HMC995LP5GE v00.0611 Amplifiers - Linear & Power - SMT GaAs pHEMT MMIC 3 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12 - 16 GHz Typical Applications Features The HMC995LP5GE is ideal for: Intergrated Power Detector • Point-to-Point Radios Saturated Output Power: 35.5 dBm @ 24% PAE • Point-to-Multi-Point Radios High Output IP3: 41 dBm • VSAT & SATCOM High Gain: 27 dB • Military & Space DC Supply: +5V to +7V @ 1200 mA No External Matching Required Functional Diagram General Description The HMC995LP5GE is a 4 stage GaAs pHEMT MMIC 2 Watt Power Amplifier with an integrated temperature compensated on-chip power detector which operates between 12 and 16 GHz. The HMC995LP5GE provides 27 dB of gain, 35.5 dBm of saturated output power, and 24% PAE from a +7V supply. The HMC995LP5GE exhibits excellent linearity and is optimized for high capacity digital microwave radio. It is also ideal for 13.75 to 14.5 GHz Ku Band VSAT transmitters as well as SATCOM applications. The HMC995LP5GE amplifier I/Os are internally matched to 50 Ohms and is packaged in a leadless QFN 5x5 mm surface mount package and requires no external matching components. Electrical Specifications TA = +25° C, Vdd = Vdd1 = Vdd2 = Vdd3 = Vdd4 = Vdd5 = +7V, Idd = 1200 mA [1] Parameter Min. Frequency Range Gain [3] 24 Gain Variation Over Temperature Typ. Max. Units 12 - 16 GHz 27 dB 0.03 dB/ °C Input Return Loss 9 dB Output Return Loss 15 dB 34.5 dBm 35.5 dBm 41 dBm 1200 mA Output Power for 1 dB Compression (P1dB) 32 Saturated Output Power (Psat) Output Third Order Intercept (IP3)[2] Total Supply Current (Idd) [1] Adjust (Vgg1=Vgg2=Vgg3) between -2 to 0V to achieve Idd = 1200mA typical. [2] Measurement taken at +7V @ 1200mA, Pout / Tone = +22 dBm [3] Board loss subtracted out 1 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC995LP5GE v00.0611 GaAs pHEMT MMIC 3 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12 - 16 GHz Broadband Gain & Return Loss vs. Frequency Gain vs. Temperature [1] 15 S21 S11 S22 5 30 26 -5 22 -15 18 -25 10 11 12 13 14 15 FREQUENCY (GHz) 16 17 18 12 13 15 16 Output Return Loss vs. Temperature 0 0 +25C +85C -40C -5 RETURN LOSS (dB) -5 -10 -15 -20 -10 -15 +25C +85C -40C -20 -25 -25 -30 12 13 14 15 16 12 13 FREQUENCY (GHz) 14 15 16 15 16 FREQUENCY (GHz) P1dB vs. Temperature P1dB vs. Supply Voltage 40 40 +25C +85C -40C 38 5V 6V 7V 38 36 P1dB (dBm) P1dB (dBm) 14 FREQUENCY (GHz) Input Return Loss vs. Temperature RETURN LOSS (dB) +25C +85C -40C 34 GAIN (dB) RESPONSE (dB) 25 Amplifiers - Linear & Power - SMT 38 35 34 36 34 32 32 30 30 28 28 12 13 14 FREQUENCY (GHz) 15 16 12 13 14 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 2 HMC995LP5GE v00.0611 GaAs pHEMT MMIC 3 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12 - 16 GHz 40 38 38 36 36 Psat (dBm) Psat (dBm) Psat vs. Supply Voltage 40 34 32 34 30 28 28 12 13 14 15 16 12 13 FREQUENCY (GHz) P1dB vs. Supply Current (Idd) 15 16 15 16 Psat vs. Supply Current (Idd) 40 40 38 38 1000 mA 1100 mA 1200 mA 36 Psat(dBm) 36 34 34 32 32 30 30 28 1000 mA 1100 mA 1200 mA 28 12 13 14 15 16 12 13 FREQUENCY (GHz) Output IP3 vs. Supply Current, Pout/Tone = +22 dBm 48 48 46 46 44 44 42 42 40 38 +25C +85C -40C 36 14 FREQUENCY (GHz) IP3 (dBm) IP3 (dBm) 14 FREQUENCY (GHz) Output IP3 vs. Temperature, Pout/Tone = +22 dBm 1000 mA 1100 mA 1200 mA 40 38 36 34 34 32 32 30 30 12 13 14 FREQUENCY (GHz) 3 5V 6V 7V 32 +25C +85C -40C 30 P1dB (dBm) Amplifiers - Linear & Power - SMT Psat vs. Temperature 15 16 12 13 14 15 16 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC995LP5GE v00.0611 GaAs pHEMT MMIC 3 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12 - 16 GHz Output IM3 @ Vdd = +5V 48 80 46 70 44 60 IM3 (dBc) 42 IP3 (dBm) 12 GHz 13 GHz 14 GHz 15 GHz 16 GHz 40 5V 6V 7V 38 36 50 40 30 20 34 10 32 30 0 12 13 14 15 16 10 12 14 16 FREQUENCY (GHz) 80 70 70 60 60 50 50 40 12 GHz 13 GHz 14 GHz 15 GHz 16 GHz 20 10 22 24 20 22 24 40 30 12 GHz 13 GHz 14 GHz 15 GHz 16 GHz 20 10 0 0 10 12 14 16 18 20 22 24 10 12 14 16 Pout/TONE (dBm) Power Compression @ 15 GHz 40 40 30 Pout (dBm), GAIN (dB), PAE (%) Pout Gain PAE 35 25 20 15 10 5 0 -10 18 Pout/TONE (dBm) Power Compression @ 13 GHz Pout (dBm), GAIN (dB), PAE (%) 20 Output IM3 @ Vdd = +7V 80 IM3 (dBc) IM3 (dBc) Output IM3 @ Vdd = +6V 30 18 Pout/TONE (dBm) Amplifiers - Linear & Power - SMT Output IP3 vs. Supply Voltage, Pout/Tone = +22 dBm -8 -6 -4 -2 0 2 4 6 INPUT POWER (dBm) 8 10 12 14 35 Pout Gain PAE 30 25 20 15 10 5 0 