2SK3921-01L,S,SJ Super FAP-G Series FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) See to P4 Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Non-repetitive Maximum avalanche energy Repetitive Maximum avalanche energy Maximum drain-source dV/dt Peak diode recovery dV/dt Maximum power dissipation Operating and storage temperature range Symbol V DS VDSX ID ID(puls] VGS IAR Ratings 120 90 67 ±268 ±30 67 EAS 719.1 dV DS /dt dV/dt PD Tch Tstg 27.0 20 5 2.02 270 +150 -55 to +150 Unit V V A A V A Remarks VGS=-30V Note *1 mJ Note *2 mJ kV/μs kV/μs W W °C °C Note *3 VDS < = 120V Note *4 Equivalent circuit schematic Drain(D) Ta=25°C Tc=25°C Gate(G) Note *1 Tch< =150°C Note *2 Starting Tch=25°C, IAS=27A, L=1.32mH, VCC=48V, RG=50Ω EAS limited by maximum channel temperrature and avalanche current. See to ‘Avalanche Energy’ graph. Note *3 Repetitve rating : Pulse width limited by maximum channel temperature. See to ‘Transient Thermal impedance’ graph. < Note *4 IF < = -ID, -di/dt=50A/μs, Vcc < = BVDSS, Tch = 150°C Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD V SD t rr Qrr Min. Test Conditions ID= 250μA VGS=0V ID= 250μA VDS=VGS VDS=120V VDS=96V VGS=±30V ID=33.5A VGS=0V VGS=0V VDS=0V VGS=10V Typ. 120 3.0 5.0 25 250 100 30.0 Tch=25°C Tch=125°C ID=33.5A VDS=25V VDS =75V VGS=0V f=1MHz VCC=48V ID=33.5A VGS=10V 14 RGS=10 Ω VCC =60V ID=67A VGS=10V IF=67A VGS=0V Tch=25°C IF=67A VGS=0V -di/dt=100A/μs Tch=25°C Max. 24.6 28 1880 2820 360 540 30 45 20 30 35 53 50 75 23 35 52 78 16 24 18 27 1.10 1.50 150 0.9 Units V V μA nA mΩ S pF ns nC V ns μC Thermalcharacteristics Item Thermal resistance http://www.fujielectric.co.jp/fdt/scd/ Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 0.463 62.0 Units °C/W °C/W 1 2SK3921-01L,S,SJ FUJI POWER MOSFET Characteristics 280 Allowable Power Dissipation PD=f(Tc) 140 Typical Output Characteristics ID=f(VDS):80 μs pulse test,Tch=25°C 20V 240 120 200 100 10V 8.0V 80 ID [A] PD [W] 160 7.5V 120 60 7.0V 80 40 40 20 6.5V 6.0V VGS=5.5V 0 0 25 50 75 100 125 0 150 0 1 2 3 4 5 6 7 VDS [V] Tc [°C] Typical Transconductance gfs=f(ID):80 μs pulse test,VDS=25V,Tch=25°C 100 Typical Transfer Characteristic ID=f(VGS):80 μs pulse test,VDS=25V,Tch=25°C 100 gfs [S] ID[A] 10 10 1 1 0.1 0.1 0.1 0 1 2 3 4 5 6 7 8 9 10 1 10 VGS[V] 0.20 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 μs pulse test,Tch=25 °C VGS=5.5V 6.0V 6.5V 7.0V 100 ID [A] 0.08 7.5V Drain-Source On-state Resistance RDS(on)=f(Tch):ID=33.5A,VGS=10V 0.07 0.16 RDS(on) [ Ω ] RDS(on) [ Ω ] 0.06 0.12 0.08 0.05 0.04 max. 0.03 typ. 0.02 0.04 10V 20V 0.00 0 20 40 60 ID [A] 80 100 120 0.01 0.00 -50 -25 0 25 50 75 100 125 150 Tch [°C] 2 2SK3921-01L,S,SJ 7.0 FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250μA 14 Typical Gate Charge Characteristics VGS=f(Qg):ID=67A,Tch=25 °C 6.5 12 6.0 max. 5.0 10 Vcc=60V 4.5 4.0 3.5 min. 3.0 8 VGS [V] VGS(th) [V] 5.5 6 2.5 4 2.0 1.5 2 1.0 0.5 0.0 0 -50 -25 0 25 50 75 100 125 150 0 10 20 30 40 50 60 70 80 90 Qg [nC] Tch [°C] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 100 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 μs pulse test,Tch=25°C Ciss 3 10 2 10 IF [A] C [pF] 10 Coss 1 Crss 1 10 0 10 10 1 0.1 0.00 2 10 0.25 0.50 0.75 1.00 1.25 1.50 VSD [V] VDS [V] Typical Switching Characteristics vs. ID t=f(ID):Vcc=48V,VGS=10V,RG=10 Ω 800 Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)<=67A IAS=27A 700 tf 3 10 600 td(off) EAV [mJ] 500 IAS=41A 2 t [ns] 10 td(on) 400 IAS=67A 300 tr 1 10 200 100 0 0 10 10 -1 10 0 1 10 ID [A] 2 10 0 25 50 75 100 125 150 starting Tch [°C] 3 2SK3921-01L,S,SJ 3 Avalanche Current I AV [A] 10 FUJI POWER MOSFET Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25°C,Vcc=48V 2 10 Single Pulse 1 10 0 10 -1 10 -8 10 10 -7 -6 10 10 -5 -4 10 10 -3 -2 10 tAV [sec] 1 10 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 0 Zth(ch-c) [°C/W] 10 -1 10 -2 10 -3 10 10 -6 10 -5 -4 10 -3 10 -2 10 -1 10 0 10 t [sec] Outline Drawings [mm] T-pack(L) http://www.fujielectric.co.jp/fdt/scd/ T-pack(S) T-pack(SJ) [D2-pack] 4