HMC659LC5 v01.0308 LINEAR & POWER AMPLIFIERS - SMT 6 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz Typical Applications Features The HMC659LC5 wideband PA is ideal for: P1dB Output Power: +27.5 dBm • Telecom Infrastructure Gain: 19 dB • Microwave Radio & VSAT Output IP3: +35 dBm • Military & Space Supply Voltage: +8V @ 300 mA • Test Instrumentation 50 Ohm Matched Input/Output • Fiber Optics 32 Lead Ceramic 5x5mm SMT Package: 25mm2 Functional Diagram General Description The HMC659LC5 is a GaAs MMIC PHEMT Distributed Power Amplifier which is housed in a leadless 5x5 mm RoHS compliant ceramic SMT package operating between DC and 15 GHz. The amplifier provides 19 dB of gain, +35 dBm output IP3 and +27.5 dBm of output power at 1 dB gain compression, while requiring 300mA from a +8V supply. Gain flatness is excellent at ±1.4 dB from DC - 15 GHz making the HMC659LC5 ideal for EW, ECM, Radar and test equipment applications. The HMC659LC5 amplifier I/Os are internally matched to 50 ohms with no external components. The HMC659LC5 is compatible with high volume surface mount manufacturing techniques. Electrical Specifi cations, TA = +25° C, Vdd= +8V, Vgg2= +3V, Idd= 300 mA* Parameter Min. Frequency Range Gain Typ. Max. Min. DC - 6 16 19 Typ. Max. Min. 6 - 11 15 18 14 Typ. Max. GHz 17 dB Gain Flatness ± 0.7 ± 0.4 ± 0.7 dB Gain Variation Over Temperature 0.015 0.019 0.022 dB/ °C 20 18 17 dB Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) 19 23.5 26.5 28.0 20 24.5 27.5 28.5 23.5 15 dB 26.5 dBm 27.5 dBm Output Third Order Intercept (IP3) 35 32 29 dBm Noise Figure 3.0 2.5 3.5 dB Supply Current (Idd) (Vdd= 8V, Vgg1= -0.8V Typ.) 300 300 300 mA * Adjust Vgg1 between -2 to 0V to achieve Idd= 300 mA typical. 6 - 332 Units 11 - 15 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC659LC5 v01.0308 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz Gain vs. Temperature 22 20 20 15 18 10 16 5 S21 S11 S22 0 -5 12 10 -10 8 -15 6 -20 4 -25 2 -30 6 14 +25C +85C -40C 0 0 5 10 15 20 0 2 4 FREQUENCY (GHz) 10 12 14 16 0 0 -5 -10 +25C +85C -40C -5 +25C +85C -40C RETURN LOSS (dB) RETURN LOSS (dB) 8 Output Return Loss vs. Temperature Input Return Loss vs. Temperature -15 -20 -10 -15 -20 -25 -30 -25 0 2 4 6 8 10 12 14 16 0 2 4 FREQUENCY (GHz) 6 8 10 12 14 16 12 14 16 FREQUENCY (GHz) Reverse Isolation vs. Temperature Noise Figure vs. Temperature 7 0 6 -10 +25C +85C -40C -20 NOISE FIGURE (dB) ISOLATION (dB) 6 FREQUENCY (GHz) LINEAR & POWER AMPLIFIERS - SMT 25 GAIN (dB) RESPONSE (dB) Gain & Return Loss -30 -40 -50 +25C +85C -40C 5 4 3 2 1 -60 0 0 2 4 6 8 10 FREQUENCY (GHz) 12 14 16 0 2 4 6 8 10 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 6 - 333 HMC659LC5 v01.0308 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz Psat vs. Temperature 32 30 30 28 28 Psat (dBm) 32 26 +25C +85C -40C 24 26 +25C +85C -40C 24 22 22 20 20 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0 1 2 3 4 5 FREQUENCY (GHz) 6 7 8 9 10 11 12 13 14 15 FREQUENCY (GHz) Output IP3 vs. Temperature Output IP3 vs. Output Power @ 5GHz 50 45 +25C +85C -40C 7.5V 8.0V 8.5V 45 IP3 (dBm) 40 35 30 40 35 25 20 30 0 2 4 6 8 10 12 14 0 16 2 4 6 FREQUENCY (GHz) 8 10 12 14 16 18 20 22 24 OUTPUT POWER (dBm) Gain, Power & Output IP3 vs. Supply Voltage @ 7 GHz, Fixed Vgg Gain (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) IP3 (dBm) LINEAR & POWER AMPLIFIERS - SMT 6 P1dB (dBm) Output P1dB vs. Temperature 40 30 20 Gain P1dB 10 7.5 8 Psat IP3 8.5 Vdd (V) 6 - 334 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 26 