HMC441 v06.0508 3 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6 - 18 GHz Typical Applications Features The HMC441 is ideal for: Gain: 15.5 dB • Point-to-Point and Point-to-Multi-Point Radios Saturated Power: +22 dBm @ 23% PAE • VSAT Single Supply Voltage: +5V w/ Optional Gate Bias • LO Driver for HMC Mixers 50 Ohm Matched Input/Output LINEAR & POWER AMPLIFIERS - CHIP • Military EW & ECM Die Size: 0.94 x 0.94 x 0.1 mm Functional Diagram General Description The HMC441 is an efficient GaAs PHEMT MMIC Medium Power Amplifier which operates between 6 and 18 GHz*. The amplifier provides 15.5 dB of gain, +22 dBm of saturated power, and 23% PAE from a +5V supply voltage. An optional gate bias is provided to allow adjustment of gain, RF output power, and DC power dissipation. The HMC441 amplifier can easily be integrated into Multi-Chip-Modules (MCMs) due to its small size. The backside of the die is both RF and DC ground, simplifying the assembly process and reducing performance variation. All data is tested with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils). Vgg1, Vgg2: Optional Gate Bias Electrical Specifi cations, TA = +25° C, Vdd1 = Vdd2 = 5V, Vgg1 = Vgg2 = Open Parameter Min. Frequency Range Gain Typ. Max. Min. 7.0 - 8.0 13 Gain Variation Over Temperature 15.5 0.015 Typ. Max. Min. 8.0 - 12.5 14 0.02 16.5 0.015 Typ. Max. Min. 12.5 - 14.0 13 0.02 15.5 0.015 Typ. Max. 14.0 - 15.5 12 0.02 GHz 14.5 0.015 dB 0.02 dB/ °C Input Return Loss 10 13 15 14 dB Output Return Loss 14 17 23 18 dB Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) 15.5 18.5 16 19 17 20 17 20 dBm 17 20 18 21 19 22 19 22 dBm dBm Output Third Order Intercept (IP3) 29 31 32 32 Noise Figure 5.0 4.5 4.5 4.5 Supply Current (Idd) 90 90 90 115 90 115 dB 115 *Contact HMC for Electrical Spec Limits for 6-7 & 15.5 - 18 GHz. 3-8 Units For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com mA HMC441 v06.0508 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6 - 18 GHz Broadband Gain & Return Loss Gain vs. Temperature 20 20 15 16 S21 0 S11 S22 -5 -10 3 12 +25 C +85 C -55 C 8 -15 4 -20 -25 0 -30 4 6 8 10 12 14 16 18 6 20 8 10 12 14 16 18 FREQUENCY (GHz) FREQUENCY (GHz) Input Return Loss vs. Temperature Output Return Loss vs. Temperature 0 0 -5 RETURN LOSS (dB) RETURN LOSS (dB) -4 +25 C +85 C -55 C -8 -12 +25 C +85 C -55 C -10 -15 -20 -25 -16 -30 -20 -35 6 8 10 12 14 16 6 18 8 FREQUENCY (GHz) 14 16 18 16 18 Psat vs. Temperature 25 25 23 23 Psat (dBm) P1dB (dBm) 12 FREQUENCY (GHz) P1dB vs. Temperature 21 19 +25 C +85 C -55 C 17 10 LINEAR & POWER AMPLIFIERS - CHIP 5 GAIN (dB) RESPONSE (dB) 10 21 +25 C +85 C -55 C 19 17 15 15 6 8 10 12 14 FREQUENCY (GHz) 16 18 6 8 10 12 14 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3-9 HMC441 v06.0508 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6 - 18 GHz Power Compression @ 11 GHz Power Compression @ 15 GHz Pout (dBm), GAIN (dB), PAE (%) 30 Pout (dBm) Gain (dB) PAE (%) 25 20 15 10 5 0 -10 -6 -2 2 20 15 10 5 0 -10 10 -6 10 32 8 NOISE FIGURE (dB) IP3 (dBm) 2 6 10 14 16 18 Noise Figure vs. Temperature 36 28 +25 C +85 C -55 C 24 -2 INPUT POWER (dBm) Output IP3 vs. Temperature 20 +25 C +85 C -55 C 6 4 2 16 0 6 8 10 12 14 16 18 6 8 FREQUENCY (GHz) 0 22 -10 ISOLATION (dB) 20 18 16 Gain P1dB Psat 12 12 14 Reverse Isolation vs. Temperature 24 14 10 FREQUENCY (GHz) Gain & Power vs. Supply Voltage @ 11 GHz 10 2.7 +25 C +85 C -55 C -20 -30 -40 -50 -60 3 3.3 3.6 3.9 4.2 Vdd (V) 3 - 10 6 Pout (dBm) Gain (dB) PAE (%) 25 INPUT POWER (dBm) GAIN (dB), P1dB (dBm), Psat (dBm) LINEAR & POWER AMPLIFIERS - CHIP 3 Pout (dBm), GAIN (dB), PAE (%) 30 4.5 4.8 5.1 5.4 6 8 10 12 14 16 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 18 HMC441 v06.0508 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6 - 18 GHz 210 30 180 20 120 15 90 60 10 Gain P1dB Psat IP3 5 30 0 0 -1 3 150 Idd 25 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0 Vgg1, Vgg2 Gate Voltage (V) Absolute Maximum Ratings Typical Supply Current vs. Vdd Drain Bias Voltage (Vdd1, Vdd2) +5.5 Vdc Vdd (V) Idd (mA) Gate Bias Voltage (Vgg1,Vgg2) -8 to 0 Vdc +4.5 88 RF Input Power (RFIN)(Vdd = +5Vdc) +20 dBm +5.0 90 Channel Temperature 175 °C +5.5 92 +2.7 80 +3.0 82 +3.3 83 Continuous Pdiss (T= 85 °C) (derate 8.5 mW/°C above 85 °C) 0.76 W Thermal Resistance (channel to die bottom) 118 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C Note: Amplifi er will operate over full voltage ranges shown above ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com LINEAR & POWER AMPLIFIERS - CHIP 35 Idd (mA) GAIN (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) Gain, Power & Output IP3 vs. Gate Voltage @ 12 GHz 3 - 11 HMC441 v06.0508 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6 - 18 GHz Outline Drawing LINEAR & POWER AMPLIFIERS - CHIP 3 3 - 12 NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND IS .004” SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. Die Packaging Information [1] Standard Alternate GP-2 (Gel Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. Pad Descriptions Pad Number Function Description 1 RFIN This pad is AC coupled and matched to 50 Ohms. 2, 3 Vdd1, Vdd2 Power Supply Voltage for the amplifier. An external bypass capacitor of 100 pF is required. 4 RFOUT This pad is AC coupled and matched to 50 Ohms. 5, 6 Vgg1, Vgg2 Optional gate control for amplifier. If left open, the amplifier will run at standard current. Negative voltage applied will reduce current. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC441 v06.0508 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6 - 18 GHz (a) Assembly for Single Supply Voltage Operation LINEAR & POWER AMPLIFIERS - CHIP 3 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 - 13 HMC441 v06.0508 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6 - 18 GHz (b) Assembly with Optional Gate Bias Voltage Operation LINEAR & POWER AMPLIFIERS - CHIP 3 3 - 14 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC441 v06.0508 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6 - 18 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: strikes. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Follow ESD precautions to protect against ESD Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. 3 LINEAR & POWER AMPLIFIERS - CHIP The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 - 15