T6
DQS
/DQS
DQ
in
in
in
in
in
in
EO
DM
Write mask latency = 0
Data Mask Timing
/CK
CK
L
[tDQSS(min.)]
Command
tWR
WRIT
NOP
WL
tDQSS
DQ
DM
Pr
DQS, /DQS
in0
in2 in3
WL
[tDQSS(max.)]
DQ
DM
od
DQS, /DQS
tDQSS
in0
in2 in3
Data Mask Function, WL = 5, AL = 0 shown
t
uc
Data Sheet E1375E50 (Ver. 5.0)
120
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Precharge
The precharge command is used to precharge or close a bank that has been activated. The precharge command is
triggered when /CS, /RAS and /WE are low and /CAS is high at the rising edge of the clock. The precharge
command can be used to precharge each bank independently or all banks simultaneously. Four address bits A10,
BA0, BA1 and BA2 are used to define which bank to precharge when the command is issued.
[Bank Selection for Precharge by Address Bits]
BA0
BA1
BA2
Precharged Bank(s)
L
L
L
L
Bank 0 only
L
H
L
L
Bank 1 only
L
L
H
L
Bank 2 only
L
H
H
L
Bank 3 only
L
L
L
H
Bank 4 only
L
H
L
H
Bank 5 only
L
L
H
H
Bank 6 only
L
H
H
H
Bank 7 only
H
×
×
×
All banks 0 to 7
EO
A10
Remark: H: VIH, L: VIL, ×: VIH or VIL
L
t
uc
od
Pr
Data Sheet E1375E50 (Ver. 5.0)
121
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Auto Precharge Operation
EO
Before a new row in an active bank can be opened, the active bank must be precharged using either the precharge
command or the auto precharge function. When a read or a write command is given to the DDR3 SDRAM, the /CAS
timing accepts one extra address, column address A10, to allow the active bank to automatically begin precharge at
the earliest possible moment during the burst read or write cycle. If A10 is low when the read or write Command is
issued, then normal read or write burst operation is executed and the bank remains active at the completion of the
burst sequence. If A10 is high when the Read or Write Command is issued, then the auto precharge function is
engaged. During auto precharge, a read Command will execute as normal with the exception that the active bank
will begin to precharge on the rising edge which is /CAS latency (CL) clock cycles before the end of the read burst.
Auto precharge can also be implemented during Write commands. The precharge operation engaged by the Auto
precharge command will not begin until the last data of the burst write sequence is properly stored in the memory
array.
This feature allows the precharge operation to be partially or completely hidden during burst read cycles (dependent
upon /CAS latency) thus improving system performance for random data access. The /RAS lockout circuit internally
delays the Precharge operation until the array restore operation has been completed so that the auto precharge
command may be issued with any read or write command.
L
Burst Read with Auto Precharge
If A10 is high when a Read Command is issued, the Read with Auto precharge function is engaged. The DDR3
SDRAM starts an auto precharge operation on the rising edge which is (AL + tRTP) cycles later from the read with
AP command when tRAS (min.) is satisfied. If tRAS (min.) is not satisfied at the edge, the start point of auto
precharge operation will be delayed until tRAS (min.) is satisfied. A new bank active (command) may be issued to
the same bank if the following two conditions are satisfied simultaneously.
(1) The /RAS precharge time (tRP) has been satisfied from the clock at which the auto precharge begins.
(2) The /RAS cycle time (tRC) from the previous bank activation has been satisfied.
t
uc
od
Pr
Burst Write with Auto precharge
If A10 is high when a write command is issued, the Write with auto precharge function is engaged. The DDR3
SDRAM automatically begins precharge operation after the completion of the burst writes plus write recovery time
(tWR). The bank-undergoing auto precharge from the completion of the write burst may be reactivated if the
following two conditions are satisfied.
(1) The data-in to bank activate delay time (tWR + tRP) has been satisfied.
(2) The /RAS cycle time (tRC) from the previous bank activation has been satisfied.
Data Sheet E1375E50 (Ver. 5.0)
122
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Auto-Refresh
EO
The refresh command (REF) is used during normal operation of the DDR3 SDRAMs. This command is non
persistent, so it must be issued each time a refresh is required. The DDR3 SDRAM requires refresh cycles at an
average periodic interval of tREFI. When /CS, /RAS and /CAS are held low and /WE high at the rising edge of the
clock, the chip enters a refresh cycle. All banks of the SDRAM must be precharged and idle for a minimum of the
precharge time tRP(min) before the refresh command can be applied. The refresh addressing is generated by the
internal refresh controller. This makes the address bits “Don’t Care” during a refresh command. An internal address
counter supplies the addresses during the refresh cycle. No control of the external address bus is required once this
cycle has started. When the refresh cycle has completed, all banks of the SDRAM will be in the precharged (idle)
state. A delay between the refresh command and the next valid command, except NOP or DESL, must be greater
than or equal to the minimum refresh cycle time tRFC(min) as shown in the following figure. Note that the tRFC
timing parameter depends on memory density.
In general, a refresh command needs to be issued to the DDR3 SDRAM regularly every tREFI interval. To allow for
improved efficiency in scheduling and switching between tasks, some flexibility in the absolute refresh interval is
provided. A maximum of 8 refresh commands can be postponed during operation of the DDR3 SDRAM, meaning
that at no point in time more than a total of 8 refresh commands are allowed to be postponed. In case that 8 refresh
commands are postponed in a row, the resulting maximum interval between the surrounding refresh commands is
limited to 9 × tREFI. A maximum of 8 additional refresh commands can be issued in advance (“pulled in”), with each
one reducing the number of regular refresh commands required later by one. Note that pulling in more than
8 refresh commands in advance does not further reduce the number of regular refresh commands required later, so
that the resulting maximum interval between two surrounding refresh commands is limited to 9 × tREFI. At any given
time, a maximum of 16 REF commands can be issued within tREFI. Before entering self-refresh mode, all
postponed refresh commands must be executed.
T1
T2
T3
L
T0
/CK
CK
VIH
≥ tRP
CKE
PRE
Pr
Command
≥ tRFC
≥ tRFC
REF
NOP
NOP
REF
Any
Command
Refresh Command Timing
tREFI
od
9 × tRER
t
tRFC
8 × REF-Commands postponed
Postponing Refresh Command
tREFI
9 × tRER
8 × REF-Commands postponed
Data Sheet E1375E50 (Ver. 5.0)
123
t
Pulling-in Refresh Command
uc
t
tRFC
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Self-Refresh
The self-refresh command can be used to retain data in the DDR3 SDRAM, even if the rest of the system is powered
down. When in the self-refresh mode, the DDR3 SDRAM retains data without external clocking. The DDR3 SDRAM
device has a built-in timer to accommodate self-refresh operation. The Self-Refresh Entry (SELF) command is
defined by having /CS, /RAS, /CAS and CKE held low with /WE high at the rising edge of the clock.
Before issuing the self-refresh entry command, the DDR3 SDRAM must be idle with all bank precharge state with
tRP satisfied. Also, on-die termination must be turned off before issuing Self-refresh entry command, by either
registering ODT pin low “ODTL + 0.5tCK” prior to the self-refresh entry command or using MRS to MR1 command.
Once the self-refresh entry command is registered, CKE must be held low to keep the device in self-refresh mode.
The DLL is automatically disabled upon entering Self-refresh and is automatically enabled (including a DLL-Reset)
upon exiting self-refresh.
