ET50N06 50 Amps，60Volts N-CHANNEL MOSFET ■ DESCRIPTION The ET50N06 is a N-Channel enhancement MOSFET and is designed to have better characteristics, such as superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive DC/DC converters, and high efficiency switching for power management in portable and battery operated products. ■ FEATURES ● RDS(ON)=0.023Ω@VGS=10V ● Low gate charge(typical 31nC) ● Low reverse transfer capacitance(CRSS=typical 80pF) ● Fast switching capability ● Avalanche energy specified ● Improved dv/dt capability,high ruggedness ■ SYMBOL ■ ABSOLUTE MAXIMUM RATINGS(Tc=25℃,unless PARAMETER otherwise specified) SYMBOL PATINGS UNIT Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V 1 BEIJING ESTEK ELECTRONICS CO.,LTD ET50N06 Tc=25℃ Drain Currenet Continuous ID Tc=100℃ Drain Current Pulsed(Note 1) IDP A 35 A 200 A Repetitive(Note 1) EAR 13 mJ Single Pulse(Note 2) EAS 480 mJ dv/dt 7.0 v/ns Avalanche Energy Peak Diode Recovery dv/dt(Note 3) Tc=25℃ Total Power Dissipation 120 W 0.8 w/℃ TJ -55 to+150 ℃ TSTG -55~+150 ℃ PD Derate above 25℃ Operation Junction Temperature Storage temperature ■ 50 THERMAL DATA PARAMETER SYMBOL TYP MAX UNIT Thermal Resistance Junction-Ambient θJA - 62.5 ℃/W Thermal Resistance Junction-Case θJC - 1.24 ℃/W Thermal Resistance Case-Sink θCS 0.5 - ℃/W ■ ELECTRICAL CHARACTERISTICS（TJ=25℃,unless Otherwise specified.） PARAMETER SYMBOL TEST CONDITIONS Drain-Source Breakdown Voltage BVDSS VGS=0V,ID=250μA Zero Gate Voltage Drain Current IDSS MIN TYP MAX UNIT Off Characteristics Gate-Body Leakage Forward Current Reverse IGSS V VDS=60V,VGS=0V 1 μA VDS=48V,TC=150℃ 10 μA VGS=20V,VDS=0V 100 nA VGS=-20V,VDS=0V △BVDSS/△TJ ID=250μA Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250μA Static Drain-Source On-Resistance RDS(ON) VDS=10V,ID=25A Breakdown Voltage Temperature 60 -100 0.06 nA V/℃ On Characteristics 2.2 3.8 V 0.019 0.023 Ω 900 1220 pF 430 550 pF 80 100 pF MAX UNIT Dynamic Characteristics Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS ■ VDS=25V,VGS=0V,f=1MHZ ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP Switching Characteristics Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time tD(ON) tR tD(OFF) tF Total Gate Charge QG Gate-Source Charge QGS Gate-Drain Charge QGD 40 60 ns VDD=30V,ID=25A,RG=50Ω 100 200 ns (Note4,5) 90 180 ns 80 160 ns VDS=48V,VGS=10V,ID=50A(Note4,5) 30 40 nC 9.6 - nC 10 - nC 1.5 V Drain-Source Diode Characteristics Drain-Source Diode Forward Voltage VSD VGS=0V,ISD=50A Continuous Drain-Source Current ISD 50 A Pulsed Drain-Source Current ISM 200 A Reverse Recovery Time tRR 54 2 ns BEIJING ESTEK ELECTRONICS CO.,LTD ET50N06 Reverse Recovery Charge QRR 81 nC Note:1.Repetitive Rating: Pulse width limited by maximum junction temperature 2.L=5.6mH,IAS=50A,VDD=25V,RG=0Ω,Starting TJ=25℃ 3.ISD≤50A,di/dt≤300A/μs,VDD≤BVDSS, Starting TJ=25℃ 4.Pulse Test: Pulse Width≤300μs,Duty Cycle≤2% 5. Essentially Independent of Operating Temperature ■ TYPICAL CHARACTERISTICS 3 BEIJING ESTEK ELECTRONICS CO.,LTD ET50N06 4 BEIJING ESTEK ELECTRONICS CO.,LTD