2SK3981-01 FUJI POWER MOSFET 200511 Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220AB Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power High voltage Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Non-repetitive Maximum avalanche energy Repetitive Maximum avalanche energy Maximum drain-source dV/dt Peak diode recovery dV/dt Maximum power dissipation Symbol V DS VDSX ID ID(puls] VGS IAR Ratings 900 900 2.6 ±10.4 ±30 2.6 349.1 EAS EAR dV DS /dt dV/dt PD 9.0 40 5 90 2.02 +150 Unit V V A A V A Remarks VGS=-30V Note *1 mJ Note *2 mJ kV/µs kV/µs W W °C °C Note *3 VDS < = 900V Note *4 Equivalent circuit schematic Drain(D) Tc=25°C Ta=25°C Operating and storage Tch temperature range Tstg -55 to +150 < Note *1 Tch=150°C Note *2 Starting Tch=25°C, IAS=1.1A, L=524mH, VCC=100V, RG=50Ω EAS limited by maximum channel temperrature and avalanche current. See to ‘Avalanche Energy’ graph. Note *3 Repetitve rating : Pulse width limited by maximum channel temperature. See to ‘Transient Thermal impedance’ graph. < Note *4 IF < = -ID, -di/dt=50A/µs, Vcc < = BVDSS, Tch = 150°C Gate(G) Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol BVDSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD V SD trr Qrr Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS VDS=900V VGS=0V Tch=25°C VDS=720V VGS=0V Tch=125°C VGS=±30V VDS=0V ID=1.3A VGS=10V ID=1.3A VDS=25V Min. Typ. 900 3.0 1.3 VDS =25V VGS=0V f=1MHz VCC=600V ID=1.3A VGS=10V RGS=10 Ω V CC=450V ID=2.6A VGS=10V IF=2.6A VGS=0V Tch=25°C IF=2.6A VGS=0V -di/dt=100A/µs Tch=25°C 4.8 2.6 330 44 2.5 10.5 6.5 28 20 13 4.5 4.3 1.00 1.5 4.0 Max. 5.0 25 250 100 6.4 495 66 5.0 15.8 9.8 42 30 19.5 6.5 6.8 1.50 Units V V µA nA Ω S pF ns nC V µs µC Thermalcharacteristics Item Thermal resistance http://www.fujielectric.co.jp/fdt/scd/ Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 1.389 62.0 Units °C/W °C/W 1 2SK3981-01(900V/2.6A/6.4Ω) FUJI POWER MOSFET Characteristics 2 2SK3981-01(900V/2.6A/6.4Ω) FUJI POWER MOSFET 3 2SK3981-01(900V/2.6A/6.4Ω) FUJI POWER MOSFET http://www.fujielectric.co.jp/fdt/scd/ 4