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 INPUT POWER (dBm) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 4 HMC995LP5GE v00.0611 GaAs pHEMT MMIC 3 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12 - 16 GHz Detector Voltage vs. Frequency & Temperature Reverse isolation vs. Temperature 0 12.5 GHz +25C 12.5 GHz +85C 12.5 GHz -40C 15.5 GHz +25C 15.5 GHz +85C 15.5 GHz -40C 1 +25C +85C -40C -20 ISOLATION (dB) Vref-Vdet (V) -10 0.1 -30 -40 -50 -60 -70 -80 0.01 -5 3 11 19 27 -90 35 11 OUTPUT POWER (dBm) 13 14 15 16 17 Gain & Power vs. Supply Voltage @ 14 GHz 40 Gain (dB), P1dB (dBm), Psat (dBm) 50 35 30 25 GAIN P1dB Psat 20 15 1000 12 FREQUENCY (GHz) Gain & Power vs. Supply Current @ 14 GHz Gain (dB), P1dB (dBm), Psat (dBm) Amplifiers - Linear & Power - SMT 10 45 GAIN P1dB Psat 40 35 30 25 20 1050 1100 1150 1200 5 Idd (mA) 5.5 6 6.5 7 Vdd (V) Power Dissipation POWER DISSIPATION (W) 12 10 8 6 13 GHz 14 GHz 15 GHz 4 2 0 -10 -8 -6 -4 -2 0 2 4 6 8 10 INPUT POWER (dBm) 5 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC995LP5GE v00.0611 GaAs pHEMT MMIC 3 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12 - 16 GHz Drain Bias Voltage (Vdd1-5) +8V RF Input Power (RFIN) Channel Temperature Typical Supply Current vs. Vdd Vdd (V) Idd (mA) +24 dBm 5 1200 150 °C 6 1200 7 1200 Continuous Pdiss (T= 85 °C) (derate 137 mW/°C above 85 °C) 8.9 W Thermal Resistance (channel to gnd paddle) 7.3 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ESD Sensitivity (HBM) Class 1A Note: Amplifier will operate over full voltage ranges shown above Vgg adjusted to achieve Idd = 1200 mA ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] Amplifiers - Linear & Power - SMT Absolute Maximum Ratings 6 HMC995LP5GE v00.0611 GaAs pHEMT MMIC 3 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12 - 16 GHz Amplifiers - Linear & Power - SMT Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: ALUMINA 2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES GOLD OVER 50 MICROINCHES MINIMUM NICKEL. 3. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM -C6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number Package Body Material Lead Finish HMC995LP5GE RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL Rating MSL3 [2] Package Marking [1] H995 XXXX [1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 260 °C 7 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC995LP5GE v00.0611 GaAs pHEMT MMIC 3 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12 - 16 GHz Pin Descriptions Function Description 1-3, 9, 14 17-19, 23, 24 N/C These pins are not connected internally, however all data shown herein was measured with these pins connected to RF/DC ground externally. 4 RFIN This pad is DC coupled and matched to 50 Ohms. 5, 15 GND These pins and package bottom must be connected to RF/DC ground. 6-8 Vgg1, Vgg2 Vgg3 Gate control for amplifier. External bypass capacitors of 100pF, 10nF and 4.7uF are required. Please follow “MMIC Amplifier Biasing Proceedure” App Note. 10, 11 20-22 Vdd1, Vdd2, Vdd3, Vdd4, Vdd5 Drain bias voltage for the amplifier. External bypass capacitors of 100pF, 10nF and 4.7µF capacitors are required. 12 Vref DC voltage of diode biased through external resistor, used for temperature compensation of Vdet. See Application Circuit. 13 Vdet DC voltage representing RF output power rectified by diode which is biased through an external resistor. See Appilation Circuit. 16 RFOUT This pin is DC coupled and matched to 50 Ohms. Interface Schematic For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] Amplifiers - Linear & Power - SMT Pin Number 8 HMC995LP5GE v00.0611 GaAs pHEMT MMIC 3 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12 - 16 GHz Amplifiers - Linear & Power - SMT Application Circuit 9 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC995LP5GE v00.0611 GaAs pHEMT MMIC 3 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12 - 16 GHz Amplifiers - Linear & Power - SMT Evaluation PCB List of Materials for Evaluation PCB EVAL01-HMC995LP5GE Item Description J1, J2, J5, J6 K Connector SRI J3, J4 DC Pin C2, C3, C9, C12, C14, C16, C17, C19 100 pF Capacitor, 0402 Pkg. C1, C4, C10, C11, C13, C15, C18, C20 10 nF Capacitor, 0402 Pkg. C21, C22, C25 - C30 4.7uF Capacitor, Case A. U1 HMC995LP5GE Power Amplifier PCB 600-00163-00 Evaluation PCB [1] The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 or Arlon FR4 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 10