HMC971 v01.0711 PIN MMIC HIGH ISOLATION SPDT SWITCH, 18 - 40 GHz Typical Applications Features The HMC971 is ideal for: High Isolation: 40 dB • Telecom Infrastructure Low Insertion Loss: 1.6 dB • Microwave Radio & VSAT High Linearity: +43 dBm Input IP3 • Military Radios, Radar & ECM High Power Handling: +34 dBm Input P1dB • Space Systems Die Size: 2.21 x 1.26 x 0.1 mm • Test Instrumentation General Description Functional Diagram The HMC971 is a broadband high isolation PIN SPDT MMIC chip. Covering 18 to 40 GHz, the switch features >55 dB isolation at lower frequencies and >45 dB at higher frequencies. The switch operates using complementary negative control voltage logic lines of 0/-10V. All data is measured with the chip in a 50 Ohm test fixture connected via 0.025 mm (1 mil) diameter wire bonds of minimal length 0.31 mm (12 mils). Switches - Chip 7 Electrical Specifications, TA = +25 °C, With 0/-10V Control, 50 Ohm System Parameter Typ. Max. Units Insertion Loss RFC to RF1 18 - 28 GHz 28 - 32 GHz 32 - 40 GHz Frequency 1.0 1.3 1.5 1.3 1.7 1.9 dB dB dB Insertion Loss RFC to RF2 18 - 28 GHz 28 - 32 GHz 32 - 40 GHz 1.0 1.3 1.5 1.3 1.7 1.9 dB dB dB Isolation 40 dB 17 12 dB dB Input Power for 1 dB Compression 34 dBm Input Third Order Intercept (Two-Tone Input Power= +7 dBm Each Tone, 1 MHz Tone Separation) 43 dBm Return Loss 7-1 Min. 34 “On State” 18 - 30 GHz 30 - 40 GHz For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC971 v01.0711 PIN MMIC HIGH ISOLATION SPDT SWITCH, 18 - 40 GHz Insertion Loss, RFC to RF1 Isolation Loss, RFC to RF2 0 +25C +85C -55C -0.6 INSERTION LOSS (dB) -1.2 -1.8 -2.4 -1.8 -2.4 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 FREQUENCY (GHz) FREQUENCY (GHz) Isolation 7 Return Loss 0 0 -10 -5 RETURN LOSS (dB) RFC/RF1 RFC/RF2 RF1/RF2 RF1 on RF1/RF2 RF2 on -20 ISOLATION (dB) -1.2 -3 -3 -30 -40 -50 -60 -70 -10 -15 -20 -25 -30 RFC RF1 RF2 -35 -80 -40 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 FREQUENCY (GHz) FREQUENCY (GHz) Insertion Loss vs. Pin, RFC to RF1, F = 25 GHz Insertion Loss vs. Pin, RFC to RF2, F = 25 GHz 0 0 -0.5 -0.5 INSERTION LOSS (dB) INSERTION LOSS (dB) +25C +85C -55C -0.6 -1 -1.5 -2 -2.5 Switches - Chip INSERTION LOSS (dB) 0 -1 -1.5 -2 -2.5 -3 -3 20 22 24 26 28 INPUT POWER (dBm) 30 32 34 20 22 24 26 28 30 32 34 INPUT POWER (dBm) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-2 HMC971 v01.0711 PIN MMIC HIGH ISOLATION SPDT SWITCH, 18 - 40 GHz Absolute Maximum Ratings IP3 RFC to RF1 and RFC to RF2 70 RFC/RF1 RFC/RF2 IP3 (dBm) 60 50 RF Input Power 35 dBm Negative Control Voltage -15 V Positive Bias Current 80 mA Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 40 30 20 22 24 26 28 30 32 34 36 38 40 FREQUENCY (GHz) Switches - Chip 7 7-3 Control Voltages State RFC - RF1 RFC - RF2 CNTL1 CNTL2 1 IL Isol -10V +30mA / 1.29V 2 Isol IL +30mA / 1.29V -10V [Note 1] Diodes are reversed biased for the insertion path. [Note 2] Diodes are forward biased for the isolation path. The forward voltage across the diodes is 1.29V. Equivalent Schematic For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC971 v01.0711 PIN MMIC HIGH ISOLATION SPDT SWITCH, 18 - 40 GHz Outline Drawing Die Packaging Information [1] Standard Alternate GP-2 (Gel Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND PAD IS .004” SQUARE 4. BACKSIDE METALIZATION: GOLD 5. BACKSIDE METAL IS GROUND 6. BOND PAD METALIZATION: GOLD 7. NO CONNECTION REQUIRED FOR UNLABLED BOND PADS. 8. OVERALL DIE SIZE ±.002” For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] Switches - Chip 7 7-4 HMC971 v01.0711 PIN MMIC HIGH ISOLATION SPDT SWITCH, 18 - 40 GHz Pad Descriptions Switches - Chip 7 7-5 Pad Number Function Description 1 RF1 RF signal contains DC control voltage.. External DC blocking capacitor is required. 2 RFC RF common port, this port is AC coupled. 3 RF2 RF signal contains DC control voltage. External DC blocking capacitor is required. 4 CNTL1 Switch control input, see “Control Voltages” table. 5 CNTL2 Switch control input, see “Control Voltage” table. Interface Schematic Assembly Diagram For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC971 v01.0711 PIN MMIC HIGH ISOLATION SPDT SWITCH, 18 - 40 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should be brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3 mils). Handling Precautions 0.127mm (0.005”) Thick Alumina Thin Film Substrate Follow these precautions to avoid permanent damage. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Figure 1. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) Static Sensitivity: Follow ESD precautions to protect against ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. RF Ground Plane 0.150mm (0.005”) Thick Moly Tab Mounting 0.254mm (0.010”) Thick Alumina Thin Film Substrate The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Figure 2. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire (DC bias, IF1 and IF2) or Ribbon Bond (RF and LO ports) 0.076 mm x 0.013 mm (3 mil x 0.5 mil) size is recommended. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils). For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7 Switches - Chip Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. 7-6