EPC EPC310

epc3xx
High sensitive photodiodes
General Description
Features
The epc3xx family products are high-sensitive photo diodes for  Low dark current
light-barrier, light-curtain, and the like applications. These photo  High quantum efficiency
diodes are designed to be used in a reverse-bias mode.
 High dynamic range
 Diodes can be used in parallel
This device allows the design of short to long range light barriers  CSP package with very small footprint
from a few millimeters up to tens of meters.
 Near infrared and visible version available
 Customer specific wavelength filter upon request
Using chips from the epc3xx product line, linear or two dimensional arrays can be formed for any application, be it triangulation,
spot location, angle measurement, rotary encoders, or similar. Applications
Also, spectral sensitive detectors can easily be designed by
applying color filters in front of the photo diodes.
 Light barriers ranging from millimeters to tens of meters
 Light curtains
Also, other mechanical dimensions are available upon request. It  Smoke detectors
is be possible to manufacture photo diodes of up to 15x15 mm or  Liquid detectors
even bigger. Such a 15x15 mm device then would contain 450  Heart beat monitors
individual photo diodes, each of them individually accessible. All  Position detection (rotary, linear, angle, etc.)
diodes feature a very high quantum efficiency of 90% in the near  IR remote control of Hi-Fi, TV sets and other equipment
IR range, a reverse breakdown voltage of up to 30 Volts and a  Leveling instruments
response time down to less than 100ns. All devices are available  Differential measurement
upon request with optical bandpass filters.
 Linear photo diode arrays
Product Range Overview
connection
connection
connection
connection
connection
R
connection
R
R
connection
R
connection
R
connection
R
connection
R
R
connection
connection
connection
R
connection
connection
R : refer to chapter “Electrical isolation between individual diodes”
Model
No. of
Photo
Diodes
Diode
Length
(mm)
Diode
Width
(mm)
Total Active
Area
(mm2)
Typ. Dark
Current
at 20°C (pA )
Ideal Bias
Voltage
(V)
Wavelength
(nm)
Footprint
Single diode
1
1.0
0.5
0.43
20
5
400 - 1050
---
epc300
2
1.0
1.0
0.86
40
5
400 - 1050
CSP4
epc310
4
2.0
1.0
1.71
80
5
400 - 1050
CSP8
epc320
8
2.0
2.0
3.42
160
5
400 - 1050
CSP16
epc330
16
4.0
2.0
6.84
320
5
400 - 1050
CSP32
Type specific characteristics (all diodes of the array connected in parallel)
© 2011 ESPROS Photonics Corporation
Characteristics subject to change without notice
1
Datasheet epc3xx - V2.3
www.espros.ch
epc3xx
Absolute Maximum Ratings (Notes 1, 2)
Recommended Operating Conditions
Reverse Voltage V R
30.0 V
Min.
Max.
Units
Breakdown Voltage between Diodes
10.0 V
Reverse Voltage (V R)
1.5
20.0
V
Storage Temperature Range (T S)
-40°C to +85°C
Operating Temperature (T A)
-40
+85
°C
Lead Temperature solder, 4 sec. (T L)
+260°C
Relative Humidity (non-condensing)
+5
+95
%
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Recommended operating conditions
indicate conditions for which the device is intended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see Electrical Characteristics.
Note 2: This device is a highly sensitive CMOS photodiodes with an ESD rating of JEDEC HBM class 2 (<2kV). Handling and assembly of
this device should only be done at ESD protected workstations.
Note 3: Unless otherwise stated, measuring parameters are V R = 5.0 V, -40°C < T A < +85°C, RL = 50 Ω
Note 4: Unless otherwise stated, measurement data apply for individual photo diodes in multi diode chips
General Characteristics (Notes 3, 4)
Symbol
Parameter
Conditions/Comments
Values
Min.
λS max.
Typ.
Units
Max.
Wavelength
max. Sensitivity
λ
Wavelength Range
S = 20 % of S max
850
Sλ
Spectral Sensitivity
λ = 850nm, V R = 5V, Ie = 1 mW/cm2, type epc300
η
Quantum Efficiency
λ = 850nm, V R = 5V, Ie = 1 mW/cm2, type epc300
φ
Half angle
VO
Open Circuit Voltage
TCV
Temperature Coefficient of I SC
0.38
%/K
TCO
Temperature Coefficient of V O
-3.0
mV/K
400
Ie = 0.5 mW/cm2
nm
1030
nm
0.6
A/W
90
%
±60
°
300
mV
Type Specific Characteristics @ +25°C (all diodes of the array connected in parallel )
Symbol
Parameter
Conditions/Comments
Values
Min.
