TC241 780- × 488-PIXEL CCD IMAGE SENSOR SOCS006C – AUGUST 1986 – REVISED DECEMBER 1991 • • • • • • • • • • • High-Resolution, Solid-State Image Sensor for NTSC B/W TV Applications 11-mm Image-Area Diagonal, Compatible With 2/3” Vidicon Optics 754 (H) x 244 (V) Active Elements in Image-Sensing Area Low Dark Current Electron-Hole Recombination Antiblooming Dynamic Range . . . More Than 60 dB High Sensitivity High Photoresponse Uniformity High Blue Response Single-Phase Clocking Solid-State Reliability With No Image Burn-in, Residual Imaging, Image Distortion, Image Lag, or Microphonics DUAL-IN-LINE PACKAGE (TOP VIEW) SUB 1 22 SUB IAG 2 21 ABG SAG 3 20 IAG TDB 4 19 SAG ADB 5 18 SRG3 OUT3 6 17 SRG2 OUT2 7 16 SRG1 OUT1 8 15 TRG AMP GND 9 14 IDB GND 10 13 CDB SUB 11 12 SUB description The TC241 is a frame-transfer charge-coupled device (CCD) image sensor designed for use in single-chip B/W NTSC TV applications. The device is intended to replace a 2/3-inch vidicon tube in applications requiring small size, high reliability, and low cost. The image-sensing area of the TC241 is configured into 244 lines with 780 elements in each line. Twenty-four elements are provided in each line for dark reference. The blooming-protection feature of the sensor is based on recombining excess charge with charge of opposite polarity in the substrate. This antiblooming is activated by supplying clocking pulses to the antiblooming gate, which is an integral part of each image- sensing element. The sensor is designed to operate in an interlace mode, electronically displacing the image-sensing elements by one-half of a vertical line during the charge integration period in alternate fields, effectively increasing the vertical resolution and minimizing aliasing. The device can also be run as a 754 (H) by 244 (V) noninterlaced sensor with significant reduction in the dark signal. A gated floating-diffusion detection structure with an automatic reset and voltage reference incorporated on-chip converts charge to signal voltage. A low-noise, two-stage, source-follower amplifier buffers the output and provides high output-drive capability. The TC241 is built using TI-proprietary virtual-phase technology, which provides devices with high blue response, low dark current, high photoresponse uniformity, and single-phase clocking. The TC241 is characterized for operation from –10°C to 45°C. This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to SUB. Under no circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUTn to ADB during operation to prevent damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is allowed to flow. Specific guidelines for handling devices of this type are contained in the publication Guidelines for Handling Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments. Copyright 1991, Texas Instruments Incorporated PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 1 TC241 780- × 488-PIXEL CCD IMAGE SENSOR SOCS006C – AUGUST 1986 – REVISED DECEMBER 1991 functional block diagram Top Drain 21 IAG TDB SAG ADB OUT3 2 Image Area With Blooming Protection 4 20 OUT1 3 5 Amplifiers Storage Area 6 Multiplexer, Transfer Gates and Serial Registers 7 18 17 16 8 15 Clearing Drain 6 Dummy Elements 2 IAG Dark-Reference Elements 19 OUT2 ABG 9 AMP GND 10 GND POST OFFICE BOX 655303 13 CDB • DALLAS, TEXAS 75265 14 IDB SAG SRG3 SRG2 SRG1 TRG TC241 780- × 488-PIXEL CCD IMAGE SENSOR SOCS006C – AUGUST 1986 – REVISED DECEMBER 1991 sensor topology diagram 780 3 753 24 1 1 Image-Sensing Area 244 488 Image-Storage Area One 1/2-Amplitude Element 7 251 8 251 8 251 One 1/2-Amplitude Element 6 Dummy Columns Terminal Functions TERMINAL I/O DESCRIPTION NAME NO. ABG 21 I Antiblooming gate ADB 5 I Supply voltage for amplifier-drain bias AMP GND 9 Amplifier ground CDB 13 GND IAG† 10 I Supply voltage for clearing-drain bias 2 I Image-area gate IAG† 20 I Image-area gate Ground IDB 14 I Supply voltage for input diode bias OUT1 8 O Output signal 1 OUT2 7 O Output signal 2 OUT3 SAG† 6 O Output signal 3 3 I Storage-area gate SAG† 19 I Storage-area gate SRG1 16 I Serial-register gate 1 SRG2 17 I Serial-register gate 2 SRG3 SUB† 18 I Serial-register gate 3 1 Substrate and clock return SUB† SUB† 11 Substrate and clock return 12 Substrate and clock return SUB† 22 TDB 4 I TRG 15 I Substrate and clock return Supply voltage for top-drain bias Transfer gate † All pins of the same name should be connected together externally. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 3 TC241 780- × 488-PIXEL CCD IMAGE SENSOR SOCS006C – AUGUST 1986 – REVISED DECEMBER 1991 detailed description The TC241 consists of four basic functional blocks: (1) the image-sensing area, (2) the image-storage area, (3) the multiplexer with serial registers and transfer gates, and (4) the buffer amplifier with charge-detection nodes. The location of each of these blocks is shown in the functional block diagram. image-sensing storage areas Cross sections with potential-well diagrams and top views of image-sensing and storage-area elements are shown in Figure 1 and Figure 2. As light enters the silicon in the image-sensing area, free electrons are generated and collected in the potential wells of the sensing elements. During this time, the antiblooming gate is activated by the application of a burst of pulses every horizontal-blanking interval. This prevents blooming caused by the spilling of charge from overexposed elements into neighboring elements. After the completion of integration, the signal charge is transferred into the storage area. To generate the dark reference necessary in subsequent video-processing circuits for restoration of the video-black level, 23 full columns and one half-column of elements at the left edge of the image-sensing area are shielded from incident light. Two full columns and one half-column of elements at the right of the image-sensing area are also shielded from incident light. The total number of elements per row is 780 (753 active elements plus 25 shielded elements and 2 transitional elements). multiplexer with transfer gates and serial registers The multiplexer and transfer-gates transfer charge line by line from the image-element columns into the corresponding serial register and prepare it for readout. Multiplexing is activated during the horizontal-blanking interval by applying appropriate pulses to the transfer gates and serial registers. The required pulse timing is shown in Figure 3. A drain is included in this area to provide the capability to quickly clear the image-sensing and storage areas of unwanted charge. Such charge can accumulate in the imager during the start-up of operation or under special circumstances when nonstandard TV operation is desired. buffer amplifier with charge-detection nodes The buffer amplifier converts charge into a video signal. Figure 4 shows the circuit diagram of a charge-detection node and one of the three amplifiers. As charge is transferred into the detection node, the potential of this node changes in proportion to the amount of signal received. This change is sensed by an MOS transistor and, after proper buffering, the signal is supplied to the output terminal of the image sensor. After the potential change has been sensed, the node is reset to a reference voltage supplied by an on-chip reference generator. The reset is accomplished by a reset gate that is connected internally to the serial register. The detection nodes and corresponding amplifiers are located some distance from the edge of the storage area; six dummy elements are used to span this distance. The location of the dummy elements is shown in the functional block diagram. 