HMC943LP5E v01.0511 Amplifiers - Linear & Power - Chip Amplifiers - Linear & Power - SMT 3 9 GaAs pHEMT MMIC 1.5 WATT POWER AMPLIFIER, 24 - 31.5 GHz Typical Applications Features The HMC943LP5E is ideal for: Saturated Output Power: +34 dBm @ 24% PAE • Point-to-Point Radios High Output IP3: +41 dBm • Point-to-Multi-Point Radios High Gain: 21 dB • VSAT DC Supply: +5.5V @ 1200 mA • Military & Space No External Matching Required 32 Lead 5 x 5 mm SMT Package: 25 mm² Functional Diagram General Description The HMC943LP5E is a four stage GaAs pHEMT MMIC 1.5 Watt Power Amplifier which operates between 24 and 31.5 GHz. The HMC943LP5E provides 21 dB of gain, and +34 dBm of saturated output power and 24% PAE from a +5.5V supply. The high output IP3 of +41 dBm makes the HMC943LP5E ideal for microwave radio applications. The HMC943LP5E amplifier I/Os are internally matched to 50 Ohms and is packaged in a leadless QFN 5 x 5 mm surface mount package and requires no external matching components. Electrical Specifications, TA = +25° C, Vd1 = Vd8 = +5.5V, Idd = 1200 mA [1] Parameter Min. Frequency Range Gain 18 Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Typ. Max. Min. 24 - 26.5 21 16 Max. Units GHz 19 dB 0.03 0.028 dB/ °C 9 9.5 dB 12 29 Typ. 26.5 - 31.5 32 27 12 dB 31 dBm Saturated Output Power (Psat) 33 33 dBm Output Third Order Intercept (IP3)[2] 41 39 dBm 1200 1200 mA Total Supply Current (Idd) [1] Adjust Vg1 and Vg2 between -2 to 0V to achieve Idd = 1200 mA typical. [2] Measurement taken at +5.5V @ 1200 mA, Pout / Tone = +22 dBm 3-1 9 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC943LP5E v01.0511 GaAs pHEMT MMIC 1.5 WATT POWER AMPLIFIER, 24 - 31.5 GHz Broadband Gain & Return Loss vs. Frequency Gain vs. Temperature 30 20 +25C +85C -40C S21 S11 S22 0 GAIN (dB) RESPONSE (dB) 26 10 3 9 22 -10 18 -20 -30 14 20 22 24 26 28 30 32 FREQUENCY (GHz) 34 36 38 23 25 27 28 29 30 31 32 33 34 Output Return Loss vs. Temperature 0 0 +25C +85C -40C +25C +85C -40C -4 RETURN LOSS (dB) -4 -8 -12 -16 -8 -12 -16 -20 -20 23 24 25 26 27 28 29 30 31 32 33 34 23 24 25 FREQUENCY (GHz) 26 27 28 29 30 31 32 33 34 FREQUENCY (GHz) P1dB vs. Temperature P1dB vs. Supply Voltage 37 37 +25C +85C -40C +5.0V +5.5V +6.0V 35 P1dB (dBm) 35 P1dB (dBm) 26 FREQUENCY (GHz) Input Return Loss vs. Temperature RETURN LOSS (dB) 24 33 31 29 Amplifiers - Linear & Power - Chip Amplifiers - Linear & Power - SMT 30 33 31 29 27 27 24 25 26 27 28 29 30 FREQUENCY (GHz) 31 32 33 24 25 26 27 28 29 30 31 32 33 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 3-2 9 HMC943LP5E v01.0511 GaAs pHEMT MMIC 1.5 WATT POWER AMPLIFIER, 24 - 31.5 GHz Psat vs. Temperature Psat vs. Supply Voltage 39 39 Psat (dBm) Psat (dBm) 35 33 35 33 31 29 29 24 25 26 27 28 29 30 31 32 24 33 25 26 P1dB vs. Supply Current (Idd) 28 29 30 31 32 33 31 32 33 Psat vs. Supply Current (Idd) 37 39 1000mA 1200mA 1300mA 1000mA 1200mA 1300mA 37 Psat (dBm) 35 P1dB (dBm) 27 FREQUENCY (GHz) FREQUENCY (GHz) 33 31 29 35 33 31 27 29 24 25 26 27 28 29 30 31 32 33 24 25 26 FREQUENCY (GHz) 27 28 29 30 FREQUENCY (GHz) Output IP3 vs. Temperature, Pout/Tone = +22 dBm Output IP3 vs. Supply Current, Pout/Tone = +22 dBm 50 45 45 40 40 IP3 (dBm) 50 35 +25C +85C -40C 30 35 1000mA 1200mA 1300mA 30 25 25 24 25 26 27 28 29 30 FREQUENCY (GHz) 3-3 9 +5.0V +5.5V +6.0V 37 31 IP3 (dBm) Amplifiers - Linear & Power - Chip Amplifiers - Linear & Power - SMT 3 9 +25C +85C -40C 37 31 32 33 24 25 26 27 28 29 30 31 32 33 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC943LP5E v01.0511 GaAs pHEMT MMIC 1.5 WATT POWER AMPLIFIER, 24 - 31.5 GHz Output IP3 vs. Supply Voltage, Pout/Tone = +22 dBm Output IM3 @ Vdd = +5V 50 60 +5.0V +5.5V +6.0V 50 3 9 IM3 (dBc) IP3 (dBm) 40 40 35 30 20 30 24 GHz 26 GHz 28 GHz 30 GHz 32 GHz 10 25 0 27 28 29 30 31 32 33 34 15 16 17 18 19 FREQUENCY (GHz) 60 50 50 40 40 30 23 24 25 22 23 24 25 24 GHz 26 GHz 28 GHz 30 GHz 32 GHz 10 0 0 15 16 17 18 19 20 21 22 23 24 25 15 16 17 18 19 Pout/TONE (dBm) 32 32 Pout (dBm), GAIN (dB), PAE (%) 36 28 24 20 16 Pout Gain PAE 8 21 Power Compression @ 29 GHz 36 12 20 Pout/TONE (dBm) Power Compression @ 24 GHz Pout (dBm), GAIN (dB), PAE (%) 22 30 20 24 GHz 26 GHz 28 GHz 30 GHz 32 GHz 10 21 Output IM3 @ Vdd = +6V 60 IM3 (dBc) IM3 (dBc) Output IM3 @ Vdd = +5.5V 20 20 Pout/TONE (dBm) 4 0 Pout Gain PAE 28 24 Amplifiers - Linear & Power - Chip Amplifiers - Linear & Power - SMT 45 20 16 12 8 4 0 0 3 6 9 12 INPUT POWER (dBm) 15 18 0 3 6 9 12 15 18 INPUT POWER (dBm) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 3-4 9 HMC943LP5E v01.0511 GaAs pHEMT MMIC 1.5 WATT POWER AMPLIFIER, 24 - 31.5 GHz Power Compression @ 32 GHz Reverse Isolation 0 Pout Gain PAE 32 -10 ISOLATION (dB) 28 24 20 16 12 -20 +25C +85C -40C -30 -40 -50 8 -60 4 0 -70 0 3 6 9 12 15 18 21 27 28 29 INPUT POWER (dBm) 31 32 33 34 Gain & Power vs. Supply Voltage @ 26 GHz 40 Gain (dB), P1dB (dBm), Psat (dBm) 40 35 30 Gain P1dB Psat 25 20 35 30 Gain P1dB Psat 25 20 15 1000 30 FREQUENCY (GHz) Gain & Power vs. Supply Current @ 26 GHz 15 1100 1200 1300 5 5.5 Idd (mA) 6 Vdd (V) Power Dissipation @ 6V, 1200 mA 10 9 POWER DISSIPATION (W) Gain (dB), P1dB (dBm), Psat (dBm) Amplifiers - Linear & Power - Chip Amplifiers - Linear & Power - SMT 3 9 Pout (dBm), GAIN (dB), PAE (%) 36 8 7 6 5 Max Pdis @ 85C 25GHz 26GHz 27GHz 28GHz 29GHz 30GHz 31GHz 32GHz 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 INPUT POWER (dBm) 3-5 9 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC943LP5E v01.0511 GaAs pHEMT MMIC 1.5 WATT POWER AMPLIFIER, 24 - 31.5 GHz Typical Supply Current vs. Vdd Drain Bias Voltage (Vd) +7V RF Input Power (RFIN) Channel Temperature Vdd (V) Idd (mA) +20 dBm +5.0 1200 150 °C +5.5 1200 +6.0 1200 Continuous Pdiss (T= 85 °C) (derate 135 mW/°C above 85 °C) 8.8 W Thermal Resistance (channel to package bottom) 7.4 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C ESD Sensitivity (HBM) Class 0, 150V Note: Amplifier will operate over full voltage ranges shown above Vgg adjusted to achieve Idd = 1200 mA ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: ALUMINA 2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES GOLD OVER 50 MICROINCHES MINIMUM NICKEL. 3. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 5. PACKAGE WARP SHALL NOT EXCEED 0.05 mm DATUM -C- 3 9 Amplifiers - Linear & Power - Chip Amplifiers - Linear & Power - SMT Absolute Maximum Ratings 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. CLASSIFIED AS MOISTURE SENSITIVITY LEVEL (MSL) 1. Package Information Part Number Package Body Material Lead Finish HMC943LP5E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL Rating MSL1 [2] Package Marking [1] H943 XXXX [1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 260 °C For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 3-6 9 HMC943LP5E v01.0511 GaAs pHEMT MMIC 1.5 WATT POWER AMPLIFIER, 24 - 31.5 GHz Pin Descriptions Amplifiers - Linear & Power - Chip Amplifiers - Linear & Power - SMT 3 9 3-7 9 Pin Number Function Description 1, 3, 5, 8, 9, 16, 17, 20, 22, 24, 25, 32 GND These pins and package bottom must be connected to RF/DC ground. 2, 6, 7, 14, 18, 19, 23, 27 N/C These pins are not connected internally;however, all data shown herein was measured with these pins connected to RF/DC ground externally. 4 RFIN RF signal input. This pad is AC coupled and matched to 50 Ohms over the operating frequency range. 10, 31 VG1, VG2 Gate control for amplifier. External bypass capacitors of 100 pF, 0.01 µF, and 4.7 µF are required on each. 11 - 13, 15, 26, 28 - 30 VD2, VD4, VD6, VD8, VD7, VD5, VD3, VD1 Drain bias for the amplifier. External bypass capacitors of 100 pF, 0.01 µF, and 4.7 µF are required on each. 21 RFOUT RF signal output. This pad is AC coupled and matched to 50 ohms over the operating frequency range. Interface Schematic Application Circuit For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC943LP5E v01.0511 GaAs pHEMT MMIC 1.5 WATT POWER AMPLIFIER, 24 - 31.5 GHz Evaluation PCB List of Materials for Evaluation PCB 130027 [1] Item Description J1, J2 SRI, K Connectors J3, J4 DC Pins C1 - C10 100 pF Capacitors, 0402 Pkg. C11 - C20 10000 pF Capacitors, 0402 Pkg. C21 - C30 4.7 µF Capacitors, Case A Pkg. U1 HMC943LP5E Power Amplifier PCB [2] 130025 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 or Arlon FR4 The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] Amplifiers - Linear & Power - Chip Amplifiers - Linear & Power - SMT 3 9 3-8 9