HMC408LP3 / 408LP3E v03.0705 LINEAR & POWER AMPLIFIERS - SMT 11 GaAs InGaP HBT MMIC 1 WATT POWER AMPLIFIER, 5.1 - 5.9 GHz Typical Applications Features The HMC408LP3 / HMC408LP3E is ideal for: Gain: 20 dB • 802.11a & HiperLAN WLAN Saturated Power: +32.5 dBm @ 27% PAE • UNII & Point-to-Point / Multi-Point Radios Single Supply Voltage: +5V • Access Point Radios Power Down Capability 3x3 mm Leadless SMT Package Functional Diagram General Description The HMC408LP3 & HMC408LP3E are 5.1 - 5.9 GHz high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) Power Amplifier MMICs which offer +30 dBm P1dB. The amplifier provides 20 dB of gain, +32.5 dBm of saturated power, and 27% PAE from a +5V supply voltage. The input is internally matched to 50 Ohms while the output requires a minimum of external components. Vpd can be used for full power down or RF output power/current control. The amplifier is packaged in a low cost, 3x3 mm leadless surface mount package with an exposed base for improved RF and thermal performance. Electrical Specifi cations, TA = +25° C, Vs = 5V, Vpd = 5V Parameter Min. Frequency Range Typ. Max. Min. 5.7 - 5.9 Gain 17 Gain Variation Over Temperature 20 0.045 17 0.055 Typ. Max. GHz 20 dB 0.045 0.055 dB/°C Input Return Loss 8 8 dB Output Return Loss* 14 6 dB 24 27 23 dBm 31 dBm 36 39 dBm -50 -90 dBc dBc Output Power for 1 dB Compression (P1dB) Icq= 750 mA Icq= 500 mA 27 Saturated Output Power (Psat) Harmonics, Pout= 30 dBm, F= 5.8 GHz 40 2 fo 3 fo Noise Figure Supply Current (Icq) 30 27 32.5 Output Third Order Intercept (IP3) Vpd= 0V/5V 43 -50 -90 6 6 dB 0.002 / 750 0.002 / 750 mA Control Current (Ipd) Vpd= 5V 14 14 mA Switching Speed tOn, tOff 50 50 ns * Output match optimized for 5.7 - 5.9 GHz operation. See Application Circuit herein. 11 - 34 Units 5.1 - 5.9 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC408LP3 / 408LP3E v03.0705 GaAs InGaP HBT MMIC 1 WATT POWER AMPLIFIER, 5.1 - 5.9 GHz Gain vs. Temperature 25 S21 S11 S22 5 GAIN (dB) RESPONSE (dB) 15 -5 -15 -25 3 4 5 6 7 8 26 24 22 20 18 16 14 12 10 8 6 4 2 0 4.8 5 5.2 FREQUENCY (GHz) 5.4 5.6 6 6.2 Output Return Loss vs. Temperature* 0 0 +25 C +85 C -40 C -4 -5 RETURN LOSS (dB) RETURN LOSS (dB) 5.8 FREQUENCY (GHz) Input Return Loss vs. Temperature -10 +25 C +85 C -40 C -15 -20 4.8 11 +25 C +85 C -40 C 5 5.2 5.4 5.6 -8 -12 -16 5.8 6 -20 4.8 6.2 5 5.2 FREQUENCY (GHz) 5.4 5.6 5.8 6 6.2 5.8 6 6.2 FREQUENCY (GHz) P1dB vs. Temperature Psat vs. Temperature 36 36 33 32 Psat (dBm) P1dB (dBm) 30 28 24 +25 C +85 C -40 C 20 27 24 +25 C +85 C -40 C 21 18 16 12 4.8 LINEAR & POWER AMPLIFIERS - SMT Broadband Gain & Return Loss 15 5 5.2 5.4 5.6 5.8 6 FREQUENCY (GHz) 6.2 12 4.8 5 5.2 5.4 5.6 FREQUENCY (GHz) * Output match optimized for 5.7 - 5.9 GHz. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 35 HMC408LP3 / 408LP3E v03.0705 GaAs InGaP HBT MMIC 1 WATT POWER AMPLIFIER, 5.1 - 5.9 GHz Power Compression @ 5.8 GHz Output IP3 vs. Temperature 45 Pout (dBm) Gain (dB) PAE (%) 30 42 IP3 (dBm) 24 18 36 +25 C +85 C -40 C 33 6 -5 0 5 10 15 30 4.8 20 5 5.2 10 GAIN (dB), P1dB (dBm), Psat (dBm) NOISE FIGURE (dB) 5.8 6 6.2 34 8 6 4 +25 C +85 C -40 C 2 5 5.2 5.4 5.6 5.8 6 32 30 28 26 Gain P1dB Psat 24 22 20 18 4.75 6.2 5 Gain, Power & Quiescent Supply Current vs. Vpd @ 5.8 GHz Reverse Isolation vs. Temperature -10 Reverse Isolation Power Down Isolation -30 -40 36 800 33 700 30 600 27 500 24 400 Icq 300 21 18 200 Gain P1dB Psat 15 100 0 12 5 5.2 5.4 5.6 FREQUENCY (GHz) 5.8 6 6.2 3 3.2 3.4 3.6 3.8 4 4.2 4.4 4.6 Vpd (Vdc) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4.8 5 Icq (mA) GAIN (dB), P1dB (dBm), Psat (dBm) 0 -20 5.25 Vcc Supply