EO
When the DDR3 SDRAM has entered self-refresh mode all of the external control signals, except CKE and /RESET,
are “don’t care”. For proper self-refresh operation, all power supply and reference pins (VDD, VDDQ, VSS, VSSQ,
VREFCA and VREFDQ) must be at valid levels. The DRAM initiates a minimum of one refresh command internally
within tCKESR period once it enters self-refresh mode.
The clock is internally disabled during self-refresh operation to save power. The minimum time that the DDR3
SDRAM must remain in self-refresh mode is tCKESR. The user may change the external clock frequency or halt the
external clock tCKSRE clock cycles after self-refresh entry is registered, however, the clock must be restarted and
stable tCKSRX clock cycles before the device can exit self-refresh operation. To protect DRAM internal delay on
CKE line to block the input signals, one NOP (or DESL) command is needed after self-refresh entry.
L
The procedure for exiting self-refresh requires a sequence of events. First, the clock must be stable tCKSRX prior to
CKE going back high. Once a Self-Refresh Exit command (SREX, combination of CKE going high and either NOP
or DESL on command bus) is registered, a delay of at least tXS must be satisfied before a valid command not
requiring a locked DLL can be issued to the device to allow for any internal refresh in progress. Before a command
which requires a locked DLL can be applied, a delay of at least tXSDLL and applicable ZQCAL function
requirements (TBD) must be satisfied.
Pr
CKE must remain high for the entire self-refresh exit period tXSDLL for proper operation except for self-refresh
reentry. Upon exit from self-refresh, the DDR3 SDRAM can be put back into Self-refresh mode after waiting at least
tXS period and issuing one refresh command (refresh period of tRFC). NOP or DESL commands must be registered
on each positive clock edge during the self-refresh exit interval tXS. ODT must be turned off during tXSDLL.
The use of Self-refresh mode introduces the possibility that an internally timed refresh event can be missed when
CKE is raised for exit from self-refresh mode. Upon exit from self-refresh, the DDR3 SDRAM requires a minimum of
one extra refresh command before it is put back into self-refresh mode.
Tb
Tc Tc+1Tc+2
CK, /CK
tCKSRE
tRP
*4
Command
PALL
SELF NOP
od
Ta
Td
Te
Tf Tf+1 Tf+2
tCKSRX
tXS
SREX
ODTLoff + 0.5 x tCK
ODT
Self-Refresh Entry and Exit Timing
124
*2
*2
Valid Valid
*3 *3
Valid Valid
t
Only NOP or DESL commands.
Valid commands not requiring a locked DLL.
Valid commands requiring a locked DLL.
One NOP or DESL commands.
*1
uc
CKE
Data Sheet E1375E50 (Ver. 5.0)
Th Th+1
tXSDLL
tCKESR
Notes: 1.
2.
3.
4.
Tg Tg+1
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Power-Down Mode
Power-down is synchronously entered when CKE is registered low (along with NOP or DESL command). CKE is not
allowed to go low while mode register set command, MPR operations, ZQCAL operations, DLL locking or read/write
operation are in progress. CKE is allowed to go low while any of other operations such as row activation, precharge
or auto precharge and refresh are in progress, but power-down IDD spec will not be applied until finishing those
operations.
The DLL should be in a locked state when power-down is entered for fastest power-down exit timing. If the DLL is
not locked during power-down entry, the DLL must be reset after exiting power-down mode for proper read operation
and synchronous ODT operation. DRAM design provides all AC and DC timing and voltage specification as well
proper DLL operation with any CKE intensive operations as long as DRAM controller complies with DRAM
specifications.
EO
During power-down, if all banks are closed after any in-progress commands are completed, the device will be in
precharge power-down mode; if any bank is open after in-progress commands are completed, the device will be in
active power-down mode.
Entering power-down deactivates the input and output buffers, excluding CK, /CK, ODT, CKE and /RESET. To
protect DRAM internal delay on CKE line to block the input signals, multiple NOP or DESL commands are needed
during the CKE switch off and cycle(s) after this timing period are defined as tCPDED. CKE_low will result in
deactivation of command and address receivers after tCPDED has expired.
[Power-Down Entry Definitions]
Status of DRAM
MR0 bit A12
L
Active
Don’t Care
(A bank or more Open)
DLL
Precharged
0
(All banks Precharged)
1
Off
Relevant Parameters
Fast
tXP to any valid command
Slow
tXP to any valid command. Since it is in
precharge state, commands here will be
ACT, AR, MRS, PRE or PALL .
tXPDLL to commands who need DLL to
operate, such as READ, READA or ODT
control line.
Pr
Precharged
(All Banks
Precharged)
On
PD Exit
On
Fast
tXP to any valid command
t
uc
od
Also the DLL is disabled upon entering precharge power-down for slow exit mode, but the DLL is kept enabled
during precharge power-down for fast exit mode or active power-down. In power-down mode, CKE low, RESET high
and a stable clock signal must be maintained at the inputs of the DDR3 SDRAM, and ODT should be in a valid state
but all other input signals are “Don’t Care” (If RESET goes low during power-down, the DRAM will be out of PD
mode and into reset state). CKE low must be maintained until tPD has been satisfied. Power-down duration is
limited by 9 times tREFI of the device.
The power-down state is synchronously exited when CKE is registered high (along with a NOP or DESL command).
CKE high must be maintained until tCKE has been satisfied. A valid, executable command can be applied with
power-down exit latency, tXP and/or tXPDLL after CKE goes high. Power-down exit latency is defined at AC
Characteristics table of this data sheet.
Data Sheet E1375E50 (Ver. 5.0)
125
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Timing Diagrams for Proposed CKE with Power-Down Entry, Power-Down Exit
T0
/CK
CK
Command
T1
T5
T6
T7
T8
T9
READ
BA
T10
T11
NOP
NOP
Tx
Tx+1
Valid
tCPDED
tRDPDEN
CKE
T12
tIS
VIH
RL = CL + AL = 5 (AL = 0)
tPD
out
0
out
1
DQ(BC4)
out
0
out out
1
2
EO
DQ(BL8)
out
2
out out
3
4
out out
5
6
out
7
out
3
Power-Down Entry after Read and Read with Auto Precharge
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T14
T15
T16
T17
T18
Tn
CK
/CK
Command
CKE
NOP
L
BA
NOP
WRITA
NOP
Valid
tCPDED
tIS
tWRAPDEN
Pr
WL=5
DQ(BL8)
DQ(BC4)
in
1
in
2
in
3
in
0
in
1
in
2
in
3
in
4
in
5
in
6
in
7
Start Internal
Precharge
od
Note: tWR is programmed through MRS.
in
0
tPD
tWR*
Power-Down Entry After Write with Auto Precharge
t
uc
Data Sheet E1375E50 (Ver. 5.0)
126
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
Tx
Tx+1 Tx+2 Tx+3
CK
/CK
Command
WRITE
BA
NOP
NOP
Valid
tCPDED
tIS
CKE
tWRPDEN
in
0
in
1
in
2
in
3
DQ(BC4)
in
0
in
1
in
2
in
3
EO
DQ(BL8)
T0
tPD
tWR
WL=5
in
4
in
5
in
6
in
7
Power-Down Entry after Write
T1
Tn Tn+1
Tx
Ty
CK
L
/CK
tIH
CKE
tPD
tIH
tIS
tIS
Pr
tCPDED
Command
Valid NOP NOP
tCKE (min.)
