7MBR50VM120-50 IGBT Modules IGBT MODULE (V series) 1200V / 50A / PIM Features Low VCE (sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items Symbols Inverter Collector-Emitter voltage Gate-Emitter voltage Collector current Converter Brake Collector power dissipation Collector-Emitter voltage Gate-Emitter voltage Collector current Collector power dissipation Repetitive peak reverse voltage (Diode) Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I2t (Non-Repetitive) Conditions VCES VGES Ic Icp -Ic -Ic pulse Pc VCES VGES IC I CP PC VRRM VRRM IO I FSM I 2t Junction temperature Tj Operating junciton temperature (under switching conditions) Tjop Case temperature Storage temperature Tc Tstg Continuous 1ms Tc=80°C Tc=80°C 1ms 1 device Continuous 1ms 1 device Tc=80°C Tc=80°C 50Hz/60Hz, sine wave 10ms, Tj=150°C half sine wave Inverter, Brake Converter Inverter, Brake Converter Isolation voltage between terminal and copper base (*1) Viso between thermistor and others (*2) AC : 1min. Screw torque Mounting (*3) M5 - Maximum ratings 1200 ±20 50 100 50 100 280 1200 ±20 35 70 210 1200 1600 50 360 648 175 150 150 150 125 -40 to +125 V V A W V V A W V V A A A 2s °C 2500 VAC 3.5 Nm Note *1: All terminals should be connected together during the test. Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable value : 2.5-3.5 Nm (M5) 1 Units 7MBR50VM120-50 IGBT Modules Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Symbols Conditions I CES I GES VGE (th) VGE = 0V, VCE = 1200V VGE = 0V, VGE = ±20V VCE = 20V, I C = 50mA VCE (sat) (terminal) VGE = 15V I C = 50A Collector-Emitter saturation voltage Inverter VCE (sat) (chip) Input capacitance Turn-on time Turn-off time Cies ton tr tr (i) toff tf VF (terminal) Tj=25°C Tj=125°C Tj=150°C Tj=25°C VGE = 15V Tj=125°C I C = 50A Tj=150°C VCE = 10V, VGE = 0V, f = 1MHz VCC = 600V I C = 50A VGE = +15 / -15V RG = 15Ω Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C I F = 50A Forward on voltage Brake Units mA nA V V nF µs V VF (chip) I F = 50A trr I F = 50A Zero gate voltage collector current I CES VGE = 0V VCE = 1200V - - 1.0 mA Gate-Emitter leakage current I GES VCE = 0V VGE = +20 / -20V - - 200 nA VCE (sat) (terminal) VGE = 15V I C = 35A 465 3305 2.10 2.45 2.50 1.85 2.20 2.25 0.39 0.09 0.53 0.06 1.70 1.35 5000 495 3375 2.55 2.30 1.20 0.60 1.00 0.30 1.00 2.05 1.0 520 3450 Reverse recovery time Collector-Emitter saturation voltage VCE (sat) (chip) Turn-on time Turn-off time Reverse current Thermistor Converter Characteristics min. typ. max. 1.0 200 6.0 6.5 7.0 2.20 2.65 2.55 2.60 1.85 2.30 2.20 2.25 4.2 0.39 1.20 0.09 0.60 0.03 0.53 1.00 0.06 0.30 2.25 2.70 2.50 2.45 1.90 2.35 2.15 2.10 0.1 ton tr toff tf IRRM VGE = 15V I C = 35A Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C VCE = 600V I C = 35A VGE = +15 / -15V RG = 27Ω VR = 1200V terminal chip Forward on voltage VFM (chip) Reverse current IRRM Resistance R B value B VR = 1600V T = 25°C T = 100°C T = 25 / 50°C Symbols Conditions I F = 50A µs V µs mA V mA Ω K Thermal resistance characteristics Items Thermal resistance (1device) Rth(j-c) Contact thermal resistance (1device) (*4) Rth(c-f) Inverter IGBT Inverter FWD Brake IGBT Converter Diode with Thermal Compound Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound. 2 Characteristics min. typ. max. 0.54 0.91 0.72 0.54 0.05 - Units °C/W 7MBR50VM120-50 IGBT Modules Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25oC / chip Tj= 150oC / chip 100 100 15V VGE=20V 12V Collector current: IC [A] Collector current: IC [A] VGE=20V 75 50 10V 25 15V 12V 75 50 10V 25 8V 8V 0 0 0 1 2 3 4 5 0 3 4 5 Collector-Emitter voltage: VCE[V] [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj= 25oC / chip Collector - Emitter voltage: VCE [V] 8 Tj=25°C Collector current: IC [A] 2 Collector-Emitter voltage: VCE[V] 100 Tj=150°C 75 Tj=125°C 50 25 0 6 4 Ic=100A Ic=50A Ic=25A 2 0 0 1 2 3 4 5 5 10 Collector current: IC [A] Collector - Emitter voltage: VCE [200V/div] Gate - Emitter voltage: VGE [5V/div] 10.0 Cies 1.0 Cres Coes 0.0 0 10 20 20 25 [ Inverter ] Dynamic gate charge (typ.) Vcc=600V, Ic=50A, Tj= 25°C VGE=0V, f= 1MHz, Tj= 25oC 0.1 15 Gate - Emitter voltage: VGE [V] [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) Capacitance: Cies, Coes, Cres [nF] 1 30 VGE VCE 0 Collector - Emitter voltage: VCE [V] 100 200 300 Gate charge: Qg [nC] 3 400 500 7MBR50VM120-50 IGBT Modules [ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=15Ω, Tj= 150°C 10000 1000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] [ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=15Ω, Tj= 125°C toff ton tr 100 tf 10 0 25 50 75 100 10000 1000 ton tf 10 125 0 Switching loss : Eon, Eoff, Err [mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 10000 50 75 100 Collector current: IC [A] toff ton tr 100 tf 10 100 10 Eon(150°C) Eon(125°C) Eoff(150°C) Eoff(125°C) 5 Err(150°C) Err(125°C) 0 0 25 50 75 100 125 [ Inverter ] Reverse bias safe operating area (max.) +VGE=15V,-VGE <= 15V, RG >= 15Ω ,Tj <= 125°C 10 125 Collector current: IC [A] Eon(150°C) Eon(125°C) 6 Eoff(150°C) Eoff(125°C) 4 Err(150°C) Err(125°C) 2 100 75 RBSOA (Repetitive pulse) 50 25 0 0 10 150 Collector current: IC [A] [ Inverter ] Switching loss vs. gate resistance (typ.) Vcc=600V, Ic=50A, VGE=±15V 8 125 15 Gate resistance : Rg [Ω] Switching loss : Eon, Eoff, Err [mJ/pulse ] 25 [ Inverter ] a Switching loss vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=15Ω [ Inverter ] Switching time vs. gate resistance (typ.) Vcc=600V, Ic=50A, VGE=±15V, Tj= 125°C 10 tr 100 Collector current: IC [A] 1000 toff 0 100 400 800 1200 Collector-Emitter voltage : VCE [V] Gate resistance : Rg [Ω] 4 7MBR50VM120-50 IGBT Modules [ Inverter ] Forward current vs. forward on voltage (typ.) chip Tj=25°C Forward current : IF [A] 60 50 40 Tj=150°C 30 Tj=125°C 20 10 0 0 1 2 1000 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] 70 [ Inverter ] Reverse recovery characteristics (typ.) Vcc=600V, VGE=±15V, Rg=15Ω 3 100 Irr(150°C) Irr(125°C) 10 5 4 trr(150°C) trr(125°C) 0 25 Forward on voltage : VF [V] 50 75 100 125 150 Forward current : IF [A] [ Converter ] Forward current vs. forward on voltage (typ.) chip Forward current : IF [A] 100 Tj=25°C Tj=125° C 75 50 25 0 0 1 2 3 4 Forward on voltage : VFM [V] [ Thermistor ] Temperature characteristic (typ.) 10.00 1.00 100 Resistance : R [kΩ] Thermal resistanse : Rth(j-c) [ °C/W ] Transient thermal resistance (max.) FWD[Inverter] IGBT[Brake] IGBT[Inverter] Conv. Diode 0.10 0.01 0.001 0.010 0.100 10 1 0.1 1.000 -60 Pulse width : Pw [sec] -40 -20 0 20 40 60 80 100 120 140 160 180 Temperature [°C ] 5 7MBR50VM120-50 IGBT Modules [ Brake ] Collector current vs. Collector-Emitter voltage (typ.) [ Brake ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25oC / chip 70 VGE=20V 15V Collector current: IC [A] 60 12V 50 40 10V 30 20 10 VGE=20V 50 12V 40 10V 30 20 8V 10 8V 0 0 0 2 1 3 4 5 0 1 Collector-Emitter voltage: VCE[V] 4 5 Tj= 25oC / chip 8 Tj=25°C Tj=150°C 60 Collector current: IC [A] 3 [ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Collector - Emitter voltage: VCE [V] 70 2 Collector-Emitter voltage: VCE[V] [ Brake ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 50 Tj=125°C 40 30 20 10 0 6 4 Ic=70A Ic=35A Ic=18A 2 0 0 1 2 3 4 5 5 10 Collector-Emitter voltage: VCE[V] Collector - Emitter voltage: VCE [200V/div] Gate - Emitter voltage: VGE [5V/div] 10.0 Cies 1.0 Cres Coes 0.0 0 10 20 20 25 [ Brake ] Dynamic gate charge (typ.) Vcc=600V, Ic=50A, Tj= 25°C VGE=0V, f= 1MHz, Tj= 25oC 0.1 15 Gate - Emitter voltage: VGE [V] [ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) Capacitance: Cies, Coes, Cres [nF] 15V 60 Collector current: IC [A] 70 Tj= 150oC / chip 30 VGE VCE 0 Collector - Emitter voltage: VCE [V] 100 200 Gate charge: Qg [nC] 6 300 400 7MBR50VM120-50 IGBT Modules Outline Drawings, mm ( shows theoretical dimension. ) shows reference dimension. Section A-A Equivalent Circuit Schematic [ Converter ] [ Brake] [ Inverter ] 7 [ Thermistor ] 7MBR50VM120-50 IGBT Modules WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device Technology Co., Ltd. is (or shall be deemed) granted. Fuji Electric Device Technology Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Device Technology Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Device Technology Co., Ltd. to obtain prior approval. 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