HMC545 / 545E v00.0905 GaAs MMIC SPDT SWITCH, DC - 3 GHz Typical Applications Features The HMC545 / HMC545E is ideal for: Low Insertion Loss: 0.25 dB • Cellular/3G Infrastructure High Input IP3: +65 dBm • Private Mobile Radio Handsets Low DC Power Consumption • WLAN, WiMAX & WiBro Positive Control: 0/+3V to 0/+8V • Automotive Telematics Ultra Small Package: SOT26 • Test Equipment Functional Diagram General Description The HMC545 and HMC545E are low-cost SPDT switches in 6-lead SOT26 plastic packages for use in general switching applications which require very low insertion loss and very small size. With 0.25 dB typical loss, these devices can control signals from DC to 3.0 GHz and are especially suited for IF and RF applications including Cellular/3G, ISM, automotive and portables. The design provides exceptional insertion loss performance, ideal for filter and receiver switching. RF1 and RF2 are reflective shorts when “Off”. The two control voltages require a minimal amount of DC current and offer compatibility with CMOS and some TTL logic families. SWITCHES - SMT 10 Electrical Specifi cations TA = +25° C, Vctl = 0/+5 Vdc (Unless Otherwise Stated), 50 Ohm System Parameter Frequency Insertion Loss DC - 1.0 GHz DC - 2.5 GHz DC - 3.0 GHz Isolation DC - 2.2 GHz DC - 2.5 GHz DC - 3.0 GHz Return Loss DC - 1.0 GHz DC - 2.0 GHz DC - 2.5 GHz DC - 3.0 GHz Input Power for 1 dB Compression Vctl = 0/+3V Vctl = 0/+5V Vctl = 0/+8V 0.5 - 3.0 GHz Input Third Order Intercept (Two-tone Input Power = +17 dBm Each Tone) Vctl = 0/+3V Vctl = 0/+5V Vctl = 0/+8V 0.5 - 3.0 GHz Switching Characteristics 26 22 20 23 29 32 Typ. Max. Units 0.25 0.3 0.4 0.4 0.5 0.7 dB dB dB 31 27 24 dB dB dB 25 21 19 17 dB dB dB dB 27 33 36 dBm dBm dBm 45 65 65 dBm dBm dBm 70 90 ns ns DC - 3.0 GHz tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) 10 - 306 Min. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC545 / 545E v00.0905 GaAs MMIC SPDT SWITCH, DC - 3 GHz Insertion Loss Return Loss 0 0 -0.5 -10 RETURN LOSS (dB) INSERTION LOSS (dB) -5 -1 +25 C +85 C -40 C -1.5 -15 -20 -25 RFC RF1, RF2 ON -30 -35 -40 0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.5 1 FREQUENCY (GHz) Isolation Between Ports RFC and RF1/RF2 0 0 -5 RF1 RF2 ISOLATION (dB) ISOLATION (dB) 2.5 3 3.5 4 10 RF1 ON RF2 ON -10 -15 -20 -25 -30 -15 -20 -25 -30 -35 -35 -40 -40 -45 -45 0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.5 FREQUENCY (GHz) 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) Input P0.1dB vs. Vctl Input P1dB vs. Vctl 40 40 35 35 30 30 INPUT P1dB (dBm) INPUT P0.1dB (dBm) 2 Isolation Between Ports RF1 and RF2 -5 -10 1.5 FREQUENCY (GHz) SWITCHES - SMT -2 25 20 15 +3V +5V +8V 10 25 20 15 +3V +5V +8V 10 5 5 0 0 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3 0 0.5 1 1.5 2 2.5 3 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 10 - 307 HMC545 / 545E v00.0905 GaAs MMIC SPDT SWITCH, DC - 3 GHz 40 35 35 30 25 20 +3V +5V +8V 15 10 0.01 30 25 +3V +5V +8V 20 15 0.1 1 10 0.01 0.1 FREQUENCY (GHz) 10 1 FREQUENCY (GHz) Input Third Order Intercept Point vs. Control Voltage INPUT IP3 (dBm) SWITCHES - SMT Low Frequency Input P1dB vs. Vctl 40 INPUT P1dB (dBm) INPUT P0.1dB (dBm) Low Frequency Input P0.1dB vs. Vctl Absolute Maximum Ratings 75 RF Input Power (Vctl = 0/+8V) +34 dBm 70 Control Voltage Range (A & B) -0.2 to +12 Vdc 65 Hot Switch Power Level (Vctl = 0/+8V) +32 dBm 60 55 Channel Temperature 150 °C 50 Continuous Pdiss (T= 85 °C) (derate 3.5 mW/ °C above 85°C) 0.23 W Thermal Resistance 282 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ESD Sensitivity (HBM) Class 1A 45 40 +3V +5V +8V 35 30 0.5 1 1.5 2 2.5 3 DC blocks are required at ports RFC, RF1 and RF2. FREQUENCY (GHz) ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Insertion Loss, T = +25 °C 0 INSERTION LOSS (dB) -0.05 Truth Table -0.1 Control Input -0.15 -0.2 -0.25 B RFC to RF1 RFC to RF2 Low High Off On High Low On Off -0.3 -0.35 Control Voltages -0.4 0 0.5 1 1.5 2 FREQUENCY (GHz) 10 - 308 Control Current A 2.5 3 State Bias Condition Low 0 to 0.2 Vdc @ 1 µA Typical High +3 Vdc @ 0.5 µA Typical to +8 Vdc @ 3 µA Typical (±0.2 Vdc) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC545 / 545E v00.0905 GaAs MMIC SPDT SWITCH, DC - 3 GHz Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. SWITCHES - SMT 10 5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC545 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 HMC545E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 Package Marking [1] H545 [2] 545E [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 10 - 309 HMC545 / 545E v00.0905 GaAs MMIC SPDT SWITCH, DC - 3 GHz Typical Application Circuit SWITCHES - SMT 10 Notes: 1. Set logic gate Vdd = +3V to +5V and use HCT series logic to provide a TTL driver interface. 2. Control inputs A/B can be driven directly with CMOS logic (HC) with Vdd of +3V to +8V applied to the CMOS logic gates. 3. DC Blocking capacitors are required for each RF port as shown. Capacitor value determines lowest frequency of operation. 4. Highest RF signal power capability is achieved with Vdd = +8V and A/B set to 0/+8V. Pin Descriptions 10 - 310 Pin Number Function Description 1, 3, 5 RF2, RF1, RFC These pins are DC coupled and matched to 50 Ohms. Blocking capacitors are required. 2 GND This pin must be connected to RF/DC ground. 4 B See truth and control voltage tables. 6 A See truth and control voltage tables. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC545 / 545E v00.0905 GaAs MMIC SPDT SWITCH, DC - 3 GHz Evaluation PCB SWITCHES - SMT 10 List of Materials for Evaluation PCB 101675 [1] Item Description J1 - J5 PCB Mount SMA RF Connector J6 - J8 DC Pin C1 - C5 330 pF capacitor, 0402 Pkg. U1 HMC545 / HMC545E SPDT Switch PCB [2] 101659 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 The circuit board used in the final application should be generated with proper RF circuit design techniques. Signal lines at the RF port should have 50 ohm impedance and the package ground leads should be connected directly to the ground plane similar to that shown above. The evaluation circuit board shown above is available from Hittite Microwave Corporation upon request. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 10 - 311