CCD linear image sensors S11155-2048 S11156-2048 Back-thinned CCD image sensors with electronic shutter function The S11155-2048 and S11156-2048 are back-thinned CCD linear image sensors with an internal electronic shutter for spectrometers. These image sensors use a resistive gate structure that allows high-speed transfer. Each pixel has a lengthwise size needed by spectrometers but ensures readout with low image lag. Features Applications Built-in electronic shutter Spectrometers Minimum integration time: 30 μs Image readout High sensitivity from the ultraviolet region (spectral response range: 200 to 1100 nm) Readout speed: 10 MHz max. Image lag: 0.1% typ. General ratings Parameter Pixel size Number of total pixels Number of active pixels Active area Horizontal clock phase Output circuit Package Window*1 S11155-2048 14 (H) × 500 (V) μm S11156-2048 14 (H) × 1000 (V) μm 2068 (H) × 1 (V) 2048 (H) × 1 (V) 28.672 (H) × 0.500 (V) mm 28.672 (H) × 1.000 (V) mm 2-phase Two-stage MOSFET source follower 24-pin ceramic DIP (refer to dimensional outline) Quartz glass *1: Temporary window type (ex. S11155-2048N) is available upon request. Resistive gate structure In ordinary CCDs, one pixel contains multiple electrodes and a signal charge is transferred by applying different clock pulses to those electrodes [Figure 1]. In resistive gate structures, a single high-resistance electrode is formed in the active area, and a signal charge is transferred by means of a potential slope that is created by applying different voltages across the electrode [Figure 2]. Compared to a CCD area image sensor which is used as a linear sensor by line binning, a one-dimensional CCD having a resistive gate structure in the active area offers higher speed transfer, allowing readout with low image lag even if the pixel height is large. [Figure 1] Schematic diagram and potential of ordinary 2-phase CCD P1V P2V P1V [Figure 2] Schematic diagram and potential of resistive gate structure P2V REGL REGH STG TG Resistive gate N- N N- N- N N N- N P+ P N- N N P Potential slope KMPDC0320EA www.hamamatsu.com KMPDC0321EB 1 CCD linear image sensors S11155-2048, S11156-2048 Absolute maximum ratings (Ta=25 °C) Parameter Operating temperature*2 *3 Storage temperature OD voltage RD voltage Vret voltage ARD voltage ISH voltage ARG voltage STG voltage IGH voltage SG voltage OG voltage R G voltage TG voltage Resistive gate voltage Symbol Topr Tstg VOD VRD Vret VARD VISH VARG VSTG VIG1H, VIG2H VSG VOG VRG VTG VREGH VREGL VP1H, VP2H High Low Horizontal clock voltage Min. -50 -50 -0.5 -0.5 -0.5 -0.5 -0.5 -10 -10 -10 -10 -10 -10 -10 Typ. - Max. +50 +70 +25 +18 +18 +18 +18 +15 +15 +15 +15 +15 +15 +15 Unit °C °C V V V V V V V V V V V V -10 - +15 V -10 - +15 V *2: Chip temperature *3: The chip temperature may increase due to heating in high-speed operation. We recommend taking measures to dissipate heat as needed. For more details, refer to the technical information. Operating conditions (Ta=25 °C) Parameter Output transistor drain voltage Reset drain voltage All reset drain voltage All reset gate voltage High*4 Low*5 Output gate voltage Storage gate voltage Substrate voltage Resistive gate high voltage Resistive gate low voltage High Low High Low Output amplifier return voltage Horizontal input source Test point Horizontal input gate High Horizontal shift register clock voltage Low High Summing gate voltage Low High Reset gate voltage Low High Transfer gate voltage Low External load resistance Symbol VOD VRD VARD VARGH VARGL VOG VSTG VSS VREGHH VREGHL VREGLH VREGLL Vret VISH VIG1H, VIG2H VP1HH, VP2HH VP1HL, VP2HL VSGH VSGL VRGH VRGL VTGH VTGL RL Min. 12 14 11 7 -2 4.5 -3.5 -9 -9 -9 5 -6 5 -6 7 -6 8.5 -7.5 2.0 Typ. 15 15 12 8 -1.5 5 0 0 -3 -8 VREGHH - 2.5 -8 1 VRD -8 6 -5 6 -5 8 -5 9 -7 2.2 Max. 18 16 13 9 -1 5.5 -2.5 -7 -7 2 7 -4 7 -4 9 -4 9.5 -6.5 2.4 Unit V V V V V V V V V V V V V V V V kΩ *4: All reset on *5: All reset off 2 CCD linear image sensors S11155-2048, S11156-2048 Electrical characteristics (Ta=25 °C) Parameter Signal output frequency Line rate Horizontal shift register capacitance All reset gate capacitance S11155-2048 Resistive gate capacitance S11156-2048 Summing gate capacitance Reset gate capacitance Transfer gate capacitance Charge transfer efficiency*6 DC output level Output impedance Output amplifier return current S11155-2048 Power consumption S11156-2048 Resistive gate resistance*9 *6: *7: *8: *9: S11155-2048 S11156-2048 Symbol fc LR CP1H, CP2H CARG Min. 0.99995 7 1.4 0.7 0.5 1 CREG CSG CRG CTG CTE Vout Zo Iret PAMP*7 PREG*8 PAMP*7 PREG*8 RREG Typ. 5 2 200 100 1000 2000 10 10 100 0.99999 8 300 0.4 75 2.5 75 1.3 2.5 5 Max. 10 4 9 12.5 6.3 4.5 9 Unit MHz kHz pF pF pF pF pF pF V Ω mA mW kΩ Charge transfer efficiency per pixel of CCD shift register, measured at half of the full well capacity Power consumption of the on-chip amplifier plus load resistance Power consumption at REG Resistance value between REGH and REGL Electrical and optical characteristics (Ta=25 °C, unless otherwise noted) Parameter Symbol Saturation output voltage Full well capacity CCD node sensitivity Dark current*10 Nr DR Min. 7 - λ - PRNU L - Vsat Fw Sv Non-MPP operation MPP operation Readout noise*11 Dynamic range*12 Spectral response range Photo response non-uniformity* Image lag*13 13, 14 * DS S11155-2048 Typ. Max. Fw × Sv 200 8 9 50 300 4 16 30 45 6670 200 to 1100 ±3 ±10 0.1 1 Min. 7 - S11156-2048 Typ. Max. Fw × Sv 200 8 9 100 600 8 32 30 45 6670 200 to 1100 ±3 ±10 0.1 1 Unit V keμV/eke-/pixel/s e- rms nm % % Dark current is reduced to half for every 5 to 7 °C decrease in temperature. Readout frequency is 2 MHz Dynamic range (DR) = Full well capacity / Readout noise Measured at one-half of the saturation output (full well capacity) using LED light (peak emission wavelength: 660 nm) Fixed pattern noise (peak to peak) × 100 [%] *14: Photo response non-uniformity = Signal *10: *11: *12: *13: 3 CCD linear image sensors S11155-2048, S11156-2048 Spectral transmittance characteristic of window material Spectral response (without window)*15 (Typ. Ta=25 °C) 100 (Typ. Ta=25 °C) 100 90 80 70 Transmittance (%) Quantum efficiency (%) 80 60 40 60 50 40 30 20 20 10 0 200 400 600 800 1000 0 100 200 300 400 500 600 700 800 900 100011001200 1200 Wavelength (nm) Wavelength (nm) KMPDB0316EA KMPDB0303EA *15: Spectral response with quartz glass is decreased according to the spectral transmittance characteristic of window material. Window material Type No. S11155-2048 S11156-2048 Window material Quartz glass*16 (option: window-less) *16: Resin sealing Device structure (conceptual drawing of top view in dimensional outline) Thinning 22 21 20 19 S2045 S2046 S2047 S2048 Thinning 23 Resistive gate D5 D6 D7 D8 D9 D10 S1 S2 S3 S4 18 17 16 D11 D12 D13 D14 D15 D16 Storage section 24 CCD horizontal shift register D1 D2 D3 D4 D17 D18 D19 D20 15 14 13 1 2 3 4 5 6 7 8 9 10 11 12 KMPDC0339EB 4 CCD linear image sensors S11155-2048, S11156-2048 Timing chart Non-MPP operation 1 line output period Tinteg (electronic shutter: open) Tpwar (electronic shutter: closed) ARG REGH, REGL (REGH: -3 V, REGL: -5.5 V) Tpwv Tovr TG Tpwh, Tpws 2 1 P1H 3..2067 2068 P2H SG Tpwr RG OS D1 D2 D19 D20 D3..D10, S1...S2048, D11..D18 KMPDC0340EB ARG TG P1H, P2H*17 SG RG TG - P1H Parameter Pulse width Rise and fall times Pulse width Rise and fall time Pulse width Rise and fall time Duty ratio Pulse width Rise and fall time Duty ratio Pulse width Rise and fall time Overlap time Integration time Symbol Tpwar Tprar, Tpfar Tpwv Tprv, Tpfv Tpwh Tprh, Tpfh Tpws Tprs, Tpfs Tpwr Tprr, Tpfr Tovr Tinteg Min. 1 200 30 20 50 10 40 50 10 40 5 5 1 30 Typ. 100 50 100 50 15 2 - Max. 60 60 - Unit μs ns μs ns ns ns % ns ns % ns ns μs μs *17: Symmetrical clock pulses should be overlapped at 50% of maximum amplitude. 