EVERLIGHT 4N37

6 PIN DIP PHOTOTRANSISTOR
PHOTOCOUPLER
4N2X Series
4N3X Series
H11AX Series
Features:
• 4N2X series: 4N25, 4N26, 4N27, 4N28
• 4N3X series: 4N35, 4N36, 4N37, 4N38
• H11AX series: H11A1, H11A2, H11A3, H11A4, H11A5
• High isolation voltage between input and output
(Viso=5000 V rms)
• Creepage distance >7.62 mm
• Operating temperature up to +110°C
• Compact dual-in-line package
• Pb free and RoHS compliant.
• UL approved (No. E214129)
• VDE approved (No. 132249)
• SEMKO approved
• NEMKO approval
• DEMKO approval
• FIMKO approval
• CSA approved
• CQC approved
Description
The 4N2X, 4N3X, H11AX series of devices each consist of
an infrared emitting diode optically coupled to a phototransistor.
They are packaged in a 6-pin DIP package and available in
wide-lead spacing and SMD option.
Schematic
Applications
• Power supply regulators
• Digital logic inputs
• Microprocessor inputs
1. Anode
2. Cathode
3. No Connection
4. Emitter
5. Collector
6. Base
Everlight Electronics Co., Ltd.
Document No:DPC-0000045 Rev. 2
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December 28, 2009
4N2X Series
4N3X Series
H11AX Series
6 PIN DIP PHOTOTRANSISTOR
PHOTOCOUPLER
Absolute Maximum Ratings (T a =25°C)
Parameter
Input
Symbol
Rating
Unit
Forward current
IF
60
mA
Peak forward current (t = 10µs)
I FM
1
A
Reverse voltage
VR
6
V
100
mW
3.8
mW/°C
Power dissipation (T A = 25°C)
PD
Derating factor (above 100°C)
Output
Collector-Emitter voltage
V CEO
80
V
Collector-Base voltage
V CBO
80
V
Emitter-Collector voltage
V ECO
7
V
Emitter-Base voltage
V EBO
7
V
150
mW
9.0
mW/°C
Power dissipation (T A = 25°C)
PC
Derating factor (above 100°C)
Total power dissipation
P tot
200
mW
Isolation voltage *1
V iso
5000
Vrms
Operating temperature
T opr
-55~+110
°C
Storage temperature
T stg
-55~+125
°C
Soldering temperature *2
T sol
260
°C
Notes
*1 AC for 1 minute, R.H.= 40 ~ 60% R.H. In this test, pins 1, 2 & 3 are shorted together, and pins 4, 5 & 6
are shorted together.
*2 For 10 seconds.
Everlight Electronics Co., Ltd.
Document No:DPC-0000045 Rev. 2
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December 28, 2009
4N2X Series
4N3X Series
H11AX Series
6 PIN DIP PHOTOTRANSISTOR
PHOTOCOUPLER
Electrical Characteristics (T a =25°C unless specified otherwise)
Input
Parameter
Symbol
Min.
Typ.*
Max.
Unit
Condition
Forward voltage
VF
-
1.2
1.5
V
I F = 10mA
Reverse current
IR
-
-
10
µA
V R = 6V
Input capacitance
C in
-
30
-
pF
V = 0, f = 1MHz
Parameter
Symbol
Min.
Typ.*
Max.
Unit
Collector-Base dark current
I CBO
-
-
20
nA
-
-
50
Output
4N2X
Collector-Emitter H11AX
dark current
4N3X
nA
I CEO
-
-
50
Condition
V CB = 10V
V CE = 10V, IF=0mA
V CE = 60V, IF=0mA
Collector-Emitter
breakdown voltage
BV CEO
80
-
-
V
I c =1mA
Collector-Base
breakdown voltage
BV CBO
80
-
-
V
I C =0.1mA
Emitter-Collector
breakdown voltage
BV ECO
7
-
-
V
I E =0.1mA
Emitter-Base
breakdown voltage
BV EBO
7
-
-
V
I E =0.1mA
C CE
-
8
-
pF
VCE=0V, f=1MHz
Collector-Emitter
capacitance
* Typical values at T a = 25°C
Everlight Electronics Co., Ltd.
Document No:DPC-0000045 Rev. 2
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December 28, 2009
4N2X Series
4N3X Series
H11AX Series
6 PIN DIP PHOTOTRANSISTOR
PHOTOCOUPLER
Transfer Characteristics (T a =25°C unless specified otherwise)
Parameter
Current
transfer
ratio
Symbol
Min.
Typ.*
Max.
4N35, 4N36,
4N37
100
-
-
H11A1
50
-
-
30
-
-
H11A5
4N25, 4N26,
4N38,
H11A2, H11A3
Collector-Emitter
saturation
voltage
CTR
%
20
-
-
4N27, 4N28,
H11A4
10
-
-
4N25, 4N26,
4N27, 4N28
-
-
0.5
4N35, 4N36,
4N37
-
-
0.3
H11A1,
H11A2,
H11A3,
H11A4,
H11A5
4N38
V CE(sat)
11
Condition
I F = 10mA, V CE = 10V
I F = 50mA, I c = 2mA
V
I F = 10mA, I c = 0.5mA
-
0.4
-
1.0
-
-
Ω
V IO = 500Vdc
pF
V IO = 0, f = 1MHz
Isolation resistance
R IO
10
Input-output capacitance
4N25, 4N26,
4N27, 4N28,
H11A1,
H11A2,
H11A3,
Turn-on time
H11A4,
H11A5
C IO
-
0.2
-
-
3
10
Turn-off time
Unit
Ton
I F = 20mA, I c = 4mA
µs
V CC = 10V, I F = 10mA,
R L = 100Ω
See Fig. 11
4N35, 4N36,
4N37, 4N38
-
10
12
V CC = 10V, I C = 2mA,
R L = 100Ω, See Fig. 11
4N25, 4N26,
4N27, 4N28,
H11A1,
H11A2,
H11A3,
H11A4
-
3
10
V CC = 10V, I F = 10mA,
R L = 100Ω
See Fig. 11
4N35, 4N36,
4N37, 4N38
Toff
µs
-
9
12
V CC = 10V, I C = 2mA,
R L = 100Ω, See Fig. 11
* Typical values at T a = 25°C
Everlight Electronics Co., Ltd.
