6MBI75S-140 IGBT Modules IGBT MODULE ( S series) 1400V / 75A 6 in one-package Features · Compact Package · P.C.Board Mount Module · Low VCE(sat) Applications · Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply · Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltage Collector Continuous Tj=25°C current Tj=75°C 1ms Tj=25°C Tj=75°C 1ms Max. power dissipation (1 device) Operating temperature Storage temperature Isolation voltage *1 Screw torque Symbol VCES VGES IC IC pulse -IC -IC pulse PC Tj Tstg Vis Mounting *2 Rating 1400 ±20 100 75 200 150 75 150 520 +150 -40 to +125 AC 2500 (1min.) 3.5 Unit V V A Equivalent Circuit Schematic 21(P) 13(P) 5(Gv) 1(Gu) A A A W °C °C V N·m 9(Gw) 6(Ev) 2(Eu) 19(U) 10(Ew) 17(V) 15(W) 3(Gx) 7(Gy) 11(Gz) 4(Ex) 8(Ey) 12(Ez) 14(N) 20(N) *1:All terminals should be connected together when isolation test will be done. *2: Recommendable value : 2.5 to 3.5 N·m (M5) Electrical characteristics (at Tj=25°C unless otherwise specified) Item Symbol Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage ICES IGES VGE(th) VCE(sat) Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Diode forward on voltage Cies Coes Cres ton tr tr(i) toff tf VF Reverse recovery time trr Turn-off time Characteristics Min. Typ. – – – – 5.5 7.2 – 2.4 – 3.0 – 9000 – 1875 – 1650 – 0.35 – 0.25 – 0.1 – 0.45 – 0.08 – 2.6 – 2.2 – – Max. 1.0 0.2 8.5 2.7 – – – – 1.2 0.6 – 1.0 0.3 3.4 – 0.35 Characteristics Min. Typ. Max. Conditions Unit VGE=0V, VCE=1400V VCE=0V, VGE=±20V VCE=20V, IC=75mA Tj=25°C VGE=15V, IC=75A Tj=125°C VGE=0V VCE=10V f=1MHz VCC =800V IC=75A VGE=±15V RG=16Ω mA µA V V Tj=25°C Tj=125°C IF=75A V IF=75A, VGE=0V pF µs µs Thermal resistance characteristics Item Thermal resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f)*2 – – – – – 0.05 0.24 0.50 – Conditions Unit IGBT FWD the base to cooling fin °C/W °C/W °C/W *2 : This is the value which is defined mounting on the additional cooling fin with thermal compound 6MBI75S-140 IGBT Module Characteristics Collector current vs. Collector-Emitter voltage Tj= 125°C (typ.) Collector current vs. Collector-Emitter voltage Tj= 25°C (typ.) 200 200 VGE= 20V 15V 12V VGE= 20V 15V 12V 150 Collector current : Ic [ A ] Collector current : Ic [ A ] 150 10V 100 10V 100 50 50 8V 8V 0 0 0 1 2 3 4 5 0 Collector - Emitter voltage : VCE [ V ] 2 3 4 5 Collector - Emitter voltage : VCE [ V ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25°C (typ.) 200 10 Tj= 125°C Collector - Emitter voltage : VCE [ V ] Tj= 25°C 150 Collector current : Ic [ A ] 1 100 50 8 6 4 Ic= 150A Ic= 75A 2 Ic= 37.5A 0 0 0 1 2 3 4 5 5 10 15 20 Collector - Emitter voltage : VCE [ V ] Gate - Emitter voltage : VGE [ V ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C Dynamic Gate charge (typ.) Vcc=800V, Ic=75A, Tj= 25°C 20000 25 1000 25 800 20 600 15 400 10 200 5 10000 Collector - Emitter voltage : VCE [ V ] Capacitance : Cies, Coes, Cres [ pF ] Cies Coes 1000 Cres 100 0 0 5 10 15 20 25 Collector - Emitter voltage : VCE [ V ] 30 35 0 200 400 Gate charge : Qg [ nC ] 600 0 800 6MBI75S-140 IGBT Module Switching time vs. Collector current (typ.) Vcc=800V, VGE=±15V, Rg= 16ohm, Tj= 125°C Switching time vs. Collector current (typ.) Vcc=800V, VGE=±15V, Rg= 16ohm, Tj= 25°C 1000 1000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] toff ton 500 toff tr 100 500 ton tr 100 tf tf 50 50 0 50 100 150 0 50 100 150 Collector current : Ic [ A ] Collector current : Ic [ A ] Switching time vs. Gate resistance (typ.) Vcc=800V, Ic=75A, VGE=±15V, Tj= 25°C Switching loss vs. Collector current (typ.) Vcc=800V, VGE=±15V, Rg=16ohm 5000 30 Eon(125°C) toff Switching loss : Eon, Eoff, Err [ mJ/pulse ] tr 1000 500 100 tf 25 Eon(25°C) 20 Eoff(125°C) 15 Eoff(25°C) 10 Err(125°C) 5 Err(25°C) 50 0 5 10 50 100 500 0 50 Gate resistance : Rg [ohm] 100 150 Collector current : Ic [ A ] Switching loss vs. Gate resistance (typ.) Vcc=800V, Ic=75A, VGE=±15V, Tj= 125°C 60 200 Eon Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] ton 50 150 40 30 100 20 Eoff 50 10 Err 0 0 5 10 50 100 Gate resistance : Rg [ohm] 500 0 200 400 600 800 1000 1200 1400 1600 6MBI75S-140 IGBT Module Reverse recovery characteristics (typ.) Vcc=800V, VGE=±15V, Rg=16ohm Forward current vs. Forward on voltage (typ.) 200 300 Tj=125°C Tj=25°C Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Forward current : IF [ A ] 150 100 50 0 0 1 2 3 4 Forward on voltage : VF [ V ] 1 Thermal resistanse : Rth(j-c) [ °C/W ] FWD IGBT 0.1 0.01 0.1 Pulse width : Pw [ sec ] Outline Drawings, mm mass : 260g trr(25°C) Irr(125°C±) Irr(25°C) 10 0 50 100 Forward current : IF [ A ] Transient thermal resistance 0.01 0.001 trr(125°C) 100 1 150