11.5 µm Light Clocked Barrier IAG 27 µm Virtual Barrier Antiblooming Gate Antiblooming Clocking Levels Virtual Well Clocked Well Accumulated Charge Figure 1. Charge-Accumulation Process 4 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 ABG TC241 780- × 488-PIXEL CCD IMAGE SENSOR SOCS006C – AUGUST 1986 – REVISED DECEMBER 1991 SAG Clocked Phase Virtual Phase Channel Stops Figure 2. Charge-Transfer Process POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 5 TC241 780- × 488-PIXEL CCD IMAGE SENSOR SOCS006C – AUGUST 1986 – REVISED DECEMBER 1991 Composite Blanking ABG IAG SAG TRG SRG 1 SRG2 SRG3 Expanded Horizontal Blanking Interval Figure 3. Timing Diagram 6 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TC241 780- × 488-PIXEL CCD IMAGE SENSOR SOCS006C – AUGUST 1986 – REVISED DECEMBER 1991 Reference Generator ADB CCD Register Clocked Virtual Gate Gate Detection Node Reset Gate and Output Diode Two-Stage SourceFollower Amplifier OUTn SRGn Figure 4. Buffer Amplifier and Charge-Detection Node POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 7 TC241 780- × 488-PIXEL CCD IMAGE SENSOR SOCS006C – AUGUST 1986 – REVISED DECEMBER 1991 spurious-nonuniformity specification The spurious-nonuniformity specification of the TC241 CCD grades – 10, – 20, – 30, and – 40 is based on several sensor characteristics: • • • • • • Amplitude of the nonuniform pixel Polarity of the nonuniform pixel – Black – White Location of the nonuniformity (see Figure 5) – Area A – Element columns near horizontal center of the area – Element rows near vertical center of the area – Area B – Up to the pixel or line border – Up to area A – Other – Edge of the imager – Up to area B Nonuniform pixel count Distance between nonuniform pixels Column amplitude The CCD sensors are characterized in both an illuminated condition and a dark condition. In the dark condition, the nonuniformity is specified in terms of absolute amplitude as shown in Figure 6. In the illuminated condition, the nonuniformity is specified as a percentage of the total illumination as shown in Figure 7. 15 Pixels 360 Pixels 233 Lines A 7 Lines B 11 Lines 20 Pixels Figure 5. Sensor-Area Map 8 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TC241 780- × 488-PIXEL CCD IMAGE SENSOR SOCS006C – AUGUST 1986 – REVISED DECEMBER 1991 mV Amplitude % of Total Illumination t t Figure 6. Pixel-Nonuniformity, Dark Condition Figure 7. Pixel-Nonuniformity, Illuminated Condition The grade specification for the TC241 is as follows (CCD video-output signal is 50 mV ±10 mV): Pixel-nonuniformity: DARK CONDITION PART NUMBER TC241-20 TC241-30 TC241 40 TC241-40 PIXEL AMPLITUDE, x AMPLITUDE ( ) (mV) ILLUMINATED CONDITION NONUNIFORM PIXEL TYPE WHITE BLACK W/B† AREA AREA AREA A B A B A B DISTANCE SEPARATION % OF TOTAL ILLUMINATION AREA A AREA B TOTAL COUNT‡ x > 3.5 0 0 0 0 0 0 x>5 0 0 2.5 < x ≤ 3.5 2 5 2 5 2 5 5.0 < x ≤ 7.5 2 5 x > 3.5 0 0 0 0 0 0 x > 7.5 0 0 3.5 < x ≤ 7 3 7 3 7 3 7 7.5 < x ≤ 15 3 7 x>7 0 0 0 0 0 0 x > 15 0 0 X Y AREA — — — — 12 100 80 A 15 — — — † White and black nonuniform pixel pair ‡ The total spot count is the sum of all nonuniform white, black, and white/black pairs in the dark condition added to the number of nonuniform black pixels in the illuminated condition. The sum of all nonuniform combinations do not exceed the total count. Column nonuniformity: PART NUMBER COLUMN AMPLITUDE, x AMPLITUDE (mV) WHITE BLACK AREAS A AND B AREAS A AND B TC241-20 x > 0.3 0 0 TC241-30 x > 0.5 0 0 TC241-40 x > 0.7 0 0 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 9 TC241 780- × 488-PIXEL CCD IMAGE SENSOR SOCS006C – AUGUST 1986 – REVISED DECEMBER 1991 absolute maximum ratings over operating free-air temperature range (unless otherwise noted)† Supply voltage range, VCC: ADB, CDB, IDB, TDB (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 V to 15 V Input voltage range, VI: ABG, IAG, SAG, SRG, TRG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –15 V to 15 V Operating free-air temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 10°C to 45°C Storage temperature