PHOTODIODE Si APD S2381 to S2385, S5139, S8611, S3884, S4315 series Low bias operation, for 800 nm band Features Applications l Stable operation at low bias l High-speed response l High sensitivity and low noise l Spatial light transmission l Rangefinder ■ General ratings / Absolute maximum ratings Type No. Dimensional outline/ Window material *1 S2381 S2382 S5139 S8611 S2383 S2383-10 *3 S3884 S2384 S2385 Package ➀/K ➁/L ➂/L TO-18 ➀/K ➃/K ➄/K ➅/K TO-5 TO-8 Active area *2 size Effective active area (mm) φ0.2 (mm 2) 0.03 φ0.5 0.19 φ1.0 0.78 φ1.5 φ3.0 φ5.0 1.77 7.0 19.6 Absolute maximum ratings Storage Operating temperature temperature Tstg Topr (°C) (°C) -20 to +85 -55 to +125 ■ Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Excess Photo Quantum Break do w n Cut-off *4 Dark Spectral Peak *4 Temp. Terminal * 4 Noise Gain sensitivity efficiency voltage coefficient current *4 frequency response sensitivity capacitance figure *4 V BR M S QE ID range wavelength of fc ID =100 µA Ct λ=800 nm x M=1 M=1 Type No. V BR R L=50 Ω λp λ λ=800 nm λ=800 nm λ=800 nm (nm) (nm) (A/W) (%) Typ. Max. (V) (V) (V/°C) Typ. Max. (nA) (nA) 0.05 0.5 (MHz) (pF) S2381 1000 1.5 S2382 0.1 1 900 3 S5139 S8611 400 to 1000 800 0.5 75 150 200 0.65 0.3 S2383 0.2 2 600 6 S2383-10 *3 S3884 0.5 5 400 10 S2384 1 10 120 40 3 30 40 95 S2385 *1: Window material K: borosilicate glass, L: lens type borosilicate glass *2: Active area in which a typical gain can be obtained *3: This is a variant of S2383 in which the device chip is light-shielded by aluminum coating except for the active area *4: Measured under conditions that the device is operated at the gain listed in the specification table 100 60 40 Note) The following different breakdown voltage ranges are available. S2381, S2382, S5139, S8611, S3884: -01 (80 to 120 V), -02 (120 to 160 V), -03 (160 to 200 V) S2381-10: -10A (80 to 120 V), -10B (120 to 160 V), -10C (160 to 200 V) 1 Si APD S2381 to S2385, S5139, S8611, S3884, S4315 series ■ Spectral response ■ Quantum efficiency vs. wavelength (Typ. Ta=25 ˚C, λ=800 nm) 50 (Typ. Ta=25 ˚C) 100 40 QUANTUM EFFICIENCY (%) PHOTO SENSITIVITY (A/W) M=100 30 M=50 20 10 0 200 400 600 60 40 20 0 200 1000 800 80 400 WAVELENGTH (nm) 600 800 1000 WAVELENGTH (nm) KAPDB0020EB ■ Dark current vs. reverse voltage KAPDB0021EA ■ Gain vs. reverse voltage (Typ. Ta=25 ˚C) 10 nA (Typ. λ=800 nm) 10000 20 ˚C S2384 0 ˚C 1000 S3884 -20 ˚C S2383/-10 GAIN DARK CURRENT 1 nA 100 pA S2381 10 pA 1 pA 0 50 40 ˚C S2382, S5139, S8611 100 150 100 10 60 ˚C 1 80 200 REVERSE VOLTAGE (V) 100 120 140 160 180 REVERSE VOLTAGE (V) KAPDB0016EC ■ Terminal capacitance vs. reverse voltage KAPDB0017EC ■ Excess noise factor vs. gain (Typ. Ta=25 ˚C, f=1 MHz) 1 nF (Typ. Ta=25 ˚C, f=10 kHz, B=1 Hz) 10 S2384 EXCESS NOISE FACTOR TERMINAL CAPACITANCE M0.5 S2385 100 pF S3884 10 pF S2383/-10 