HAMAMATSU S11510

IR-enhanced CCD image sensors
S11510 series
Enhanced near infrared sensitivity: QE=40% (λ=1000 nm)
The S11510 series is a family of FFT-CCD image sensors for photometric applications that offer improved sensitivity in the
near infrared region at wavelengths longer than 800 nm. Our unique technology in laser processing was used to form a
MEMS structure on the back side of the CCD. This allows the S11510 series to have much higher sensitivity than our previous products (S10420-01 series).
In addition to having high infrared sensitivity, the S11510 series can be used as an image sensor with a long active area in
the direction of the sensor height by binning operation, making it suitable for detectors in Raman spectroscopy. Binning operation also ensures even higher S/N and signal processing speed compared to methods that use an external circuit to add
signals digitally.
The S11510 series has a pixel size of 14 × 14 μm and is available in two image areas of 14.336 (H) × 0.896 (V) mm (1024
× 64 pixels) and 28.672 (H) × 0.896 (V) mm (2048 × 64 pixels). The S11510 series is pin compatible with the S10420-01
series, and so operates under the same drive conditions.
Features
Applications
Enhanced near infrared sensitivity: QE=40% (λ=1000 nm)
High CCD node sensitivity: 6.5 μV/e-
Raman spectrometers, etc.
High full well capacity and wide dynamic range
(with anti-blooming function)
Pixel size: 14 × 14 μm
MPP operation
Spectral response (without window)*1
(Typ. Ta=25 °C)
100
90
S11510 series
Quantum efficiency (%)
80
70
60
Conventional type
(S10420-01 series)
50
40
30
20
Front-illuminated CCD
10
0
200
400
600
800
1000
1200
Wavelength (nm)
KMPDB0324EC
*1: Spectral response with quartz glass is decreased according to
the spectral transmittance characteristic of window material.
www.hamamatsu.com
1
CCD image sensors
S11510 series
Selection guide
Type no.
S11510-1006
S11510-1106
Number of
total pixels
Number of active
pixels
Active area
[mm (H) × mm (V)]
Readout speed
max.
(MHz)
Applicable
driver circuit
1044 × 70
2068 × 70
1024 × 64
2048 × 64
14.336 × 0.896
28.672 × 0.896
0.5
C11287
General ratings
Parameter
Pixel size
Vertical clock phase
Horizontal clock phase
Output circuit
Package
Window
Specification
14 (H) × 14 (V) μm
2-phase
4-phase
One-stage MOSFET source follower
24-pin ceramic DIP (refer to dimensional outline)
Quartz glass
Absolute maximum ratings (Ta=25 °C)
Parameter
Operating temperature*2
Storage temperature
Output transistor drain voltage
Reset drain voltage
Over flow drain voltage
Vertical input source voltage
Horizontal input source voltage
Over flow gate voltage
Vertical input gate voltage
Horizontal input gate voltage
Summing gate voltage
Output gate voltage
Reset gate voltage
Transfer gate voltage
Vertical shift register clock voltage
Horizontal shift register clock voltage
Symbol
Topr
Tstg
VOD
VRD
VOFD
VISV
VISH
VOFG
VIG1V, VIG2V
VIG1H, VIG2H
VSG
VOG
VRG
VTG
VP1V, VP2V
VP1H, VP2H
VP3H, VP4H
Min.
-50
-50
-0.5
-0.5
-0.5
-0.5
-0.5
-10
-10
-10
-10
-10
-10
-10
-10
Typ.
-
Max.
+50
+70
+30
+18
+18
+18
+18
+15
+15
+15
+15
+15
+15
+15
+15
Unit
°C
°C
V
V
V
V
V
V
V
V
V
V
V
V
V
-10
-
+15
V
*2: Package temperature
2
CCD image sensors
S11510 series
Operating conditions (MPP mode, Ta=25 °C)
Parameter
Output transistor drain voltage
Reset drain voltage
Over flow drain voltage
Over flow gate voltage
Output gate voltage
Substrate voltage
Input source
Vertical input gate
Test point
Horizontal input gate
Vertical shift register clock voltage
High
Low
High
Horizontal shift register clock voltage
Low
Summing gate voltage
Reset gate voltage
Transfer gate voltage
High
Low
High
Low
High
Low
External load resistance
Symbol
VOD
VRD
VOFD
VOFG
VOG
VSS
VISV, VISH
VIG1V, VIG2V
VIG1H, VIG2H
VP1VH, VP2VH
VP1VL, VP2VL
VP1HH, VP2HH
VP3HH, VP4HH
VP1HL, VP2HL
VP3HL, VP4HL
VSGH
VSGL
VRGH
VRGL
VTGH
VTGL
RL
Min.
