FUJI FMV19N60ES

FMV19N60ES
FUJI POWER MOSFET
Super FAP-E3S series
N-CHANNEL SILICON POWER MOSFET
Features
Outline Drawings [mm]
Maintains both low power loss and low noise
Lower RDS (on) characteristic
More controllable switching dv/dt by gate resistance
Smaller VGS ringing waveform during switching
Narrow band of the gate threshold voltage (4.2±0.5V)
High avalanche durability
Equivalent circuit schematic
TO-220F(SLS)
Drain(D)
Applications
Gate(G)
Source(S)
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)
Description
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Repetitive and Non-Repetitive Maximum AvalancheCurrent
Non-Repetitive Maximum Avalanche Energy
Repetitive Maximum Avalanche Energy
Peak Diode Recovery dV/dt
Peak Diode Recovery -di/dt
Symbol
VDS
VDSX
ID
I DP
VGS
I AR
E AS
E AR
dV/dt
-di/dt
Maximum Power Dissipation
PD
Drain-Source Voltage
Characteristics
600
600
±19
±76
±30
19
799
13
4.8
100
2.16
130
150
-55 to + 150
2
Tch
Tstg
VISO
Operating and Storage Temperature range
Isolation Voltage
Unit
V
V
A
A
V
A
mJ
mJ
kV/µs
A/µs
Remarks
VGS = -30V
Note*1
Note*2
Note*3
Note*4
Note*5
Ta=25°C
Tc=25°C
W
°C
°C
kVrms
t = 60sec, f = 60Hz
Electrical Characteristics at Tc=25°C (unless otherwise specified)
Description
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Symbol
BVDSS
VGS (th)
Zero Gate Voltage Drain Current
I DSS
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
I GSS
R DS (on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
Q GS
Q GD
Q SW
I AV
VSD
trr
Qrr
Turn-On Time
Turn-Off Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate-Drain Crossover Charge
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
Conditions
I D =250µA, VGS =0V
I D =250µA, VDS =VGS
VDS =600V, VGS =0V
VDS =480V, VGS =0V
VGS =±30V, VDS =0V
I D =9.5A, VGS =10V
I D =9.5A, VDS =25V
Tch =25°C
Tch =125°C
VDS =25V
VGS =0V
f=1MHz
Vcc =300V
VGS =10V
I D =9.5A
RG =15Ω
Vcc =300V
I D =19A
VGS =10V
L=1.71mH, Tch =25°C
I F =19A, VGS =0V, Tch =25°C
I F =19A, VGS =0V
-di/dt=100A/µs, Tch=25°C
min.
600
3.7
8
19
-
typ.
4.2
10
0.31
16
2700
300
17
45
35
122
20
74
23
25
9
0.90
0.6
10
max.
4.7
25
250
100
0.365
4050
450
26
68
53
183
30
111
34.5
38
14
1.35
-
Unit
V
V
min.
typ.
max.
0.960
58.0
Unit
°C/W
°C/W
µA
nA
Ω
S
pF
ns
nC
A
V
µS
µC
Thermal Characteristics
Description
Thermal resistance
Symbol
Rth (ch-c)
Rth (ch-a)
Note *1 : Tch≤150°C
Note *2 : Stating Tch=25°C, IAS =8A, L=22.9mH, Vcc=60V, RG =50Ω
E AS limited by maximum channel temperature and avalanche current.
See to 'Avalanche Energy' graph.
Test Conditions
Channel to case
Channel to ambient
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
See to the 'Transient Themal impeadance' graph.
Note *4 : I F ≤-I D, -di/dt=100A/µs, Vcc≤BVDSS, Tch≤150°C.
Note *5 : I F ≤-I D, dv/dt≤4.8kV/µs, Vcc≤BVDSS, Tch≤150°C.
1
FMV19N60ES
140
FUJI POWER MOSFET
Allowable Power Dissipation
PD=f(Tc)
2
Safe Operating Area
ID=f(VDS):Duty=0(Single pulse),Tc=25 °c
10
t=
1µs
120
10µs
1
10
100
100µs
0
ID [A]
PD [W]
80
60
40
10
1ms
Power loss waveform :
Square waveform
-1
10
PD
20
t
0
-2
0
25
50
75
100
125
10
150
0
1
10
10
Tc [°C]
Typical Output Characteristics
ID=f(VDS):80 µs pulse test,Tch=25 °C
100
50
2
3
10
VDS [V]
10
Typical Transfer Characteristic
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C
10V
8.0V
7.5V
40
10
30
20
ID[A]
ID [A]
7.0V
1
6.5V
10
VGS=6.0V
0.1
0
0
100
4
8
12
VDS [V]
16
20
0
24
Typical Transconductance
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C
0.50
2
4
6
VGS[V]
8
10
12
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 µs pulse test,Tch=25 °C
VGS=6.0V
6.5V
7V
0.45
8V
10V
20V
gfs [S]
RDS(on) [ Ω ]
10
0.40
0.35
1
0.30
0.25
0.1
0.1
1
ID [A]
10
0
100
5
10
15
20
ID [A]
2
25
30
35
40
FMV19N60ES
1.0
FUJI POWER MOSFET
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=9.5A,VGS=10V
8
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250µA
7
0.8
VGS(th) [V]
6
RDS(on) [ Ω ]
0.6
max.
0.4
typ.
5
max.
4
typ.
3
min.
2
0.2
1
0
0.0
-50
-25
0
25
50
Tch [°C]
75
100
125
-50
150
Typical Gate Charge Characteristics
VGS=f(Qg):ID=19A,Tch=25 °C
-25
0
25
50
75
Tch [°C]
100
125
150
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
14
12
4
10
Vcc= 120V
300V
480V
10
Ciss
3
10
C [pF]
VGS [V]
8
2
6
10
Coss
4
1
10
Crss
2
0
0
10
0
20
40
60
80
100
120
-2
10
-1
0
10
10
2
10
VDS [V]
Qg [nC]
100
1
10
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=15 Ω
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 µs pulse test,Tch=25 °C
3
10
td(off)
10
2
10
tf
t [ns]
IF [A]
td(on)
tr
1
0.1
0.00
1
10
0
0.25
0.50
0.75
1.00
1.25
1.50
1.75
10
2.00
-1
10
VSD [V]
0
1
10
10
ID [A]
3
2
10
FMV19N60ES
FUJI POWER MOSFET
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=60V,I(AV)<=19A
10
IAS=19A
800
700
0
Zth(ch-c) [°C/W]
10
600
IAS=12A
500
EAV [mJ]
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
1
400
IAS=8A
-1
10
-2
10
300
D=0
200
-3
10
10
100
-6
-5
10
-4
10
-3
10
t [sec]
0
0
25
50
75
100
125
150
starting Tch [°C]
4
-2
10
-1
10
0
10
FMV19N60ES
FUJI POWER MOSFET
WARNING
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this
Catalog, be sure to obtain the latest specifications.
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warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which
may arise from the use of the applications described herein.
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5
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