HMC965LP5E v02.0711 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12.5 - 15.5 GHz Amplifiers - Linear & Power - Chip Amplifiers - Linear & Power - SMT 3 9 Typical Applications Features The HMC965LP5E is ideal for: Saturated Output Power: +34 dBm @ 20% PAE • Point-to-Point Radios High Output IP3: +40 dBm • Point-to-Multi-Point Radios High Gain: 27 dB • VSAT & SATCOM DC Supply: +6V @ 1200 mA • Military & Space No External Matching Required Functional Diagram General Description The HMC965LP5E is a 4 stage GaAs pHEMT MMIC 2 Watt Power Amplifier with an integrated temperature compensated on-chip power detector which operates between 12.5 and 15.5 GHz. The HMC965LP5E provides 27 dB of gain, +34 dBm of saturated output power, and 20% PAE from a +6V supply. The HMC965LP5E exhibits excellent linearity and is optimized for high capacity digital microwave radio. It is also ideal for 13.75 to 14.5 GHz Ku Band VSAT transmitters as well as SATCOM applications. The HMC965LP5E amplifier I/Os are internally matched to 50 Ohms and is packaged in a leadless QFN 5x5 mm surface mount package and requires no external matching components. Electrical Specifications TA = +25° C, Vdd = Vdd1 = Vdd2 = Vdd3 = Vdd4 = Vdd5 = +6V, Idd = 1200 mA [1] Parameter Min. Frequency Range Gain [3] 24 Gain Variation Over Temperature Typ. Max. Units 12.5 - 15.5 GHz 27 dB 0.05 dB/ °C Input Return Loss 12 dB Output Return Loss 12 dB 32 dBm Saturated Output Power (Psat) 34 dBm Output Third Order Intercept (IP3)[2] 40 dBm 1200 mA Output Power for 1 dB Compression (P1dB) Total Supply Current (Idd) 30 [1] Adjust Vgg between -2 to 0V to achieve Idd = 1200mA typical. [2] Measurement taken at +6V @ 1200 mA, Pout / Tone = +22 dBm [3] Board loss subtracted out 3-1 9 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC965LP5E v02.0711 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12.5 - 15.5 GHz Broadband Gain & Return Loss vs. Frequency [1] Gain vs. Temperature [1] 30 38 S21 S11 S22 0 26 -10 22 -30 18 10 11 12 13 14 15 FREQUENCY (GHz) 16 17 18 12 13 14 15 16 FREQUENCY (GHz) Input Return Loss vs. Temperature Output Return Loss vs. Temperature 0 0 -5 RETURN LOSS (dB) +25C +85C -40C -4 -8 -12 -16 -10 -15 +25C +85C -40C -20 -25 -30 -20 12 13 14 15 12 16 13 P1dB vs. Temperature 36 36 34 34 P1dB (dBm) 38 32 16 15 16 5V 6V 32 30 +25C +85C -40C 28 15 P1dB vs. Supply Voltage 38 30 14 FREQUENCY (GHz) FREQUENCY (GHz) P1dB (dBm) 3 9 30 Amplifiers - Linear & Power - Chip Amplifiers - Linear & Power - SMT 10 -20 RETURN LOSS (dB) +25C +85C -40C 34 GAIN (dB) RESPONSE (dB) 20 28 26 26 12 13 14 FREQUENCY (GHz) 15 16 12 13 14 FREQUENCY (GHz) [1] Board loss subtracted out For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 3-2 9 HMC965LP5E v02.0711 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12.5 - 15.5 GHz Psat vs. Supply Voltage 38 36 36 Psat (dBm) 38 34 32 +25C +85C -40C 30 32 5V 6V 28 12 13 14 15 16 12 13 FREQUENCY (GHz) 15 16 15 16 Psat vs. Supply Current (Idd) 38 38 36 36 34 34 Psat (dBm) P1dB (dBm) P1dB vs. Supply Current (Idd) 32 30 32 1100 mA 1200 mA 1300 mA 30 1100 mA 1200 mA 1300 mA 28 14 FREQUENCY (GHz) 28 26 26 12 13 14 15 16 12 13 FREQUENCY (GHz) 14 FREQUENCY (GHz) Output IP3 vs. Temperature, Pout/Tone = +22 dBm Output IP3 vs. Supply Current, Pout/Tone = +22 dBm 48 48 46 46 +25C +85C -40C 44 1100 mA 1200 mA 1300 mA 44 42 IP3 (dBm) 42 40 38 40 38 36 36 34 34 32 32 30 30 12 13 14 FREQUENCY (GHz) 3-3 9 34 30 28 IP3 (dBm) Amplifiers - Linear & Power - Chip Amplifiers - Linear & Power - SMT 3 9 Psat (dBm) Psat vs. Temperature 15 16 12 13 14 15 16 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC965LP5E v02.0711 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12.5 - 15.5 GHz Output IP3 vs. Supply Voltage, Pout/Tone = +22 dBm 46 70 IM3 (dBc) 42 13 GHz 14 GHz 15 GHz 60 5V 6V 40 38 36 40 30 34 20 32 10 30 0 12 13 14 15 16 10 12 14 16 FREQUENCY (GHz) 70 35 Pout (dBm), GAIN (dB), PAE (%) 40 IM3 (dBc) 60 50 40 13 GHz 14 GHz 15 GHz 20 10 0 10 12 14 16 20 22 24 Power Compression @ 14 GHz 80 30 18 Pout/TONE (dBm) Output IM3 @ Vdd = +6V 18 20 22 Pout Gain PAE 30 25 20 15 10 5 