HAMAMATSU S9970_09

IMAGE SENSOR
CCD area image sensor
S9970/S9971 series
Low dark signal · low readout noise/front-illuminated FFT-CCD
The S9970/S9971 series are families of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. The
S9970/S9971 series offer lower dark current and lower readout noise than the S7010/S7011 series that have been marketed. By using the
binning operation, the S9970/S9971 series can be used as a linear image sensor having a long aperture in the direction of the device length. This
makes the S9970/S9971 series ideally suited for use in spectrophotometry. The binning operation offers significant improvement in S/N and
signal processing speed compared with conventional methods by which signals are digitally added by an external circuit. The S9970/S9971 series
also feature low noise and low dark signal (MPP mode operation). This enables low-light-level detection and long integration time, thus achieving
a wide dynamic range.
The S9970/S9971 series have an effective pixel size of 24 × 24 µm and are available in image areas ranging from 12.288 (H) × 1.44 (V) mm2
(512 × 60 pixels) up to a large image area of 24.576 (H) × 6.048 (V) mm 2 (1024 × 252 pixels). S9970/S9971 series are pin compatible with
S7010/S7011 series. (Operating conditions are a little bit changed from S7010/S7011 series.)
Features
Applications
l Low dark signal: 10 e-/pixel/s Typ. (0 ˚C, MPP mode)
l Low readout noise: 4 e-rms Typ.
l 512 (H) × 60 (V) to 1024 (H) × 252 (V) pixel format
l Pixel size: 24 × 24 µm
l Line/pixel binning
l 100 % fill factor
l Wide dynamic range
l MPP operation
l Fluorescence spectrometer, ICP
l Raman spectrometer
l Industrial inspection requiring
l Semiconductor inspection
l DNA sequencer
l Low-light-level detection
■ Selection guide
Type no.
S9970-0906
S9970-1006
S9970-1007
S9970-1008
S9971-0906
S9971-1006
S9971-1007
S9971-1008
Cooling
Non-cooled
One-stage
TE-cooled
Number of
total pixels
Number of
active pixels
532 × 64
1044 × 64
1044 × 128
1044 × 256
532 × 64
1044 × 64
1044 × 128
1044 × 256
512 × 60
1024 × 60
1024 × 124
1024 × 252
512 × 60
1024 × 60
1024 × 124
1024 × 252
Active area
[mm (H) × mm (V)]
12.288
24.576
24.576
24.576
12.288
24.576
24.576
24.576
×
×
×
×
×
×
×
×
1.440
1.440
2.976
6.048
1.440
1.440
2.976
6.048
Applicable
multichannel
detector head
C7020
C7021
C7025
■ General ratings
Parameter
Pixel size
Vertical clock phase
Horizontal clock phase
Output circuit
Package
S9970 series
S9971 series
24 (H) × 24 (V) µm
2-phase
2-phase
One-stage MOSFET source follower
24 pin ceramic DIP (refer to dimensional outlines)
S9971-0906/-1006/-1007: sapphire
Window*1
Quartz glass
S9971-1008: AR-coated sapphire
*1: Temporary window type (ex. S9970-0906N) and UV coat type (ex. S9970-0906UV) are available upon request.
(On the temporary window type, a window is temporarily attached by tape to protect the CCD chip and wires.)
1
CCD area image sensor
S9970/S9971 series
■ Absolute maximum ratings (Ta=25 °C)
Parameter
Operating temperature
Storage temperature
OD voltage
RD voltage
ISV voltage
ISH voltage
IGV voltage
IGH voltage
SG voltage
OG voltage
RG voltage
TG voltage
Vertical clock voltage
Horizontal clock voltage
Symbol
Topr
Tstg
VOD
VRD
VISV
VISH
VIG1V , VIG2V
VIG1H , VIG2H
VSG
VOG
VRG
VTG
VP1V , VP2V
VP1H , VP2H
Min.
-50
-50
-0.5
-0.5
-0.5
-0.5
-15
-15
-15
-15
-15
-15
-15
-15
Typ.