NOP NOP NOP NOP NOP Valid NOP NOP NOP NOP N
Enter power-down mode
tXP
Exit power-down
od
Note: Valid command at T0 is ACT, NOP, DESL or precharge with still one bank remaining open after completion of
precharge command.
Active Power-Down Entry and Exit Timing Diagram
T0
T1
Tn
CK
/CK
tPD
tIH
Tn+1
tIS
tCPDED
uc
tIS
NOP NOP
Ty
tIH
CKE
Command
Tx
tCKE (min.)
NOP NOP NOP NOP NOP Valid NOP NOP NOP1 NOP N
Precharge Power-Down (Fast Exit Mode) Entry and Exit
Data Sheet E1375E50 (Ver. 5.0)
127
t
tXP
Exit power-down
Enter power-down mode
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
T0
T1
Tn
Tx
Tn+1
Ty
CK
/CK
tIH
tIH
CKE
tIS
tIS
tPD
tCPDED
Command
NOP NOP
tCKE (min.)
NOP
NOP
NOP
NOP NOP
NOP NOP
Valid NOP Valid
NOP NO
tXP
EO
T0
tXPDLL
Exit power-down
Enter power-down mode
Precharge Power-Down (Slow Exit Mode) Entry and Exit
T1
T2
T3
NOP
NOP
T4
T5
T6
T7
T8
T9
T10
T11
CK
/CK
Command
REF
L
tCPDED
tREFPDEN
tIS
Pr
CKE
Refresh Command to Power-Down Entry
T0
T1
T2
T3
NOP
NOP
T4
/CK
Command
ACT
tCPDED
tPD
Tn+1
End
Tn+2
uc
tACTPDEN
Tn
od
CK
tIS
CKE
Active Command to Power-Down Entry
t
Data Sheet E1375E50 (Ver. 5.0)
128
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
T0
T1
T2
T3
NOP
NOP
T4
T5
T6
T7
T8
T9
T10
T11
Tn+6
Tn+7
End
CK
/CK
PRE/
PALL
Command
tCPDED
tPREPDEN
tIS
CKE
EO
T0
Precharge/Precharge All Command to Power-Down Entry
T1
T2
T3
Tn
Tn+1
Tn+2
MRS
NOP
NOP
NOP
NOP
NOP
Tn+3
Tn+4
Tn+5
CK
/CK
Command
tCPDED
L
tMRSPDEN
CKE
tIS
t
uc
od
Pr
MRS Command to Power-Down Entry
Data Sheet E1375E50 (Ver. 5.0)
129
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Timing Values tXXXPDEN Parameters
Status of DRAM
Last Command before CKE_low
Parameter
Parameter Value
Unit
Idle or Active
Activate
tACTPDEN
1
nCK
Idle or Active
Precharge
tPRPDEN
1
nCK
Active
READ/READA
tRDPDEN
RL + 4 + 1
nCK
Active
WRIT for BL8MRS, BL8OTF, BC4OTF
tWRPDEN
Active
WRIT for BC4MRS
tWRPDEN
Active
WRITA for BL8MRS, BL8OTF, BC4OTF tWRAPDEN
Active
WRITA for BC4MRS
Idle
Refresh
2
nCK
2
WL + 2 + WR* + 1
nCK
tREFPDEN
1
nCK
tMRSPDEN
tMOD
WL + 4 + WR* + 1
tWRAPDEN
EO
Idle
WL + 4 + (tWR/tCK (avg))
nCK
1
*
WL + 2 + (tWR/tCK
nCK
1
(avg))*
Mode Register Set
Notes: 1. tWR is defined in ns, for calculation of tWRPDEN, it is necessary to round up tWR / tCK to next integer.
2. WR in clock cycles as programmed in mode register.
Power-Down Entry and Exit Clarification
Case 1:
When CKE registered low for power-down entry, tPD must be satisfied before CKE can be registered high for powerdown exit.
L
Case 1a:
After power-down exit, tCKE must be satisfied before CKE can be registered low again.
T0
T1
Tn
Tn+1
Tx
Ty
CK
tIH
CKE
Pr
/CK
tIH
tIS
tIS
tPD
Command
NOP NOP NOP
tCKE
od
tCPDED
NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP N
Enter power-down
Exit power-down
Power-Down Entry/Exit Clarifications (1)
t
uc
Data Sheet E1375E50 (Ver. 5.0)
130
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Case 2:
For certain CKE intensive operations, for example, repeated "PD Exit - Refresh - PD Entry" sequence, the number of
clock cycles between PD Exit and PD Entry may be insufficient to keep the DLL updated. Therefore the following
conditions must be met in addition to tPD in order to maintain proper DRAM operation when Refresh commands is
issued in between PD Exit and PD Entry.
Power-down mode can be used in conjunction with Refresh command if the following conditions are met:
1. tXP must be satisfied before issuing the command
2. tXPDLL must be satisfied (referenced to registration of PD exit) before next power-down can be entered.
CK
T0
T1
Tn Tn+1
Tx
Ty
/CK
tIH
tIH
EO
CKE
Command
tIS
tIS
tCPDED
tXPDLL (min.)
tCKE (min.)
tPD
NOP NOP NOP
NOP
L
Enter power-down
REF NOP NOP NOP NOP NOP NOP NOP
NOP
tXP
Exit power-down
Power-Down Entry/Exit Clarifications (2)
T0
T1
Pr
Case 3:
If an early PD Entry is issued after Refresh command, once PD Exit is issued, NOP or DESL with CKE high must be
issued until tRFC from the refresh command is satisfied. This means CKE cannot be de-asserted twice within tRFC
window.
Tn
CK
/CK
Ty
tIH
CKE
tIS
tIS
tPD
tCPDED
Command
Tx
od
tIH
Tn+1
REF NOP NOP
tXPDLL
tCKE (min.)
NOP NOP NOP NOP NOP NOP NOP NOP NOP Valid N
Exit power-down
uc
tRFC (min.)
Enter power-down
Note: * Synchronous ODT Timing starts at the end of tXPDLL (min.)
Power-Down Entry/Exit Clarifications (3)
t
Data Sheet E1375E50 (Ver. 5.0)
131
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Input Clock Frequency Change during Precharge Power-Down
L
EO
Once the DDR3 SDRAM is initialized, the DDR3 SDRAM requires the clock to be “stable” during almost all states of
normal operation. This means once the clock frequency has been set and is to be in the “stable state”, the clock
period is not allowed to deviate except for what is allowed for by the clock jitter and SSC (Spread Spectrum
Clocking) specifications.
The input clock frequency can be changed from one stable clock rate to another stable clock rate under two
conditions: (1) self-refresh mode and (2) precharge power-down mode. Outside of these two modes, it is illegal to
change the clock frequency. For the first condition, once the DDR3 SDRAM has been successfully placed in to SelfRefresh mode and tCKSRE has been satisfied, the state of the clock becomes a don’t care. Once a don’t care,
changing the clock frequency is permissible, provided the new clock frequency is stable prior to tCKSRX. When
entering and exiting Self-Refresh mode for the sole purpose of changing the clock frequency, the self-refresh entry
and exit specifications must still be met as outlined in Self-Refresh section.