S2382 S5139, S8611 λ=650 nm M0.3 M0.2 S2381 1 pF λ=800 nm 1 0 50 100 150 200 10 100 GAIN REVERSE VOLTAGE (V) KAPDB0018EC 2 1 KAPDB0022EA Si APD S2381 to S2385, S5139, S8611, S3884, S4315 series ■ Dimensional outlines (unit: mm) 5.4 ± 0.2 1.5 LENS 3.7 ± 0.2 0.45 LEAD 2.8 2.8 PHOTOSENSITIVE SURFACE 0.45 LEAD 13 0.4 MAX. PHOTOSENSITIVE SURFACE 4.65 ± 0.1 0.4 MAX. 4.7 ± 0.1 0.65 ± 0.15 5.4 ± 0.2 WINDOW 2.0 MIN. 3.75 ± 0.2 ➁ S5139 13 ➀ S2381, S2382, S2383/-10 2.54 ± 0.2 2.54 ± 0.2 1.2 MAX. 1.2 MAX. CASE CASE KAPDA0010EA ➃ S3884 4.7 ± 0.2 8.2 ± 0.1 PHOTOSENSITIVE SURFACE 0.4 MAX. 2.8 4.65 ± 0.1 9.1 ± 0.2 0.45 LEAD 13 0.45 LEAD (20) 2.15 ± 0.3 WINDOW 3.0 MIN. 4.5 ± 0.2 5.4 ± 0.2 2.8 ➂ S8611 KAPDA0018EA 5.08 ± 0.2 2.54 ± 0.2 1.5 MAX. 1.2 MAX. CASE CASE KAPDA0031EA ➄ S2384 KAPDA0011EB ➅ S2385 13.9 ± 0.2 0.45 LEAD 0.5 MAX. 3.1 2.8 PHOTOSENSITIVE SURFACE 0.45 LEAD (20) 0.4 MAX. PHOTOSENSITIVE SURFACE 12.35 ± 0.1 4.9 ± 0.2 WINDOW 10.5 ± 0.1 4.2 ± 0.2 8.1 ± 0.1 (15) 9.1 ± 0.2 WINDOW 5.9 ± 0.1 7.5 ± 0.2 5.08 ± 0.2 INDEX MARK 1.4 1.0 MAX. 1.5 MAX. CASE The glass window may extend a maximum of 0.2 mm beyond the upper surface of the cap. CASE KAPDA0012EA The glass window may extend a maximum of 0.2 mm beyond the upper surface of the cap. KAPDA0013ED 3 Si APD S4315 series TE-cooled type APD S4315 series Parameter APD 5 Effective active area * Spectral response range Symbol λ λp Peak sensitivity wavelength Condition S4315 S2381 φ0.2 S4315-01 S4315-02 S2382 S2383 φ0.5 φ1.0 400 to 1000 800 35 TO-8 M=60 M=100 Cooling temperature ∆T Package *5: Active area in which a typical gain can be obtained. We welcome your request for active areas different from those listed above. ■ Cooling characteristic of TE-cooler Unit mm nm 800 - nm °C - ■ Current vs. voltage characteristic of TE-cooler (Typ. Ta=25 ˚C, thermal resistance of heatsink=3 ˚C/W) 1.6 (Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W) 1.4 20 1.2 CURRENT (A) ELEMENT TEMPERATURE (˚C) 40 S4315-04 S2384 φ3.0 0 -20 1.0 0.8 0.6 0.4 -40 0.2 -60 0 0.4 0.8 1.2 1.6 0 0 0.2 0.4 CURRENT (A) 0.6 0.8 1.0 VOLTAGE (V) KAPDB0098EA KAPDB0100EA ■ Dimensional outline (unit: mm) ■ Thermistor temperature characteristic 15.3 ± 0.2 (Typ.) 106 6.4 ± 0.2 1.9 ± 0.2 14 ± 0.2 WINDOW 10 ± 0.2 105 PHOTOSENSITIVE SURFACE 12 MIN. RESISTANCE (Ω) 1.2 0.45 LEAD 104 5.1 ± 0.2 10.2 ± 0.2 103 -40 -20 0 DETECTOR (ANODE) DETECTOR (CATHODE) TE-COOLER (-) TE-COOLER (+) THERMISTOR 20 ELEMENT TEMPERATURE (˚C) KIRDB0116EA 5.1 ± 0.2 KAPDA0020EB Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. Type numbers of products listed inthe specification sheets or supplied as samples may have a suffix "(X)" which means tentative specifications or a suffix "(Z)" which means developmental specifications. ©2010 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 4 Cat. No. KAPD1007E09 May 2010 DN