range, TSTG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 30°C to 85°C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTE 1: All voltage values are with respect to the substrate terminal. recommended operating conditions Supply voltage, VCC ADB, CDB, IDB, TDB MIN NOM MAX 11 12 13 Substrate bias voltage 0 High level SRG1 SRG2 SRG1, SRG2, SRG3 Input voltage, voltage VI‡ 1.5 Intermediate level§ IAG TRG Clock frequency, fclock Load capacitance V 2.5 Low level – 10 –9 –8 High level 1.5 2 2.5 Low level –10 –9 –8 High level 2 4 6 – 2.5 Low level SAG V –7 High level 1.5 2 Low level – 10 –9 –8 High level 1.5 2 2.5 2.5 Low level – 10 –9 –8 IAG, SAG 2.05 SRG1, SRG2, SRG3, TRG 4.77 ABG 2.05 OUT1, OUT2, OUT3 V –5 Intermediate level§ ABG 2 UNIT 8 MHz pF Operating free-air temperature, TA – 10 45 °C ‡ The algebraic convention, in which the least-positive (most negative) value is designated minimum, is used in this data sheet for clock voltage levels. § Adjustment is required for optimal performance. 10 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TC241 780- × 488-PIXEL CCD IMAGE SENSOR SOCS006C – AUGUST 1986 – REVISED DECEMBER 1991 electrical characteristics over recommended operating ranges of supply voltage and operating free-air temperature (unless otherwise noted) PARAMETER Dynamic range (see Note 2) MIN Antiblooming disabled (see Note 3) TYP† Charge-conversion factor Charge-transfer efficiency (see Note 4) Signal-response delay time, τ (see Note 5 and Figure 11) Gamma (see Note 6) Output resistance 1.4 1.6 0.9999 0.99995 18 20 0.97 0.98 1/f noise (5 kHz) 0.13 Random noise (f = 100 kHz) 0.11 Noise-equivalent signal 120 Rejection ratio at 4.77 MHz UNIT dB 700 Noise voltage MAX 60 ADB (see Note 7) 20 SRG1, SRG2, SRG3 (see Note 8) 40 ABG (see Note 9) 20 Supply current 1.8 µV/e 22 ns 800 Ω µV/√Hz electrons 5 IAG mA 12000 SRG1, SRG2, SRG3 Input capacitance, Ci dB 120 ABG 4000 TRG 350 pF SAG 14000 † All typical values are at TA = 25 °C NOTES: 2. Dynamic range is – 20 times the logarithm of the mean-noise signal divided by the saturation-output signal. 3. For this test, the antiblooming gate must be biased at the intermediate level. 4. Charge-transfer efficiency is one minus the charge loss per transfer in the output register. The test is performed in the dark using an electrical input signal. 5. Signal-response delay time is the time between the falling edge of the SRG clock pulse and the output-signal valid state. 6. Gamma (γ) is the value of the exponent in the equation below for two points on the linear portion of the transfer-function curve (this value represents points near saturation): ǒ Ǔ +ǒ Exposure (2) Exposure (1) g Ǔ Output signal (2) Output signal (1) 7. ADB rejection ratio is – 20 times the logarithm of the ac amplitude at the output divided by the ac amplitude at ADB. 8. SRGn rejection ratio is – 20 times the logarithm of the ac amplitude at the output divided by the ac amplitude at SRGn. 9. ABG rejection ratio is – 20 times the logarithm of the ac amplitude at the output divided by the ac amplitude at ABG. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 11 TC241 780- × 488-PIXEL CCD IMAGE SENSOR SOCS006C – AUGUST 1986 – REVISED DECEMBER 1991 optical characteristics, TA = 40°C (unless otherwise noted) PARAMETER Sensitivity No IR filter With IR filter MIN TYP MAX 150 Measured at VU (see Notes 10 and 11) UNIT mV/lx 19 Saturation signal, Vsat (see Note 12) Antiblooming disabled, interlace off 320 400 mV Maximum usable signal, Vuse Antiblooming enabled, interlace on 180 360 mV Blooming overload ratio (see Note 13) Blooming-overload Interlace on 100 Interlace off 200 200 x 103 Image-area well capacity Smear (see Note 14) Dark current See Note 15 Interlace off Dark signal (see Note 16) Pixel uniformity Output signal = 50 mV ±10 mV Column uniformity Output signal = 50 mV ±10 mV Shading Output signal = 100 mV TA = 21°C TC241-30 electrons 0.00072 nA/cm2 0.027 15 TC241-40 20 TC241-30 3.5 TC241-40 5 TC241-30 0.5 TC241-40 0.7 mV mV mV 15% NOTES: 10. 