The second condition is when the DDR3 SDRAM is in Precharge Power-down mode (either fast exit mode or slow
exit mode.) ODT must be at a logic low ensuring RTT is in an off state prior to entering Precharge Power-down mode
and CKE must be at a logic low. A minimum of tCKSRE must occur after CKE goes low before the clock frequency
may change. The DDR3 SDRAM input clock frequency is allowed to change only within the minimum and maximum
operating frequency specified for the particular speed grade. During the input clock frequency change, ODT and
CKE must be held at stable low levels. Once the input clock frequency is changed, stable new clocks must be
provided to the DRAM tCKSRX before Precharge Power-down may be exited; after Precharge Power-down is exited
and tXP has expired, the DLL must be RESET via MRS. Depending on the new clock frequency additional MRS
commands may need to be issued to appropriately set the WR, CL, and CWL with CKE continuously registered high.
During DLL relock period, ODT must remain low. After the DLL lock time, the DRAM is ready to operate with new
clock frequency. This process is depicted in the figure Clock Frequency Change in Precharge Power-Down Mode.
Previous clock frequency
T0
T1
T2
Ta
New clock frequency
Tb
Tc
Tc+1
Td
Td+1
Te
Te+1
NOP
MRS
NOP
Valid
/CK
CK
tIS
tIH
tCKSRE
tCKSRX
Pr
CKE
tCPDED
Command
NOP
Address
NOP
NOP
ODT
DQS, /DQS
DQ
High-Z
High-Z
DM
Valid
tXP
tDLLK
Frequency
change
uc
Enter precharge
power-down mode
DLL
RESET
od
tAOFPD/tAOF
NOP
Exit precharge
power-down mode
Clock Frequency Change in Precharge Power-Down Mode
Data Sheet E1375E50 (Ver. 5.0)
132
t
Notes: 1. Applicable for both slow exit and fast exit precharge power-down.
2. tCKSRE and tCKSRX are self-refresh mode specifications but the values
they represent are applicable here.
3. tAOFPD and tAOF must be satisfied and outputs high-z prior to T1;
refer to ODT timing for exact requirements.
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
On-Die Termination (ODT)
ODT (On-Die Termination) is a feature of the DDR3 SDRAM that allows the DRAM to turn on/off termination
resistance for each DQ, DQS, /DQS and DM for ×4 and ×8 configuration (and TDQS, /TDQS for ×8 configuration,
when enabled via A11=1 in MR1) via the ODT control pin. For ×16 configuration ODT is applied to each DQU, DQL,
DQSU, /DQSU, DQSL, /DQSL, DMU and DML signal via the ODT control pin. The ODT feature is designed to
improve signal integrity of the memory channel by allowing the DRAM controller to independently turn on/off
termination resistance for any or all DRAM devices.
The ODT feature is turned off and not supported in Self-Refresh mode.
A simple functional representation of the DRAM ODT feature is shown in figure Functional Representation of ODT.
ODT
EO
To other
circuitry
like
RCV, ...
VDDQ/2
RTT
Switch
DQ, DQS, DM, TDQS
L
Functional Representation of ODT
The switch is enabled by the internal ODT control logic, which uses the external ODT pin and other control
information, see below. The value of RTT is determined by the settings of Mode Register bits (see MR1
programming figure in the section Programming the Mode Register). The ODT pin will be ignored if the Mode
Register MR1 is programmed to disable ODT and in self-refresh mode.
Pr
[Termination Truth Table]
od
ODT Mode Register and ODT Truth Table
The ODT Mode is enabled if either of MR1 bits A2 or A6 or A9 are non-zero. In this case the value of RTT is
determined by the settings of those bits.
Application: Controller sends WRIT command together with ODT asserted.
• One possible application: The rank that is being written to provide termination.
• DRAM turns ON termination if it sees ODT asserted (except ODT is disabled by MR)
• DRAM does not use any write or read command decode information
• The Termination Truth Table is shown in the Termination Truth Table
ODT pin
DRAM Termination State
0
OFF
1
ON, (OFF, if disabled by MR1 bits A2, A6 and A9 in general)
t
uc
Data Sheet E1375E50 (Ver. 5.0)
133
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Synchronous ODT Mode
Synchronous ODT mode is selected whenever the DLL is turned on and locked. Based on the power-down
definition, these modes are:
• Active mode
• Idle mode with CKE high
• Active power-down mode (regardless of MR0 bit A12)
• Precharge power-down mode if DLL is enabled during precharge power-down by MR0 bit A12.
In synchronous ODT mode, RTT will be turned on or off ODTLon clock cycles after ODT is sampled high by a rising
clock edge and turned off ODTLoff clock cycles after ODT is registered low by a rising clock edge. The ODT latency
is tied to the write latency (WL) by: ODTLon = WL – 2; ODTLoff = WL – 2.
EO
ODT Latency and Posted ODT
In Synchronous ODT mode, the Additive Latency (AL) programmed into the Mode Register (MR1) also applies to the
ODT signal. The DRAM internal ODT signal is delayed for a number of clock cycles defined by the Additive Latency
(AL) relative to the external ODT signal.
ODTLon = CWL + AL − 2; ODTLoff = CWL + AL − 2. For details, refer to DDR3 SDRAM latency definitions.
[ODT Latency Table]
Symbol
Value
Unit
ODT turn-on Latency
ODTLon
WL – 2 = CWL + AL – 2
nCK
ODT turn-off Latency
ODTLoff
WL – 2 = CWL + AL – 2
nCK
L
Parameter
t
uc
od
Pr
Synchronous ODT Timing Parameters
In synchronous ODT mode, the following timing parameters apply (see Synchronous ODT Timing Examples (1)):
ODTLLow, ODTLLoff, tAON,(min.), (max.), tAOF,(min.),(max.) Minimum RTT turn-on time (tAON min) is the point in
time when the device leaves high impedance and ODT resistance begins to turn on. Maximum RTT turn-on time
(tAON max) is the point in time when the ODT resistance is fully on. Both are measured from ODTLon.
Minimum RTT turn-off time (tAOF min ) is the point in time when the device starts to turn-off the ODT resistance.
Maximum RTT turn-off time (tAOF max) is the point in time when the on-die termination has reached high
impedance. Both are measured from ODTLoff.
When ODT is asserted, it must remain high until ODTH4 is satisfied. If a Write command is registered by the
SDRAM with ODT high, then ODT must remain high until ODTH4 (BL4) or ODTH8 (BL8) after the Write command
(see figure Synchronous ODT Timing Examples (2)). ODTH4 and ODTH8 are measured from ODT registered high
to ODT registered low or from the registration of a Write command until ODT is registered low.
Data Sheet E1375E50 (Ver. 5.0)
134
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10 T11 T12 T13 T14 T15
END
CK
/CK
CKE
ODTH4 (min.)
ODT
AL = 3
AL = 3
IntODT
ODTLon = CWL + AL – 2
ODTLoff = CWL + AL – 2
CWL – 2
EO
RTT
T0
T1
tAOF (max.)
tAOF (min.)
tAON (max.)
tAON (min.)
RTT
Synchronous ODT Timing Examples (1): AL=3, CWL = 5;
ODTLon = AL + CWL - 2 = 6; ODTLoff = AL + CWL - 2 = 6
T2
T3
T4
T5
T6
T7
T8
T9
T10 T11 T12 T13 T14 T15 T16 T17 T18
CK
/CK
CKE
L
Command
ODTH4
WRS4
ODTH4
ODTH4
ODT
Pr
ODTLoff = WL – 2
ODTLoff = WL – 2
ODTLon = WL – 2
ODTLon = WL – 2
tAON (max.)
tAON (min.)
tAOF (max.)
tAOF (min.)
od
DRAM_RTT
tAOF (max.)
tAOF (min.)
