®
HEXFET
Dynamic dv/dt Rating
175 ْC Operating Temperature
Fast switching
Ease of Paralleling
Simple Drive Requirements
E 3710
Power MOSFET
VDSS = 100V
ID25 = 60A
RDS(ON)= 0.023
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50watts. The low
thermal resistance and low package cost of the TO-220 contribute to its
wide acceptance throughout the industry.
Pin1–Gate
Pin2–Drain
Pin3–Source
Absolute Maximum Ratings
Parameter
Max.
Units
Continuous Drain Current, VGS@10V
60
ID@TC=100ْC Continuous Drain Current, VGS@10V
40
IDM
Pulsed Drain Current
230
PD@TC=25ْC
Power Dissipation
200
W
Linear Derating Factor
1.3
W/ ْC
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy
20
mJ
dv/dt
Peak Diode Recovery dv/dt
5.8
V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
–55 to +175
ID@TC=25 ْC
Soldering Temperature, for 10 seconds
A
ْC
300(1.6mm from case)
10 Ibf in(1.1N m)
Mounting Torque,6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
Junction-to-case
RθCS
Case-to-Sink, Flat, Greased Surface
RθJA
Junction-to-Ambient
Min.
Typ.
Max.
Units
0.75
ْC/W
0.50
62
1
®
HEXFET
E 3710
Power MOSFET
Electrical Characteristics @TJ=25 ْC(unless otherwise specified)
Parameter
V(BR)DSS
V(BR)DSS/
TJ
Min.
Drain-to-Source Breakdown Voltage
Typ.
Max. Units
100
Breakdown Voltage Temp. Coefficient
V
0.13
Static Drain-to-Source On-resistance
VGS(th)
Gate Threshold Voltage
2.0
gfs
Forward Transconductance
25
IDSS
Drain-to-Source Leakage current
4.0
25
250
Gate-to-Source Forward leakage
100
Gate-to-Source Reverse leakage
-100
Qg
Total Gate Charge
130
Qgs
Gate-to-Source charge
26
Qgd
Gate-to-Drain ("Miller") charge
43
td(on)
tr
td(off)
tf
Turn-on Delay Time
12
Rise Time
58
Turn-Off Delay Time
45
Fall Time
47
LD
Internal Drain Inductance
4.5
LS
Internal Source Inductance
7.5
Ciss
Input Capacitance
3130
Coss
Output Capacitance
410
Crss
Reverse Transfer Capacitance
72
IGSS
VGS=0V,ID=250uA
V/ْC Reference to 25ْC,ID=1mA
0.023
RDS(on)
Test Conditions
VGS=10V,ID=28A
V
VDS=VGS, ID=250µA
S
VDS=25V,ID=28A
A
nA
VDS=100V,VGS=0V
VDS=80V,VGS=0V,TJ=150ْC
VGS=20V
VGS=-20V
ID=28A
nC VDS=80V
VGS=10V See Fig.6 and 13
VDD=50V
ID=28A
nS
RG=2.5Ω
VGS=10V See Figure 10
Between lead,
6mm(0.25in.)
nH from package
and center of
die contact
VGS=0V
pF VDS=25V
f=1.0MHZ See Figure 5
Source-Drain Ratings and Characteristics
Parameter
Min.
IS
Continuous Source Current
(Body Diode)
.
ISM
Pulsed Source Current
(Body Diode)
.
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton Forward Turn-on Time
Notes:
Max.
Units
Test Conditions
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
1.2
V
TJ=25ْC,IS=28A,VGS=0V
140
220
nS
670
1010
nC
TJ=25ْC,IF=28A
di/dt=100A/µs
57
230
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Repetitive rating; pulse width limited by
max. junction temperature(see figure 11)
VDD=25V ,starting TJ=25 ْC ,L=0.70mH
RG=25
Typ.
ISD
TJ
28A,di/dt 250A/ S,VDD
V(BR)DSS,
175 ْC
Pulse width
300
S; duty cycle
2%.
IAS=28A(see Figure 12)
2