23
11
11
0
4
-9
-9
4
-9
Typ.
24
12
12
12
5
0
VRD
-8
-8
6
-8
Max.
25
13
13
13
6
8
-7
4
6
8
-6
-5
-4
4
-6
4
-6
4
-9
90
6
-5
6
-5
6
-8
100
8
-4
8
-4
8
-7
110
Unit
V
V
V
V
V
V
V
V
V
V
V
V
V
V
kΩ
Electrical characteristics (Ta=25 °C)
Parameter
Signal output frequency
-1006
Vertical shift register
capacitance
-1106
-1006
Horizontal shift register
capacitance
-1106
Summing gate capacitance
Reset gate capacitance
-1006
Transfer gate capacitance
-1106
Charge transfer efficiency*3
DC output level
Output impedance
Power consumption*4
Symbol
fc
CP1V, CP2V
CP1H, CP2H
CP3H, CP4H
CSG
CRG
CTG
CTE
Vout
Zo
P
Min.
0.99995
17
-
Typ.
0.25
600
1200
80
160
10
10
30
60
0.99999
18
10
4
Max.
0.5
19
-
Unit
MHz
pF
pF
pF
pF
pF
V
kΩ
mW
*3: Charge transfer efficiency per pixel, measured at half of the full well capacity
*4: Power consumption of the on-chip amplifier plus load resistance
3
CCD image sensors
S11510 series
Electrical and optical characteristics (Ta=25 °C, unless otherwise noted)
Parameter
Saturation output voltage
Vertical
Full well capacity
Horizontal
CCD node sensitivity
Dark current*5
Readout noise*6
Dynamic range*7
Line binning
Spectral response range
Photo response non-uniformity*8
*5:
*6:
*7:
*8:
Symbol
Vsat
Min.
50
250
5.5
41700
-
Fw
Sv
DS
Nr
DR
λ
PRNU
Typ.
Fw × Sv
60
300
6.5
50
6
50000
200 to 1100
±3
Max.
7.5
200
15
±10
Unit
V
keμV/ee-/pixel/s
e- rms
nm
%
Dark current nearly doubles for every 5 to 7 °C increase in temperature.
Temperature: -40 °C, readout frequency: 20 kHz
Dynamic range (DR) = Full well capacity / Readout noise
Measured at one-half of the saturation output (full well capacity) using LED light (peak emission wavelength: 660 nm)
Fixed pattern noise (peak to peak)
Photo response non-uniformity =
× 100 [%]
Signal
Spectral transmittance characteristic of window material
Dark current vs. temperature
(Typ.)
100
(Typ. Ta=25 °C)
100
90
Transmittance (%)
Dark current (e-/pixel/s)
80
10
1
70
60
50
40
30
0.1
20
10
0.01
-50
-40
-30
-20
-10
0
10
20
30
Temperature (°C)
0
100 200 300 400 500 600 700 800 900 100011001200
Wavelength (nm)
KMPDB0304EA
KMPDB0303EA
Window material
Type no.
S11510 series
Window material
Quartz glass*9
*9: Resin sealing
4
CCD image sensors
S11510 series
Device structure (conceptual drawing of top view in dimensional outline)
Thinning
22
21
20
19
18
17
16
2-bevel
23
2n signal output
Thinning
64
15
5
4
3
2
1 2 3 4 5
13
4-bevel
24
14
1024
1
V=64
H=1024, 2048
2
3
4 blank pixels
6-bevel
4
5
6
n
7
8
2 signal output
9
10
11
12
4 blank pixels
6-bevel
KMPDC0365EA
5
CCD image sensors
S11510 series
Timing chart (line binning)
Integration time
(shutter has to be open)
Vertical binning period
(shutter has to be closed)
Tpwv
P1V
1
2
Readout period
(shutter has to be closed)
3...69 70←64 + 6 (bevel)
Tovr
P2V, TG
Tpwh, Tpws Tovrh
P1H
1
2
3
4...1043 1044: S11510-1006
4...2067 2068: S11510-1106
P2H
P3H
P4H, SG
Tpwr
RG
OS
D1
D2
D19
D20
D3...D10, S1...S1024, D11...D20: S11510-1006
S1...S2048
: S11510-1106
KMPDC0355EA
Parameter
Pulse width*10
P1V, P2V, TG
Rise and fall time*10
Pulse width*10
Rise and fall time*10
P1H, P2H, P3H, P4H
Pulse overlap time
Duty ratio*10
Pulse width*10
Rise and fall time*10
SG
Pulse overlap time
Duty ratio*10
Pulse width
RG
Rise and fall time
TG-P1H
Overlap time
Symbol
Tpwv
Tprv, Tpfv
Tpwh
Tprh, Tpfh
Tovrh
Tpws
Tprs, Tpfs
Tovrh
Tpwr
Tprr, Tpfr
Tovr
Min.