RTT
RTT
tAON (max.)
tAON (min.)
Synchronous ODT Timing Examples (2)*: BC4, WL = 7
t
uc
ODT must be held high for at least ODTH4 after assertion (T1); ODT must be kept high ODTH4 (BC4) or ODTH8
(BL8) after write command (T7). ODTH is measured from ODT first registered high to ODT first registered low, or
from registration of write command with ODT high to ODT registered low. Note that although ODTH4 is satisfied
from ODT registered high at T6 ODT must not go low before T11 as ODTH4 must also be satisfied from the
registration of the write command at T7.
Data Sheet E1375E50 (Ver. 5.0)
135
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
ODT during Reads
As the DDR3 SDRAM cannot terminate and drive at the same time, RTT must be disabled at least half a clock cycle
before the read preamble by driving the ODT pin low appropriately. RTT may nominally not be enabled until one
clock cycle after the end of the post-amble as shown in the example in the figure below.
Note that ODT may be disabled earlier before the Read and enabled later after the Read than shown in this example
in the figure below.
ODT must be disabled externally during Reads by driving ODT low.
(example: CL = 6; AL = CL - 1 = 5; RL = AL + CL = 11; CWL = 5; ODTLon = CWL + AL -2 = 8;
ODTLoff = CWL + AL - 2 = 8)
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10 T11 T12
T13 T14 T15 T16 End
CK
/CK
Command
A
EO
Address
READ
RL = AL + CL
ODT
DQS, /DQS
DQ
ODTLon = WL – 2 = CWL + AL – 2
tAOF (max.)
tAOF (min.)
L
DRAM_RTT
ODTLoff = WL – 2 = CWL + AL – 2
tAON (min.)
tAON (max.)
RTT
RTT
out out out out out out out out
0 1 2 3 4 5 6 7
t
uc
od
Pr
Example of ODT during Reads
Data Sheet E1375E50 (Ver. 5.0)
136
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
L
EO
Dynamic ODT
In certain application cases and to further enhance signal integrity on the data bus, it is desirable that the termination
strength of the DDR3 SDRAM can be changed without issuing an MRS command. This requirement is supported by
the “Dynamic ODT” feature as described as follows:
Functional Description:
The Dynamic ODT mode is enabled if bit A9 or A10 of MR2 is set to ’1’. The function and is described as follows:
• Two RTT values are available: RTT_Nom and RTT_WR.
 The value for RTT_Nom is pre-selected via bits A[9,6,2] in MR1
 The value for RTT_WR is pre-selected via bits A[10,9] in MR2
• During operation without write commands, the termination is controlled as follows:
 Nominal termination strength RTT_Nom is selected.
 Termination on/off timing is controlled via ODT pin and latencies ODTLon and ODTLoff.
• When a write command (WRIT, WRITA, WRS4, WRS8, WRAS4, WRAS8) is registered, and if Dynamic ODT is
enabled, the termination is controlled as follows:
 A latency ODTLcnw after the write command, termination strength RTT_WR is selected.
 A latency ODTLcwn8 (for BL8, fixed by MRS or selected OTF) or ODTLcwn4 (for BC4, fixed by MRS or selected
OTF) after the write command, termination strength RTT_Nom is selected.
 Termination on/off timing is controlled via ODT pin and ODTLon, ODTLoff.
Table Latencies and Timing Parameters Relevant for Dynamic ODT shows latencies and timing parameters, which
are relevant for the on-die termination control in Dynamic ODT mode:
When ODT is asserted, it must remain high until ODTH4 is satisfied. If a write command is registered by the SDRAM
with ODT high, then ODT must remain high until ODTH4 (BC4) or ODTH8 (BL8) after the write command (see the
figure Synchronous ODT Timing Examples (2)). ODTH4 and ODTH8 are measured from ODT registered high to
ODT registered low or from the registration of a write command until ODT is registered low.
[Latencies and Timing Parameters Relevant for Dynamic ODT]
Parameters
Symbols
ODTLon
ODT turn-off Latency
ODTLoff
ODT latency for changing
ODTLcnw
from RTT_Nom to RTT_WR
Registering
external ODT
signal high
Registering
external ODT
signal low
Registering
external write
command
Registering
external write
command
Registering
external write
command
registering ODT
high
registering Write
with ODT high
registering Write
with ODT high
ODTLcnw
ODTLcwn
Unit
Turning termination on
ODTLon = WL – 2.0
nCK
Turning termination off
ODTLoff = WL – 2.0
nCK
ODTLcwn4
ODTLcwn8
ODTH4
ODTH8
tADC
ODTLcnw = WL – 2.0 nCK
ODTLcwn4 =
4 + ODTLoff
nCK
ODTLcwn8 =
6 + ODTLoff
nCK
ODT registered low
ODTH4 (min.) = 4
nCK
ODT registered low
ODTH4 (min.) = 4
nCK
ODT registered low
ODTH8 (min.) = 6
nCK
RTT valid
0.3ns to 0.7ns
tCK
(avg)
t
uc
ODTH4
Change RTT strength
from RTT_Nom to
RTT_WR
Change RTT strength
from RTT_WR to
RTT_Nom
Change RTT strength
from RTT_WR to
RTT_Nom
od
RTT change skew
Definition for all
DDR3 speed bins
Defined to
Pr
ODT turn-on Latency
ODT latency for change
from RTT_WR to RTT_Nom
(BC4)
ODT latency for change
from RTT_WR to RTT_Nom
(BL8)
Minimum ODT high time
after ODT assertion
Minimum ODT high time
after Write (BC4)
Minimum ODT high time
after Write (BL8)
Defined from
Data Sheet E1375E50 (Ver. 5.0)
137
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Mode Register Settings for Dynamic ODT Mode:
The table Mode Register for RTT Selection shows the Mode Register bits to select RTT_Nom and RTT_WR values.
[Mode Register for RTT Selection]
MR1
MR2
A9
A6
A2
RTT_Nom
(RZQ)
0
0
0
off
off
0
0
1
RZQ/4
60
0
1
RZQ/4
60
0
1
0
RZQ/2
120
1
0
RZQ/2
120
0
1
1
RZQ/6
40
1
1
Reserved
Reserved
1
0
0
2
RTT_Nom
(Ω)
A10
A9
0
0
RTT_WR
(RZQ)
RTT_WR*
(Ω)
Dynamic ODT OFF: Write does not
affect RTT value
20




30




Reserved
Reserved




Reserved
Reserved




RZQ/12*
EO
1
0
1
RZQ/8*
1
1
0
1
1
1
2
1
Notes: 1. RZQ = 240Ω.
2. If RTT_Nom is used during WRITEs, only the values RZQ/2, RZQ/4 and RZQ/6 are allowed.
ODT Timing Diagrams
T1
T2
T3
T4
T5
L
T0
CK
/CK
T6
T7
T8
T9
T10 T11 T12 T13 T14 T15 T16 T17 T18 T19
ODTLcnw
Command
WRS4
Pr
ODTH4
ODTH4
ODT
ODTLon
tAON (min.)
RTT_Nom
RTT_WR
tAON (max.)
tADC (min.)
od
RTT
tADC (min.)