-
Max.
+30
+70
+25
+18
+18
+18
+15
+15
+15
+15
+15
+15
+15
+15
Unit
°C
°C
V
V
V
V
V
V
V
V
V
V
V
V
Symbol
VOD
VRD
VOG
VSS
VISV
VISH
VIG1V , VIG2V
VIG1H , VIG2H
VP1VH , VP2VH
VP1VL, VP2VL
VP1HH , VP2HH
VP1HL, VP2HL
VSGH
VSGL
VRGH
VRGL
VTGH
VTGL
RL
Min.
18
11.5
1
-8
-8
0
-9
0
-9
0
-9
0
-9
0
-9
20
Typ.
20
12
3
0
VRD
VRD
0
0
4
-8
4
-8
4
-8
4
-8
4
-8
22
Max.
22
12.5
5
6
-7
6
-7
6
-7
6
-7
6
-7
24
Unit
V
V
V
V
V
V
V
V
Typ.
0.1
750
1500
3000
6000
100
180
180
180
7
7
60
100
100
100
0.99999
15
5
15
Max.
1
18
-
Unit
MHz
■ Operating conditions (MPP mode, Ta=25 °C)
Parameter
Output transistor drain voltage
Reset drain voltage
Output gate voltage
Substrate voltage
Test point (vertical input source)
Test point (horizontal input source)
Test point (vertical input gate)
Test point (horizontal input gate)
Vertical shift register
clock voltage
Horizontal shift register
clock voltage
Summing gate voltage
Reset gate voltage
Transfer gate voltage
High
Low
High
Low
High
Low
High
Low
High
Low
External load resistance
V
V
V
V
V
kΩ
■ Electrical characteristics (Ta=25 °C)
Parameter
Symbol
Min.
Signal output frequency
fc
S9970/S9971-0906
Vertical shift register
S9970/S9971-1006
CP1V , CP2V
capacitance
S9970/S9971-1007
S9970/S9971-1008
S9970/S9971-0906
Horizontal shift register
S9970/S9971-1006
CP1H , CP2H
capacitance
S9970/S9971-1007
S9970/S9971-1008
Summing gate capacitance
CSG
Reset gate capacitance
CRG
S9970/S9971-0906
Transfer gate
S9970/S9971-1006
CTG
capacitance
S9970/S9971-1007
S9970/S9971-1008
Transfer efficiency*2
CTE
0.99995
DC output level
Vout
12
Output impedance
Zo
Power dissipation*3
P
*2: Charge transfer efficiency per pixel, measured at half of the full well capacity
*3: Power dissipation of the on-chip amplifier plus load resistance
2
pF
pF
pF
pF
pF
V
kΩ
mW
CCD area image sensor
S9970/S9971 series
■ Electrical and optical characteristics (Ta=25 °C, unless otherwise noted)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Saturation output voltage
Vsat
Fw × Sv
V
Full well
Vertical
150
300
Fw
kecapacity
Horizontal
300
600
Sv
3.5
µV/eCCD node sensitivity*4
5
Dark current*
+25 °C
200
3000
DS
e-/pixel/s
(MPP mode)
0 °C
10
150
Readout noise*6
Nr
4
18
e-rms
Line
binning
75000
150000
Dynamic range*7
DR
Area scanning
37500
75000
Spectral response range
λ
400 to 1100
nm
Photo response non-uniformity*8
PRNU
±10
%
Point defects*9
0
Blemish
Cluster defects*10
0
0
Column defects*11
*4: VOD=20 V , Load resistance=22 kΩ
*5: Dark current nearly doubles for every 5 to 7 °C increase in temperature.
*6: -40 °C, operating frequency is 80 kHz.
