2SK3927-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power See to P4 Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Max. Power Dissipation Operating and Storage Temperature range Symbol V DS VDSX ID ID(puls] VGS IAR EAS EAR Ratings 250 220 34 ±136 ±30 34 665.7 27 Unit V V A A V A mJ mJ Drain(D) VGS=-30V Gate(G) Note *1 Note *2 Note *3 dV DS /dt dV/dt -di/dt PD Tch Tstg 20 5 100 270 2.02 +150 -55 to +150 Item Drain-Source Breakdown Voltage Gate Threshold Voltage Symbol BVDSS VGS(th) Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time ton IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD V SD trr Qrr Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge Source(S) Note *1:Tch < = 150°C,Repetitive and Non-repetitive Note *2:StartingTch=25°C,IAS=14A,L=5.71mH, VCC=48V,RG=50Ω kV/µs kV/µs A/µs W VDS< = 250V Note *4 Note *5 Tc=25°C Ta=25°C °C °C Electrical characteristics (Tc =25°C unless otherwise specified) Turn-Off Time toff Equivalent circuit schematic Remarks EAS limited by maximum channel temperature and Avalanche current. See to the ‘Avalanche Energy’ graph Note *3:Repetitive rating:Pulse width limited by maximum channel temperature. See to the ‘Transient Thermal impedance’ graph. < -ID, -di/dt=100A/µs,VCC= < BVDSS,Tch= < 150°C Note *4:IF = < -ID, dv/dt=5kV/µs,VCC= < 150°C < BVDSS,Tch= Note *5:IF= Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS Tch=25°C VDS =250V VGS=0V Tch=125°C VDS =200V VGS=0V VGS=±30V VDS=0V ID=17A VGS=10V ID=17A VDS=25V VDS =75V VGS=0V f=1MH VCC=48V ID=17A VGS=10V Min. Typ. 250 3.0 13 RGS=10 Ω VCC =125V ID=34A VGS=10V IF=34A VGS=0V Tch=25°C IF=34A VGS=0V -di/dt=100A/µs Tch=25°C Max. 5.0 25 2.0 100 110 85 26 1850 2800 220 330 21 32 20 30 19 29 56 85 19 29 56 85 20 30 19 29 1.00 1.50 140 250 0.5 1.25 Units V V µA mA nA mΩ S pF ns nC V ns µC Thermal characteristics Item Thermal resistance www.fujielectric.co.jp/fdt/scd Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 0.463 75 Units °C/W °C/W 1 2SK3927-01L,S,SJ FUJI POWER MOSFET Characteristics 300 Allowable Power Dissipation PD=f(Tc) 100 Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25°C 90 250 20V 10V 80 7.5V 70 200 ID [A] PD [W] 60 150 7V 50 40 100 6.5V 30 20 VGS=6V 50 10 0 0 0 25 50 75 100 125 0 150 2 4 6 Tc [°C] 100 8 10 12 14 16 VDS [V] Typical Transfer Characteristic ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C 100 Typical Transconductance gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C 10 gfs [S] ID[A] 10 1 1 0.1 0.01 0 1 2 3 4 5 6 7 8 9 0.1 0.1 10 1 10 VGS[V] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25°C 0.20 VGS=6.5V 7.0V 0.16 RDS(on) [ Ω ] 0.30 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=17A,VGS=10V 0.25 7.5V 8V 0.20 10V 20V 0.14 0.12 RDS(on) [ Ω ] 0.18 100 ID [A] 0.15 max. typ. 0.10 0.10 0.05 0.08 0.00 0.06 0 10 20 30 40 50 ID [A] 60 70 80 90 -50 -25 0 25 50 75 100 125 150 Tch [°C] 2 2SK3927-01L,S,SJ 7 FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250uA 24 6 Typical Gate Charge Characteristics VGS=f(Qg):ID=34A,Tch=25°C 20 Vcc= 50V max. 250V 16 4 VGS [V] VGS(th) [V] 5 min. 3 200V 12 8 2 4 1 0 0 -50 -25 0 25 50 75 100 125 0 150 20 40 60 Tch [°C] 10n 80 100 120 140 Qg [nC] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 100 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µs pulse test,Tch=25°C Ciss 1n C [F] IF [A] 10 Coss 100p 1 Crss 10p -1 10 10 0 1 2 10 10 0.1 0.00 3 10 0.25 0.50 10 1.00 1.25 1.50 VSD [V] VDS [V] 3 0.75 Typical Switching Characteristics vs. ID t=f(ID):Vcc=48V,VGS=10V,RG=10Ω 700 Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)<=34A IAS=14A 600 tf 500 2 EAV [mJ] t [ns] 10 td(off) td(on) 400 IAS=21A 300 1 10 IAS=34A 200 tr 100 0 0 10 -1 10 0 10 10 ID [A] 1 2 10 0 25 50 75 100 125 150 starting Tch [°C] 3 2SK3927-01L,S,SJ 2 10 FUJI POWER MOSFET Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25°C,Vcc=48V Avalanche Current I AV [A] Single Pulse 1 10 0 10 -1 10 -8 10 -7 10 -6 -5 10 10 -4 10 -3 -2 10 10 tAV [sec] 1 10 Transient Thermal Impedance Zth(ch-c)=f(t):D=0 0 Zth(ch-c) [°C/W] 10 10 -1 10 -2 10 -3 -6 -5 10 10 10 -4 10 -3 -2 10 -1 0 10 10 t [sec] Outline Drawings (mm) Type(L) Type(S) Type(SJ) 4 1 2 3 1 4 2 3 1 2 3 1 2 3 http://www.fujielectric.co.jp/fdt/scd/ 4