2SK3753-01R N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Equivalent circuit schematic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. Power Dissipation Operating and Storage Temperature range Isolation Voltage Symbol VDS ID ID(puls] VGS IAR EAS dVDS/dt dV/dt PD Tch Tstg VISO Drain(D) Ratings 600 ±13 ±52 ±30 13 216.7 20 5 95 3.13 +150 -55 to +150 2 Unit V A A V A mJ Remarks Gate(G) Note *1 Note *2 kV/µs VDS < =600V kV/µs Note *4 Tc=25°C W Ta=25°C Source(S) Note *1:Tch < = 150°C,Repetitive and Non-repetitive Note *2:StartingTch=25°C,IL=2.36mH,VCC=60V EAS limited by maximum channel temperature and Avalanche current. See to the ‘Avalanche Energy’ graph Note *3:Repetitive rating:Pulse width limited by °C maximum channel temperature. °C t=60sec. f=60Hz See to the ‘Transient Thermal impedance’ kVrms graph. Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-Source Breakdown Voltage Gate Threshold Voltage Symbol BVDSS VGS(th) Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time ton IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS Q GD IAV VSD trr Q rr Turn-Off Time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche Capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Note *4:IF < = -ID, -di/dt = 50A/µs,VCC< = BVDSS,Tch< = 150°C Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS Tch=25°C VDS=600V VGS=0V Tch=125°C VDS=480V VGS=0V VGS=±30V VDS=0V ID=6A VGS=10V ID=6A VDS=25V VDS=25V VGS=0V f=1MH VCC=300V ID=6A VGS=10V RGS=10 Ω VCC=300V ID=12A VGS=10V L=2.36mH Tch=25°C IF=12A VGS=0V Tch=25°C IF=12A VGS=0V -di/dt=100A/µs Tch=25°C Min. Typ. 600 3.0 Max. 5.0 25 250 100 0.65 10 0.50 5.5 11 1600 2400 160 240 7 10.5 18 27 16 24 35 50 8 15 34 51 12.5 19 11.5 17.5 13 1.00 1.50 0.75 6.5 Units V V µA µA nA Ω S pF ns nC A V µs µC Thermal characteristics Item Thermal resistance www.fujielectric.co.jp/fdt/scd Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 1.32 40.0 Units °C/W °C/W 1 2SK3753-01R FUJI POWER MOSFET Characteristics 250 Allowable Power Dissipation PD=f(Tc) 10 2 Safe operating area ID=f(VDS):Single Pulse,Tc=25°C t= 1µ s 200 10µs 10 1 D.C. 100µs ID [A] PD [W] 150 1ms 100 10 0 10ms 50 100ms 0 10 0 25 50 75 100 125 150 -1 10 0 10 1 10 Tc [°C] 30 2 10 3 VDS [V] Typical Output Characteristics ID=f(VDS):80 µ s pulse test,Tch=25 °C Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C 28 20V 26 10V 24 8V 22 7.5V 10 20 ID[A] ID [A] 18 16 14 7.0V 1 12 10 8 VGS=6.5V 6 4 0.1 2 0 0 2 4 6 8 10 12 14 16 18 20 22 0 1 2 3 VDS [V] 100 4 5 6 7 8 9 10 VGS[V] Typical Transconductance gfs=f(ID):80 µ s pulse test,VDS=25V,Tch=25°C 1.4 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µ s pulse test,Tch=25°C VGS=6.5V 7.0V 1.3 1.2 1.1 1.0 gfs [S] RDS(on) [ Ω ] 10 7.5V 0.9 8V 10V 0.8 20V 0.7 0.6 0.5 1 0.4 0.3 0.2 0.1 0.1 0.1 0.0 1 10 ID [A] 0 2 4 6 8 10 12 14 16 18 20 22 24 26 ID [A] 2 2SK3753-01R 2.0 FUJI POWER MOSFET Drain-Source On-state Resistance RDS(on)=f(Tch):ID=6A,VGS=10V 7.0 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA 6.5 1.8 6.0 1.6 5.5 1.4 5.0 VGS(th) [V] RDS(on) [ Ω ] max. 1.2 1.0 4.0 3.5 min. 3.0 max. 0.8 4.5 2.5 typ. 0.6 2.0 1.5 0.4 1.0 0.2 0.5 0.0 0.0 -50 -25 0 25 50 75 100 125 150 -50 -25 0 Tch [°C] 24 25 50 75 100 125 150 Tch [°C] Typical Gate Charge Characteristics VGS=f(Qg):ID=12A,Tch=25°C 10n Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 22 20 Vcc= 120V Ciss 18 1n 300V 16 480V C [F] VGS [V] 14 12 100p Coss 10 8 6 10p Crss 4 2 0 0 10 20 30 40 50 60 70 1p -1 10 80 10 0 Qg [nC] 100 10 1 10 2 10 3 VDS [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25°C Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10 Ω 10 2 tr td(off) t [ns] IF [A] 10 td(on) 10 1 10 0 tf 1 0.1 0.00 0.25 0.50 0.75 1.00 VSD [V] 1.25 1.50 1.75 2.00 10 0 10 1 ID [A] 3 2SK3753-01R FUJI POWER MOSFET Maximum Avalanche Energy vs. starting Tch EAS=f(starting Tch):Vcc=60V 500 IAS=6A 450 400 350 IAS=8A EAS [mJ] 300 250 200 IAS=13A 150 100 50 0 0 25 50 75 100 125 150 starting Tch [°C] 2 10 Maximum Avalanche Current vs Pulse width IAV=f(tAV):starting Tch=25°C,Vcc=60V Avalanche Current I AV [A] Single Pulse 1 10 0 10 10 -1 -2 10 -8 10 10 -7 -6 10 10 -5 -4 10 -2 10 10 -3 10 -2 -1 10 Zth(ch-c) [°C/W] tAV [sec] 10 1 10 0 Transient Thermal Impedance Zth(ch-c)=f(t):D=0 -1 10 -2 10 -3 10 10 -6 10 -5 -4 10 -3 10 t [sec] 10 0 http://www.fujielectric.co.jp/fdt/scd/ 4