HMC498 v02.0110 LINEAR & POWER AMPLIFIERS - CHIP 3 GaAs pHEMT MMIC POWER AMPLIFIER, 17 - 24 GHz Typical Applications Features The HMC498 is ideal for: Output IP3: +34 dBm • Point-to-Point Radios Saturated Power: +27 dBm @ 25% PAE • Point-to-Multi-Point Radios Gain: 24 dB • VSAT Supply Voltage: +5V • Military & Space 50 Ohm Matched Input/Output Die Size: 2.38 x 1.46 x 0.1 mm General Description Functional Diagram The HMC498 is a high dynamic range GaAs pHEMT MMIC Power Amplifier which operates between 17 and 24 GHz. The HMC498 provides 24 dB of gain, +27 dBm of saturated power and 25% PAE from a +5V supply voltage. The HMC498 amplifier can easily be integrated into Multi-Chip-Modules (MCMs) due to its small size. All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils). Electrical Specifi cations, TA = +25° C, Vdd = 5V, Idd = 250mA* Parameter Min. Frequency Range Gain 20 Gain Variation Over Temperature Input Return Loss Max. Min. 23 28 0.03 0.04 21 Max. Min. 24 28 0.03 0.04 20 22 Max. 25 21 23 28 dB 0.03 0.04 dB/ °C dB 15 dB 24 dBm Saturated Output Power (Psat) 27 26.5 25.5 dBm Output Third Order Intercept (IP3) 34 34 34 dBm Noise Figure 3.5 Supply Current (Idd)(Vdd = 5V, Vgg = -0.8V Typ.) 250 4.0 275 250 4.5 275 250 dB 275 * Adjust Vgg between -2 to 0V to achieve Idd = 250mA typical. 3 - 50 Units GHz 8 18 23.5 Typ. 22 - 24 11 20 20 Typ. 19 - 22 11 Output Return Loss Output Power for 1 dB Compression (P1dB) Typ. 17 - 19 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com mA HMC498 v02.0110 GaAs pHEMT MMIC POWER AMPLIFIER, 17 - 24 GHz Broadband Gain & Return Loss Gain vs. Temperature 30 30 26 10 0 3 22 18 -10 +25 C +85 C -55 C 14 -20 10 -30 12 14 16 18 20 22 24 26 16 28 17 18 Input Return Loss vs. Temperature 21 22 23 24 25 0 -5 RETURN LOSS (dB) +25 C +85 C -55 C -5 RETURN LOSS (dB) 20 Output Return Loss vs. Temperature 0 -10 -15 -20 +25 C +85 C -55 C -10 -15 -20 -25 -30 -25 16 17 18 19 20 21 22 23 24 16 25 17 18 19 20 21 22 23 24 25 23 24 25 FREQUENCY (GHz) FREQUENCY (GHz) P1dB vs. Temperature Psat vs. Temperature 30 30 26 26 Psat (dBm) P1dB (dBm) 19 FREQUENCY (GHz) FREQUENCY (GHz) 22 +25 C +85 C -55 C 18 14 LINEAR & POWER AMPLIFIERS - CHIP S21 S11 S22 GAIN (dB) RESPONSE (dB) 20 22 +25 C +85 C -55 C 18 14 10 10 16 17 18 19 20 21 22 FREQUENCY (GHz) 23 24 25 16 17 18 19 20 21 22 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 - 51 HMC498 v02.0110 GaAs pHEMT MMIC POWER AMPLIFIER, 17 - 24 GHz Noise Figure vs. Temperature 10 36 8 NOISE FIGURE (dB) 40 32 +25 C +85 C -55 C 28 24 +25 C +85 C -55 C 6 4 2 20 0 16 17 18 19 20 21 22 23 24 25 16 17 18 19 FREQUENCY (GHz) 21 22 23 25 24 25 0 -10 ISOLATION (dB) 26 22 Gain P1dB Psat 18 -20 +25 C +85 C -55 C -30 -40 -50 14 -60 10 -70 3 3.5 4 4.5 5 16 5.5 17 18 19 Vdd Supply Voltage (V) 20 21 22 23 FREQUENCY (GHz) Power Compression @ 20 GHz Power Compression @ 24 GHz 30 30 Pout (dBm), GAIN (dB), PAE (%) 27 24 21 18 15 12 Pout (dBm) Gain (dB) PAE (%) 9 6 25 20 15 10 Pout (dBm) Gain (dB) 5 3 0 -10 PAE (%) -8 -6 -4 -2 0 2 INPUT POWER (dBm) 3 - 52 24 Reverse Isolation vs. Temperature 30 GAIN (dB), P1dB (dBm), Psat (dBm) 20 FREQUENCY (GHz) Gain & Power vs. Supply Voltage@ 20 GHz, Idd= 250mA Pout (dBm), GAIN (dB), PAE (%) LINEAR & POWER AMPLIFIERS - CHIP 3 IP3 (dBm) Output IP3 vs. Temperature 4 6 8 10 0 -10 -8 -6 -4 -2 0 2 4 6 INPUT POWER (dBm) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 10 HMC498 v02.0110 GaAs pHEMT MMIC POWER AMPLIFIER, 17 - 24 GHz Typical Supply Current vs. Vdd Drain Bias Voltage (Vdd1, Vdd2, Vdd3) +5.5V Gate Bias Voltage (Vgg) -4 to 0V Vdd (V) Idd (mA) +4.5 241 RF Input Power (RFIN)(Vdd = +5V) +10 dBm +5.0 250 Channel Temperature 175 °C +5.5 258 Continuous Pdiss (T= 85 °C) (derate 29 mW/°C above 85 °C) 2.65 W +3.0 240 +3.5 250 Thermal Resistance (channel to die bottom) 34 °C/W +4.0 259 Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C ESD Sensitivity (HBM) Class 1A Note: Amplifi er will operate over full voltage ranges shown above. Vgg adjusted to achieve Idd= 250mA at +5V and +3.5V. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard Alternate GP-2 (Gel Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 3 LINEAR & POWER AMPLIFIERS - CHIP Absolute Maximum Ratings NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND IS .004” SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 - 53 HMC498 v02.0110 GaAs pHEMT MMIC POWER AMPLIFIER, 17 - 24 GHz Pad Descriptions Pad Number Function Description 1 RFIN This pad is AC coupled and matched to 50 Ohms. 2-4 Vdd1, Vdd2, Vdd3 Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF and 0.01 μF are required. 5 RFOUT This pad is AC coupled and matched to 50 Ohms. 6 Vgg Gate control for amplifier. Adjust to achieve Idd of 250mA. Please follow “MMIC Amplifier Biasing Procedure” Application Note. External bypass capacitors of 100 pF and 0.01 μF are required. Die Bottom GND Die bottom must be connected to RF/DC ground. LINEAR & POWER AMPLIFIERS - CHIP 3 3 - 54 Interface Schematic Assembly Diagram For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC498 v02.0110 GaAs pHEMT MMIC POWER AMPLIFIER, 17 - 24 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. RF Ground Plane Static Sensitivity: strikes. Follow ESD precautions to protect against ESD Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. 0.150mm (0.005”) Thick Moly Tab General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. 3 LINEAR & POWER AMPLIFIERS - CHIP The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 - 55