GULFSEMI BYV26E

BYV26E
SINTERED GLASS JUNCTION
FAST AVALANCHE RECTIFIER
VOLTAGE:
:1000V
CURRENT: 1.0A
FEATURE
SOD-57
Glass passivated
High maximum operating temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy absorption capability
MECHANICAL DATA
Case: SOD-57 sintered glass case
Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
Polarity: color band denotes cathode end
Mounting position: any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)
SYMBOL
BYV26E
VRRM
VRMS
VDC
1000
V
700
V
1000
V
Reverse avalanche breakdown voltage
at IR = 0.1 mA
V(BR)R
1100min
V
Maximum Average Forward Rectified
Current 3/8”lead length at Ttp =85°C
Non-repetitive Peak Forward Current at t=10ms half
sine wave
Maximum Forward Voltage at rated Forward Current
Non-repetitive peak reverse avalanche energy
(Note 1)
IFAV
1.0
A
IFSM
30
A
VF
2.5
V
ERSM
10
mJ
IR
5.0
150.0
µA
µA
75
nS
40
pF
100
°C /W
°C
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Maximum DC Reverse Current
at rated DC blocking voltage
Maximum Reverse Recovery Time
Ta =25°C
Ta =165°C
(Note 2)
Diode Capacitance
(Note 3)
Typical Thermal Resistance
(Note 4)
Storage and Operating Junction Temperature
Trr
Cd
Rth(ja)
Tstg, Tj
-65 to +175
units
Note:
1. IR=400mA; Tj=Tjmax prior to surge; inductive load switched off
2. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A
3. Measured at 1.0 MHz and applied reverse voltage of 0Vdc
4. Device mounted on an epoxy-glass printed-circuit board, 1.5mm thick
Rev.A1
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RATINGS AND CHARACTERISTIC CURVES BYV26E
Rev.A1
www.gulfsemi.com