*7: Dynamic range (DR) = Full well capacity / Readout noise
*8: Measured at one-half of the saturation output (full well capacity) using LED light (peak emission wavelength: 560 nm)
Photo response non-uniformity =
Fixed pattern noise (peak to peak)
Signal
× 100 [%]
*9: White spots
Pixels that generate dark current higher than 3% of the saturation. (Measured at 0 °C, Ts=1 s)
Black spots
Pixels whose sensitivity is lower than one-half of the average pixel output. (Measured with uniform light producing one-half
of the saturation charge)
*10: 2 to 9 contiguous defective pixels
*11: 10 or more contiguous defective pixels
■ Spectral response (without window)*12
■ Spectral transmittance characteristics of window material
(Typ. Ta=25 ˚C)
50
(Typ. Ta=25 ˚C)
100
90
80
Quartz glass
Transmittance (%)
Quantum efficiency (%)
40
30
20
UV-coated
70
60
AR-coated sapphire
Sapphire
50
40
30
20
10
10
0
200 300 400 500 600 700 800 900 1000 1100 1200
0
100 200 300 400 500 600 700 800 900 1000
Wavelength (nm)
Wavelength (nm)
KMPDB0244EB
KMPDB0310EA
*12: Spectral response with sapphire or AR-coated sapphire is
decreased according to the spectral transmittance characteristic of window material.
3
CCD area image sensor
■ Dark current vs. temperature
S9970/S9971 series
■ Window material
Type No.
(Typ.)
100
S9970 series
Dark current (e-/pixel/s)
S9971-0906/-1006/-1007
10
S9971-1008
Window material
Quartz glass*13
(option: window-less)
Sapphire*14
(option: window-less)
AR-coated sapphire*14
(option: window-less)
*13: Resin sealing
*14: Hermetic sealing
1
0.1
0.01
-50
-40
-30
-20
-10
0
10
20
Temperature (˚C)
KMPDB0305EA
■ Device structure (conceptual drawing of top view in dimensional outlines)
IG1V IG2V ISV
24
23 22
SS
20
TG
16
P1V
15
P2V
14
......
V
1
RD
2
OS
3
......
......
H
D11
D12
D13
D14
D15
D16
D17
D18
D19
D20
RG
D1
D2
D3
D4
D5
D6
D7
D8
D9
D10
1
V=60, 124, 252
H=512, 1024
13 ISH
12 IG1H
4
OD
5
OG
6
SG
9
10
11
2 isolation pixels
2 isolation pixels
IG2H
P2H P1H
512 or 1024
4 optical
4 optical
signal out
4 blank pixels black pixels
black pixels 4 blank pixels
KMPDC0015EC
Pixel format
Blank
4
Optical Black
4
Left ← Horizontal Direction → Right
Isolation
Effective
Isolation
2
512 or 1024
2
Top ← Vertical Direction → Bottom
Isolation
Effective
Isolation
2
60, 124 or 252
2
4
Optical Black
4
Blank
4
CCD area image sensor
S9970/S9971 series
■ Timing chart
Line binning
Integration period
(shutter has to be open)
Tpwv
1
Vertical binning period
(shutter has to be closed)
63
3.. 62
3..126 127
3..254 255
2
Readout period (shutter has to be closed)
64← 60 + 4 (isolation): S997*/1-0906/-1006
128← 124 + 4 (isolation): S997*/1-1007
256← 252 + 4 (isolation): S997*/1-1008
P1V
Tovr
P2V, TG
4..530 531
4..1042 1043
Tpwh, Tpws
P1H
1
2
3
532 : S997*/1-0906
1044: S997*/1-1006/-1007/-1008
P2H, SG
Tpwr
RG
OS
D1
D2
S1..S512
D19
D3..D10, S1..S1024, D11..D18
D20: S997*/1-0906
: S997*/1-1006/-1007/-1008
KMPDC0227EB
Area scanning (large full well mode)
Integration period
(shutter has to be open)
Tpwv
1
2
Readout period (shutter has to be closed)
4.. 63 64← 60 + 4 (isolation): S997*/1-0906/-1006
4..127 128←124 + 4 (isolation): S997*/1-1007
4..255 256←252 + 4 (isolation): S997*/1-1008
3
P1V
P2V, TG
P1H
P2H, SG
RG
OS
Tovr
P2V, TG
Enlarged view
Tpwh, Tpws
P1H
P2H, SG
Tpwr
RG
OS
D1
D2
D3
S1..S512
D4
D18
D5..D10, S1..S1024, D11..D17
D19
D20: S997*/1-0906
: S997*/1-1006/-1007/-1008
KMPDC0229EB
Parameter
Symbol
Min.