HMC659LC5 v01.0308 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz Power Compression @ 2 GHz Power Compression @ 7 GHz 32 28 24 20 16 12 8 Pout Gain PAE 4 0 28 24 6 20 16 12 8 Pout Gain PAE 4 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0 1 2 3 INPUT POWER (dBm) 5 6 7 8 9 10 11 12 13 14 15 INPUT POWER (dBm) Power Compression @ 15 GHz Power Dissipation 5 32 28 24 20 16 12 8 Pout Gain PAE 4 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 POWER DISSIPATION (W) Pout (dBm), GAIN (dB), PAE (%) 4 4 3 2 Max Pdis @ 85C 2 GHz 12 GHz 1 0 -10 -5 INPUT POWER (dBm) Absolute Maximum Ratings Drain Bias Voltage (Vdd) 9 Vdc Gate Bias Voltage (Vgg1) -2 to 0 Vdc 0 5 10 15 INPUT POWER (dBm) Typical Supply Current vs. Vdd Vdd (V) Idd (mA) 7.5 299 Gate Bias Voltage (Vgg2) +2V to +4V 8.0 300 RF Input Power (RFIN)(Vdd = +8 Vdc) +20 dBm 8.5 301 Channel Temperature 175 °C Continuous Pdiss (T= 85 °C) (derate 37 mW/°C above 85 °C) 3.3 W Thermal Resistance (channel to ground paddle) 27.3 °C/W Storage Temperature -65 to 150 °C Operating Temperature -40 to 85 °C LINEAR & POWER AMPLIFIERS - SMT Pout (dBm), GAIN (dB), PAE (%) Pout (dBm), GAIN (dB), PAE (%) 32 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 6 - 335 HMC659LC5 v01.0308 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz Outline Drawing LINEAR & POWER AMPLIFIERS - SMT 6 6 - 336 NOTES: 1. PACKAGE BODY MATERIAL: ALUMINA 2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES GOLD OVER 50 MICROINCHES MINIMUM NICKEL. 3. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 5. CHARACTERS TO BE LASER MARKED WITH .018”MIN to .030”MAX HEIGHT REQUIREMENTS. UTILIZE MAXIMUM CHARACTER HEIGHT BASED ON LID DIMENSIONS AND BEST FIT. LOCATE APPROX. AS SHOWN. 6. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM -C7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC659LC5 v01.0308 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz Pin Descriptions Function Description 1, 2, 4, 7 - 12, 14, 16 - 20, 23 - 30 N/C No connection. These pins may be connected to RF ground. Performance will not be affected. 3 Vgg2 Gate Control 2 for amplifier. +3V should be applied to Vgg2 for nominal operation. 5 RFIN This pad is DC coupled and matched to 50 Ohms. 13 ACG3 Low frequency termination. Attach bypass capacitor per application circuit herein. 15 Vgg1 Gate Control 1 for amplifier. 22 RFOUT & Vdd RF output for amplifier. Connect the DC bias (Vdd) network to provide drain current (Idd). See application circuit herein. 31 ACG2 Interface Schematic Low frequency termination. Attach bypass capacitor per application circuit herein. 32 ACG1 6, 21 Ground Paddle GND Ground paddle must be connected to RF/DC ground. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 6 LINEAR & POWER AMPLIFIERS - SMT Pin Number 6 - 337 HMC659LC5 v01.0308 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz Application Circuit LINEAR & POWER AMPLIFIERS - SMT 6 6 - 338 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC659LC5 v01.0308 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz Evaluation PCB List of Materials for Evaluation PCB 117494 [1] Item Description J1, J2 SMA-SRI-NS J3, J4 2mm Molex Header C1, C2 4.7 μF Capacitor C3 0.1 μF Capacitor, 0603 Pkg. C4, C5 100 pF Capacitor, 0402 Pkg. C6, C7 10k pF Capactor, 0402 Pkg. C8, C9 0.47 μF Capacitor, 0402 Pkg U1 HMC659LC5 PCB [2] 117492 Evaluation PCB The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. LINEAR & POWER AMPLIFIERS - SMT 6 [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 6 - 339