HMC903LP3E v02.0810 AMPLIFIERS - LOW NOISE - SMT 7 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 6 - 17 GHz Typical Applications Features This HMC903LP3E is ideal for: Low Noise Figure: 1.7 dB • Point-to-Point Radios High Gain: 18 dB • Point-to-Multi-Point Radios P1dB Output Power: 14 dBm • Military & Space Single Supply Voltage: +3.5 V @ 80 mA • Test Instrumentation Output IP3: +25 dBm 50 Ohm matched Input/Output 16 Lead 3x3mm SMT Package: 9mm² General Description Functional Diagram The HMC903LP3E is a self-biased GaAs MMIC Low Noise Amplifier housed in a leadless 3x3 mm plastic surface mount package. The amplifier operates between 6 and 17 GHz, providing 18 dB of small signal gain, 1.7 dB noise figure, and output IP3 of +25 dBm, while requiring only 80 mA from a +3.5 V supply. The P1dB output power of +14 dBm enables the LNA to function as a LO driver for balanced, I/Q or image reject mixers. The HMC903LP3E also features I/Os that are DC blocked and internally matched to 50 Ohms, making it ideal for high capacity microwave radios and VSAT applications. Electrical Specifications, TA = +25° C, Vdd1 = Vdd2 = +3.5V, Idd = 80 mA [2] Parameter Min. Frequency Range Gain [1] Gain Variation over Temperature Typ. Max. 6 - 16 16.5 Min. Typ. Max. 16 - 17 Units GHz 18.5 18 dB 0.012 0.012 dB / °C Noise Figure [1] 1.7 Input Return Loss 12 11 Output Return Loss 12 14 dB Output Power for 1 dB Compression [1] 14.5 13 dBm Saturated Output Power (Psat) [1] 16.5 16.5 dBm Output Third Order Intercept (IP3) 25 25 dBm Supply Current (Idd) (Vdd = 3.5V, Vgg1 = Vgg2 = Open) 80 2.2 110 2.2 80 2.5 dB dB 110 mA [1] Board loss removed from gain, power and noise figure measurement. [2] Vgg1 = Vgg2 = Open for normal, self-biased operation 7-1 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC903LP3E v02.0810 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 6 - 17 GHz 25 22 GAIN (dB) RESPONSE (dB) 20 S21 S11 S22 5 -5 18 16 +25C +85C -40C 14 -15 12 -25 10 3 5 7 9 11 13 15 17 19 6 8 FREQUENCY (GHz) 14 16 18 Output Return Loss vs. Temperature 0 0 -5 -5 RETURN LOSS (dB) RETURN LOSS (dB) 12 FREQUENCY (GHz) Input Return Loss vs. Temperature -10 -15 +25C +85C -40C -20 10 +25C +85C -40C -10 -15 AMPLIFIERS - LOW NOISE - SMT 24 15 -20 -25 -25 6 8 10 12 14 16 18 6 8 FREQUENCY (GHz) 10 12 14 16 18 16 18 FREQUENCY (GHz) Output IP3 vs. Temperature Noise Figure vs. Temperature [1] 30 6 5 25 +25C +85C -40C 4 IP3 (dBm) NOISE FIGURE (dB) 7 Gain vs. Temperature [1] Broadband Gain & Return Loss [1] 3 20 +25C +85C -40C 15 2 10 1 5 0 6 8 10 12 14 16 18 FREQUENCY (GHz) 6 8 10 12 14 FREQUENCY (GHz) [1] Board loss removed from gain, power and noise figure measurement. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-2 HMC903LP3E v02.0810 Psat vs. Temperature [1] 25 25 20 20 Psat (dBm) P1dB (dBm) P1dB vs. Temperature [1] 15 10 +25C +85C -40C 5 15 +25C +85C -40C 10 5 0 0 6 8 10 12 14 16 18 6 8 10 FREQUENCY (GHz) 14 16 18 Power Compression @ 12 GHz [1] 24 Pout (dBm), GAIN (dB), PAE (%) 0 -10 +25C +85C -40C -20 -30 -40 -50 -60 6 8 10 12 14 16 20 16 12 4 0 -4 -20 18 Pout Gain PAE 8 -17 -14 FREQUENCY (GHz) -5 -2 1 4 20 6 18 5 16 4 14 3 12 2 10 1 5 0 0 Gain IP3 4 Vdd (V) GAIN (dB), IP3 (dBm) 25 NOISE FIGURE (dB) 8 120 30 100 20 80 15 60 10 40 -0.7 20 Idd 0 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0 Vgg1, Vgg2 Gate Volltage (Vdc) [1] Board loss removed from gain, power and noise figure measurement. [2] Board loss removed from gain measurement [3] Data taken at Vdd1 = Vdd2 = 3V 7-3 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] Idd (mA) 7 3.5 -8 Gain, Output IP3 & Idd vs. Gate