1.5
3.0
15
Pulse width*
Tpwv
P1V, P2V, TG
6.0
12
Rise and fall times
Tprv, Tpfv
200
Pulse width
Tpwh
500
P1H, P2H
Rise and fall times*15
Tprh, Tpfh
10
Duty ratio
Pulse width
Tpws
500
SG
Rise and fall times
Tprs, Tpfs
10
Duty ratio
Pulse width
Tpwr
100
RG
Rise and fall times
Tprr, Tpfr
5
TG - P1H
Overlap time
Tovr
3
*15: Symmetrical clock pulses should be overlapped at 50% of maximum amplitude.
S9970/S9971-0906
S9970/S9971-1006
S9970/S9971-1007
S9970/S9971-1008
Typ.
4.5
9.0
18
36
5000
50
5000
50
500
6
Max.
-
Unit
µs
ns
ns
ns
%
ns
ns
%
ns
ns
µs
5
S9970/S9971 series
CCD area image sensor
■ Dimensional outlines (unit: mm)
S9970-0906
Active area
12.288
Photosensitive
surface
1.1 ± 0.3
1.440
13
1
10.05 ± 0.25
24
12
31.75 ± 0.3
1st pin index mark
3.0 ± 0.3
Photosensitive surface
0.46 ± 0.05
2.54 ± 0.13
27.94 ± 0.13
KMPDA0193EB
S9970-1006/-1007
Photosensitive
surface
A
1.1 ± 0.3
B
13
1
10.05 ± 0.25
24
12
40.64 ± 0.41
1st pin index mark
3.0 ± 0.3
Photosensitive surface
Type No.
0.46 ± 0.05
S9970-1006
S9970-1007
Active area
A
B
24.576 (H)
24.576 (H)
1.440 (V)
2.976 (V)
2.54 ± 0.13
27.94 ± 0.13
KMPDA0194EB
S9970-1008
Active area
24.576
1.1 ± 0.3
6.048
13
1
14.99 ± 0.25
24
Photosensitive
surface
12
40.64 ± 0.41
1st pin index mark
3.0 ± 0.3
Photosensitive surface
0.46 ± 0.05
2.54 ± 0.13
27.94 ± 0.13
KMPDA0195EB
6
S9970/S9971 series
CCD area image sensor
S9971-0906
3.2 ± 0.4
14.99 ± 0.25
7.5
13
12.0
4.0
24
1.440
Active area 12.288
1
5.0 ± 0.3
12
32.0 ± 0.3
50.0 ± 0.3
1st pin index mark
Photosensitive surface
7.65 ± 0.5
TE-cooler
0.46 ± 0.05
2.54 ± 0.13
27.94 ± 0.13
KMPDA0196EB
S9971-1006/-1007
A
1
5.0 ± 0.3
14.99 ± 0.25
12.0
4.0
B
13
C
3.2 ± 0.4
24
12
40.64 ± 0.41
58.84 ± 0.13
1st pin index mark
Photosensitive surface
Type No.
