ESTEK ET50N06

ET50N06
50 Amps,60Volts
N-CHANNEL MOSFET
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DESCRIPTION
The ET50N06 is a N-Channel enhancement MOSFET and is
designed to have better characteristics, such as superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for low
voltage applications such as automotive DC/DC converters, and
high efficiency switching for power management in portable and
battery operated products.
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FEATURES
●
RDS(ON)[email protected]=10V
●
Low gate charge(typical 31nC)
●
Low reverse transfer capacitance(CRSS=typical 80pF)
●
Fast switching capability
●
Avalanche energy specified
●
Improved dv/dt capability,high ruggedness
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SYMBOL
■ ABSOLUTE MAXIMUM RATINGS(Tc=25℃,unless
PARAMETER
otherwise specified)
SYMBOL
PATINGS
UNIT
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
±20
V
1
BEIJING ESTEK ELECTRONICS CO.,LTD
ET50N06
Tc=25℃
Drain Currenet Continuous
ID
Tc=100℃
Drain Current Pulsed(Note 1)
IDP
A
35
A
200
A
Repetitive(Note 1)
EAR
13
mJ
Single Pulse(Note 2)
EAS
480
mJ
dv/dt
7.0
v/ns
Avalanche Energy
Peak Diode Recovery dv/dt(Note 3)
Tc=25℃
Total Power Dissipation
120
W
0.8
w/℃
TJ
-55 to+150
℃
TSTG
-55~+150
℃
PD
Derate above 25℃
Operation Junction Temperature
Storage temperature
■
50
THERMAL DATA
PARAMETER
SYMBOL
TYP
MAX
UNIT
Thermal Resistance Junction-Ambient
θJA
-
62.5
℃/W
Thermal Resistance Junction-Case
θJC
-
1.24
℃/W
Thermal Resistance Case-Sink
θCS
0.5
-
℃/W
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ELECTRICAL CHARACTERISTICS(TJ=25℃,unless Otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V,ID=250μA
Zero Gate Voltage Drain Current
IDSS
MIN
TYP
MAX
UNIT
Off Characteristics
Gate-Body Leakage
Forward
Current
Reverse
IGSS
V
VDS=60V,VGS=0V
1
μA
VDS=48V,TC=150℃
10
μA
VGS=20V,VDS=0V
100
nA
VGS=-20V,VDS=0V
△BVDSS/△TJ
ID=250μA
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250μA
Static Drain-Source On-Resistance
RDS(ON)
VDS=10V,ID=25A
Breakdown Voltage Temperature
60
-100
0.06
nA
V/℃
On Characteristics
2.2
3.8
V
0.019
0.023
Ω
900
1220
pF
430
550
pF
80
100
pF
MAX
UNIT
Dynamic Characteristics
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
■
VDS=25V,VGS=0V,f=1MHZ
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
Switching Characteristics
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
tD(ON)
tR
tD(OFF)
tF
Total Gate Charge
QG
Gate-Source Charge
QGS
Gate-Drain Charge
QGD
40
60
ns
VDD=30V,ID=25A,RG=50Ω
100
200
ns
(Note4,5)
90
180
ns
80
160
ns
VDS=48V,VGS=10V,ID=50A(Note4,5)
30
40
nC
9.6
-
nC
10
-
nC
1.5
V
Drain-Source Diode Characteristics
Drain-Source Diode Forward Voltage
VSD
VGS=0V,ISD=50A
Continuous Drain-Source Current
ISD
50
A
Pulsed Drain-Source Current
ISM
200
A
Reverse Recovery Time
tRR
54
2
ns
BEIJING ESTEK ELECTRONICS CO.,LTD
ET50N06
Reverse Recovery Charge
QRR
81
nC
Note:1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.L=5.6mH,IAS=50A,VDD=25V,RG=0Ω,Starting TJ=25℃
3.ISD≤50A,di/dt≤300A/μs,VDD≤BVDSS, Starting TJ=25℃
4.Pulse Test: Pulse Width≤300μs,Duty Cycle≤2%
5. Essentially Independent of Operating Temperature
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TYPICAL CHARACTERISTICS
3
BEIJING ESTEK ELECTRONICS CO.,LTD
ET50N06
4
BEIJING ESTEK ELECTRONICS CO.,LTD