IP
Photo Current
per diode
epc300
VR = 5V, Ie = 1 mW/cm2,
λ = 850 nm (NIR filter centered on 850nm)
Dark Current *
10
20
40
VR = 5 V, TA= 20°C
20
250
40
500
epc310
80
1000
epc320
160
2000
epc330
320
4000
epc300
ISC
Short-circuit Current
μA
5
epc320
per diode
Units
Max.
2.5
epc310
epc330
IR
Typ.
per diode
Ie = 1 mW/cm2
2.5
epc300
5
epc310
10
epc320
20
epc330
40
pA
μA
* selected types available upon request
© 2011 ESPROS Photonics Corporation
Characteristics subject to change without notice
2
Datasheet epc3xx - V2.3
www.espros.ch
epc3xx
Symbol
Parameter
Conditions/Comments
Values
Min.
tr
CO
NEP
CT
Rise/Fall Time
Capacitance
Noise Equivalent Power
Cross Talk Suppression
all types
per diode
Typ.
photo current measured at
RL = 50 Ω , λ = 850 nm, I P = 200 μA
ns
VR = +1.5 V
300
VR = +5.0 V
150
VR = +10.0 V
90
VR = +5V, ƒ = 100kHz, E = 0
5
epc300
10
epc310
20
epc320
40
epc330
80
per diode
VR = 5 V
pF
4.2x10-15
epc300
6.0x10
epc310
8.4x10-15
epc320
1.2x10-14
epc330
1.7x10-14
epc320
epc330
© 2011 ESPROS Photonics Corporation
Characteristics subject to change without notice
between individual photo diodes on the same chip,
if the voltage difference Vdiff is <100mV between
individual diodes (cathodes)
3
Units
Max.
50
W/√Hz
-15
dB
Datasheet epc3xx - V2.3
www.espros.ch
epc3xx
Connection Diagrams
epc300
Anode 2
Anode 1
4
The structure of the diodes
shown in the figure to the left is
the same for all individual
diodes on the chip also for the
models epc310, epc320, and
epc330. Always two photo
diodes are paired and have
shorted anodes as shown in the
figure.
R: refer to chapter “Electrical
isolation between individual
diodes”
3
Top View
1
2
Cathode 1
epc310
Cathode 2
Anode 1
Anode 2
8
7
Anode 3
Anode 4
6
5
3
4
R
Top View
1
2
Cathode 1
Cathode 2
Cathode 3
Cathode 4
epc320
Anode 5
Anode 6
16
Anode 7
15
Anode 8
14
13
Cathode 7
Cathode 8
R
Cathode 5
Cathode 6
9
10
11
12
R
R
Top View
8
R
7
Anode 1
6
Anode 2
1
Anode 3
2
Cathode 1
5
Cathode 2
Anode 4
3
4
Cathode 3
Cathode 4
epc330
Anode 9
Anode 10
32
Anode 11
31
Anode 12
30
Anode 13
29
28
R
Cathode 9
Cathode 10
17
Cathode 12
19
R
Anode 15
27
R
Cathode 11
18
Anode 14
Anode 16
26
25
R
Cathode 13
20
Cathode 14
21
R
Cathode 15
22
Cathode 16
23
R
24
R
Top View
R
R
R
16
15
14
13
12
11
10
9
Anode 1
Anode 2
Anode 3
Anode 4
Anode 5
Anode 6
Anode 7
Anode 8
1
2
3
4
5
6
7
8
Cathode 1
Cathode 2
Cathode 3
Cathode 4
Cathode 5
Cathode 6
Cathode 7
Cathode 8
© 2011 ESPROS Photonics Corporation
Characteristics subject to change without notice
4
Datasheet epc3xx - V2.3
www.espros.ch
epc3xx
Other Parameters
(typical values, T amb = 25°C, VDD = 5.0V, IPD=0mA)
epc3x0
1
1E+1
0.8
0.7
1E+0
0.6
IP (µA)
0.5
0.4
0.3
1E-1
1E-2
1E-3
0.2
40
60
Angle (°)
80
100
Ie (mW/cm2)
Photocurrent IP = ƒ(Ie), VR = 5 V, λ=850nm
Relative sensitivity vs. illumination angle
epc300/310/320/330
epc30x
500
10%-90% rise / fall time [ns]
1
0.9
1E+1
20
1E+0
0
1E-1
1E-4
0
1E-2
1E-4
0.1
1E-3
Relative Sensitivity
0.9
Relative Sensitivity
epc300
1E+2
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
450
400
___ fall time
..... rise time
350
300
250
200
150
100
50
0
400
500
600
700
800
900
1000
0
Wavelength (nm)
2
3
4
5
6
7
8
9
10
Reverse bias voltage [V]
Rise/ fall time versus reverse bias voltage
Relative spectral sensitivity
Photodiode 1
1
Photodiode 2
10.00
0.00
-10.00
Cross-talk [dB]
-20.00
-30.00
-40.00
-50.00
-60.00
-70.00
-100 0
100 200 300 400 500 600 700 800 900 10001100
Position [μm]
Cross-talk between a pair of photodiodes
© 2011 ESPROS Photonics Corporation
Characteristics subject to change without notice
5
Datasheet epc3xx - V2.3
www.espros.ch
epc3xx
Application Information
Light Barrier Application
The following circuit uses an epc3xx photo diode with an epc13x PD amplifier chip. This circuit offers a very high AC photo current sensitivity
and a tremendous DC backlight suppression.