S9971-1006
S9971-1007
0.46 ± 0.05
2.54 ± 0.13
7.65 ± 0.5
TE-cooler
Active area
A
24.576 (H)
24.576 (H)
B
1.440 (V)
2.976 (V)
C
7.5
7.1
27.94 ± 0.13
KMPDA0197EB
S9971-1008
Window 28.6*
Active area 24.576
19.0
22.4 ± 0.3
22.9 ± 0.3
6.7 ± 0.63
7.3 ± 0.63
4.0
5.3 ± 0.15
13
6.048
1
12
2.54 ± 0.13
44.0 ± 0.44
52.0
1st pin indication pad
Photosensitive surface
7.7 ± 0.68
60.0 ± 0.3
TE-cooler
1.0
8.2*
24
(24×)
0.5 ± 0.05
* Size of window that guarantees the transmittance in the "Spectral
transmittance characteristics of window material" graph
KMPDA0198EB
KMPDA0198EB
7
CCD area image sensor
S9970/S9971 series
■ Pin connections
S9970 series
S9971 series
Remark
(standard operation)
Symbol
Description
Symbol
Description
1
RG
Reset gate
RG
Reset gate
2
RD
Reset drain
RD
Reset drain
+12 V
3
OS
Output transistor source
OS
Output transistor source
RL=22 kΩ
4
OD
Output transistor drain
OD
Output transistor drain
+20 V
5
OG
Output gate
OG
Output gate
+3 V
Same timing as P2H
6
SG
Summing gate
SG
Summing gate
7
Th1
Thermistor
8
Th2
Thermistor
9
P2H
CCD horizontal register clock-2
P2H
CCD horizontal register clock-2
10
P1H
CCD horizontal register clock-1
P1H
CCD horizontal register clock-1
11
IG2H
Test point (horizontal input gate-2)
IG2H
Test point (horizontal input gate-2) 0 V
12
IG1H
Test point (horizontal input gate-1)
IG1H
Test point (horizontal input gate-1) 0 V
13
ISH
Test point (horizontal input source)
ISH
Test point (horizontal input source) Shorted to RD
14
P2V
CCD vertical register clock-2
P2V
CCD vertical register clock-2
15
P1V
CCD vertical register clock-1
P1V
CCD vertical register clock-1
16
TG*16
Transfer gate
TG*16
Transfer gate
Same timing as P2V
17
18
PTE-cooler19
P+
TE-cooler+
20
SS
Substrate (GND)
SS
Substrate (GND)
GND
21
22
ISV
Test point (vertical input source)
ISV
Test point (vertical input source)
Shorted to RD
23
IG2V
Test point (vertical input gate-2)
IG2V
Test point (vertical input gate-2)
0V
24
IG1V
Test point (vertical input gate-1)
IG1V
Test point (vertical input gate-1)
0V
*16: TG is an isolation gate between vertical register and horizontal register. In standard operation, the same pulse as P2V should
be applied to TG.
Pin No.
■ Specifications of built-in TE-cooler (Typ.)
Parameter
Symbol
Condition
S9971-0906
S9971-1006/-1007
S9971-1008
Unit
Internal resistance
Rint Ta=25 °C
2.8
6.0
1.2
Ω
17
18
19
Maximum current*
Imax Tc* =Th* =25 °C
1.5
1.5
3.0
A
Maximum voltage
Vmax Tc*18=Th*19=25 °C
4.4
8.8
3.6
V
Maximum heat
Qmax
3.4
6.7
5.1
W
absorption*20
Maximum temperature
70
°C
of hot side
*17: If the current is greater than Imax, the heat absorption begins to decrease due to the Joule heat. It should be noted that
this value is not a damage threshold. To protect the thermoelectric cooler and maintain stable operation, the supply
current should be less than 60 % of this maximum current.
*18: Temperature of cool side of thermoelectric cooler
*19: Temperature of hot side of thermoelectric cooler
*20: This is a heat absorption when the maximum current is supplied to the TE-cooler.
