E 75N075
HEXFET
z
z
z
z
z
Dynamic dv/dt Rating
175°C Operating Temperature
Fast switching
Ease of Paralleling
Simple Drive Requirements
®
Power MOSFET
VDSS = 75V
ID25 = 75A
RDS(ON) = 13.0 mΩ
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50watts. The low
thermal resistance and low package cost of the TO-220 contribute to its
wide acceptance throughout the industry.
Pin1–Gate
Pin2–Drain
Pin3–Source
Absolute Maximum Ratings
Parameter
Max.
Continuous Drain Current, VGS@10V
75
ID@TC=100°C Continuous Drain Current, VGS@10V
60
Pulsed Drain Current
300
ID@TC=25°C
IDM
②
Units
①
A
200
W
Linear Derating Factor
1.5
W/°C
VGS
Gate-to-Source Voltage
±20
V
EAR
Single Pulse Avalanche Energy
23
mJ
dv/dt
Peak Diode Recovery dv/dt
5.9
V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
PD@TC=25°C Power Dissipation
③
④
–55 to +175
ْ°C
300(1.6mm from case)
Soldering Temperature, for 10 seconds
10 Ibf . in(1.1N . m)
Mounting Torque,6-32 or M3 screw
Thermal Resistance
Parameter
Min.
Typ.
Max.
RθJC
Junction-to-case
—
—
0.65
RθCS
Case-to-Sink, Flat, Greased Surface
—
0.50
—
RθJA
Junction-to-Ambient
—
—
62
1
Units
ْ°C /W
E 75N075
HEXFET
®
Power MOSFET
Electrical Characteristics @TJ=25 °ْ C (unless otherwise specified)
Parameter
Min.
Typ.
Drain-to-Source Breakdown Voltage
75
—
—
Breakdown Voltage Temp. Coefficient
—
0.074
—
RDS(on)
Static Drain-to-Source On-resistance
—
—
13.0
VGS(th)
Gate Threshold Voltage
2.0
—
4.0
V
VDS=VGS, ID=250μA
gfs
Forward Transconductance
20
—
—
S
VDS=25V,ID=40A
IDSS
Drain-to-Source Leakage current
—
—
25
—
—
250
Gate-to-Source Forward leakage
—
—
100
Gate-to-Source Reverse leakage
—
—
-100
Qg
Total Gate Charge
—
—
160
Qgs
Gate-to-Source charge
—
—
29
Qgd
Gate-to-Drain ("Miller") charge
—
—
55
td(on)
tr
td(off)
tf
Turn-on Delay Time
—
13
—
Rise Time
—
64
—
Turn-Off Delay Time
—
49
—
Fall Time
—
48
—
LD
Internal Drain Inductance
—
4.5
—
LS
Internal Source Inductance
—
7.5
—
Ciss
Input Capacitance
—
3820
—
Coss
Output Capacitance
—
610
—
Crss
Reverse Transfer Capacitance
—
130
—
V(BR)DSS
△V(BR)DSS/
△T J
IGSS
Max. Units
V
Test Conditions
VGS=0V,ID=250uA
V/°C Reference to 25°C,ID=1mA
mΩ VGS=10V,ID=40A
μA
nA
⑤
⑤
VDS=75V,VGS=0V
VDS=60V,VGS=0V,TJ=150°C
VGS=20V
VGS=-20V
ID=40A
nC VDS=60V
VGS=10V See Fig.6 and 13⑤
nS
VDD=38V
ID=40A
RG=2.5Ω VGS=10V See Figure 10⑤
Between lead,
6mm(0.25in.)
nH from package
and center of
die contact
VGS=0V
pF VDS=25V
f=1.0MHZ See Figure 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
.
ISM
Pulsed Source Current
(Body Diode) ②
.
VSD
Min.
Typ.
Max.
—
—
75
Units
Test Conditions
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
—
—
300
Diode Forward Voltage
—
—
1.3
V
TJ=25°C,IS=40A,VGS=0V
trr
Reverse Recovery Time
—
100
150
nS
Qrr
Reverse Recovery Charge
—
410
610
nC
TJ=25°C,IF=40A
di/dt=100A/μs ⑤
ton Forward Turn-on Time
Notes:
⑤
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
①
Calculated continuous current based on maximum
allowable junction temperature. Package limitation
current is 75A.
② Repetitive rating; pulse width limited by max. junction
temperature. (See fig. 11)
③
2
④
Starting TJ = 25°C, L = 370mH, RG = 25Ω, IAS = 40A,
VGS=10V (See Figure 12)
ISD ≤ 40A, di/dt ≤ 300A/μs, VDD ≤ V(BR)DSS,TJ ≤ 175°C
⑤
Pulse width ≤ 400μs; duty cycle ≤ 2%.