11. 12. 13. 14. Sensitivity is measured at an integration time of 16.667 ms with a source temperature of 2856 K. A CM-500 filter is used. VU is the output voltage that represents the threshold of operation of antiblooming. VU ≈ 1/2 saturation signal. Saturation is the condition in which further increase in exposure does not lead to further increase in output signal. Blooming-overload ratio is the ratio of blooming exposure to saturation exposure. Smear is a measure of the error induced by transferring charge through an illuminated pixel in shutterless operation. It is equivalent to the ratio of the single-pixel transfer time during a fast dump to the exposure time using an illuminated section that is 1/10 of the image-area vertical height with recommended clock frequencies. 15. Exposure time is 16.67 ms and the fast-dump clocking rate during vertical timing is 2.05 MHz. 16. Dark-signal level is measured from the dummy pixels. 12 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TC241 780- × 488-PIXEL CCD IMAGE SENSOR SOCS006C – AUGUST 1986 – REVISED DECEMBER 1991 PARAMETER MEASUREMENT INFORMATION Blooming Point With Antiblooming Enabled VO Blooming Point With Antiblooming Disabled Dependent on Well Capacity Vsat (min) Level Dependent Upon Antiblooming Gate High Level Vuse (max) Vuse (typ) DR Vn Lux (light input) DR (dynamic range) voltage + camera white-clip V n Vn = noise-floor voltage Vsat (min) = minimum saturation voltage Vuse (max) = maximum usable voltage Vuse (typ) = typical user voltage (camera white clip) NOTES: A. Vuse (typ) is defined as the voltage determined to equal the camera white clip. This voltage must be less than Vuse (max). B. A system trade-off is necessary to determine the system light sensitivity versus the signal/noise ratio. By lowering the Vuse (typ), the light sensitivity of the camera is increased; however, this sacrifices the signal/noise ratio of the camera. Figure 8. Typical Vsat, Vuse Relationship POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 13 TC241 780- × 488-PIXEL CCD IMAGE SENSOR SOCS006C – AUGUST 1986 – REVISED DECEMBER 1991 PARAMETER MEASUREMENT INFORMATION 100% VIH min Intermediate Level VIL max 0% t1 t2 Slew rate between 10% and 90% = 70 to 120 V/µs Ratio t1 : t2 at 2 MHz = 4:3 Ratio t1 : t2 at 1 MHz = 1:1 Figure 9. Typical Clock Waveform for ABG, IAG, and SAG VIH min 100% 10% VIL max 0% t1 t2 Slew rate between 10% and 90% = 300 V/µs Ratio t1 : t2 = 1:1 Figure 10. Typical Clock Waveform for SRG1, SRG2, SRG3, and TRG 1.5 V to 2.5 V SRG –8V – 8 V to – 10 V 0% OUT 90% 100% CCD Delay τ 10 ns 15 ns Sample and Hold Figure 11. SRG and CCD Output Waveforms 14 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TC241 780- × 488-PIXEL CCD IMAGE SENSOR SOCS006C – AUGUST 1986 – REVISED DECEMBER 1991 TYPICAL CHARACTERISTICS VERTICAL MODULATION TRANSFER FUNCTION (BARS PARALLEL TO SERIAL REGISTER) HORIZONTAL MODULATION TRANSFER FUNCTION (BARS PERPENDICULAR TO SERIAL REGISTER) 0.8 0.8 0.6 0.6 MTF 1 MTF 1 0.4 0.4 0.2 0.2 λ = 400 to 700-nm Monochromatic Light VADB = 12 V TA = 25°C 0 λ = 400 to 700-nm Monochromatic Light VADB = 12 V TA = 25°C 0 0 0.2 0.4 0.6 0.8 1 0 0.2 Normalized Spatial Frequency 0 3.7 7.4 11.1 0.4 14.8 0 18.5 8.7 Spatial Frequency – Cycles/mm 1 17.4 26.1 34.8 43.5 Figure 13 AMPLIFIER NOISE VOLTAGE vs FREQUENCY RESPONSIVITY vs WAVELENGTH OF INCIDENT LIGHT 1000 100% VADB = 12 V TA = 25°C VADB = 12 V TA = 25°C 20% 0.1 10% 7% 5% Noise – nV/ 30% Hz 70% 50% Quantum Efficiency Responsivity – A/W 0.8 Spatial Frequency – Cycles/mm Figure 12 1 0.6 Normalized Spatial Frequency 100 10 3% 2% 0.01 400 600 800 1000 1200 1 103 Incident Wavelength – nm Figure 14 104 105 106 f – Frequency – Hz 107 Figure 15 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 15 TC241 780- × 488-PIXEL CCD IMAGE SENSOR