HMC717LP3 / 717LP3E v02.0809 Amplifiers - Low Noise - SMT 7 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 4.8 - 6.0 GHz Typical Applications Features The HMC717LP3(E) is ideal for: Noise Figure: 1.1 dB • Fixed Wireless and LTE/WiMAX/4G Gain: 16.5 dB • BTS & Infrastructure Output IP3: +31.5 dBm • Repeaters and Femtocells Single Supply: +3V to +5V • Public Safety Radio 16 Lead 3x3mm QFN Package: 9 mm2 • Access Points Functional Diagram General Description The HMC717LP3(E) is a GaAs PHEMT MMIC Low Noise Amplifier that is ideal for fixed wireless and LTE/WiMAX/4G basestation front-end receivers operating between 4.8 and 6.0 GHz. The amplifier has been optimized to provide 1.1 dB noise figure, 16.5 dB gain and +31.5 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent and the LNA requires minimal external matching and bias decoupling components. The HMC717LP3(E) can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application. Electrical Specifications TA = +25° C, Rbias = 2k Ohms for Vdd = 5V, Rbias = 20k Ohms for Vdd = 3V [1] [2] Parameter Vdd = +3V Min. Frequency Range Gain Typ. Vdd = +5V Max. Min. 4.8 - 6.0 12 0.01 Noise Figure 1.25 Max. 4.8 - 6.0 14.3 Gain Variation Over Temperature Typ. 13.5 1.5 Units MHz 16.5 dB 0.01 dB/ °C 1.1 1.4 dB Input Return Loss 13 13 dB Output Return Loss 13 18 dB Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Total Supply Current (Idd) 12 14 15 15 25.5 31 18.5 dBm 19.5 dBm 31.5 40 73 dBm 100 mA [1] Rbias resistor sets current, see application circuit herein [2] Vdd = Vdd1 = Vdd2 7-1 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC717LP3 / 717LP3E v02.0809 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 4.8 - 6.0 GHz Broadband Gain & Return Loss [1][2] 7 Gain vs. Temperature [1] 25 S21 21 10 5 GAIN (dB) RESPONSE (dB) 15 S11 0 -5 -10 +25C +85C -40C 9 Vdd=5V Vdd=3V -25 S22 -30 1 2 3 4 5 6 7 FREQUENCY (GHz) 8 9 5 4.5 10 Gain vs. Temperature [2] RETURN LOSS (dB) 17 13 +25C +85C -40C 9 4.9 5.3 5.7 FREQUENCY (GHz) 6.1 6.1 6.5 +25C +85C -40C -5 -10 -15 -20 4.5 6.5 Output Return Loss vs. Temperature [1] 4.9 5.3 5.7 FREQUENCY (GHz) 6.1 6.5 Reverse Isolation vs. Temperature [1] 0 -20 -25 +25C +85C -40C ISOLATION (dB) -5 -10 -15 -20 -25 4.5 5.3 5.7 FREQUENCY (GHz) 0 21 5 4.5 4.9 Input Return Loss vs. Temperature [1] 25 GAIN (dB) 13 -15 -20 RETURN LOSS (dB) 17 Amplifiers - Low Noise - SMT 25 20 -30 -35 +25C +85C -40C -40 -45 4.9 5.3 5.7 FREQUENCY (GHz) [1] Vdd = 5V, Rbias = 2kΩ 6.1 6.5 -50 4.5 4.9 5.3 5.7 FREQUENCY (GHz) 6.1 6.5 [2] Vdd = 3V, Rbias = 20kΩ For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-2 HMC717LP3 / 717LP3E v02.0809 7 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 4.8 - 6.0 GHz Noise Figure vs. Temperature [1] [2] [4] P1dB vs. Temperature [1] [2] 24 +85C P1dB (dBm) NOISE FIGURE (dB) 20 1.5 1.2 0.9 0.6 +25C 0 4.5 4.9 16 14 Vdd=3V 5.3 5.7 FREQUENCY (GHz) 6.1 8 4.5 6.5 4.9 5.3 5.7 FREQUENCY (GHz) 6.1 6.5 Output IP3 vs. Temperature [1] [2] 24 40 Vdd=5V 18 31 IP3 (dBm) 34 16 14 12 4.9 5.3 5.7 FREQUENCY (GHz) 6.1 28 25 22 +25C +85C -40C Vdd=3V 8 4.5 