0 -10 24 -8 -6 Pout/TONE (dBm) -4 -2 0 2 4 6 8 10 INPUT POWER (dBm) Reverse isolation vs. Temperature Detector Voltage Over Temperature 0 10 -10 12.5 GHz +25C 12.5 GHz +85C 12.5 GHz -55C 15.5 GHz +25C 15.5 GHz +85C 15.5 GHz -55C 1 +25C +85C -40C -20 ISOLATION (dB) Vref-Vdet (V) 3 9 50 0.1 -30 Amplifiers - Linear & Power - Chip Amplifiers - Linear & Power - SMT 80 44 IP3 (dBm) Output IM3 @ Vdd = +5V 48 -40 -50 -60 -70 -80 0.01 -5 3 11 19 OUTPUT POWER (dBm) 27 35 -90 11 12 13 14 15 16 17 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 3-4 9 HMC965LP5E v02.0711 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12.5 - 15.5 GHz Gain & Power vs. Supply Current @ 14 GHz Gain & Power vs. Supply Voltage @ 14 GHz 3-5 9 Gain (dB), P1dB (dBm), Psat (dBm) 50 35 30 25 GAIN P1dB Psat 20 15 1100 45 Gain P1dB Psat 40 35 30 25 20 1150 1200 1250 1300 5 Idd (mA) 5.5 6 Vdd (V) Power Dissipation 10 9 POWER DISSIPATION (W) Amplifiers - Linear & Power - Chip Amplifiers - Linear & Power - SMT 3 9 Gain (dB), P1dB (dBm), Psat (dBm) 40 8 7 6 5 Max Pdis @ 85C 12 GHz 13 GHz 14 GHz 15 GHz 16 GHz 4 3 2 1 0 -10 -8 -6 -4 -2 0 2 4 6 8 INPUT POWER (dBm) Absolute Maximum Ratings Drain Bias Voltage (Vdd) +8V RF Input Power (RFIN) Channel Temperature Typical Supply Current vs. Vdd Vdd (V) Idd (mA) +24 dBm +5.0 1200 150 °C +6.0 1200 Continuous Pdiss (T= 85 °C) (derate 137 mW/°C above 85 °C) 8.9 W Thermal Resistance (channel to ground paddle) 7.3 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C ESD Sensitivity (HBM) Class 1A Note: Amplifier will operate over full voltage ranges shown above. Vgg adjusted to achieve Idd = 1200 mA. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC965LP5E v02.0711 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12.5 - 15.5 GHz Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material Lead Finish HMC965LP5E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL Rating MSL1 [2] Package Marking [1] H965 XXXX [1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 260 °C Pin Descriptions Pin Number Function Description 1 - 3, 6, 7, 10 - 12, 16, 22 - 24, 27, 32 N/C These pins are not connected internally, however all data shown herein was measured with these pins connected to RF/DC ground externally. 4 RFIN This pad is DC coupled and matched to 50 Ohms. 5, 8, 14, 17, 20, 25, 31 GND These pins and package bottom must be connected to RF/DC ground. 9 Vgg1 Gate control for amplifier. External bypass capacitors of 100 pF, 10 nF and 4.7 uF are required. Interface Schematic For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] Amplifiers - Linear & Power - Chip Amplifiers - Linear & Power - SMT 3 9 3-6 9 HMC965LP5E v02.0711 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12.5 - 15.5 GHz Pin Descriptions (continued) Amplifiers - Linear & Power - Chip Amplifiers - Linear & Power - SMT 3 9 3-7 9 Pin Number Function Description 13, 15, 26, 28 - 30 Vdd5, Vdd4, Vdd4, Vdd3, Vdd2, Vdd1 Drain bias voltage for the amplifier. External bypass capacitors of 100pF, 10nF and 4.7µF capacitors are required. Pins 15 and 26 are connected internally Vdd4 may be applied to either pin 15 or pin 26 18 Vref DC voltage of diode biased through external resistor, used for temperature compensation of Vdet. 19 Vdet DC voltage representing RF output power rectified by diode which is biased through an external resistor. 21 RFOUT This pin is DC coupled and matched to 50 Ohms. Interface Schematic Application Circuit For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC965LP5E v02.0711 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12.5 - 15.5 GHz Evaluation PCB List of Materials for Evaluation PCB EVAL01-HMC965LP5E Item Description J1, J2, J5, J6 K Connector, SRI J3, J4 DC Pin C1, C5 - C11 100 pF Capacitor, 0402 Pkg. C12, C16 - C27 10 nF Capacitor, 0402 Pkg. C23, C27 - C33 4.7 µF Capacitor, Case A. U1 HMC965LP5E Power Amplifier PCB [2] 600-00048-00 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 or Arlon FR4 [1] The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] Amplifiers - Linear & Power - Chip Amplifiers - Linear & Power - SMT 3 9 3-8 9