5 CCD linear image sensors S11155-2048, S11156-2048 Timing chart MPP operation 1 line output period Tinteg (electronic shutter: open) Tpwar (electronic shutter: closed) ARG (REGH=-3 V, REGL=-5.5 V) Tpwreg (REGH, REGL=-8 V) REGH, REGL Tpwv Tovr TG Tpwh, Tpws P1H 2 1 3..2067 2068 2069 2070... ? P2H SG Tpwr RG OS D2 D19 D20 D1 D3..D10, S1...S2048, D11..D18 Normal readout period Dummy readout period KMPDC0347EC Parameter Symbol Pulse width Tpwar ARG Rise and fall times Tprar, Tpfar Pulse width Tpwreg REGH, REGL Rise and fall times Tprreg, Tpfreg Pulse width Tpwv TG Rise and fall times Tprv, Tpfv Pulse width Tpwh Rise and fall times Tprh, Tpfh P1H, P2H*19 Duty ratio Pulse width Tpws SG Rise and fall times Tprs, Tpfs Duty ratio Pulse width Tpwr RG Rise and fall times Tprr, Tpfr TG - P1H Overlap time Tovr Integration time Tinteg *18: The Min. value of Tpwar is equal to the normal readout period. *19: Symmetrical clock pulses should be overlapped at 50% of maximum amplitude. Min. *18 200 100 30 20 50 10 40 50 10 40 5 5 1 30 Typ. Tinteg - Tpwv 100 50 100 50 15 2 - Max. 60 60 - Unit μs ns μs ns μs ns ns ns % ns ns % ns ns μs μs 6 CCD linear image sensors S11155-2048, S11156-2048 Dimensional outline (unit: mm) 3.3 ± 0.35 Active area 28.672 10.03 ± 0.3 A 10.41 ± 0.25 13 24 0.25-0.03 +0.05 12 1 Index mark 27.94 ± 0.3 Index mark 1.47 Photosensitive surface S11155-2048: A=0.500 S11156-2048: A=1.000 0.46 ± 0.05 1.72 ± 0.17 3.0 ± 0.5 1.27 ± 0.25 38.10 ± 0.4 2.54 ± 0.13 1.27 ± 0.2 KMPDA0262EB Pin connections Pin no. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Symbol OS OD OG SG Vret RD REGL REGH P2H P1H IG2H IG1H ARG ARD ISH SS RD STG TG RG Function Output transistor source Output transistor drain Output gate Summing gate Output amplifier return Reset drain Resistive gate (low) Resistive gate (high) CCD horizontal register clock-2 CCD horizontal register clock-1 Test point (horizontal input gate-2) Test point (horizontal input gate-1) All reset gate All reset drain Test point (horizontal input source) Remark (standard operation) RL=2.2 kΩ +15 V +5 V Same pulse as P2H +1 V +15 V -5.5 V (Non-MPP operation) -3 V (Non-MPP operation) Substrate Reset drain GND +15 V Storage gate 0V -8 V -8 V +12 V Connect to RD Transfer gate Reset gate 7 CCD linear image sensors S11155-2048, S11156-2048 Related information http://jp.hamamatsu.com/sp/ssd/CCD_e.html O Characteristics and use of resistive gate type CCD linear image sensors with electronic shutter Driver circuits for CCD linear image sensor (S11155-2048, S11156-2048) C11165 [sold separately] The C11165 is a driver circuit designed for HAMAMATSU CCD linear image sensors S11155-2048, S11156-2048. The C11165 can be used in spectrometer when combined with the CCD linear image sensor. Features Built-in 16-bit A/D converter Interface of computer: USB 2.0 Operates by DC+5 V Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. Type numbers of products listed in the specification sheets or supplied as samples may have a suffix “(X)” which means tentative specifications or a suffix “(Z)” which means developmental specifications. ©2010 Hamamatsu Photonics K.K. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KMPD1118E03 May 2010 DN 8