ODTLoff
tADC (max.)
tAOF (min.)
RTT_Nom
tADC (max.)
tAOF (max.)
ODTLcwn4
DQS, /DQS
in in in in
0 1 2 3
DQ
uc
WL
Dynamic ODT: Behavior with ODT Being Asserted Before and after the Write*
Note: Example for BC4 (via MRS or OTF), AL = 0, CWL = 5. ODTH4 applies to first registering ODT high and to the
registration of the write command. In this example ODTH4 would be satisfied if ODT is low at T8 (4 clocks
after the write command).
t
Data Sheet E1375E50 (Ver. 5.0)
138
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
CK
/CK
Command
ODTH4
ODT
ODTLon
ODTLoff
tAON (min.)
tAOF (min.)
RTT_Nom
RTT
tAON (max.)
tAOF (max.)
EO
DQS, /DQS
DQ
Dynamic ODT*: Behavior without Write Command; AL = 0, CWL = 5
Note: ODTH4 is defined from ODT registered high to ODT registered low, so in this example ODTH4 is satisfied;
ODT registered low at T5 would also be legal.
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
L
CK
/CK
ODTLcnw
Command
WRS8
ODTH8
Pr
ODT
ODTLon
ODTLoff
tAON (min.)
RTT
tAOF (min.)
RTT_WR
od
tADC (max.)
tAOF (max.)
ODTLcwn8
DQS, /DQS
in
0
DQ
WL
in
1
in
2
in
3
in
4
in
5
in
6
in
7
uc
Dynamic ODT*: Behavior with ODT Pin Being Asserted Together with Write Command
for Duration of 6 Clock Cycles
Note: Example for BL8 (via MRS or OTF), AL = 0, CWL = 5. In this example ODTH8 = 6 is exactly satisfied.
t
Data Sheet E1375E50 (Ver. 5.0)
139
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
T0
CK
/CK
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
ODTLcnw
Command
WRS4
ODTH4
ODT
ODTLon
ODTLoff
tAON (min.)
tAOF (min.)
tADC (min.)
RTT
RTT_WR
RTT_Nom
EO
tADC (max.)
tADC (max.)
tAOF (max.)
ODTLcwn4
DQS, /DQS
in
0
DQ
in
1
in
2
in
3
WL
L
Dynamic ODT*: Behavior with ODT Pin Being Asserted Together with Write Command
for a Duration of 6 Clock Cycles, Example for BC4 (via MRS or OTF), AL = 0, CWL = 5.
Note: ODTH4 is defined from ODT registered high to ODT registered low, so in this example ODTH4 is satisfied;
ODT registered low at T5 would also be legal.
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
Pr
CK
/CK
ODTLcnw
Command
WRS4
ODTH4
ODT
od
ODTLon
ODTLoff
tAON (min.)
RTT
tAOF (min.)
RTT_WR
tADC (max.)
in
0
DQ
WL
uc
ODTLcwn4
DQS, /DQS
tAOF (max.)
in
1
in
2
in
3
Dynamic ODT*: Behavior with ODT Pin Being Asserted Together with Write Command
for Duration of 4 Clock Cycles
t
Note: Example for BC4 (via MRS or OTF), AL = 0, CWL = 5. In this example ODTH4 = 4 is exactly satisfied.
Data Sheet E1375E50 (Ver. 5.0)
140
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
EO
Asynchronous ODT Mode
Asynchronous ODT mode is selected when DRAM runs in DLL-on mode, but DLL is temporarily disabled (i.e. frozen)
in precharge power-down (by MR0 bit A12).
Precharge power-down mode if DLL is disabled during precharge power-down by MR0 bit A12.
In asynchronous ODT timing mode, internal ODT command is not delayed by Additive Latency (AL) relative to the
external ODT command.
In asynchronous ODT mode, the following timing parameters apply (see figure Asynchronous ODT Timings):
tAONPD (min.), (max.), tAOFPD (min.),(max.)
Minimum RTT turn-on time (tAONPD (min.)) is the point in time when the device termination circuit leaves high
impedance state and ODT resistance begins to turn on. Maximum RTT turn-on time (tAONPD (max.)) is the point in
time when the ODT resistance is fully on. tAONPD (min.) and tAONPD (max.) are measured from ODT being
sampled high.
Minimum RTT turn-off time (tAOFPD (min.)) is the point in time when the devices termination circuit starts to turn off
the ODT resistance. Maximum ODT turn-off time (tAOFPD (max.)) is the point in time when the on-die termination
has reached high impedance. tAOFPD (min.) and tAOFPD (max.) are measured from ODT being sampled low.
CK
/CK
CKE
tIH
tIH
tIS
tIS
ODT
L
DRAM_RTT
tAOFPD (min.)
tAONPD (max.)
RTT
tAONPD (min.)
tAOFPD (max.)
Asynchronous ODT Timings on DDR3 SDRAM with Fast ODT Transition: AL is Ignored
Pr
In precharge power-down, ODT receiver remains active, however no read or write command can be issued, as the
respective address/command receivers may be disabled.
[Asynchronous ODT Timing Parameters for All Speed Bins]
Parameters
tAONPD
tAOFPD
min.
max.
Unit
Asynchronous RTT turn-on delay (power-down with DLL frozen) 2
8.5
ns
Asynchronous RTT turn-off delay (power-down with DLL frozen) 2
8.5
ns
od
Symbol
[ODT for Power-Down (with DLL Frozen) Entry and Exit Transition Period]
min.
ODT to RTT turn-on delay
min {ODTLon × tCK + tAON(min.);
tAONPD(min.) }
min { (WL − 2.0) × tCK +
tAON(min.);
tAONPD(min.) }
min { ODTLoff × tCK +tAOF(min.);
tAOFPD(min.) }
min { (WL − 2.0) × tCK
+tAOF(min.);
tAOFPD(min.) }
ODT to RTT turn-off delay
tANPD
max.
WL − 1.0
max {ODTLon × tCK + tAON(max.);
tAONPD(max.) }
max {(WL − 2.0) × tCK + tAON(max.);
tAONPD(max.) }
uc
Description
max { ODTLoff × tCK + tAOF(max.);
tAOFPD(max.) }
max {(WL − 2.0) × tCK + tAOF(max.);
tAOFPD(max.) }
t
Data Sheet E1375E50 (Ver. 5.0)
141
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Synchronous to Asynchronous ODT Mode Transition during Power-Down Entry
If DLL is selected to be frozen in precharge power-down mode by the setting of bit A12 in MR0 to 0 there is a
transition period around power-down entry, where the DDR3 SDRAM may show either synchronous or
asynchronous ODT behavior.
This transition period ends when CKE is first registered low and starts tANPD before that. If there is a Refresh
command in progress while CKE goes low, then the transition period ends tRFC after the refresh command. tANPD
is equal to (WL − 1.0) and is counted (backwards) from the clock cycle where CKE is first registered low.
ODT assertion during the transition period may result in an RTT change as early as the smaller of tAONPD(min.)
and (ODTLon × tCK + tAON(min.)) and as late as the larger of tAONPD(max.) and (ODTLon × tCK + tAON(max.)).
ODT de-assertion during the transition period may result in an RTT change as early as the smaller of tAOFPD(min.)
and (ODTLoff × tCK + tAOF(min.)) and as late as the larger of tAOFPD(max.) and (ODTLoff × tCK + tAOF(max.)).