Voltage @ 12 GHz [2][3] 22 3 -11 INPUT POWER (dBm) Gain, Noise Figure & Power vs. Supply Voltage @ 12 GHz [1] GAIN (dB), P1dB (dBm) 12 FREQUENCY (GHz) Reverse Isolation vs. Temperature ISOLATION (dB) AMPLIFIERS - LOW NOISE - SMT 7 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 6 - 17 GHz HMC903LP3E v02.0810 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 6 - 17 GHz 94 Drain Bias Voltage +4.5V 92 RF Input Power +10 dBm 90 Gate Bias Voltage, Vgg1 -0.8V to +0.2V 88 Gate Bias Voltage, Vgg2 -0.8V to +0.2V Channel Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 6.9 mW/°C above 85 °C) 0.45 W Thermal Resistance (Channel to ground paddle) 144.8 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C 86 84 82 80 78 -30 -27 -24 -21 -18 -15 -12 -9 -6 -3 0 3 INPUT POWER (dBm) ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing AMPLIFIERS - LOW NOISE - SMT Idd (mA) 7 Absolute Maximum Ratings Current vs. Input Power @ 12 GHz NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY. 3. LEAD AND GROUND PADDLE PLATING: 100% MATTE TIN 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 6. PAD BURR LENGTH SHALL BE 0.15mm MAX. PAD BURR HEIGHT SHALL BE 0.05mm MAX. 7. PACKAGE WARP SHALL NOT EXCEED 0.05mm 8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 9. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB LAND PATTERN. Package Information Part Number Package Body Material HMC903LP3E RoHS-compliant Low Stress Injection Molded Plastic Package Marking [1] Lead Finish 100% matte Sn [2] 903 XXXX [1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 260 °C For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-4 HMC903LP3E v02.0810 AMPLIFIERS - LOW NOISE - SMT 7 7-5 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 6 - 17 GHz Pin Descriptions Pin Number Function Description 1, 4, 5, 8, 9, 12, 13, 16 N/C The pins are not connected internally; however, all data shown herein was measured with these pins connected to RF/DC ground externally. 2, 11 GND Package bottom has exposed metal ground paddle that must be connected to RF/DC ground. 3 RFIN This pin is AC coupled and matched to 50 Ohms 6, 7 Vgg1, Vgg2 Optional gate control for amplifier. If left open, the amplifier will run self-biased at standard current. Negative voltage applied will reduce drain current. External capacitors required, see application circuits herein. 10 RFOUT This pin is AC coupled and matched to 50 Ohms 14, 15 Vdd2, Vdd1 Power supply voltage for the amplifier. See assembly for required external components. Interface Schematic For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC903LP3E v02.0810 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 6 - 17 GHz 7 AMPLIFIERS - LOW NOISE - SMT Evaluation PCB List of Material for Evaluation PCB 129798 Item Description J1, J2 SMA Connector J3, J4, J6 - J8 DC Pins C1, C4, C7, C10 100 pF Capacitor, 0402 Pkg. C2, C5, C8, C11 10 KpF Capacitor, 0402 Pkg. C3, C6, C9, C12 4.7 µF Capacitor, Tantalum U1 HMC903LP3E Amplifier PCB [2] 128395 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 or Arlon 25FR [1] The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-6 HMC903LP3E v00.0210 Application Circuit - Standard (Self-Biased) Operation AMPLIFIERS - LOW NOISE - SMT 7 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 6 - 17 GHz Application Circuit - Gate Control, Reduced Current Operation 7-7 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC903LP3E v00.0210 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 6 - 17 GHz 7 AMPLIFIERS - LOW NOISE - SMT Notes: For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-8