Document No:DPC-0000045 Rev. 2
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December 28, 2009
6 PIN DIP PHOTOTRANSISTOR
PHOTOCOUPLER
4N2X Series
4N3X Series
H11AX Series
Typical Performance Curves
Everlight Electronics Co., Ltd.
Document No:DPC-0000045 Rev. 2
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December 28, 2009
4N2X Series
4N3X Series
H11AX Series
6 PIN DIP PHOTOTRANSISTOR
PHOTOCOUPLER
V CC
IF
IC
Input
Pulse
RL
Output
Input
RB
Output
Pulse
R IN
tr
ton
10%
90%
tf
toff
Figure 11. Switching Time Test Circuit & Waveforms
Everlight Electronics Co., Ltd.
Document No:DPC-0000045 Rev. 2
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December 28, 2009
6 PIN DIP PHOTOTRANSISTOR
PHOTOCOUPLER
4N2X Series
4N3X Series
H11AX Series
Order Information
Part Number
4NXXY(Z)-V
or
H11AXY(Z)-V
Note
XX
X
Y
Z
V
= Part no. for 4NXX series (25, 26, 27, 28, 35, 36, 37 or 38)
= Part no. for H11AX series (1, 2, 3, 4, or 5)
= Lead form option (S, S1, M or none)
= Tape and reel option (TA, TB or none).
= VDE safety (optional)
Option
Description
Packing quantity
None
Standard DIP-6
65 units per tube
M
Wide lead bend (0.4 inch spacing)
65 units per tube
S (TA)
Surface mount lead form + TA tape & reel option
1000 units per reel
S (TB)
Surface mount lead form + TB tape & reel option
1000 units per reel
S1 (TA)
Surface mount lead form (low profile) + TA tape & reel option
1000 units per reel
S1 (TB)
Surface mount lead form (low profile) + TB tape & reel option
1000 units per reel
Everlight Electronics Co., Ltd.
Document No:DPC-0000045 Rev. 2
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December 28, 2009
6 PIN DIP PHOTOTRANSISTOR
PHOTOCOUPLER
4N2X Series
4N3X Series
H11AX Series
Package Drawings
(Dimensions in mm)
Standard DIP Type
Option M Type
Everlight Electronics Co., Ltd.
Document No:DPC-0000045 Rev. 2
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December 28, 2009
6 PIN DIP PHOTOTRANSISTOR
PHOTOCOUPLER
4N2X Series
4N3X Series
H11AX Series
Option S Type
Option S1 Type
Everlight Electronics Co., Ltd.
Document No:DPC-0000045 Rev. 2
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December 28, 2009
6 PIN DIP PHOTOTRANSISTOR
PHOTOCOUPLER
4N2X Series
4N3X Series
H11AX Series
Recommended pad layout for surface mount leadform
Device Marking
EL
4N35
YW W V
Notes
EL
4N35
Y
WW
V
denotes Everlight
denotes Device Number
denotes 1 digit Year code
denotes 2 digit Week code
denotes VDE (optional)
Everlight Electronics Co., Ltd.
Document No:DPC-0000045 Rev. 2
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December 28, 2009
4N2X Series
4N3X Series
H11AX Series
6 PIN DIP PHOTOTRANSISTOR
PHOTOCOUPLER
Tape & Reel Packing Specifications
Option TA
Option TB
Direction of feed from reel
Direction of feed from reel
Tape dimensions
Dimension No.
A
B
Do
D1
E
F
Dimension (mm)
10.4±0.1
7.52±0.1
1.5±0.1
1.5+0.1/-0
1.75±0.1
7.5±0.1
Dimension No.
Po
P1
P2
t
W
K
Dimension (mm)
4.0±0.15
16.0±0.1
2.0±0.1
0.35±0.03
16.0±0.2
4.5±0.1
Everlight Electronics Co., Ltd.
Document No:DPC-0000045 Rev. 2
11
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December 28, 2009
4N2X Series
4N3X Series
H11AX Series
6 PIN DIP PHOTOTRANSISTOR
PHOTOCOUPLER
Solder Reflow Temperature Profile
260 °C (peak 10s Max)
>255 °C (30s Max)
217°C
1-3 °C/Sec Max
200°C
60 – 140 Sec
150°C
70 – 170 Sec
1-3 °C/Sec Max
TIME (S)
Everlight Electronics Co., Ltd.
Document No:DPC-0000045 Rev. 2
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December 28, 2009
6 PIN DIP PHOTOTRANSISTOR
PHOTOCOUPLER
4N2X Series
4N3X Series
H11AX Series
DISCLAIMER
1. Above specification may be changed without notice. EVERLIGHT will reserve authority on material change
for above specification.
2. When using this product, please observe the absolute maximum ratings and the instructions for use as
outlined in these specification sheets. EVERLIGHT assumes no responsibility for any damage resulting
from use of the product which does not comply with the absolute maximum ratings and the instructions
included in these specification sheets.
3. These specification sheets include materials protected under copyright of EVERLIGHT Corporation.
Reproduction in any form is prohibited without the specific consent of EVERLIGHT.
Everlight Electronics Co., Ltd.
Document No:DPC-0000045 Rev. 2
13
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December 28, 2009