Vdd=5V 37 20 10 +25C +85C -40C 10 Psat vs. Temperature [1] [2] +25C +85C -40C 19 Vdd=3V 16 4.5 6.5 Output IP3 and Total Supply Current vs. Supply Voltage @ 4800 MHz [3] 4.9 5.3 5.7 FREQUENCY (GHz) 6.1 6.5 Output IP3 and Total Supply Current vs. Supply Voltage @ 5900 MHz [3] 36 95 34 80 34 80 32 65 32 65 30 50 30 50 28 35 28 20 26 5 24 Idd IP3 26 24 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 Voltage Supply (V) IP3 (dBm) 95 2.7 Idd IP3 35 20 5 3.1 3.5 3.9 4.3 4.7 5.1 5.5 Voltage Supply (V) [1] Vdd = 5V, Rbias = 2k Ω [2] Vdd = 3V, Rbias = 20kΩ [3] Rbias = 2kΩ for Vdd = 5V, Rbias = 20kΩ for Vdd = 3V [4] Measurement reference plane shown on evaluation PCB drawing. 7-3 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] Idd (mA) 36 Idd (mA) IP3 (dBm) 18 12 -40C Vdd=5V Vdd=3V 0.3 22 Vdd=5V 22 1.8 Psat (dBm) Amplifiers - Low Noise - SMT 2.1 HMC717LP3 / 717LP3E v02.0809 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 4.8 - 6.0 GHz Pout (dBm), GAIN (dB), PAE (%) Pout (dBm), GAIN (dB), PAE (%) 20 15 10 5 0 Pout Gain PAE -5 -10 -20 -15 -10 -5 INPUT POWER (dBm) 0 15 10 5 0 Pout Gain PAE -5 -17 -14 -11 -8 -5 INPUT POWER (dBm) -2 1 4 Power Compression @ 5900 MHz [2] Power Compression @ 5900 MHz [1] 25 Pout (dBm), GAIN (dB), PAE (%) 25 20 15 10 5 0 Pout Gain PAE -5 -10 -20 -16 -12 -8 -4 0 INPUT POWER (dBm) 4 Gain, Power & Noise Figure vs. Supply Voltage @ 4800 MHz [3] 1.6 16 1.3 14 1.2 12 1.1 NF 8 3.5 3.9 4.3 4.7 5.1 Pout Gain PAE -5 -15 -10 -5 INPUT POWER (dBm) 0 5 [2] Vdd = 3V, Rbias = 20kΩ 1.6 P1dB Gain 1.5 18 1.4 16 1.3 14 1.2 1 12 0.9 10 5.5 Voltage Supply (V) [1] Vdd = 5V, Rbias = 2k Ω 0 2.7 NOISE FIGURE (dB) 1.4 3.1 5 20 NOISE FIGURE (dB) 18 2.7 10 22 1.5 P1dB Gain 10 15 Gain, Power & Noise Figure vs. Supply Voltage @ 5900 MHz [3] 22 20 20 -10 -20 8 Gain (dB) & P1dB (dBm) Pout (dBm), GAIN (dB), PAE (%) 20 -10 -20 5 Amplifiers - Low Noise - SMT 25 25 Gain (dB) & P1dB (dBm) 7 Power Compression @ 4800 MHz [2] Power Compression @ 4800 MHz [1] 1.1 NF 1 3.1 3.5 3.9 4.3 4.7 5.1 5.5 Voltage Supply (V) [3] Rbias = 2kΩ for Vdd = 5V, Rbias = 20kΩ for Vdd = 3V For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-4 HMC717LP3 / 717LP3E v02.0809 7 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 4.8 - 6.0 GHz Gain, Noise Figure & Rbias @ 4800 MHz Output IP3 vs. Rbias @ 4800 MHz Vdd=3V Vdd=5V 30 GAIN (dB) IP3 (dBm) 26 24 22 1000 10000 Rbias (Ohms) 1.6 8 1.4 5 1.2 1 1000 10000 100000 Gain, Noise Figure & Rbias @ 5900 MHz 1.7 18 Vdd=3V Vdd=5V GAIN (dB) 29 26 1000 10000 Rbias (Ohms) Vdd=3V Vdd=5V 16 100000 1.6 14 1.5 12 1.4 10 1.3 8 1.2 1.1 6 100 1000 10000 100000 Rbias (Ohms) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] NOISE FIGURE (dB) IP3 (dBm) 11 Rbias (Ohms) 23 7-5 1.8 100 35 32 2 14 2 100000 Output IP3 vs. Rbias @ 5900 MHz 20 100 Vdd=3V Vdd=5V 17 28 20 100 2.2 20 NOISE FIGURE (dB) Amplifiers - Low Noise - SMT 32 HMC717LP3 / 717LP3E v02.0809 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 4.8 - 6.0 GHz Vdd (V) 3V Rbias (Ohms) Max Recommended 2k 20 2k [1] Open Circuit 4.7k 26 20k 31 150 [2] 5V Idd (mA) Min Open Circuit 261 50 1k 65 2k 73 [1] With Vdd= 3V and Rbias < 2k Ω may result in the part becoming conditionally stable which is not recommended. [2] With Vdd = 5V and Rbias<150Ω may result in the part becoming conditionally stable which is not recommended. Absolute Maximum Ratings Drain Bias Voltage (Vdd) +5.5V RF Input Power (RFIN) (Vdd = +5 Vdc) +10 dBm Channel Temperature 150 °C Continuous Pdiss (T= 85 °C) (derate 7.73 mW/°C above 85 °C) 0.5 W Thermal Resistance (channel to ground paddle) 129.5 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ESD Sensitivity (HBM) Class 1A ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Amplifiers - Low Noise - SMT 7 Absolute Bias Resistor Range & Recommended Bias Resistor Values Typical Supply Current vs. Supply Voltage (Rbias = 2kΩ for Vdd = 5V, Rbias = 20kΩ for Vdd = 3V) Vdd (V) Idd (mA) 2.7 23 3.0 31 3.3 39 4.5 60 5.0 73 5.5 85 Note: Amplifier will operate over full voltage ranges shown above. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-6 HMC717LP3 / 717LP3E v02.0809 Outline Drawing Amplifiers - Low Noise - SMT 7 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 4.8 - 6.0 GHz NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC717LP3 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] HMC717LP3E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] Package Marking [3] 717 XXXX 717 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX 7-7 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC717LP3 / 717LP3E v02.0809 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 4.8 - 6.0 GHz Function Description 1, 3 - 7, 9, 10, 12, 14, 16 Pin Number N/C No connection required. These pins may be connected to RF/DC ground without affecting performance. 2 RFIN This pin is DC coupled See the application circuit for off-chip component. 8 BIAS This pin is used to set the DC current of the amplifier by selection of the external bias resistor. See application circuit. 11 RFOUT This pin is AC coupled and matched to 50 Ohms 13, 15 Vdd2, Vdd1 Power supply voltage. Bypass capacitors are required. See application circuit. GND Package bottom must be connected to RF/DC ground Interface Schematic For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] Amplifiers - Low Noise - SMT 7 Pin Descriptions 7-8 HMC717LP3 / 717LP3E v02.0809 Application Circuit Amplifiers - Low Noise - SMT 7 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 4.8 - 6.0 GHz 7-9 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC717LP3 / 717LP3E v02.0809 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 4.8 - 6.0 GHz 7 Amplifiers - Low Noise - SMT Evaluation PCB List of Materials for Evaluation PCB 122416 Item J1, J2 Description PCB Mount SMA Connector J3 - J5 DC Pins C1 10 nF Capacitor, 0402 Pkg. C2, C4 1000 pF Capacitor, 0603 Pkg. C3, C5 100 pF Capacitor, 0603 Pkg. C6 1.2 pF Capacitor, 0402 Pkg. R1 2k Ohm Resistor, 0402 Pkg. (Rbias) R2, R3 0 Ohm Resistor, 0402 Pkg. U1 HMC717LP3(E) Amplifier PCB [2] 120586 Evaluation PCB [1] The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7 - 10