2MBI150SC-120 IGBT Module 1200V / 150A 2 in one-package Features · High speed switching · Voltage drive · Low inductance module structure Applications · Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply · Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltaga Collector Continuous current 1ms 1ms Max. power dissipation Operating temperature Storage temperature Isolation voltage *1 Screw torque Symbol VCES VGES Tc=25°C IC Tc=80°C Tc=25°C IC pulse Tc=80°C -IC -IC pulse PC Tj Tstg V is Mounting *2 Terminals *2 Rating 1200 ±20 200 150 400 300 150 300 1000 +150 -40 to +125 AC 2500 (1min. ) 3.5 3.5 Unit V V A A A A A A W °C °C V N·m N·m Equivalent Circuit Schematic C2E1 E2 C1 G1 E1 G2 *1 : Aii terminals should be connected together when isolation test will be done *2 : Recommendable value : 2.5 to 3.5 N·m(M5) Electrical characteristics (at Tj=25°C unless otherwise specified) Item Symbol Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage ICES IGES VGE(th) VCE(sat) Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Cies Coes Forward on voltage Cres ton tr tr(i) toff tf VF Reverse recovery time trr Turn-off time Characteristics Min. Typ. Max. – – 2.0 – – 0.4 5.5 7.2 8.5 – 2.3 2.6 – 2.8 – – 18000 – – 3750 – – 3300 – – 0.35 1.2 – 0.25 0.6 – 0.1 – – 0.45 1.0 – 0.08 0.3 – 2.3 3.0 – 2.0 – – – 0.35 Conditions Unit VGE=0V, VCE=1200V VCE=0V, VGE=±20V VCE=20V, IC=150mA Tc=25° C VGE=15V, IC=150A Tc=125°C VGE=0V VCE=10V f=1MHz VCC =600V IC=150A VGE=±15V RG=5.6 ohm mA µA V V Tj=25°C Tj=125°C IF=150A V IF=150A, VGE=0V pF µs µs Thermal resistance characteristics Item Thermal resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f)*2 Characteristics Min. Typ. – – – – – 0.025 Conditions Unit Max. 0.125 IGBT 0.26 Diode the base to cooling fin – *2 : This is the value which is defined mounting on the additional cooling fin with thermal compound °C/W °C/W °C/W E2 IGBT Module 2MBI150SC-120 Characteristics (Representative) Collector current vs. Collector-Emiiter voltage Tj= 125°C (typ.) Collector current vs. Collector-Emiiter voltage Tj= 25°C (typ.) 350 350 VGE= 20V 15V 12V VGE= 20V15V 12V 300 300 250 Collector current : Ic [ A ] Collector current : Ic [ A ] 250 200 10V 150 100 50 10V 200 150 100 50 8V 8V 0 0 0 1 2 3 4 5 0 Collector - Emitter voltage : VCE [ V ] 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] Collector current vs. Collector-Emiiter voltage VGE=15V (typ.) Collector-Emiiter voltage vs. Gate-Emitter voltage Tj= 25°C (typ.) 350 10 Tj= 25°C 300 Tj= 125°C Collector - Emitter voltage : VCE [ V ] 8 Collector current : Ic [ A ] 250 200 150 100 6 4 Ic= 300A Ic= 150A 2 Ic= 75A 50 0 0 0 1 2 3 4 5 5 15 20 Gate - Emitter voltage : VGE [ V ] Capacitance vs. Collector-Emiiter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C Dynamic Gate charge (typ.) Vcc=600V, Ic=150A, Tj= 25°C Collector - Emitter voltage : VCE [ V ] 50000 Capacitance : Cies, Coes, Cres [ pF ] 10 Collector - Emitter voltage : VCE [ V ] Cies 10000 5000 Coes 25 1000 25 800 20 600 15 400 10 200 5 1000 Cres 500 0 0 5 10 15 20 25 Collector - Emitter voltage : VCE [ V ] 30 35 0 0 500 1000 Gate charge : Qg [ nC ] 1500 IGBT Module 2MBI150SC-120 Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg= 5.6ohm, Tj= 125°C Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg= 5.6ohm, Tj= 25°C 1000 1000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] toff toff 500 ton tr 100 tf 500 ton tr tf 100 50 50 0 50 100 150 200 250 0 50 100 150 200 Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=150A, VGE=±15V, Tj= 25°C Switching loss vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=5.6ohm 5000 40 Eon(125°C) ton Switching loss : Eon, Eoff, Err [ mJ/pulse ] toff Switching time : ton, tr, toff, tf [ nsec ] 250 Collector current : Ic [ A ] Collector current : Ic [ A ] tr 1000 500 100 tf 30 Eon(25°C) 20 Eoff(125°C) Eoff(25°C) 10 Err(125°C) Err(25°C) 50 0 1 10 100 0 100 200 300 Collector current : Ic [ A ] Gate resistance : Rg [ ohm ] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=150A, VGE=±15V, Tj= 125°C 100 350 Eon Switching loss : Eon, Eoff, Err [ mJ/pulse ] 300 80 250 60 200 150 40 Eoff 100 20 50 Err 0 0 1 10 Gate resistance : Rg [ ohm ] 100 0 200 400 600 800 1000 1200 1400 IGBT Module 2MBI150SC-120 Reverse recovery characteristics (typ.) Vcc=600V, VGE=±15V, Rg=5.6ohm Forward current vs. Forward on voltage (typ.) 350 300 Tj=25°C Tj=125°C 300 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] trr(125°C) Forward current : IF [ A ] 250 200 150 100 Irr(125°C) 100 trr(25°C) Irr(25°C) 50 0 10 0 1 2 3 4 Transient thermal resistance 0.5 Thermal resistanse : Rth(j-c) [ °C/W ] FWD IGBT 0.1 0.05 0.01 0.005 0.001 0.01 0.1 Pulse width : Pw [ sec ] Outline Drawings, mm mass : 240g 0 50 100 150 Forward current : IF [ A ] Forward on voltage : VF [ V ] 1 200 250