5V
epc3xx
C1
C3
R1
VDD
PD
OUT
epc13x
VN
CN
C2
VSS
Figure 1: Typical schematic circuit using an epc13x PD
amplifier
Recommended Components Values
R1: 27k (bias resistor). Sensitivity can be reduced by the reduction of this resistor.
C1: Usually not needed. May be up to 100 pF (refer to the epc13x data sheet).
C2: 33nF (DC input current filter capacitor)
C3: 100nF or more (power supply filter capacitor)
Spectral Sensitivity
This photo diode contains an anti-reflection coating on the photosensitive surface. Standard versions have no optical filter in order to allow applications from the near UV to the near IR range. However, optical filters deposited on the photosensitive surface are available upon request.
The filter parameters can be adjusted in a wide range according to specific customer requirements.
Electrical Isolation between individual Diodes
The individual diodes are located on a monolithic silicon chip. Thus, the electrical isolation between the individual diodes is not as good as
with diodes on separate substrates. The substrate is conductive in x and y direction between all anodes, e.g. indicated in schematics by “R”.
In x direction between the anode pairs ca. 20k Ω is a typical value. They must not be used as resistor components.
Design rules
On chip are the anodes metallic connect together by pairs. The user has to take care, that all anode pins are connected to the same voltage
level (refer to above section).
All pins of the diode array should be connected electrical-wise.
The biasing of the cathodes can be individual.Their voltage levels should be equal best match.
© 2011 ESPROS Photonics Corporation
Characteristics subject to change without notice
6
Datasheet epc3xx - V2.3
www.espros.ch
Thi s document is confidential and pr otected by law and internati onal trades. It must not be shown to any thir d party nor be copied in any form without our written per mission
.
epc3xx
Layout Information
(all measures in mm,
)
Package
Mechanical Dimensions
Designed
<Name>
Approved
<Name>
<Data>
M 1:1
DIN A4
Scale
Page
CSP4
Part Name
26.02.2009
1
Part No.
<Partname>
0.14
File: Unbenannt
Bottom View
<x000 000>
max 0.10
Layout Recommendations
0.10
max. 0.1524
Top View
0.50
Solder balls
Sn97.5Ag2.5
0.40
1.00
0.05
1.00 +0.00/-0.10
0.50
1
2
photo diode photo diode
area
area
max 0.10
0.50
1.00 +0.00/-0.10
4
3
0.90
∅ 0.30
photosensitive area
0.26 ±0.04
0.50
CSP8
Bottom View
0.14
1.00
no solder mask inside this area
Top View
max. 0.1524
∅ 0.30
5
4
0.50
photo diode area
0.50
photo diode area
8
1
1.00 ±0.00/-0.10
0.50
1.00
0.26 ±0.04
photosensitive area
Solder balls
Sn97.5Ag2.5
0.05
0.50
© 2011 ESPROS Photonics Corporation
Characteristics subject to change without notice
2.00
0.50
photo diode area
0.50
7
2.00 ±0.00/-0.10
6
2
0.50
3
0.50
photo diode area
no solder mask inside this area
7
Datasheet epc3xx - V2.3
www.espros.ch
epc3xx
Layout Information (Cont.)