8
CCD area image sensor
S9970/S9971 series
■ TE-cooler characteristics
S9971-0906
S9971-1006/-1007
(Typ. Ta=25 ˚C)
10
4
10
8
10
3
0
6
0
2
-10
4
-10
1
-20
2
-20
-30
2.0
0
Voltage vs. Current
CCD temperature vs. Current
0
0
0.5
1.0
1.5
Voltage (V)
CCD temperature (˚C)
Voltage vs. current
CCD temperature vs. current
Voltage (V)
20
20
0
0.5
1.0
1.5
CCD temperature (˚C)
(Typ. Ta=25 ˚C)
5
-30
2.0
Current (A)
Current (A)
KMPDB0176EB
KMPDB0177EB
S9971-1008
(Typ. Ta=25 ˚C)
6
Voltage (V)
30
Voltage vs. current
CCD temperature vs. current
20
5
10
4
0
3
-10
2
-20
1
-30
0
0
1
2
3
4
CCD temperature (˚C)
7
-40
Current (A)
KMPDB0179EB
9
CCD area image sensor
S9970/S9971 series
■ Specifications of built-in temperature sensor
A chip thermistor is built in the same package with a CCD chip, and the CCD chip temperature can be monitored with it. A
relation between the thermistor resistance and absolute temperature is expressed by the following equation.
1 MΩ
The characteristics of the thermistor used are as follows.
R298=10 kΩ
B298/323=3450 K
Resistance
RT1 = RT2 × exp BT1/T2 (1/T1 - 1/T2)
RT1: Resistance at absolute temperature T1 [K]
RT2: Resistance at absolute temperature T2 [K]
BT1/T2: B constant [K]
100 kΩ
10 kΩ
220
240
260
280
300
Temperature (K)
■ Precaution for use (Electrostatic countermeasures)
KMPDB0111EB
● Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist strap, in
order to prevent electrostatic damage due to electrical charges from friction.
● Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge.
● Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to
discharge.
● Ground the tools used to handle these sensors, such as tweezers and soldering irons.
It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the
amount of damage that occurs.
■ Element cooling/heating temperature gradient rate
When using an external cooler, the element cooling/heating temperature gradient rate should be set at less than 5 K/min.
Multichannel detector head (C7020, C7021, C7025)
Features
l C7020: for S9970 series
C7021: for S9971-0906/-1006/-1007
C7025: for S9971-1008
l Area scanning or full line-binnng operation
l Readout frequency: 250 kHz
l Readout noise: 20 e-rms
l ∆T=50 ˚C (∆T changes by radiation method.)
Input
Supply
voltage
Master start
Master clock
10
Sym bol
V D1
V A1+
V A1V A2
V D2
Vp
VF
φm s
φm c
Value
+5 Vdc, 200 m A
+15 Vdc, +100 m A
-15 Vdc, -100 m A
+24 Vdc, 30 m A
+5 Vdc, 30 m A (C7021, C7025)
+5 Vdc, 2.5 A (C7021, C7025)
+12 Vdc, 100 m A (C7021, C7025)
HCMOS logic com patible
HCMOS logic com patible, 1 MHz
CCD area image sensor
S9970/S9971 series
Multichannel detector head controller
Type no.
Interface
S7557
SCSI
S7557-01
USB2.0
Photo
Accessories
·SCSI terminator
·Fuse (2.5 A)
·Detector head connection cable
·AC cable
·Software (compatible OS: Windows 98/ME*21)
·Operation manual
·USB cable
·Fuse (2.5 A)
·Detector head connection cable
·AC cable
·Software (compatible OS: Windows 2000/XP/Vista)
·Operation manual
·MOS adapter
Note: SCSI cable and SCSI board (card) are not supplied with the C7557
*21: This software may be run on Windows 2000/NT/XP with a simple task. For information on how to do this, please consult
with our sales office.
■ Connection example
Shutter*
timing pulse
AC cable (100 to 240 V; included with the C7557-01)
Trig.
POWER
Dedicated cable
(Included with the C7557-01)
SIGNAL I/O
USB cable
(Included with
the C7557-01)
TE CONTROL I/O
Image sensor
+
Multichannel
detector head
C7557-01
PC (Windows 2000/XP/Vista)
(USB 2.0)
* Shutter, etc. are not available.
KACCC0402EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein.
Type numbers of products listed inthe specification sheets or supplied as samples may have a suffix "(X)" which means tentative specifications or a suffix "(Z)"
which means developmental specifications. ©2009 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KMPD1089E07
Nov. 2009 DN
11