EIC5964-10 5.90-6.40 GHz 10-Watt Internally Matched Power FET UPDATED 08/21/2007 2X 0.079 MIN 4X 0.102 Excelics FEATURES • • • • • • • 5.90–6.40GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +40.5 dBm Output Power at 1dB Compression 10.0 dB Power Gain at 1dB Compression 37% Power Added Efficiency -46 dBc IM3 at PO = 29.5 dBm SCL 100% Tested for DC, RF, and RTH 0.024 EIC5964-10 0.945 0.803 0.580 YYWW SN 0.315 0.055 0.685 0.168 0.617 0.010 0.004 0.158 Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C) PARAMETERS/TEST CONDITIONS1 SYMBOL Output Power at 1dB Compression f = 5.90-6.40GHz VDS = 10 V, IDSQ ≈ 3200mA Gain at 1dB Compression f = 5.90-6.40GHz VDS = 10 V, IDSQ ≈ 3200mA Gain Flatness f = 5.90-6.40GHz VDS = 10 V, IDSQ ≈ 3200mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ ≈ 3200mA f = 5.90-6.40GHz Drain Current at 1dB Compression f = 5.90-6.40GHz Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 29.5 dBm S.C.L2 VDS = 10 V, IDSQ ≈ 65% IDSS f = 6.40GHz VDS = 3 V, VGS = 0 V Saturated Drain Current P1dB G1dB ∆G PAE Id1dB IM3 IDSS 0.095 0.055 MIN TYP 39.5 40.5 dBm 9.0 10.0 dB Pinch-off Voltage Thermal Resistance UNITS ±0.6 dB 37 % 3200 -43 VDS = 3 V, IDS = 60 mA VP RTH MAX 3 3600 -46 mA dBc 5800 6400 -2.5 -4.0 2.5 3.0 mA V o C/W Note: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING FOR EFE SYMBOLS Vds PARAMETERS ABSOLUTE1 CONTINUOUS2 15V 10V Drain-Source Voltage Vgs Gate-Source Voltage -5V -4V Igf Forward Gate Current 136mA 40.8mA Igr Reverse Gate Current -27.2mA -6.8mA Pin Input Power 40dBm @ 3dB Compression Tch Channel Temperature 175C 175C Tstg Storage Temperature -65C to +175C -65C to +175C Pt Total Power Dissipation 50W 50W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 4 Revised October 2007 EIC5964-10 5.90-6.40 GHz 10-Watt Internally Matched Power FET UPDATED 08/21/2007 PERFORMANCE DATA Typical S-Parameters (T= 25°C, 50Ω system, de-embedded to edge of package) VDS = 10 V, IDSQ ≈ 3200mA S11 and S22 2. 0 10 0 3. 4 4. .0 -5. 0 0 S21 and S12 (dB) 1.0 0.8 6 0. 4 -3 .0 -4 5.0 2 -0. 0.2 -10.0 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0 0.2 10.0 0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 10.0 10.0 -10.0 -4 .0 -5. 0 5.0 4. 0 S[1,1]4 * . -0 EIC5964-10 0 3. -3 .0 -1.0 -10 DB(|S[1,2]|) * EIC5964-10 5.5 6 Frequency (GHz) Swp Min 5.5GHz 0.8 1.0 -0.8 DB(|S[2,1]|) * EIC5964-10 -30 .0 -2 .6 4 6 -0 0. 2. 0 FREQ 0. 0 -20 0.2 2 -0. S[2,2] * EIC5964-10 S21 and S12 20 . -0 .6 .0 -2 0. -0 -0.8 -1.0 Swp Max 6.8GHz --- S11 --- --- S21 --- --- S12 --- 6.5 6.8 --- S22 --- (GHz) MAG ANG MAG ANG MAG ANG MAG ANG 5.00 0.842 -10.380 2.138 85.680 0.066 23.190 0.279 -146.210 5.25 0.770 -36.270 2.452 52.620 0.075 -8.650 0.338 160.980 5.50 0.668 -66.150 2.749 17.860 0.090 -42.660 0.414 119.050 5.75 0.535 -102.210 3.044 -18.590 0.104 -77.630 0.459 82.070 6.00 0.378 -148.060 3.268 -57.830 0.118 -116.340 0.453 42.110 6.25 0.226 142.100 3.354 -99.660 0.126 -157.830 0.407 -5.740 6.50 0.243 34.670 3.165 -144.200 0.123 159.460 0.366 -66.250 6.75 0.423 -32.680 2.662 171.730 0.107 116.550 0.395 -128.840 7.00 0.573 -76.790 2.037 131.380 0.084 77.710 0.470 -176.150 7.25 0.675 -110.330 1.498 95.780 0.066 45.490 0.549 151.630 7.50 0.750 -137.290 1.090 64.300 0.050 12.690 0.624 128.540 Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 2 of 4 Revised October 2007 EIC5964-10 5.90-6.40 GHz 10-Watt Internally Matched Power FET UPDATED 08/21/2007 Power De-rating Curve and IM3 Definition Power Dissipation vs. Temperature THIRD-ORDER INTERCEPT POINT IP3 60 IP3 = Pout + IM3/2 Potentially Unsafe Operating Region 40 30 Safe Operating Region 20 f1 or f2 Pout [S.C.L.] (dBm) Total Power Dissipation (W) 50 Pout IM3 Pin IM3 (2f1-f2) f1 f2 (2f2-f1) f1 f2 (2f2 - f1) or (2f1 - f2) 10 0 0 25 50 75 100 125 Case Temperature (°C) 150 175 Pin [S.C.L.] (dBm) Typical Power Data (VDS = 10 V, IDSQ = 3200 mA) P-1dB & G-1dB vs Frequency 42 Typical IM3 Data (VDS = 10 V, IDSQ ≈ 65% IDSS) IM3 vs Output Power 15 41 14 40 13 f1 = 6.16 GHz, f2 = 6.15 GHz -15 -20 G-1dB (dB) 12 -30 IM3 (dBc) P-1dB (dBm) 39 G-1dB (dB) P-1dB (dBm) -25 -35 -40 -45 38 11 37 10 -55 36 9 -65 5.8 5.9 6.0 6.1 6.2 Frequency (GHz) 6.3 6.4 6.5 -50 -60 IM3 (dBc) 24 25 26 27 28 29 30 31 32 33 34 35 36 37 Pout [S.C.L.] (dBm) Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 3 of 4 Revised October 2007 EIC5964-10 5.90-6.40 GHz 10-Watt Internally Matched Power FET UPDATED 08/21/2007 ORDERING INFORMATION Part Number Packages Grade1 fTest (GHz) P1dB (min) IM3 (min)2 EIC5964-10 Hermetic Industrial 5.90-6.40GHz 39.5 -43 Notes: 1. Contact factory for military and hi-rel grades. 2. Exact test conditions are specified in “Electrical Characteristics” table. DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 4 of 4 Revised October 2007