IMAGE SENSOR CMOS linear image sensor S10227 Small plastic package CMOS image sensor Features Applications l Compact and high cost-performance Surface mount package: 4.4 × 9.1 × 1.6 t mm l Pixel pitch: 12.5 µm Pixel height: 250 µm l Number of pixels: 512 ch l Single 5 V power supply operation available l Video data rate: 5 MHz max. l Simultaneous charge integration l Shutter function l High sensitivity, low dark current, low noise l Built-in timing generator allows operation with only Start and Clock pulse inputs l Spectral response range: 400 to 1000 nm l Barcode readers l Displacement meters l Refractometers l Interferometers l Miniature spectrometers Note: Consult with the nearest sales office if an evaluation board is needed. ■ Absolute maximum ratings (Ta=25 °C) Parameter Supply voltage Clock pulse voltage Start pulse voltage Operating temperature*1 Storage temperature*1 *1: No condensation Symbol Vdd V(clk) V(st) Topr Tstg Value -0.3 to +6 -0.3 to +6 -0.3 to +6 -25 to +85 -25 to +85 Unit V V V °C °C ■ Dimensions Parameter Number of pixels Pixel pitch Pixel height Active area length Value 512 12.5 250 6.4 Unit µm µm mm 1 CMOS linear image sensor S10227 ■ Recommended terminal voltage Parameter Supply voltage Symbol Vdd High Low High Low Clock pulse voltage Start pulse voltage V(clk) V(st) Min. 4.75 Vdd - 0.25 Vdd - 0.25 - Typ. 5 Vdd 0 Vdd 0 Max. 5.25 Vdd + 0.25 Vdd + 0.25 - Unit V V V V V Typ. f(clk) 150 (1.6) Max. 5 - Unit MHz MHz mW µV/e ■ Electrical characteristics [Ta=25 °C, Vdd=5 V, V(clk)=V(st)=5 V] Parameter Clock pulse frequency Video data rate Power consumption Conversion efficiency Symbol f(clk) VR P CE Min. 0.1 - ■ Electrical and optical characteristics [Ta=25 °C, Vdd=5 V, V(clk)=V(st)=5 V] Parameter Symbol Min. Typ. Max. Unit λ Spectral response range 400 to 1000 nm λp Peak sensitivity wavelength 700 nm Dark output voltage*2 Vd 0.5 5 mV Saturation output voltage Vsat 4.2 V Readout noise Nr 0.4 mV rms Offset output voltage Vo 0.6 V Photo response non-uniformity*3 *4 PRNU ±8.5 % *2: Storage time Ts=10 ms *3: Uniformity is defined under the condition that all pixels in the device are uniformly illuminated by light which is 50% of the saturation exposure level and using 510 pixels excluding both ends pixels as follows: PRNU= ∆X/X × 100 (%) X: Average output of 510 pixels excluding the pixels at both ends ∆X: Difference between X and maximum or minimum output *4: Measured with a tungsten lamp of 2856 K ■ Spectral response (typical example) ■ Block diagram (Ta=25 ˚C) 100 clk st GND Vdd 8 7 1 4 Relative sensitivity (%) 80 Timing generator 60 Shift register 6 EOS Hold circuit 5 Video Charge amp array 40 1 2 3 4 Photodiode array 511 512 20 0 400 KMPDC0167EA 500 600 700 800 900 1000 1100 1200 Wavelength (nm) KMPDB0258EC 2 CMOS linear image sensor S10227 ■ Timing chart tpw(clk), T1 1 2 3 4 Trig 13 1415 clk Integration time 2.5 clocks 8.5 clocks tlw(st) st thw(st) tpw(st) 512 15 clocks Video EOS tf(clk) tr(clk) clk clk tpw(clk) st Video tf(st) tvd1 tr(st) tlw(st) tvd2 thw(st) tpw(st) KMPDC0166EB Parameter Symbol Min. Start pulse width tpw(st) T1 × 530 Start pulse high width thw(st) T1 × 8 Start pulse low width tlw(st) T1 × 15 Start pulse rise and fall time tr(st), tf(st) 0 Clock pulse width tpw(clk), T1 200 Clock pulse rise and fall time tr(clk), tf(clk) 0 Video delay time 1 tvd1 Video delay time 2 tvd2 Note: The internal circuit starts operating at the rise of clk pulse immediately after st The integration time equals the high period of st pulse plus 6 clk cycles. Typ. 20 20 30 40 pulse sets to low. Max. 30 30 - Unit ns ns ns ns ns ns ns ns ■ Dimensional outlines (unit: mm) 9.1 Active area (6.4 × 0.25) Print circuit board 2.54 2.54 2.54 2.54 Electrodes (8 ×) 0.5 Index mark 1.6 ± 0.2 Photosensitive surface Epoxy resin 0.3 ± 0.15 512 ch (0.9) 1 ch 1.437 ± 0.2 4.4 4.55 ± 0.2 GND NC NC VDD Video EOS st clk Tolerance unless otherwise noted: ±0.1 Values in parentheses indicate reference value. KMPDA0213EB 3 CMOS linear image sensor S10227 ■ Pin connection Pin no. ➀ ➁ ➂ ➃ ➄ Name GND NC NC Vdd Video ➅ EOS ➆ st ➇ clk Description Ground Power supply voltage Video signal output End of scan (Shift register end-of-scan signal pulse generated after reading signals from all pixels) Start pulse (Pulse for initializing the internally generated pulses that set the timing to start reading pixel signals) Clock pulse (Pulse for synchronizing the internally generated pulses that control sensor operation frequency) ■ Recommended land pattern (8 ×) Input/output Input Input Output Output Input Input ■ Temperature profile of reflow soldering 250 0.7 2.54 2.54 Temperature (˚C) 2.54 200 2.54 KMPDC0257EA 150 100 50 0 0 50 100 150 200 250 300 350 Time (s) KMPDB0261EA ■ Precautions for use (1) Electrostatic countermeasures · This device has a built-in protection circuit as a safeguard against static electrical charges. However, to prevent destroying the device with electrostatic charges, take countermeasures such as grounding yourself, the workbench and tools to prevent static discharges. · Protect this device from surge voltages which might be caused by peripheral equipment. (2) Package handling · The package surface is easily scratched, so handle this device carefully. · Dust or grime on the light input window might cause non-uniform sensitivity. To remove dust or grime, blow it off with compressed air. (3) Reflow soldering · To prevent damaging this device during reflow soldering, perform soldering within 24 hours after opening the moisture-proof packing. · The extent of damage that might occur during reflow soldering depends on the PC board size and reflow oven conditions. Check the device for any damage before reflow soldering. (4) Surface protective tape · Protective tape is affixed to the surface of this product to protect the active area. After assembling the product, remove the tape before use. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. Type numbers of products listed inthe specification sheets or supplied as samples may have a suffix "(X)" which means tentative specifications or a suffix "(Z)" which means developmental specifications. ©2010 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KMPD1099E05 4 Jun. 2010 DN