6
20
1000
10
500
40
1000
10
500
40
100
5
1
Typ.
8
2000
1000
50
2000
1000
50
1000
2
Max.
60
60
-
Unit
μs
ns
ns
ns
ns
%
ns
ns
ns
%
ns
ns
μs
*10: Symmetrical clock pulses should be overlapped at 50% of maximum amplitude.
6
CCD image sensors
S11510 series
Dimensional outline (unit: mm)
3.3 ± 0.35
A
B
10.03 ± 0.3
13
+0.05
12
0.25-0.03
1
Index mark
10.41 ± 0.25
24
27.94 ± 0.3
Index mark
0.46 ± 0.05
2.54 ± 0.13
1.47
Photosensitive surface
1.72 ± 0.17
3.0 ± 0.5
1.27 ± 0.25
38.10 ± 0.4
Active area
Type no.
A
B
S11510-1006 14.336 (H)
0.896 (V)
S11510-1106 28.672 (H)
0.896 (V)
1.27 ± 0.2
KMPDA0265EA
Pin connections
Pin no.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Symbol
OS
OD
OG
SG
SS
RD
P4H
P3H
P2H
P1H
IG2H
IG1H
OFG
OFD
ISH
ISV
SS
RD
IG2V
IG1V
P2V
P1V
TG
RG
Function
Output transistor source
Output transistor drain
Output gate
Summing gate
Substrate
Reset drain
CCD horizontal register clock-4
CCD horizontal register clock-3
CCD horizontal register clock-2
CCD horizontal register clock-1
Test point (horizontal input gate-2)
Test point (horizontal input gate-1)
Over flow gate
Over flow drain
Test point (horizontal input source)
Test point (vertical input source)
Substrate
Reset drain
Test point (vertical input gate-2)
Test point (vertical input gate-1)
CCD vertical register clock-2
CCD vertical register clock-1
Transfer gate
Reset gate
Remark (standard operation)
RL=100 kΩ
+24 V
+5 V
Same pulse as P4H
GND
+12 V
-8 V
-8 V
+12 V
+12 V
Connect to RD
Connect to RD
GND
+12 V
-8 V
-8 V
Same pulse as P2V
7
CCD image sensors
S11510 series
Precaution for use (electrostatic countermeasures)
O When handling CCD sensors, always wear a wrist strap and also anti-static clothing, gloves, and shoes, etc. The wrist strap should have a protective resistor (about 1 MΩ) on the side closer to the body and be grounded properly. Using a wrist strap having no protective resistor is hazardous because you may receive an electrical shock if electric leakage occurs.
O Avoid directly placing these sensors on a work bench that may carry an electrostatic charge.
O Provide ground lines with the work bench and work floor to allow static electricity to discharge.
O Ground the tools used to handle these sensors, such as tweezers and soldering irons.
It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the amount of damage
that occurs.
Driver circuit for CCD image sensor (S11510 series) C11287 [sold separately]
The C11287 is a driver circuit designed for HAMAMATSU CCD image sensors S11510 series. The C11287 can be used in spectrometers, etc.
when combined with the CCD image sensor.
Features
Built-in 14-bit A/D converter
Interface to computer: USB 2.0
Power supply: USB bus power operation
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein.
Type numbers of products listed in the specification sheets or supplied as samples may have a suffix “(X)” which means tentative specifications or a suffix “(Z)”
which means developmental specifications. ©2010 Hamamatsu Photonics K.K.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KMPD1126E03 Aug. 2010 DN
8