IMAGE SENSOR CCD area image sensor S7199-01 Front-illuminated FFT-CCDs for X-ray imaging S7199-01 is a family of FFT-CCD image sensors specifically designed for X-ray imaging. A FOS (Fiber Optic plate with Scintillator) that converts X-ray into visible-light is mounted on the CCD chip, which enables S7199-01 to acquire the X-ray imaging. Two CCD chips of symmetric from side to side are mounted closely for realizing the possible minimum dead space in between. The effective photosensitive length of about 150 mm in total is realized; each chip has 1536 × 128 pixels and the pixel size is 48 × 48 µm. Even a X-ray image of moving object can be taken by taking a unique operation method of TDI, which can also be useful for a non-destructive inspection where the object moves on a belt conveyer. The each chip of S7199-01 has an effective pixel size of 48 × 48 µm and is available in active area of 73.728 (H) × 6.144 (V) mm2. FOP type is also available (S7199-01F). Features Applications l 1536 (H) × 128 (V) pixel format l Pixel size: 48 × 48 µm l Buttable structure of 2 chips l Coupled with FOS for X-ray imaging l TDI (Time Delay Integration) operation l 100 % fill factor l Wide dynamic range l Low dark signal l Low readout noise l MPP operation l General X-ray imaging l Non-destructive inspection l Dental panorama ■ S election gu ide Typ e N o . W ind o w C o o ling Num ber of to ta l p ixe ls Num ber of a ctive p ixe ls A ctive a re a [m m (H ) × m m (V )] FOS (fib e r o p tic pla te N o n -coo led 1 5 3 6 × 1 28 1 5 3 6 × 1 28 7 3 .7 28 × 6.1 4 4 w ith scintilla to r) FOP S 7 1 9 9 -01 F * (fib e r o p tic pla te ) N o te ) A s a n in p ut w in d o w, F O S is su ite d to S 7 19 9 -01 . * W he n th is p rod u ct is u se d fo r X -ra y d e te ction a pp lica tio ns, th e use r sh o uld asse m b le a scin tilla to r o r p ho sp h o r sh ee t. S 7 1 9 9 -01 ■ G eneral ratin gs P a ra m ete r S 7 1 9 9 -01 S 7 1 9 9 -01 F C C D stru ctu re F u ll fra m e tran sfe r o r TD I F ill fa cto r 100 % N u m b e r o f active p ixe ls 1 5 3 6 (H ) × 1 28 (V ) * 1 P ixe l size 4 8 (H ) × 48 (V ) µ m C C D a ctive a re a 7 3 .7 28 (H ) × 6.1 44 (V ) m m * 1 X -ra y se n sitive a re a 146 × 6 m m Ve rtica l clock p h ase 2 p h ase H o rizo n ta l clo ck p ha se 2 p h ase O u tp u t circu it Tw o -sta g e M O S F E T so u rce fo llo w e r w ith lo a d resistan ce X-ra y re so lu tio n 4 to 6 L p /m m a t 60 kVp , 2 0 µ G y To ta l d ose irra dia tio n 5 0 G y m a x. P a cka g e 4 0 p in ce ra m ic packag e *1 : N u m be r o f a ctive p ixe ls pe r ch ip . Tw o ch ips a re use d . 