HMC939 v00.0910 ATTENUATORS - DIGITAL - CHIP 1 1.0 dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR, 0.1 - 40 GHz Typical Applications Features The HMC939 is ideal for: 1.0 dB LSB Steps to 31 dB • Fiber Optics & Broadband Telecom Single Positive Control Line Per Bit • Microwave Radio & VSAT ±1.0 dB Typical Bit Error • Military Radios, Radar & ECM High Input IP3: +43 dBm • Space Applications Die Size: 2.36 x 1.02 x 0.1 mm Functional Diagram General Description The HMC939 die is a broadband 5-bit GaAs IC digital attenuator MMIC chip. Covering 0.1 to 40 GHz, the insertion loss is less than 5 dB typical. The attenuator bit values are 1.0 (LSB), 2, 4, 8, 16 for a total attenuation of 31 dB. Attenuation accuracy is excellent at less than ±1.0 dB typical step error with an IIP3 of +43 dBm. Five control voltage inputs, toggled between +5V and 0V, are used to select each attenuation state. Electrical Specifications, TA = +25° C, With Vdd = +5V, Vss = -5V & VCTL = 0/ +5V Parameter Frequency (GHz) Typ. Max. Units Insertion Loss 0.1 - 18 GHz 18 - 40 GHz Min. 3.5 6.0 5.0 7.5 dB dB Attenuation Range 0.1 - 40 GHz 31 dB Return Loss (RF1 & RF2, All Atten. States) 0.1 - 40 GHz 12 dB Attenuation Accuracy: (Referenced to Insertion Loss) 1.0 - 15 dB States 16 - 31 dB States 0.1 - 40 GHz 0.1 - 40 GHz ± 0.5 + 5% of Atten. Setting Max ± 0.6 + 6% of Atten. Setting Max Input Power for 0.1 dB Compression 0.1 - 0.5 GHz 0.5 - 40.0 GHz 20 25 dBm dBm Input Third Order Intercept Point (Two-Tone Input Power= 0 dBm Each Tone) 0.1 - 0.5 GHz 0.5 - 40.0 GHz 40 43 dBm dBm 60 90 ns ns Switching Characteristics 0.1 - 40 GHz tRISE, tFALL (10/90% RF) tON/tOFF (50% CTL to 10/90% RF) 1-1 dB dB Idd 0.1 - 40 GHz 3 5 7 mA Iss 0.1 - 40 GHz -4 -6 -8 mA For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC939 v00.0910 1.0 dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR, 0.1 - 40 GHz (Only Major States are Shown) 0 INSERTION LOSS (dB) -2 +25 C +85 C -55 C -3 -4 -5 -6 -7 -8 -9 -5 -10 -15 -20 -25 -30 -35 0 5 10 15 20 25 30 35 40 45 50 0 5 10 15 FREQUENCY (GHz) 20 25 30 35 40 45 50 35 40 45 50 35 40 45 50 FREQUENCY (GHz) Input Return Loss Output Return Loss (Only Major States are Shown) (Only Major States are Shown) 0 -10 -10 RETURN LOSS (dB) 0 -20 -30 -40 -20 -30 ATTENUATORS - DIGITAL - CHIP NORMALIZED ATTENUATION (dB) 0 -1 RETURN LOSS (dB) 1 Normalized Attenuation Insertion Loss vs. Temperature -40 -50 -50 0 5 10 15 20 25 30 35 40 45 50 0 5 10 15 FREQUENCY (GHz) 20 25 30 FREQUENCY (GHz) Bit Error vs. Frequency Bit Error vs. Attenuation State (Only Major States are Shown) 3 2 1.6 2 31 dB 0.8 BIT ERROR (dB) BIT ERROR (dB) 1.2 0.4 0 -0.4 -0.8 10 GHz 20 GHz 40 GHz -1.2 1 0 -1 -2 -1.6 -2 -3 0 4 8 12 16 20 24 ATTENUATION STATE (dB) 28 32 0 5 10 15 20 25 30 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 1-2 HMC939 v00.0910 1 1.0 dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR, 0.1 - 40 GHz Relative Phase vs. Frequency Step Attenuation vs. Attenuation State (Only Major States are Shown) 2.4 STEP ATTENUATION (dB) RELATIVE PHASE (deg) 140 120 100 80 31 dB 60 40 20 -20 10 GHz 20 GHz 40 GHz 2 1.6 1.2 0.8 0.4 0 0 0 5 10 15 20 25 30 35 40 45 -0.4 50 0 4 FREQUENCY (GHz) 8 12 50 IP3 (dBm) 50 40 30 20 15 20 25 28 32 40 +25 C +85 C -40 C 30 10 24 (Minimum Attenuation State) 60 5 20 Input IP3 vs. Temperature 60 0 16 ATTENUATION STATE (dB) Input IP3 Over Major Attenuation States IP3 (dBm) ATTENUATORS - DIGITAL - CHIP 160 30 35 20 0.1 40 1 FREQUENCY (GHz) 10 100 FREQUENCY (GHz) Input Power for 0.1 dB Compression 28 P0.1dB (dBm) 24 20 16 12 8 4 0.01 0.1 1 10 100 FREQUENCY (GHz) 1-3 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC939 1.0 dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR, 0.1 - 40 GHz Vdd +5V @ 5 mA Vss -5V @ 6 mA Control Voltage Input Control Voltage State Bias Condition Low 0 to 0.8V @ 1 µA High 2 to 5V @ 1 µA 1 Truth Table Bias Voltages & Currents Absolute Maximum Ratings RF Input Power (0.5 to 40 GHz) +25 dBm Control Voltage (P0 to P4) Vdd + 0.5V Vdd +7 Vdc Vss -7 Vdc Channel Temperature 150 °C Thermal Resistance (channel to die bottom) 144 °C/W Storage Temperature -65 to + 150 °C Operating Temperature -55 to +85 °C P4 16 dB P3 8 dB P2 4 dB P1 2 dB P0 1 dB Attenuation State RF1 - RF2 High High High High High Reference I.L. High High High High Low 1 dB High High High Low High 2 dB High High Low High High 4 dB High Low High High High 5 dB Low High High High High 16 dB Low Low Low Low Low 31 dB Any Combination of the above states will provide an attenuation approximately equal to the sum of the bits selected. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard Alternate WP-9 (Waffle Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. ATTENUATORS - DIGITAL - CHIP v00.0910 1. ALL DIMENSIONS ARE IN INCHES (MILLIMETERS). 2. TYPICAL BOND PAD IS .004” SQUARE. 3. TYPICAL BOND PAD SPACING IS .006” CENTER TO CENTER EXCEPT AS NOTED. 4. BACKSIDE METALIZATION: GOLD 5. BACKSIDE METAL IS GROUND 6. BOND PAD METALIZATION: GOLD For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 1-4 HMC939 v00.0910 1 Pad Descriptions Pad Number ATTENUATORS - DIGITAL - CHIP 1.0 dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR, 0.1 - 40 GHz Function Description GND Die bottom must be connected to RF ground. 1, 9 RF1, RF2 This pad is DC coupled and matched to 50 Ohm. Blocking capacitors are required if RF line potential is not equal to 0V. 2 Vss Negative Bias -5V 3-7 P0 - P4 See truth table and control voltage table. 8 Vdd Positive Bias +5V Interface Schematic Assembly Diagram 1-5 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC939 1.0 dB LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR, 0.1 - 40 GHz 1 Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: strikes. Follow ESD precautions to protect against ESD Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. RF Ground Plane 0.150mm (0.005”) Thick Moly Tab ATTENUATORS - DIGITAL - CHIP v00.0910 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 1-6