SRA2201E Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process High packing density Ordering Information Type NO. SRA2201E Marking Package Code 1R SOT-523 Outline Dimensions unit : mm • Equivalent Circuit 1.60±0.1. C(OUT) 1 3 2 R1 B(IN) 0.2~0.3 1.00 BSC 1.60±0.1 0.80±0.1. R2 E(COMMON) 0.1 Min. 0.70±0.1 0~0.1 0.15 Min. PIN Connections 1. Base 2. Emitter 3. Collector KSR-4025-000 R1 R2 Ω 4.7KΩ Ω 4.7KΩ 1 SRA2201E (Ta=25°°C) Absolute maximum ratings Characteristic Symbol Ratings Unit Out Voltage VO -50 V Input Voltage VI -20 V Out Current IO -100 mA Power Dissipation PD 150 mW Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ 150 °C (Ta=25°°C) Electrical Characteristics Characteristic Output Cut-off Current DC Current Gain Symbol IO(OFF) GI Test Condition VO=-50V, VI=0 VO=-5V, IO=-10mA Min. Typ. Max. Unit - - -500 nA 30 55 - - Output Voltage VO(ON) IO=-10mA, II=-0.5mA - -0.1 -0.3 V Input Voltage (ON) VI(ON) VO=-0.2V, IO=-5mA - -1.5 -2.0 V Input Voltage (OFF) VI(OFF) VO=-5V, IO=-0.1mA -1.0 -1.2 - V VO=-10V, IO=-5mA - 200 - MHz VI=-5V - - -1.8 mA * Transition Frequency fT Input Current II * : Characteristic of Transistor Only KSR-4025-000 2 SRA2201E Electrical Characteristic Curves Fig. 1 IO - VI(ON) Fig. 2 IO - VI(OFF) Fig. 3 GI - IO KSR-4025-000 3