1 CCD area image sensor S7199-01 ■ Absolute maximum ratings (Ta=25 °C) Parameter Storage temperature Operating temperature OD voltage RD voltage ISV voltage IGV voltage IGH voltage SG voltage OG voltage RG voltage TG voltage Vertical clock voltage Horizontal clock voltage Symbol Tstg Topr V OD V RD V ISV V IGV V IGH V SG V OG V RG V TG V P1AV , V P2AV V P1BV , V P2BV V P1AH , V P2AH V P1BH , V P2BH Min. -20 0 -0.5 -0.5 -0.5 -15 -15 -15 -15 -15 -15 Typ. - Max. +70 +40 +20 +18 +18 +15 +15 +15 +15 +15 +15 Unit °C °C V V V V V V V V V -15 - +15 V -15 - +15 V Symbol V OD V RD V OG V SSA V SSD V ISV V IGV V IGH V P1AVH , V P2AVH V P1BVH , V P2BVH V P1AVL, V P2AVL V P1BVL, V P2BVL V P1AHH , V P2AHH V P1BHH , V P2BHH V P1AHL, V P2AHL V P1BHL, V P2BHL V SGH V SGL V RGH V RGL V TGH V TGL Min. 12 12 -0.5 -5 -8 -8 Typ. 15 13 2 0 0 V RD 0 0 Max. 14 5 - Unit V V V V V 0 3 6 -9 -8 -7 0 3 6 -9 -8 -7 0 -9 0 -9 0 -9 3 -8 3 -8 3 -8 6 -7 6 -7 6 -7 ■ Operating conditions (MPP mode, Ta=25 °C) Parameter Output transistor drain voltage Reset drain voltage Output gate voltage Output transistor ground voltage Substrate voltage Vertical input source Test point Vertical input gate Horizontal input gate Vertical shift register clock voltage Horizontal shift register clock voltage Summing gate voltage Reset gate voltage Transfer gate voltage High Low High Low High Low High Low High Low V V V V V V ■ Electrical characteristics (Ta=25 °C) Parameter Signal output frequency Reset clock frequency Symbol fc frg C P1AV , C P2AV Vertical shift register capacitance C P1BV, C P2BV C P1AH , C P2AH Horizontal shift register capacitance C P1BH , C P2BH Summing gate capacitance C SG Reset gate capacitance C RG Transfer gate capacitance C TG Transfer efficiency CTE DC output level Vout Output impedance Zo Power dissipation P *2: Measured at half of the full well capacity. CTE is defined per *3: V OD =15 V. *4: Power dissipation of the on-chip amplifier (each chip). 2 Remark 2 * *3 *3 *3, *4 pixel. Min. - Typ. 2 2 Max. 4 4 Unit MHz MHz - 15000 - pF - 500 - pF 0.99995 5 - 15 10 500 0.99999 8 500 60 11 - pF pF pF V Ω mW CCD area image sensor S7199-01 ■ Electrical and optical characteristics (Ta=25 °C, unless otherwise noted) Parameter Symbol Remark Min. Typ. Max. Unit Saturation output voltage Vsat Fw × Sv V Vertical 600 1200 Full well capacity Fw ke Horizontal 600 1200 Summing 600 1200 CCD node sensitivity Sv *2 0.45 0.6 µV/e 3 Dark current (MPP mode) DS * 8 24 ke /pixel/s 90 Ta=25 °C 4 Nr * e rms Readout noise 60 120 Ta=-40 °C Dynamic range DR *5 5000 20000 X-ray response non-uniformity (S7199-01) XRNU *6 ±10 ±30 % Photo response non-uniformity (S7199-01F) PRNU *7 Point White spots 10 defects *8 Black spots 10 Blemish Cluster defects *9 0 Column defects *10 0 X-ray resolution (S7199-01) ∆R 4 6 Lp/mm *2: VOD=15 V. *3: Dark current doubles for every 5 to 7 °C. *4: Operating frequency is 2 MHz. *5: Dynamic range = Full well capacity / Readout noise *6: X-ray irradiation of 60kVp, measured at half of the full well capacity. Fixed pattern noise (peak to peak) XRNU (%) = × 100 Signal Measuring region that is within 146.0 mm (H) × 6.0 mm (V) (refer to dimensional outline) *7: Measured at one-half of the saturation output (full well capacity) using LED light (peak emission wavelength: 565 nm) Fixed pattern noise (peak to peak) PRNU (%) = × 100 Signal *8: White spots > 20 times of typ. dark signal (8 ke /pixel/s). Black spots > 50 % reduction in response relative to adjacent pixels, measured at half of the full well capacity. *9: continuous 2 to 9 point defects. *10: continuous >10 point defects. ■ Resolution (S7199-01) ■ Response (S7199-01) (X-ray source: 60 kVp) 1.0 (X-ray source: 70 kVp, Filter: aluminum 4 mmt) 1000 0.9 OUTPUT VOLTAGE (mV) 0.8 0.7 CTF 0.6 0.5 0.4 0.3 0.2 500 0.1 0 0 1 2 3 4 5 6 7 8 9 10 SPACIAL FREQUENCY (Line pair/mm) 0 0 10 20 30 40 X-RAY EXPOSURE (µGy) KMPDB0248EA KMPDB0249EB 3 CCD area image sensor ■ Device structure LEFT CHIP RIGHT CHIP B20 ISV B19 IGV SSA OS OD A3 A4 A5 OG A6 SG A7 ...... A8 P2AH A9 P1AH A10 SSD A11 A12 A13 P2BH P1BH IGH B1 B2 B3 IGH P1BH P2BH S1, ... , S1536: ACTIVE ELEMENTS 6 5 4 3 2 1 2 3 4 ...... 125 126127 128 ...... B18 P1BV B17 P2BV B16 P1AV B15 P2AV B14 TG B13 RG S6 S5 S4 S3 S2 S1 RD A2 1536 1535 1534 1533 1532 1531 A1 ...... S1536 S1535 S1534 S1533 S1532 S1531 RG ...... 1531 1532 1533 1534 1535 1536 P2AV A19 TG A20 S1531 S1532 S1533 S1534 S1535 S1536 P1AV A18 1 2 3 4 ...... 125 126127 128 2 3 4 5 6 P2BV A17 S1 S2 S3 S4 S5 S6 ISV A14 IGV A15 P1BV A16 S7199-01 B12 RD B11 SSA B10 OS B9 OD B4 SSD B5 P1AH B6 P2AH B8 OG B7 SG S1, ... , S1536: ACTIVE ELEMENTS KMPDC0110EA ■ Pixel format ← Optical black 0 Blank 0 Left Horizontal Direction → Right Isolation Effective Isolation 0 1536 0 Optical black 0 Top ← Vertical direction → Bottom Isolation Effective Isolation 0 128 0 ■ Timing chart (TDI operation) Tpwv P1AV, P1BV P2AV, P2BV TG P1AH, P1BH P2AH, P2BH SG RG OS ENLARGED VIEW Tovr Tpwh, Tpws TG P1AH, P1BH P2AH, P2BH SG RG Tpwr OS S1 S2 S3 S4 S5 S1535 S1536 KMPDC0142EB 4 Blank 0 CCD area image sensor S7199-01 ■ Timing chart (TDI operation, 2 × 2 pixel binning) Tpwv P1AV, P1BV P2AV, P2BV TG P1AH, P1BH P2AH, P2BH SG RG OS ENLARGED VIEW Tovr Tpwh, Tpws TG P1AH, P1BH P2AH, P2BH SG RG Tpwr OS S1 + S2 S3 + S4 S1535 + S1536 KMPDC0111EC Parameter Symbol Remark Pulse width tpwv 14, 15 * * Rise and fall time tprv, tpfv Pulse width tpwh P1AH, P1BH, Rise and fall time tprh, tpfh *15 P2AH, P2BH Duty ratio Pulse width tpws SG Rise and fall time tprs, tpfs Duty ratio Pulse width tpwr RG Rise and fall time tprr, tpfr TG-P1AH, P1BH Overlap time tovr *14: TG terminal can be short-circuited to P2AV terminal. *15: Symmetrical pulses should be overlapped at 50 % of maximum amplitude. P1AV, P1BV, P2AV, P2BV, TG Min. 30 200 125 10 125 10 10 5 10 Typ. 60 250 50 250 50 50 20 Max. - Unit µs ns ns ns % ns ns % ns ns µs 5 CCD area image sensor S7199-01 ■ Dimensional outline (unit: mm) S7199-01 ) LEFT CHIP ±50 µm MAX. ( RIGHT CHIP EDGE PIXEL DEAD SPACE: 130 to 200 µm FOP 150.0 ± 0.2 75.0 ± 0.4 30.48 ± 0.5 1.6 B20 ← B14 A20 ← A14 25.4 FOP 7.2 → A1 B1 A13 → 22.86 ± 0.5 22.86 ± 0.5 B13 3.4 SCINTILLATOR 0.45 2.54 12.7 ± 0.7 * 28.0 ± 0.3 FOP 3.0 75.0 ± 0.4 30.48 ± 0.5 TDI direction 5.6 149.5 ± 0.5 12.7 ± 0.7 * X-RAY SENSITIVE AREA: 146.0 (H) × 