Voltage (Vdc) FREQUENCY (GHz) -60 4.8 5.6 Gain & Power vs. Supply Voltage @ 5.8 GHz Noise Figure vs. Temperature 0 4.8 5.4 FREQUENCY (GHz) INPUT POWER (dBm) -50 11 - 36 39 12 0 -10 ISOLATION (dB) LINEAR & POWER AMPLIFIERS - SMT 11 Pout (dBm), GAIN (dB), PAE (%) 36 HMC408LP3 / 408LP3E v03.0705 GaAs InGaP HBT MMIC 1 WATT POWER AMPLIFIER, 5.1 - 5.9 GHz Typical Supply Current vs. Vs= Vcc1 + Vcc2 Absolute Maximum Ratings Collector Bias Voltage (Vcc1, Vcc2) +5.5 Vdc Vs (V) Icq (mA) Control Voltage (Vpd) +5.5 Vdc 4.75 725 RF Input Power (RFIN)(Vs = Vpd = +5Vdc) +20 dBm 5.0 750 Junction Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 72.5 mW/°C above 85 °C) 4.71 W Thermal Resistance (junction to ground paddle) 13.8 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C 5.25 780 Note: Amplifier will operate over full voltage range shown above ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE LINEAR & POWER AMPLIFIERS - SMT 11 SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC408LP3 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 HMC408LP3E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 Package Marking [3] [1] 408 XXXX [2] 408 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 37 HMC408LP3 / 408LP3E v03.0705 GaAs InGaP HBT MMIC 1 WATT POWER AMPLIFIER, 5.1 - 5.9 GHz Pin Descriptions Pin Number Function Description 1 Vpd Power control pin. For maximum power, this pin should be connected to 5V. A higher voltage is not recommended. For lower idle current, this voltage can be reduced. 2, 4, 5 - 8, 12, 13, 15 N/C No Connection 3 RFIN This pin AC coupled and matched to 50 Ohms. 9, 10, 11 RFOUT RF output and DC bias for the output stage. 14 Vcc2 Power supply voltage for the second amplifier stage. External bypass capacitors and pull up choke are required as shown in the application schematic. 16 Vcc1 Power supply voltage for the first amplifier stage. External bypass capacitors are required as shown in the application schematic. GND Ground: Backside of package has exposed metal ground slug that must be connected to ground thru a short path. Vias under the device are required. Interface Schematic LINEAR & POWER AMPLIFIERS - SMT 11 11 - 38 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC408LP3 / 408LP3E v03.0705 GaAs InGaP HBT MMIC 1 WATT POWER AMPLIFIER, 5.1 - 5.9 GHz Evaluation PCB List of Materials for Evaluation PCB 105180 [1] Item Description J1 - J2 PCB Mount SMA RF Connector J3 2 mm DC Header C1 - C4 1,000 pF Capacitor, 0603 Pkg. C5 - C7 100 pF Capacitor, 0402 Pkg. C8 2.2 μF Tantalum Capacitor C9 - C10 0.5 pF Capacitor, 0603 Pkg. C11 10 pF Capacitor, 0402 Pkg. L1 - L2 1.6 nH Inductor, 0603 Pkg. U1 HMC408LP3 / HMC408LP3E Amplifier PCB [2] 104629 Eval Board The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. LINEAR & POWER AMPLIFIERS - SMT 11 [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 39 HMC408LP3 / 408LP3E v03.0705 GaAs InGaP HBT MMIC 1 WATT POWER AMPLIFIER, 5.1 - 5.9 GHz Application Circuit LINEAR & POWER AMPLIFIERS - SMT 11 Recommended Component Values TL1 TL2 L1, L2 1.6 nH Impedance 50 Ohm 50 Ohm C1 - C4 1,000 pF Length 0.200” 0.100” C5 - C7 100 pF C8 2.2 μF C9 - C10 0.5 pF Note 1: C9, C10 should be located < 0.020” from pins 9, 10, & 11. Note 2: Application circuit values shown are optimized for 5.7 - 5.9 GHz operation. Contact our Applications Engineers for optimization of output match for other frequencies. 11 - 40 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC408LP3 / 408LP3E v03.0705 GaAs InGaP HBT MMIC 1 WATT POWER AMPLIFIER, 5.1 - 5.9 GHz Notes: LINEAR & POWER AMPLIFIERS - SMT 11 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 41