SOCS006C – AUGUST 1986 – REVISED DECEMBER 1991 APPLICATION INFORMATION VSS V VABG+ TMS3473B VSS VAGB– 12 17 11 16 VABG– 15 14 TMS3472A 2 3 4 5 6 7 8 9 10 VSS DLADJ GND 1PC2 PD 1PC1 SRG2,3IN VCC SRG1IN SRG3OUT TRGIN SRG2OUT 2,3PC1 SRG1OUT 2,3PC2 TRGOUT SSR VCC VSS TSR 20 19 12 100 pF TDB SRG3 ADB SRG2 OUT3 SRG1 OUT2 TRG OUT1 AMPGND IDB CDB GND SUB SUB 17 1 4.7 µF ‡ + 100 Ω 4.7 µF + ‡ 5 6 7 8 4.7 µF ‡ + 9 2 3 4 100 Ω 5 6 100 Ω 10 7 + 4.7 µF 11 8 ANLGVCC S/H1 AIN1 S/H2 CIN1 S/H3 IAN2 DGTL VCC CIN2 OUT1 AIN3 OUT2 CIN3 OUT3 ANLG GND DGTL GND 16 15 14 13 12 11 10 9 100 Ω 16 15 100 Ω 14 100 Ω 13 100 Ω OUT3 OUT2 OUT1 VCC VCC 12 22 21 20 19 18 17 16 15 14 13 12 11 47 kΩ 23 47 kΩ 24 25 26 27 T 29 30 1 kΩ 31 32 SH1 33 1 kΩ 11 ABS2 S1 ABS1 S2, 3 ABS0 PD SC (90) PS SC 28 GT BF ABIN CBLK PI CSYNC SH2, 3 CP1 SH1 CP2 GT2 20 pF GT1 X1 GND 10 9 8 7 6 TMS3471C X2 SH2, 3 TL1593 L 4 18 VCC 1 CP2 13 SAG 3 I/N VCC 18 SAG HIGH SAOUT VAGB+ 13 IAG IAG BCP1 GND 19 14 ABG SB ABOUT 20 2 FI PD ABLVL 15 SH2, 3 1 SUB E/L IAOUT 21 SUB VD ABLVL SAIN 16 TC241 22 47 kΩ GP 10 MIDSEL 17 VDS 9 VCC WHTA 8 ABIN 18 BCPS1 7 ABSR WHTB 6 IAIN 19 BCPS0 5 IASR 47 kΩ VGATE 4 I/N 20 GT3 3 ADB VSS HGATE 2 IALVL CLK2M 1 IALVL 5 4 3 2 1 BCP2 34 35 36 37 38 39 40 41 42 43 44 4.7 kΩ Oscillator 14.3-MHz VCC GT3 GT2 15 pF GT1 DC VOLTAGES 12 V ADB 5V VCC – 10 V VSS 2V V – 2.5 V ABLVL –5 V IALVL 4V VABG + –6 V VABG – SUPPORT CIRCUITS DEVICE PACKAGE APPLICATION FUNCTION TMS3471CFS 44 pin flatpack Timing generator NTSC timing generator TMS3472ADW 20 pin flatpack with tabs Serial driver Driver for SRG1, SRG2, SRG3, and TRG TMS3473BDW 20 pin small outline Parallel driver Driver for ABG, IAG, and SAG TL1593CNS 16 pin small outline (EIAJ) Sample and hold Three-channel sample-and-hold IC Figure 16. Typical Application Circuit Diagram † Decoupling capacitors are not shown. ‡ TI recommends designing AC coupled systems. 16 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 SH1 TC241 780- × 488-PIXEL CCD IMAGE SENSOR SOCS006C – AUGUST 1986 – REVISED DECEMBER 1991 MECHANICAL DATA The package for the TC241 consists of a ceramic base, a glass window, and a 22-lead frame. The glass window is sealed to the package by an epoxy adhesive. The package leads are configured in a dual in-line organization and fit into mounting holes with 2.54 mm (0.10 in) center-to-center spacings. TC241 (22 pin) 23,39 (0.921) Optical Center 2,01 x 2,39 (0.079 x 0.094) 2,01 (0.079) C Optical L (see Note B) 18,24 (0.718) 9,35 (0.368) REF 8,00 (0.315) Index Dot 27,81 (1.095) MAX 18,54 MAX (0.730) 3,86 (0.152) MAX 0,25 (0.010) 2,79 (0.110) 10,16 (0.400) TYP 0,46 (0.018) 2,54 (0.100) (see Note D) 5,50 ± 0,76 (0.217 ± 0.030) ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES 7/94 NOTES: A. Single dimensions are nominal. B. The center of the package and the center of the image area are not coincident. C. The distance from the top of the glass to the image-sensor surface is typically 1,46 mm (0.057 in). The glass is 0,95 ±0,08 mm thick and has an index of refraction of 1.53. D. Each pin centerline is located within 0,25 mm (0.010 in) of its true longitudinal position. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 17 IMPORTANT NOTICE Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability. TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements. CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO BE FULLY AT THE CUSTOMER’S RISK. In order to minimize risks associated with the customer’s applications, adequate design and operating safeguards must be provided by the customer to minimize inherent or procedural hazards. TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right of TI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. TI’s publication of information regarding any third party’s products or services does not constitute TI’s approval, warranty or endorsement thereof. Copyright 1998, Texas Instruments Incorporated