Note that, if AL has a large value, the range where RTT is uncertain becomes quite large.
The figure below shows the three different cases: ODT_A, synchronous behavior before tANPD; ODT_B has a state
change during the transition period; ODT_C shows a state change after the transition period.
EO
CK
/CK
Command
REF
NOP NOP
CKE
PD entry transition period
tANPD
ODT
tRFC
L
ODT_A_sync
DRAM_RTT_A_sync
ODTLoff
tAOF (max.)
tAOF (min.)
RTT
ODT_B_tran
Pr
ODTLoff + tAOFPD (max.)
tAOFPD (max.)
ODTLoff + tAOFPD (min.)
tAOFPD (min.)
DRAM_RTT_B_tran
ODT_C_async
od
DRAM_RTT_C_async
tAOFPD (max.)
tAOFPD (min.)
RTT
Synchronous to Asynchronous Transition During Precharge Power-Down (with DLL Frozen) Entry
(AL = 0; CWL = 5; tANPD = WL − 1 = 4)
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Data Sheet E1375E50 (Ver. 5.0)
142
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Asynchronous to Synchronous ODT Mode Transition during Power-Down Exit
If DLL is selected to be frozen in precharge power-down mode by the setting of bit A12 in MR0 to 0, there is also a
transition period around power-down exit, where either synchronous or asynchronous response to a change in ODT
must be expected from the DDR3 SDRAM.
This transition period starts tANPD before CKE is first registered high, and ends tXPDLL after CKE is first registered
high. tANPD is equal to (WL − 1.0) and is counted backward from the clock cycle where CKE is first registered high.
ODT assertion during the transition period may result in an RTT change as early as the smaller of tAONPD(min.)
and (ODTLon × tCK + tAON(min.)) and as late as the larger of tAONPD(max.) and (ODTLon × tCK + tAON(max.)).
ODT de-assertion during the transition period may result in an RTT change as early as the smaller of tAOFPD(min.)
and (ODTLoff × tCK + tAOF(min.)) and as late as the larger of tAOFPD(max.) and (ODTLoff × tCK + tAOF(max.)).
See ODT for Power-Down (with DLL Frozen) Entry and Exit Transition Period table.
Note that, if AL has a large value, the range where RTT is uncertain becomes quite large. The figure below shows
the three different cases: ODT_C, asynchronous response before tANPD; ODT_B has a state change of ODT during
the transition period; ODT_A shows a state change of ODT after the transition period with synchronous response.
EO
T1
T3
T5
T7
T9
T11 T13 T15 T17 T19 T21 T23 T25 T27 T29 T31 T33 T35
CK
/CK
Command
NOP NOP
CKE
ODT_C_async
PD exit transition period
tANPD
tXPDLL
L
tAOFPD (max.)
tAOFPD (min.)
DRAM_RTT_C_async
RTT
ODT_B_tran
Pr
tAOFPD (min.)
ODTLoff + tAOF (min.)
ODTLoff + tAOF (max.)
tAOFPD (max.)
DRAM_RTT_B_tran
od
ODT_A_sync
ODTLoff
DRAM_RTT_A_sync
tAOF (max.)
tAOF (min.)
RTT
t
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Asynchronous to Synchronous Transition during Precharge Power-Down (with DLL Frozen) Exit
(CL = 6; AL = CL - 1; CWL = 5; tANPD= WL − 1 = 9)
Data Sheet E1375E50 (Ver. 5.0)
143
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Asynchronous to Synchronous ODT Mode during Short CKE high and Short CKE Low Periods
If the total time in precharge power-down state or idle state is very short, the transition periods for power-down entry
and power-down exit may overlap. In this case the response of the DDR3 SDRAM RTT to a change in ODT state at
the input may be synchronous OR asynchronous from the start of the power-down entry transition period to the end
of the PD exit transition period (even if the entry period ends later than the exit period).
If the total time in idle state is very short, the transition periods for power-down exit and power-down entry may
overlap. In this case the response of the DDR3 SDRAM RTT to a change in ODT state at the input may be
synchronous OR asynchronous from the start of the power-down exit transition period to the end of the power-down
entry transition period.
Note that in the bottom part of figure below it is assumed that there was no refresh command in progress when idle
state was entered.
REF
CKE
NOP
NOP
NOP NOP
tANPD
tRFC
PD entry transition period
PD exit transition period
tANPD
tXPDLL
short CKE low transition period
L
EO
CK
/CK
Command
CKE
tANPD
tANPD
tXPDLL
tXPDLL
short CKE high transition period
t
uc
od
Pr
Transition Period for Short CKE Cycles with Entry and Exit Period Overlapping
(AL = 0, WL = 5, tANPD = WL − 1 = 4)
Data Sheet E1375E50 (Ver. 5.0)
144
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
ZQ Calibration
EO
ZQ calibration command is used to calibrate DRAM RON and ODT values. DDR3 SDRAM needs longer time to
calibrate RON and ODT at initialization and relatively smaller time to perform periodic calibrations.
ZQCL command is used to perform the initial calibration during power-up initialization sequence. This command may
be issued at any time by the controller depending on the system environment. ZQCL command triggers the
calibration engine inside the DRAM and once calibration is achieved the calibrated values are transferred from
calibration engine to DRAM I/O which gets reflected as updated RON and ODT values.
The first ZQCL command issued after reset is allowed a timing period of tZQinit to perform the full calibration and the
transfer of values. All other ZQCL commands except the first ZQCL command issued after RESET is allowed a
timing period of tZQoper.
ZQCS command is used to perform periodic calibrations to account for voltage and temperature variations. A shorter
timing window is provided to perform the calibration and transfer of values as defined by timing parameter tZQCS.
One ZQCS command can effectively correct a minimum of 0.5% (ZQCorrection) of RON and RTT impedance error
within 64nCK for all speed bins assuming the maximum sensitivities specified in the ‘Output Driver Voltage and
Temperature Sensitivity’ and ‘ODT Voltage and Temperature Sensitivity’ tables. The appropriate interval between
ZQCS commands can be determined from these tables and other application-specific parameters. One method for
calculating the interval between ZQCS commands, given the temperature (Tdriftrate) and voltage (Vdriftrate) drift
rates that the SDRAM is subject to in the application, is illustrated. The interval could be defined by the following
formula:
× × L
where TSens = max(dRTTdT, dRONdTM) and VSens = max(dRTTdV, dRONdVM) define the SDRAM temperature
and voltage sensitivities.
For example, if TSens = 1.5%/°C, VSens = 0.15%/mV, Tdriftrate = 1°C/sec and Vdriftrate = 15mV/sec, then the
interval between ZQCS commands is calculated as:
× × CK
Command
A10
ZQCL
NOP/DESL
Valid
ZQCS
Valid
uc
X
X
CKE
tZQinit or tZQ oper
DQ Bus*2
NOP/DESL
A10 = L
A10 = H
Address
od
Pr
No other activities should be performed on the DRAM channel by the controller for the duration of tZQinit, tZQoper or
tZQCS. The quiet time on the DRAM channel allows in accurate calibration of RON and ODT. Once DRAM
calibration is achieved the DRAM should disable ZQ current consumption path to reduce power.
All banks must be precharged and tRP met before ZQCL or ZQCS commands are issued by the controller.