Package
Mechanical Dimensions
CSP16
0.14
Top View
14
15
16
10
9
5
6
7
8
0.50
4
3
2
photo diode
area
photo diode photo diode
area
area
photo diode
area
1
0.50
0.50
photo diode photo diode
area
area
0.10
11
0.50
12
photo diode photo diode
area
area
2.00 +0.00/-0.10
0.50
13
max. 0.10
Bottom View
0.50
max. 0.10
0.10
Solder balls
Sn97.5Ag2.5
0.05
2.00 +0.00/-0.10
0.26 ±0.40
photosensitive area
CSP32
0.14
26
27
28
29
30
31
32
24
23
22
21
20
19
18
17
9
10
11
12
13
14
15
16
8
7
6
5
4
3
2
1
0.50
0.50
2.00 +0.00/-0.10
0.50
25
0.50
0.50
0.50
0.50
0.50
0.50
0.50
0.05
4.00 +0.00/-0.10
Solder balls
Sn97.5Ag2.5
0.26 ±0.04
photosensitive area
photo diode
area
photo diode
area
photo diode
area
photo diode
area
photo diode
area
photo diode
area
photo diode
area
photo diode
area
photo diode
area
photo diode
area
photo diode
area
photo diode
area
photo diode
area
photo diode
area
photo diode
area
photo diode
area
© 2011 ESPROS Photonics Corporation
Characteristics subject to change without notice
8
Datasheet epc3xx - V2.3
www.espros.ch
epc3xx
Packaging Information
(all measures in mm)
CSP4 Tape
CSP8 Tape
Pin 1
12
8
8
Pin 1
4
4
CSP16 Tape
CSP32 Tape
Pin 1
12
8
12
Pin 1
4
4
Tape & Reel Information
The devices are mounted on embossed tape for automatic placement systems. The tape is wound on 178 mm (7 inch) or 330 mm (13 inch)
reels and individually packaged for shipment. General tape-and-reel specification data are available in a separate data sheet and indicate the
tape sizes for various package types. Further tape-and-reel specifications can be found in the Electronic Industries Association (EIA) standard
481-1, 481-2, 481-3.
epc does not guarantee non-empty cavities. Thus, pick-and-place machines should check the presence of a chip during picking.
It is highly recommended to use underfill after assembly of the chips to the PCB.
Ordering Information
Part Name
Package
RoHS compliance
Packaging Method
epc300-CSP4
CSP4
Yes
Reel
epc310-CSP8
CSP8
Yes
Reel
epc320-CSP16
CSP16
Yes
Reel
epc330-CSP32
CSP32
Yes
Reel
© 2011 ESPROS Photonics Corporation
Characteristics subject to change without notice
9
Datasheet epc3xx - V2.3
www.espros.ch
epc3xx
IMPORTANT NOTICE
ESPROS Photonics AG and its subsidiaries (epc) reserve the right to make corrections, modifications, enhancements, improvements, and
other changes to its products and services at any time and to discontinue any product or service without notice. Customers should obtain the
latest relevant information before placing orders and should verify that such information is current and complete. All products are sold subject
to epc’s terms and conditions of sale supplied at the time of order acknowledgment.
epc warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with epc’s standard
warranty. Testing and other quality control techniques are used to the extent epc deems necessary to support this warranty. Except where
mandated by government requirements, testing of all parameters of each product is not necessarily performed.
epc assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications
using epc components. To minimize the risks associated with customer products and applications, customers should provide adequate design
and operating safeguards.
epc does not warrant or represent that any license, either express or implied, is granted under any epc patent right, copyright, mask work
right, or other epc intellectual property right relating to any combination, machine, or process in which epc products or services are used.
Information published by epc regarding third-party products or services does not constitute a license from epc to use such products or
services or a warranty or endorsement thereof. Use of such information may require a license from a third party under the patents or other
intellectual property of the third party, or a license from epc under the patents or other intellectual property of epc.
Resale of epc products or services with statements different from or beyond the parameters stated by epc for that product or service voids all
express and any implied warranties for the associated epc product or service. epc is not responsible or liable for any such statements.
epc products are not authorized for use in safety-critical applications (such as life support) where a failure of the epc product would reasonably
be expected to cause severe personal injury or death, unless officers of the parties have executed an agreement specifically governing such
use. Buyers represent that they have all necessary expertise in the safety and regulatory ramifications of their applications, and acknowledge
and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of
epc products in such safety-critical applications, notwithstanding any applications-related information or support that may be provided by epc.
Further, Buyers must fully indemnify epc and its representatives against any damages arising out of the use of epc products in such safetycritical applications.
epc products are neither designed nor intended for use in military/aerospace applications or environments unless the epc products are
specifically designated by epc as military-grade or "enhanced plastic." Only products designated by epc as military-grade meet military
specifications. Buyers acknowledge and agree that any such use of epc products which epc has not designated as military-grade is solely at
the Buyer's risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use.
epc products are neither designed nor intended for use in automotive applications or environments unless the specific epc products are desig nated by epc as compliant with ISO/TS 16949 requirements. Buyers acknowledge and agree that, if they use any non-designated products in
automotive applications, epc will not be responsible for any failure to meet such requirements.
© 2011 ESPROS Photonics Corporation
Characteristics subject to change without notice
10
Datasheet epc3xx - V2.3
www.espros.ch