6.0 (V) * Distance between the center of active area and the I/O pins KMPDA0129EB S7199-01F ) LEFT CHIP ±50 µm MAX. ( RIGHT CHIP EDGE PIXEL DEAD SPACE: 130 to 200 µm FOP 150.0 ± 0.2 30.48 ± 0.5 1.6 B20 ← B14 A20 ← A14 25.4 FOP 7.2 A1 → A13 B1 → B13 3.4 22.86 ± 0.5 22.86 ± 0.5 0.45 2.54 12.7 ± 0.7 * 28.0 ± 0.3 FOP 3.0 147.5 30.48 ± 0.5 TDI direction 5.2 149.5 ± 0.5 12.7 ± 0.7 * CCD ACTIVE AREA: 146.0 (H) × 6.0 (V) * Distance between the center of active area and the I/O pins KMPDA0282EB 6 CCD area image sensor S7199-01 ■ Pin connections Pin No. A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 A18 A19 A20 B1 B2 B3 B4 B5 B6 B7 B8 B9 B10 B11 B12 B13 B14 B15 B16 B17 B18 B19 B20 Symbol RG RD SSA OS OD OG SG P2AH P1AH SSD P2BH P1BH IGH ISV IGV P1BV P2BV P1AV P2AV TG IGH P1BH P2BH SSD P1AH P2AH SG OG OD OS SSA RD RG TG P2AV P1AV P2BV P1BV IGV ISV Description Reset gate Reset drain Analog ground Output transistor source Output transistor drain Output gate Summing gate CCD horizontal register clock A-2 CCD horizontal register clock A-1 Digital ground CCD horizontal register clock B-2 CCD horizontal register clock B-1 Test point (Horizontal input gate) Test point (Vertical input source) Test point (Vertical input gate) CCD vertical register clock B-1 CCD vertical register clock B-2 CCD vertical register clock A-1 CCD vertical register clock A-2 Transfer gate Test point (Horizontal input gate) CCD horizontal register clock B-1 CCD horizontal register clock B-2 Digital ground CCD horizontal register clock A-1 CCD horizontal register clock A-2 Summing gate Output gate Output transistor drain Output transistor source Analog ground Reset drain Reset gate Transfer gate CCD vertical register clock A-2 CCD vertical register clock A-1 CCD vertical register clock B-2 CCD vertical register clock B-1 Test point (Vertical input gate) Test Point (Vertical input source) Remark Same timing as P2AH Same timing as P1AH Shorted to RD Same timing as P1AV Same timing as P2AV Same timing as P1AH Same timing as P2AH Same timing as P2AV Same timing as P1AV Shorted to RD ■ Precautions for use (Electrostatic countermeasures) * Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist band with an earth ring, in order to prevent electrostatic damage due to electrical charges from friction. * Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge. * Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to discharge. * Ground the tools used to handle these sensors, such as tweezers and soldering irons. It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the amount of damage that occurs. 7 CCD area image sensor S7199-01 Information described in this material is current as of March, 2011. Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact us for the delivery specification sheet to check the latest information. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Cat. No. KMPD1077E11 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Apr. 2011 DN 8