ZQ calibration commands can also be issued in parallel to DLL lock time when coming out of self-refresh. Upon selfrefresh exit, DDR3 SDRAM will not perform an I/O calibration without an explicit ZQ calibration command. The
earliest possible time for ZQ Calibration command (short or long) after self-refresh exit is tXS.
In dual rank systems that share the ZQ resistor between devices, the controller must not allow any overlap of
tZQoper or tZQinit or tZQCS between ranks.
tZQCS
Activities
Hi-Z
ZQ Calibration
Data Sheet E1375E50 (Ver. 5.0)
145
Activities
t
Notes: 1. ODT must be disabled via ODT signal or MRS during calibration procedure.
2. All device connected to DQ bus should be High impedance during calibration.
Hi-Z
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
ZQ External Resistor Value and Tolerance
DDR3 SDRAM has a 240Ω, ±1% tolerance external resistor connecting from the DDR3 SDRAM ZQ pin to ground.
The resister can be used as single DRAM per resistor.
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Data Sheet E1375E50 (Ver. 5.0)
146
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Package Drawing
78-ball FBGA
Solder ball: Lead free (Sn-Ag-Cu)
Unit: mm
8.0 ± 0.1
0.2 S B
INDEX MARK
11.5 ± 0.1
EO
L
0.2 S A
0.2 S
1.17 max.
S
Pr
0.32 ± 0.05
0.1 S
78-φ0.45 ± 0.05
B
φ0.12 M S A B
0.8
od
9.6
A
uc
INDEX MARK
1.6
6.4
0.8
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ECA-TS2-0276-01
Data Sheet E1375E50 (Ver. 5.0)
147
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
96-ball FBGA
Solder ball: Lead free (Sn-Ag-Cu)
Unit: mm
8.0 ± 0.1
0.2 S B
0.2 S A
L
EO
13.5 ± 0.1
INDEX MARK
0.2 S
1.17 max.
S
Pr
0.1 S
0.32 ± 0.05
96-φ0.45 ± 0.05
φ0.12 M S A B
od
0.4
A
uc
INDEX MARK
12.0
0.8
B
1.6 0.8
6.4
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ECA-TS2-0277-01
Data Sheet E1375E50 (Ver. 5.0)
148
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
Recommended Soldering Conditions
Please consult with our sales offices for soldering conditions of the EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE.
Type of Surface Mount Device
EDJ1104BBSE, EDJ1108BBSE: 78-ball FBGA < Lead free (Sn-Ag-Cu) >
EDJ1116BBSE: 96-ball FBGA < Lead free (Sn-Ag-Cu) >
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Data Sheet E1375E50 (Ver. 5.0)
149
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
NOTES FOR CMOS DEVICES
1
PRECAUTION AGAINST ESD FOR MOS DEVICES
Exposing the MOS devices to a strong electric field can cause destruction of the gate
oxide and ultimately degrade the MOS devices operation. Steps must be taken to stop
generation of static electricity as much as possible, and quickly dissipate it, when once
it has occurred. Environmental control must be adequate. When it is dry, humidifier
should be used. It is recommended to avoid using insulators that easily build static
electricity. MOS devices must be stored and transported in an anti-static container,
static shielding bag or conductive material. All test and measurement tools including
work bench and floor should be grounded. The operator should be grounded using
wrist strap. MOS devices must not be touched with bare hands. Similar precautions
need to be taken for PW boards with semiconductor MOS devices on it.
EO
2
HANDLING OF UNUSED INPUT PINS FOR CMOS DEVICES
No connection for CMOS devices input pins can be a cause of malfunction. If no
connection is provided to the input pins, it is possible that an internal input level may be
generated due to noise, etc., hence causing malfunction. CMOS devices behave
differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed
high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected
to VDD or GND with a resistor, if it is considered to have a possibility of being an output
pin. The unused pins must be handled in accordance with the related specifications.
L
3
STATUS BEFORE INITIALIZATION OF MOS DEVICES
Pr
Power-on does not necessarily define initial status of MOS devices. Production process
of MOS does not define the initial operation status of the device. Immediately after the
power source is turned ON, the MOS devices with reset function have not yet been
initialized. Hence, power-on does not guarantee output pin levels, I/O settings or
contents of registers. MOS devices are not initialized until the reset signal is received.
Reset operation must be executed immediately after power-on for MOS devices having
reset function.
CME0107
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Data Sheet E1375E50 (Ver. 5.0)
150
EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE
The information in this document is subject to change without notice. Before using this document, confirm that this is the latest version.
No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of Elpida Memory, Inc.
Elpida Memory, Inc. does not assume any liability for infringement of any intellectual property rights
(including but not limited to patents, copyrights, and circuit layout licenses) of Elpida Memory, Inc. or
third parties by or arising from the use of the products or information listed in this document. No license,
express, implied or otherwise, is granted under any patents, copyrights or other intellectual property
rights of Elpida Memory, Inc. or others.
Descriptions of circuits, software and other related information in this document are provided for
illustrative purposes in semiconductor product operation and application examples. The incorporation of
these circuits, software and information in the design of the customer's equipment shall be done under
the full responsibility of the customer. Elpida Memory, Inc. assumes no responsibility for any losses
incurred by customers or third parties arising from the use of these circuits, software and information.
EO
[Product applications]
Be aware that this product is for use in typical electronic equipment for general-purpose applications.
Elpida Memory, Inc. makes every attempt to ensure that its products are of high quality and reliability.
However, users are instructed to contact Elpida Memory's sales office before using the product in
aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment,
medical equipment for life support, or other such application in which especially high quality and
reliability is demanded or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury.
L
[Product usage]
Design your application so that the product is used within the ranges and conditions guaranteed by
Elpida Memory, Inc., including the maximum ratings, operating supply voltage range, heat radiation
characteristics, installation conditions and other related characteristics. Elpida Memory, Inc. bears no
responsibility for failure or damage when the product is used beyond the guaranteed ranges and
conditions. Even within the guaranteed ranges and conditions, consider normally foreseeable failure
rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so
that the equipment incorporating Elpida Memory, Inc. products does not cause bodily injury, fire or other
consequential damage due to the operation of the Elpida Memory, Inc. product.
[Usage environment]
Pr
Usage in environments with special characteristics as listed below was not considered in the design.
Accordingly, our company assumes no responsibility for loss of a customer or a third party when used in
environments with the special characteristics listed below.
od
Example:
1) Usage in liquids, including water, oils, chemicals and organic solvents.
2) Usage in exposure to direct sunlight or the outdoors, or in dusty places.
3) Usage involving exposure to significant amounts of corrosive gas, including sea air, CL 2 , H 2 S, NH 3 ,
SO 2 , and NO x .
4) Usage in environments with static electricity, or strong electromagnetic waves or radiation.
5) Usage in places where dew forms.
6) Usage in environments with mechanical vibration, impact, or stress.
7) Usage near heating elements, igniters, or flammable items.
uc
If you export the products or technology described in this document that are controlled by the Foreign
Exchange and Foreign Trade Law of Japan, you must follow the necessary procedures in accordance
with the relevant laws and regulations of Japan. Also, if you export products/technology controlled by
U.S. export control regulations, or another country's export control laws or regulations, you must follow
the necessary procedures in accordance with such laws or regulations.
If these products/technology are sold, leased, or transferred to a third party, or a third party is granted
license to use these products, that third party must be made aware that they are responsible for
compliance with the relevant laws and regulations.
M01E0706
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Data Sheet E1375E50 (Ver. 5.0)
151